Volume 611, Issue 1

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December 1999

Symposium C — Gate Stack & Silicide Issues in Silicon Processing

Issue Editors:

P. R. Besser,
S. A. Campbell,
L. Clevenger,
B. Herner,
J. Kittl

32 articles in this issue

Remote Plasma Nitridation of In-Situ Steam Generated (ISSG) Oxide
H. N. Al-Shareef
A. Karamcheti
G. Miner
OriginalPaper 14 March 2011 Article: 7151
Thin Ni-Silicides for Low Resistance Contacts and Growth of Thin Crystalline Si Layers
Elena A. Guliants
Wayne A. Anderson
OriginalPaper 14 March 2011 Article: 7141
Silicidation of Titanium-Rich Titanium Boride Deposited by Co-Sputtering on Si (100)
G. Sade
J. Pelleg
OriginalPaper 14 March 2011 Article: 7111
Effect of a thin Ta layer on the C49-C54 transition
F. La Via
F. Mammoliti
F. Meinardi
OriginalPaper 14 March 2011 Article: 7101
In-situ Growth and Growth Kinetics of Epitaxial (100) CoSi₂ Layer on (100) Si by Reactive Chemical Vapor Deposition
Hwa Sung Rhee
Heui Seung Lee
Byung Tae Ahn
OriginalPaper 14 March 2011 Article: 1031
Epitaxial CoSi₂ formation by a Cr or Mo interlayer
C. Detavernier
R. L. Van Meirhaeghe
W. Vandervorst
OriginalPaper 14 March 2011 Article: 1021
Modeling of Self-Aligned Silicidation in 2D and 3D: Growth Suppression by Oxygen Diffusion
Victor Moroz
Takako Okada
OriginalPaper 14 March 2011 Article: 931
Study of CoSix Spike Leakage for 0.1-um CMOS
Ken-ichi Goto
OriginalPaper 14 March 2011 Article: 911
Silicide engineering: influence of alloying elements on CoSi₂ nucleation
C. Detavernier
R. L. Van Meirhaeghe
F. Cardon
OriginalPaper 14 March 2011 Article: 841
Investigation on C54 nucleation and growth by micro-Raman imaging
Stefania Privitera
Francesco Meinardi
Emanuele Rimini
OriginalPaper 14 March 2011 Article: 831
On the Template Mechanism of Enhanced C54-TiSi₂ Formation
L. Kappius
R. T. Tung
OriginalPaper 14 March 2011 Article: 821
Controlling CoSi₂ nucleation: the effect of entropy of mixing
C. Detavernier
R. L. Van Meirhaeghe
F. Cardon
OriginalPaper 14 March 2011 Article: 791
Hot Wall Isothermal RTP for Gate Oxide Growth and Nitridation
Allan Laser
Christopher Ratliff
Larry Page
OriginalPaper 14 March 2011 Article: 771
Effects of Nitridation by N₂O or No on the Electrical Properties of Thin Gate or Tunnel Oxides
C. Gerardi
T. Rossetti
I. Crupi
OriginalPaper 14 March 2011 Article: 731
A Low-Cost BiCMOS Process with Metal Gates
H. W. van Zeijl
L. K. Nanver
OriginalPaper 14 March 2011 Article: 721
The Physical and Electrical Properties of Polycrystalline Si_1−xGe_x as a Gate Electrode Material for ULSI CMOS Structures
Sung-Kwan Kang
Dae-Hong Ko
Hoo-Jeong Lee
OriginalPaper 14 March 2011 Article: 711
Formation and Electrical Transport Properties of Nickel Silicide Synthesized by Metal Vapor Vacuum Arc Ion Implantation
X. W. Zhang
S. P. Wong
F. Zhang
OriginalPaper 14 March 2011 Article: 651
In situ and Ex situ Measurements of Stress Evolution in the Cobalt-Silicon System
G. Lucadamo
C. Lavoie
J. M. E. Harper
OriginalPaper 14 March 2011 Article: 631
A Two-Step Spacer Etch for High-Aspect-Ratio Gate Stack Process
Chien Yu
Rich Wise
Anthony Domenicucci
OriginalPaper 14 March 2011 Article: 541
Development of a Post-Spacer Etch Clean to Improve Silicide Formation
Edward K. Yeh
Samit S. Sengupta
Calvin T. Gabriel
OriginalPaper 14 March 2011 Article: 531
Integration Challenges for Advanced Salicide Processes and their Impact on CMOS Device Performance
K. Wieczorek
M. Horstmann
A. Frenkel
OriginalPaper 14 March 2011 Article: 511
Low Temperature Nitridatio of SiO₂ Films using a Catalytic-CVD System
Akira Izumi
Hidekazu Sato
Hideki Matsumura
OriginalPaper 14 March 2011 Article: 451
Low-Oxygen Nitride Layers Produced by UHV Ammonia Nitridation of Silicon
Mark A. Shriver
T. K. Higman
Jeffrey Roberts
OriginalPaper 14 March 2011 Article: 441
A Closer “Look” at Modern Gate Oxides
Frieder H. Baumann
C.-P. Chang
David A. Muller
OriginalPaper 14 March 2011 Article: 411
Structural and Chemical Characterization of Tungsten Gate Stack for 1 Gb Dram
O. Gluschenkov
J. Benedict
K. Wong
OriginalPaper 14 March 2011 Article: 331
Molybdenum as a Gate Electrode for Deep Sub-Micron CMOS Technology
Pushkar Ranade
Yee-Chia Yeo
Chenming Hu
OriginalPaper 14 March 2011 Article: 321
Zr Oxide Based Gate Dielectrics with Equivalent SiO₂ Thickness of Less than 1.0 nm and Device Integration with Pt Gate Electrode
Yanjun Ma
Yoshi Ono
OriginalPaper 14 March 2011 Article: 291
Amorphous Mixed TiO₂ and SiO₂ Films on Si(100) by Chemical Vapor Deposition
Ryan C. Smith
Charles J. Taylor
Wayne L. Gladfelter
OriginalPaper 14 March 2011 Article: 281
Ultra-thin Gate Oxide Prepared by Nitridation in ND₃ for MOS Device Applications
Hyungshin Kwon
Hyunsang Hwang
OriginalPaper 14 March 2011 Article: 241
Electrical Characteristics of TaO_xN_y for High-k MOS Gate Dielectric Applications
Kiju Im
Hyungsuk Jung
Hyunsang Hwang
OriginalPaper 14 March 2011 Article: 181
Physical and Electrical Properties of Yttrium Silicate Thin Films
James J. Chambers
Gregory N. Parsons
OriginalPaper 14 March 2011 Article: 161
The Structure of Plasma-Deposited and Annealed Pseudo-Binary ZrO₂-SiO₂ Alloys
G. Rayner Jr.
R. Therrien
G. Lucovsky
OriginalPaper 14 March 2011 Article: 131

