Volume 595, Issue 1 | MRS Online Proceedings Library

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Volume 595, Issue 1

December 1999

Symposium W — GaN and Related Alloys - 1999

Issue Editors:

H. Amano,
R. Feenstra,
T. Myers,
M. S. Shur

149 articles in this issue

Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
Z. Q. Fang
D. C. Look
H. Morkoç
OriginalPaper 03 September 2012 Article: 1184
Photocurrent spectroscopy investigations of Mg-related defects levels in p-type GaN
S. J. Chung
O. H. Cha
H. J. Lee
OriginalPaper 03 September 2012 Article: 1183
Fermi Level Pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy
H. Witte
A. Krtschil
F. Scholz
OriginalPaper 03 September 2012 Article: 1182
Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
Alexander Y. Polyakov
Nikolai B. Smirnov
Vladimir F. Pavlov
OriginalPaper 03 September 2012 Article: 1181
Deep Levels in n-Type Schottky and p⁺-n Homojunction GaN Diodes
A. Hierro
D. Kwon
J. S. Speck
OriginalPaper 03 September 2012 Article: 1180
Metal/GaN contacts studied by electron spectroscopies
J. Dumont
R. Caudano
P. Gibart
OriginalPaper 03 September 2012 Article: 1179
A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
Bo Liu
Mikko H. Ahonen
Paul H. Holloway
OriginalPaper 03 September 2012 Article: 1178
Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
Mi-Ran Park
Wayne A. Anderson
Seong-Ju Park
OriginalPaper 03 September 2012 Article: 1177
Highly Chemical Reactive Ion Etching of Gallium Nitride
F. Karouta
B. Jacobs
P. R. Hageman
OriginalPaper 03 September 2012 Article: 1176
The microstructure and electrical properties of directly deposited TiN ohmic contacts to Gallium Nitride
P. Ruterana
G. Nouet
F. Huet
OriginalPaper 03 September 2012 Article: 1175
Fabrication and Characterization of InGaN Nano-scale Dots for Blue and Green LED Applications
K. S. Kim
C. H. Hong
J. M. Seo
OriginalPaper 03 September 2012 Article: 1174
A Damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN
J. M. Hwang
J. T. Hsieh
W. H. Hung
OriginalPaper 03 September 2012 Article: 1173
Oxidation of Gallium Nitride Epilayers in Dry Oxygen
P. Chen
R. Zhang
Y. D. Zheng
OriginalPaper 03 September 2012 Article: 1171
Wet Etching of Ion-implanted GaN Crystals by AZ-400K Photoresist
C. A. Carosella
B. Molnar
J. A. Sprague
OriginalPaper 03 September 2012 Article: 1170
Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
Qiang Zhao
Michael Lukitsch
Pao-Kuang Kuo
OriginalPaper 03 September 2012 Article: 1169
Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structures
G. Dang
X. A. Cao
R. G. Wilson
OriginalPaper 03 September 2012 Article: 1168
Processing and Device Performance of GaN Power Rectifiers
A. P. Zhang
G. T. Dang
S. J. Pearton
OriginalPaper 03 September 2012 Article: 1167
High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl₂/Ar Discharges
A. P. Zhang
G. Dang
J. M. Van Hove
OriginalPaper 03 September 2012 Article: 1166
Comparison of the Optical Properties of Er³⁺ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
U. Hömmerich
J. T. Seo
J. M. Zavada
OriginalPaper 03 September 2012 Article: 1165
Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN∶Er
M. E. Overberg
C. R. Abernathy
J. M. Zavada
OriginalPaper 03 September 2012 Article: 1162
Time-Resolved Spectroscopy of InGaN
Milan Pophristic
Frederick H. Long
Ian T. Ferguson
OriginalPaper 03 September 2012 Article: 1158
Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
Yong-Hoon Cho
G. H. Gainer
W. Jhe
OriginalPaper 03 September 2012 Article: 1157
The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/Sapphire Templates
Alexander P. Young
Leonard J. Brillson
Charles W. Tu
OriginalPaper 03 September 2012 Article: 1156
Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
M. Wraback
H. Shen
R. D. Dupuis
OriginalPaper 03 September 2012 Article: 1155
Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
