Volume 572, Issue 1

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December 1999

Symposium Y — Wide-Bandgap Semiconductors for High-Power, High Frequency

Issue Editors:

S. Binari,
A. Burk,
M. Melloch,
C. Nguyen

86 articles in this issue

Photoionization Spectra of Traps Responsible for Current Collapse in GaN MESFETs
P. B. Klein
J. A. Freitas Jr
S. C. Binari
OriginalPaper 10 February 2011 Article: 547
Correlation of Drain Current Pulsed Response with Microwave Power Output in AlGaN/GaN HEMTs
S. C. Binari
K. Ikossi-Anastasiou
A. E. Wickenden
OriginalPaper 10 February 2011 Article: 541
Photo-Assisted RIE of GaN in BCl₃/Cl₂/N₂
N. Medelci
A. Tempez
A. Bensaoula
OriginalPaper 10 February 2011 Article: 535
IIIB- Nitride Semiconductors for High Temperature Electronic Applications
X. Bai
D. M. Hill
M. E. Kordesch
OriginalPaper 10 February 2011 Article: 529
High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal
W. C. Lai
M. Yokoyama
S. M. Sze
OriginalPaper 10 February 2011 Article: 523
Transmutation Doping of III-Nitrides
Galina Popovici
OriginalPaper 10 February 2011 Article: 519
Activation Characteristics of Donor and Acceptor Implants in GaN
X. A. Cao
S. J. Pearton
J. M. Zavada
OriginalPaper 10 February 2011 Article: 513
Piezoelectric Scattering in Large-Bandgap Semiconductors and Low-Dimensional Heterostructures
B. K. Ridley
N. A. Zakhleniuk
D. R. Anderson
OriginalPaper 10 February 2011 Article: 507
The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures
B. E. Foutz
M. J. Murphy
L. F. Eastman
OriginalPaper 10 February 2011 Article: 501
Hydrostatic and uniaxial stress dependence and photo induced effects on the channel conductance of n-AlGaN/GaN heterostructures grown on sapphire substrates
A. K. Fung
C. Cai
M. Murphy
OriginalPaper 10 February 2011 Article: 495
Current-Voltage Characteristics of Ungated AlGaN/GaN Heterostructures
J. D. Albrecht
P. P. Rudento
A. E. Wickenden
OriginalPaper 10 February 2011 Article: 489
Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process
Won Sang Lee
Yoon Ho Choi
Dong Chan Moon
OriginalPaper 10 February 2011 Article: 481
AlGaN Microwave Power HFETs on Insulating SiC Substrates
Gerry Sullivan
Ed Gertner
Brian McDermott
OriginalPaper 10 February 2011 Article: 471
Comparative Study of GaN Growth Process by MOVPE
Jingxi Sun
J. M. Redwing
T. F. Kuech
OriginalPaper 10 February 2011 Article: 463
Carrier Recombination Dynamics of Al_xGa_1−xN Epilayers Grown by MOCVD
Yong-Hoon Cho
G. H. Gainer
S. A. McPherson
OriginalPaper 10 February 2011 Article: 457
High-Quality GaN Grown by Molecular Beam Epitaxy on Ge(001)
H. Siegle
Y. Kim
E. R. Weber
OriginalPaper 10 February 2011 Article: 451
Electron Transport in the III–V Nitride Alloys
B. E. Foutz
S. K. Otleary
L. F. Eastman
OriginalPaper 10 February 2011 Article: 445
Study of Near-Threshold Gain Mechanisms in MOCVD-Grown GaN Epilayers and InGaN/GaN Heterostructures
S. Bidnyk
T. J. Schmidt
J. J. Song
OriginalPaper 10 February 2011 Article: 439
Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides
T. J. Schmidt
J. J. Song
Wei Yang
OriginalPaper 10 February 2011 Article: 433
Disorder Induced IR Anomaly in Hexagonal AlGaN Short-Period Superlattices and Alloys
A. M. Mintairov
A. S. Vlasov
M. B. Smirnov
OriginalPaper 10 February 2011 Article: 427
Photoluminescence between 3.36 eV and 3.41 eV from GaN Epitaxial Layers
R. Seitz
C. Gaspar
B. Beaumont
OriginalPaper 10 February 2011 Article: 419
SIMS and CL Characterization of Manganese-Doped Aluminum Nitride Films
R. C. Tucceri
C. D. Bland
H. H. Richardson
OriginalPaper 10 February 2011 Article: 413
Epitaxial Growth of AlN on Si Substrates with Intermediate 3C-SiC as Buffer Layers
S. Q. Hong
H. M. Liaw
S. R. Wilson
OriginalPaper 10 February 2011 Article: 407
Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System
Philippe Mérel
Mohamed Chaker
Malek Tabbal
OriginalPaper 10 February 2011 Article: 401
Fast and Slow UV-Photoresponse in n-Type GaN
R. Rocha
S. Koynov
B. K. Meyer
OriginalPaper 10 February 2011 Article: 395
Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride
C. M. Lueng
H. L. W. Chan
C. L. Choy
OriginalPaper 10 February 2011 Article: 389
Growth and Characterization of InGaN/GaN Heterostructures Using Plasma-Assisted Molecular Beam Epitaxy
K. H. Shim
S. E. Hong
K. I. Cho
OriginalPaper 10 February 2011 Article: 383
Ca Dopant Site Within Ion Implanted GaN Lattice
H. Kobayashi
W. M. Gibson
OriginalPaper 10 February 2011 Article: 377
Deformation-Induced Dislocations in 4H-SiC and GaN
M. H. Hong
A. V. Samant
P. Pirouz
OriginalPaper 10 February 2011 Article: 369
TEM Study of Mg-Doped Bulk GaN Crystals
Z. Liliental-Weber
M. Benamara
S. Porowski
OriginalPaper 10 February 2011 Article: 363
Atomic Scale Analysis of InGaN Multi-Quantum Wells
M. Benamara
Z. Liliental-Weber
M. A. Khan
OriginalPaper 10 February 2011 Article: 357
Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures
B. D. Little
S. Bidnyk
W. Yang
OriginalPaper 10 February 2011 Article: 351
Temperature Dependent Morphology Transition of GaN Films
A. R. A. Zauner
F. K. De Theije
P. K. Larsen
OriginalPaper 10 February 2011 Article: 345
Investigation of the Morphology of AlN Films Grown on Sapphire by MOCVD Using Transmission Electron Microscopy
W. L. Samey
L. Salamanca-Ribal
K. A. Jones
OriginalPaper 10 February 2011 Article: 339
Conducting (Si-Doped) Aluminum Nitride Epitaxial Films Grown by Molecular Beam Epitaxy
J. G. Kim
Madhu Moorthy
R. M. Park
OriginalPaper 10 February 2011 Article: 333
Synchrotron X-ray Topography Studies of Epitaxial Lateral Overgrowth of GaN on Sapphire
Patrick J. Mcnally
T. Tuomi
A. N. Danilewsky
OriginalPaper 10 February 2011 Article: 327
Reproducibility and Uniformity of MOVPE Planetary Reactors® for the Growth of GaN Based Materials
M. Heuken
H. Protzmann
E. Woelk
OriginalPaper 10 February 2011 Article: 321
Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire
P. Fini
H. Marchand
U. K. Mishra
OriginalPaper 10 February 2011 Article: 315
Pendeo-Epitaxial Growth of GaN on SiC and Silicon Substrates via Metalorganic Chemical Vapor Deposition
K. J. Linthicum
T. Gehrke
R. F. Davis
OriginalPaper 10 February 2011 Article: 307
Enhanced Optical Emission from GaN Film Grown on Composite Intermediate Layers
Xiong Zhang
Soo-Jin Chua
Kok-Boon Chong
OriginalPaper 10 February 2011 Article: 301
Effect of N/Ga Flux Ratio in GaN Buffer Layer Growth by MBE on (0001) Sapphire on Defect Formation in the GaN Main Layer
S. Ruvimov
Z. Liliental-Weber
E. R. Weber
OriginalPaper 10 February 2011 Article: 295
The influence of the sapphire substrate on the temperature dependence of the GaN bandgap
Joachim Krüiger
Noad Shapiro
Richard J. Molnar
OriginalPaper 10 February 2011 Article: 289
Mid Infrared Photoconductivity Spectra of Donor Impurities in Hexagonal Silicon Carbide
R. J. Linville
G. J. Brown
R. Perrin
OriginalPaper 10 February 2011 Article: 281
Experimental and Theoretical Analysis of the Hall-Mobility in N-Type Bulk 6H- and 4H-SiC
S. T. G. Müller
D. Hofmann
A. Winnacker
OriginalPaper 10 February 2011 Article: 275
Growth and Characterization of 2″ 6H-Silicon Carbide
Erwin Schmitt
Robert Eckstein
Amd-Dietrich Weber
OriginalPaper 10 February 2011 Article: 271
Polytype Stability and Defect Reduction in 4H-SiC Crystals Grown via Sublimation Technique
R. Yakimova
T. Iakimov
E. Janzén
OriginalPaper 10 February 2011 Article: 265
Online Monitoring of PVT SiC Bulk Crystal Growth Using Digital X-Ray Imaging
P. J. Wellmann
M. Bickermann
A. Winnacker
OriginalPaper 10 February 2011 Article: 259
Characterization of Vanadium-Doped 4H-SiC Using Optical Admittance Spectroscopy
S. R. Smith
A. O. Evwaraye
J. Goldstein
OriginalPaper 10 February 2011 Article: 253
Impurity Effects in the Growth of 4H-SiC Crystals by Physical Vapor Transport
V. Balakrishna
G. Augustine
R. H. Hopkins
OriginalPaper 10 February 2011 Article: 245
The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples
A. O. Evwaraye
S. R. Smith
W. C. Mitchel
OriginalPaper 10 February 2011 Article: 237

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