Volume 609, Issue 1 | MRS Online Proceedings Library

Search all MRS Online Proceedings Library articles

Volume 609, Issue 1

December 1999

Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000

Issue Editors:

H. M. Branz,
R. W. Collins,
S. Guha,
H. Okamoto,
M. Stutzmann

157 articles in this issue

Electroreflectance Study of Light-Emitting Porous Silicon
Toshihiko Toyama
Akihito Shimode
Hiroaki Okamoto
OriginalPaper 01 July 2000 Article: 2410
The Emergence of an Amorphous-Silicon Based Photonic Technology; Optical Memories to 3-D Photonic Crystals
N. Hata
C. M. Fortmann
OriginalPaper 01 July 2000 Article: 1211
Phase Transition in Cr/a-Si:H/V Thin Film Devices
J. Hu
A. J. Snell
W. Edmiston
OriginalPaper 01 July 2000 Article: 1210
Thermal Oxidation of Si Nanoparticles Grown by Plasma-Enhanced CVD
Debabrata Das
Jordi Farjas
Enric Bertran
OriginalPaper 01 July 2000 Article: 511
Flying Spot Technique in Microcrystalline Silicon Solar Cells
R. Schwarz
P. Sanguino
M. Vieira
OriginalPaper 01 July 2000 Article: 324
Temperature Dependent Transport in Microcrystalline PIN Diodes
T. Brammer
H. Stiebig
H. Wagner
OriginalPaper 01 July 2000 Article: 323
Barrier-Controlled Transport in Doped Microcrystalline Si
S. Brehme
P. Kanschat
W. Fuhs
OriginalPaper 01 July 2000 Article: 322
Deposition of Heterogeneous Silicon Thin Films-Structure and Electric States-
Isamu Shimizu
OriginalPaper 01 July 2000 Article: 321
Effect Of Nickel In Large Grain Poly-Si Film Formed By Nickel Induced Lateral Crystallization and New Grain Enhancement Method
W. Y. Chan
A. M. Myasnikov
P. K. Ko
OriginalPaper 01 July 2000 Article: 316
Laser Processing of Amorphous Silicon for Polysilicon Devices, Circuits and Flat-Panel Imagers
J. B. Boyce
R. T. Fulks
Y. Wang
OriginalPaper 01 July 2000 Article: 314
Low Temperature Poly-Si Layers Deposited by Hot Wire CVD Yielding a Mobility of 4.0 cm²V⁻¹s⁻¹ in Top Gate Thin Film Transistors
R. E. I. Schropp
J. K. Rath
S. Wagner
OriginalPaper 01 July 2000 Article: 313
Thin Film Transistors with Electron Mobility of 40 cm²V⁻¹s⁻¹ Made from Directly Deposited Intrinsic Microcrystalline Silicon
I-Chun Cheng
Sigurd Wagner
Marcelo Mulato
OriginalPaper 01 July 2000 Article: 312
A Junction Field Effect Transistor Based on Hydrogenated Amorphous Silicon
D. Caputo
G. de Cesare
F. Palma
OriginalPaper 01 July 2000 Article: 311
Modeling the Optical Quantum Efficiency of Thin Film Amorphous Silicon Solar Cells
Sally-anne F. Rowlands
John Livingstone
Christopher P. Lund
OriginalPaper 01 July 2000 Article: 307
Light Trapping by Periodically Structured TCO in the Submicrometer Range
Christopher Eisele
Christoph E. Nebel
Martin Stutzmann
OriginalPaper 01 July 2000 Article: 306
Suppression of Plasma Damage on SnO₂ by Means of a Different Surface Chemistry Using Dichlorosilane
T. Nakashima
M. Kondo
A. Matsuda
OriginalPaper 01 July 2000 Article: 305
Comparison Study of a-SiGe Solar Cells and Materials Deposited Using Different Hydrogen Dilution
H. Povolny
P. Agarwal
X. Deng
OriginalPaper 01 July 2000 Article: 303
Recombination in Tritiated Amorphous Silicon
Tome Kosteski
Franco Gaspari
Walter T. Shmayda
OriginalPaper 01 July 2000 Article: 301
Influence of Mechanical Stress on the Electrical Performance of Polycrystalline-Silicon Resistors
M. Nakabayashi
H. Ohyama
H. Takizawa
OriginalPaper 01 July 2000 Article: 293
Capacitance Voltage Characteristics of Polysilicon–Polysilicon Oxide–Polysilicon Structures for Three-Dimensional Memory
John R. Lindsey
T. S. Kalkur
OriginalPaper 01 July 2000 Article: 292
Memory effects in MOS capacitors with silicon rich oxide insulators
S. Lombardo
I. Crupi
S. Privitera
OriginalPaper 01 July 2000 Article: 291
Roughness of TFT Gate Metallization and its Impact on Leakage, Threshold Voltage Shift and Mobility
A. Nathan
B. Park
R. V. R. Murthy
OriginalPaper 01 July 2000 Article: 286
Thin Film Transistors Made of Polysilicon Crystallized at 950°C on Steel Substrate
Ming Wu
Sigurd Wagner
OriginalPaper 01 July 2000 Article: 285
A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions
Peyman Servati
Arokia Nathan
Andrei Sazonov
OriginalPaper 01 July 2000 Article: 283
Hydrogenated Amorphous Silicon and Silicon Nitride Deposited at less than 100° C by ECR-PECVD for Thin Film Transistors
Andrew J. Flewitt
Andrew P. Dyson
William I. Milne
OriginalPaper 01 July 2000 Article: 282
Simulation and Design of Amorphous Silicon Thin-Film Transistors for Driving Color Detectors
D. Caputo
L. Colalongo