J. Wagner
A. Ramakrishnan
B. Johs
OriginalPaper 03 September 2012 Article: 1154
Radiative Recombination between Two Dimensional Electron Gas and Photoexcited Holes in Modulation-doped Al_xGa_1−xN/GaN Heterostructures
B. Shena
O. Moriwaki
Y. Arakawa
OriginalPaper 03 September 2012 Article: 1153
Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
Ivan M. Tiginyanu
Igor V. Kravetsky
Hans L. Hartnagel
OriginalPaper 03 September 2012 Article: 1152
A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy
Abigail Bell
Ian Harrison
M. Kuball
OriginalPaper 03 September 2012 Article: 1151
Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire
Giancarlo Salviati
Nicola Armani
Andrea Gasparotto
OriginalPaper 03 September 2012 Article: 1150
Prism coupling as a non destructive tool for optical characterization of (Al, Ga) nitride compounds
E. Dogheche
B. Belgacem
F. Omnes
OriginalPaper 03 September 2012 Article: 1149
Carrier Dynamics Studies of Thick GaN Grown by HVPE
G. E. Bunea
M. S. Ünlü
B. B. Goldberg
OriginalPaper 03 September 2012 Article: 1147
The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
M. Kuball
J. M. Hayes
C. Jagadish
OriginalPaper 03 September 2012 Article: 1146
Photoluminescence characterization of Mg implanted GaN
C. Ronning
H. Hofsäss
R. F. Davis
OriginalPaper 03 September 2012 Article: 1144
Electronic Raman Scattering from Mg-Doped Wurtzite GaN
K. T. Tsen
C. Koch
H. X. Jiang
OriginalPaper 03 September 2012 Article: 1142
Optical Spectroscopy of Ingan Epilayers in the Low Indium Composition Regime
M. H. Crawford
J. Han
J. J. Figiel
OriginalPaper 03 September 2012 Article: 1141
Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
M. Schubert
A. Kasic
F. Scholz
OriginalPaper 03 September 2012 Article: 1139
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
A. Vantomme
M. F. Wu
H. Bender
OriginalPaper 03 September 2012 Article: 1138
Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen Source
F. Semendy
L. K. Li
W. I. Wang
OriginalPaper 03 September 2012 Article: 1137
Optical Properties of AlGaN Quantum Well Structures
Hideki Hirayama
Yasushi Enomoto
Yoshinobu Aoyagi
OriginalPaper 03 September 2012 Article: 1135
Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy
A. Kaschner
J. Holst
H. Riechert
OriginalPaper 03 September 2012 Article: 1134
Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
A. Kinoshita
H. Hirayama
Y. Aoyagi
OriginalPaper 03 September 2012 Article: 1132
The Formation of In-Rich Regions at the Perphery of the Inverted Hexahonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
P. Li
S. J. Chua
S. Sakai
OriginalPaper 03 September 2012 Article: 1131
Sign of the piezoelectric field in asymmetric GaInN/AlGaN/GaN single and double quantum wells on SiC
Jin Seo Im
A. Hangleiter
F. Scholz
OriginalPaper 03 September 2012 Article: 1128
Optical Spectroscopy and Composition of InGaN
K. P. O’Donnell
R. W. Martin
J. F. W. Mosselmans
OriginalPaper 03 September 2012 Article: 1126
Dependence of aging on inhomogeneities in InGaN/AlGaN/GaN light-emitting diodes
V. E. Kudryashov
S. S. Mamakin
F. I. Manyakhin
OriginalPaper 03 September 2012 Article: 1125
Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures
S. Bidnyk
J. B. Lam
H. S. Kong
OriginalPaper 03 September 2012 Article: 1122
Electron Beam Pumping in Nitride Vertical Cavities with GaN/ Al_0.25 Ga_0.75 N Bragg Reflectors
H. Klausing
J. Aderhold
S. Panzer
OriginalPaper 03 September 2012 Article: 1121
Temperature Distribution in InGaN-MQW LEDs under Operation
Veit Schwegler
Matthias Seyboth
Rolf Sauer
OriginalPaper 03 September 2012 Article: 1118
High-Gain, High-Speed ZnO MSM Ultraviolet Photodetectors
H. Shen
M. Wraback
Y. Lu
OriginalPaper 03 September 2012 Article: 1116
New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
J. D. Albrecht
P. P. Ruden
M. G. Ancona
OriginalPaper 03 September 2012 Article: 1115