Volume 611, Issue 1

Remote Plasma Nitridation of In-Situ Steam Generated (ISSG) Oxide

Thin Ni-Silicides for Low Resistance Contacts and Growth of Thin Crystalline Si Layers

Silicidation of Titanium-Rich Titanium Boride Deposited by Co-Sputtering on Si (100)

Effect of a thin Ta layer on the C49-C54 transition

In-situ Growth and Growth Kinetics of Epitaxial (100) CoSi₂ Layer on (100) Si by Reactive Chemical Vapor Deposition

Epitaxial CoSi₂ formation by a Cr or Mo interlayer

Modeling of Self-Aligned Silicidation in 2D and 3D: Growth Suppression by Oxygen Diffusion

Study of CoSix Spike Leakage for 0.1-um CMOS

Silicide engineering: influence of alloying elements on CoSi₂ nucleation

Investigation on C54 nucleation and growth by micro-Raman imaging

On the Template Mechanism of Enhanced C54-TiSi₂ Formation

Controlling CoSi₂ nucleation: the effect of entropy of mixing

Hot Wall Isothermal RTP for Gate Oxide Growth and Nitridation

Effects of Nitridation by N₂O or No on the Electrical Properties of Thin Gate or Tunnel Oxides

A Low-Cost BiCMOS Process with Metal Gates

The Physical and Electrical Properties of Polycrystalline Si_1−xGe_x as a Gate Electrode Material for ULSI CMOS Structures

Formation and Electrical Transport Properties of Nickel Silicide Synthesized by Metal Vapor Vacuum Arc Ion Implantation

In situ and Ex situ Measurements of Stress Evolution in the Cobalt-Silicon System

A Two-Step Spacer Etch for High-Aspect-Ratio Gate Stack Process

Development of a Post-Spacer Etch Clean to Improve Silicide Formation

Integration Challenges for Advanced Salicide Processes and their Impact on CMOS Device Performance

Low Temperature Nitridatio of SiO₂ Films using a Catalytic-CVD System

Low-Oxygen Nitride Layers Produced by UHV Ammonia Nitridation of Silicon

A Closer “Look” at Modern Gate Oxides

Structural and Chemical Characterization of Tungsten Gate Stack for 1 Gb Dram

Molybdenum as a Gate Electrode for Deep Sub-Micron CMOS Technology

Zr Oxide Based Gate Dielectrics with Equivalent SiO₂ Thickness of Less than 1.0 nm and Device Integration with Pt Gate Electrode

Amorphous Mixed TiO₂ and SiO₂ Films on Si(100) by Chemical Vapor Deposition

Ultra-thin Gate Oxide Prepared by Nitridation in ND₃ for MOS Device Applications

Electrical Characteristics of TaO_xN_y for High-k MOS Gate Dielectric Applications

Physical and Electrical Properties of Yttrium Silicate Thin Films

The Structure of Plasma-Deposited and Annealed Pseudo-Binary ZrO₂-SiO₂ Alloys

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