F. Palma
OriginalPaper 01 July 2000 Article: 281
A Laplace Transform Technique for Direct Determination of Density of Electronic States in Disordered Semiconductors from Transient Photocurrent Data
Mariana J. Gueorguieva
Charles Main
Steve Reynolds
OriginalPaper 01 July 2000 Article: 278
On the Role of Charged Defect States and Deep Traps in the Photocarrier Drift and Diffusion in a-Si:H
Paul Stradins
Akihisa Matsuda
OriginalPaper 01 July 2000 Article: 277
Improved High Resolution Post-Transit Spectroscopy for Determining the Density of States in Amorphous Semiconductors
Charlie Main
Steve Reynolds
Joe M. Marshall
OriginalPaper 01 July 2000 Article: 276
Light Intensity Exponents as Sensitive Tools for the Detection of Impurities in a-Si:H
L. F. Fonseca
S. Z. Weisz
I. Balberg
OriginalPaper 01 July 2000 Article: 275
Modeling of Beta Conductivity in Tritiated Amorphous Silicon
Stefan Costea
Franco Gaspari
Walter T. Shmayda
OriginalPaper 01 July 2000 Article: 274
Defect and Tail States in Microcrystalline Silicon investigated by pulsed ESR
P. Kanschat
H. Mell
W. Fuhs
OriginalPaper 01 July 2000 Article: 273
Influence of the Grain Boundary Band Offset on Charge Transport Mechanism in Microcrystalline Silicon Analysed by Numerical Simulation
Alessandro Fantoni
Manuela Vieira
Reinhard Schwarz
OriginalPaper 01 July 2000 Article: 272
Transport Properties of Polycrystalline Silicon with Various Textures and Microstructures
Toshio Kamiya
Kouichi Nakahata
Isamu Shimizu
OriginalPaper 01 July 2000 Article: 271
Isotope Exchange in Hydrogenated Silicon-Oxynitride (SiON) for 1.55μm Optical Waveguide Applications
Jinju Lee
Kangguo Cheng
Huub W. M. Salemink
OriginalPaper 01 July 2000 Article: 268
Diffusion of Hydrogen and Deuterium in Stack Systems of Si_xN_yH_z/Si_xN_yD_z and Crystalline Si
Christoph Boehme
Gerald Lucovsky
OriginalPaper 01 July 2000 Article: 267
Fast In-diffusion of Hydrogen at the Initial Stage of Hydrogen Plasma Treatment on a-Si:H Films Observed by In-situ ESR Measurements
Ujjwal Kr. Das
Tetsuji Yasuda
Satoshi Yamasaki
OriginalPaper 01 July 2000 Article: 265
A Study of Non-Infrared-Active Hydrogen Bonding in a-Si:H Thin Film using combined Calibrated Temperature Desorption Spectroscopy and FTIR
D. J. Santjojo
J. C. L. Cornish
M. O. G. Talukder
OriginalPaper 01 July 2000 Article: 263
T-Site-Trapped Molecular Hydrogen in a-Si:H
R. E. Norberg
D. J. Leopold
N. Tomic
OriginalPaper 01 July 2000 Article: 262
Poly-Si Thin Film Transistors Fabricated By Employing Selective Si Ion-Implantation And Excimer Laser Annealing
Min-Cheol Lee
Jae-Hong Jeon
Min-Koo Han
OriginalPaper 01 July 2000 Article: 254
Excimer Laser Recrystallization of a-Si Employing Aluminum Masking Window
Jae-Hong Jeon
Min-Cheol Lee
Min-Koo Han
OriginalPaper 01 July 2000 Article: 253
AFM and HREM Observation of the Pulse Laser Interference Crystallized a—Si:H/a-SiN_x:H Multilayers
Li Wang
Xinfan Huang
J. B. Xu
OriginalPaper 01 July 2000 Article: 251
Ftir Spectroscopy and Spectroscopic Ellipsometry Study of Nanocrystalline Layers Formed by High-Dose Hydrogen and Deuterium Implantation of Silicon
L. N. Safronov
E. V. Spesivtsev
V. T. Gromov
OriginalPaper 01 July 2000 Article: 249
Multi-Band Electron Paramagnetic Resonance Study of Microcrystalline and Cluster Silicon Embedded in SiO₂
Takashi Ehara
Tadaaki Ikoma
Shozo Tero-Kubota
OriginalPaper 01 July 2000 Article: 247
Thermal Stabilization and Crystallization of Nanometric Particles of Si-C-N Prod]ced by RF-Plasma Enhanced Chemical-Vapor-Deposition
Gregorio Viera
Enric Bertran
Pere Roura
OriginalPaper 01 July 2000 Article: 245
TEM and HREM study of silicon and platinum nanoscale ensembles in 3D dielectric opal matrix
N. A. Feoktistov
V. G. Golubev
L. M. Sorokin
OriginalPaper 01 July 2000 Article: 244
Spectroscopic Ellipsometry for the Characterization of the Morphology of Ultra-thin Thermal CVD Amorphous and Nanocrystalline Silicon Thin Films
Sukti Hazra
Mitsuyuki Yamanaka
Eiichi Suzuki
OriginalPaper 01 July 2000 Article: 243
Effects of thermal annealing in the properties of PECVD a-SiC layers
L. F. Marsal
J. Pallares
R. Alcubilla
OriginalPaper 01 July 2000 Article: 237
Microstructure Characterization of Amorphous Silicon Based Alloys by Inert Gas Effusion Studies
Wolfhard Beyer
Camargo Sergio S Jr.
Rosari Saleh
OriginalPaper 01 July 2000 Article: 234
Device Quality Silicon Carbon Thin Films
Christian Gemmer
Markus B. Schubert
OriginalPaper 01 July 2000 Article: 233

1
2
…
4
Next page