Volume 564, Issue 1

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December 1999

Symposium N — Advanced Interconnects and Contacts

Issue Editors:

D. C. Edelstein,
T. Kikkawa,
M. C. Öztürk

79 articles in this issue

Stress Enhanced Arsenic Diffusion in Titanium Salicided Junctions by Implantation Into C49 TiSi₂ and Rapid Thermal Annealing
Dong Kyun Sohn
Ji-Soo Park
Jin Won Park
OriginalPaper 01 October 1999 Pages: 3 - 8
The Influence of Stress on The Growth of Titanium Silicide Thin Films on (001) Silicon Substrates
S. L. Cheng
S. M. Chang
S. S. Guo
OriginalPaper 01 October 1999 Pages: 9 - 14
Influence of the as and BF₂ Junction Implantation on Stress Induced Defects During Ti- and Co/Ti-Silicidation
A. Steegen
H. Bender
K. Maex
OriginalPaper 01 October 1999 Pages: 15 - 22
Effects of Ion Metal Plasma (IMP) Titanium Deposition on Ti Silicide Formation
A. Sabbadini
F. Cazzaniga
G. Queirolo
OriginalPaper 01 October 1999 Pages: 23 - 28
Prevention of Corner Voiding in Selective CVD Deposition of Titanium Silicide on SOI Device
Jer-shen Maa
Bruce Ulrich
Sheng Teng Hsu
OriginalPaper 01 October 1999 Pages: 29 - 34
The Future of Silicide for CMOS Contacts
R. A. Roy
C. Cabral Jr
C. Lavoie
OriginalPaper 01 October 1999 Pages: 35 - 45
Facilitated C54-TiSi₂ Formation With Elevated Deposition Temperature: A Study of CO-Deposited Layers
S. Ohmi
R. T. Tung
OriginalPaper 01 October 1999 Pages: 47 - 52
The Formation of C54 TiSi₂ in The Presence of Implanted or Deposited Molybdenum
M. Roux
A. Mouroux
S. L. Zhang
OriginalPaper 01 October 1999 Pages: 53 - 58
Reduction of The Phase Transition Temperature of TiSi₂ on Si(111) Using a Ta Interlayer
Bokhee Jung
Young Do Kim
Hyeongtag Jeon
OriginalPaper 01 October 1999 Pages: 59 - 64
HRTEM Study of the Interfacial Reactions of High-Temperature Sputtered Ti Thin Films on Preamorphized (001)Si
S. M. Chang
H. Y. Yang
L. J. Chen
OriginalPaper 01 October 1999 Pages: 65 - 70
Arsenic-Only Preamorphization Process Extension for TiSi₂ Formation Down to 65-nm Gate Lengths
A. Losavio
P. Sallagoity
OriginalPaper 01 October 1999 Pages: 71 - 76
Comparative Study on Lateral Silicide Growth in Self-Aligned Ti and Co Silicidation: Interaction and Reactivity with SiO₂ and Si₃N₄
Ji-Soo Park
Dong Kyun Sohn
Jin Won Park
OriginalPaper 01 October 1999 Pages: 77 - 83
Effects on Selective CVD of Titanium Disilicide by Substrate Doping and Selective Silicon Deposition
Jer-shen Maa
David J. Howard
OriginalPaper 01 October 1999 Pages: 85 - 89
Line-Width Dependence of Void Formation in Ti-Salicided BF₂-Doped Polysilicon Lines
H. N. Chua
K. L. Pey
C. S. Ho
OriginalPaper 01 October 1999 Pages: 91 - 99
Dimer Reconstruction at Metal-Silicide/Silicon Interfaces: A First-Principles Study
B. D. Yu
Y. Miyamoto
T. Ohno
OriginalPaper 01 October 1999 Pages: 103 - 108
Thermal Studies on Stress-Induced Void-Like Defects in Epitaxial-CoSi₂ Formation
C. S. Ho
K. L. Pey
R. P. G. Karunasiri
OriginalPaper 01 October 1999 Pages: 109 - 116
Oxide Mediated Epitaxial Growth of CoSi₂ in a Single Deposition Step
S. Ohmi
R. T. Tung
OriginalPaper 01 October 1999 Pages: 117 - 122
Silicide Contacts for Sub-0.25 μm Devices
L. J. Chen
S. L. Cheng
L. W. Cheng
OriginalPaper 01 October 1999 Pages: 123 - 134
In-Situ Study of the Oxide Mediated Epitaxy of CoSi₂ on Si
M. W. Kleinschmit
M. Yeadon
J. M. Gibson
OriginalPaper 01 October 1999 Pages: 135 - 138
The Influence of Ti Capping Layers on CoSi₂ Formation in the Presence of Interfacial Oxide
C. Detavernier
R. A. Donaton
F. Cardon
OriginalPaper 01 October 1999 Pages: 139 - 144
Epitaxial Growth and Thermal Stability of CoSi₂ Layer on (100) Si from Co-C Films without Capping Layer
Hwa Sung Rhee
Dong Kyun Sohn
Byung Tae Ahn
OriginalPaper 01 October 1999 Pages: 145 - 150
Influence of SiGe Thickness on the Co/SiGe/Si Solid State Reaction
R. A. Donaton
S. Jin
G. Langouche
OriginalPaper 01 October 1999 Pages: 151 - 156
Formation and Characterization of Spe Grown Ultra-Thin Cobalt Disilicide Film
Xin-Ping Qu
Guo-Ping Ru
F. Cardon
OriginalPaper 01 October 1999 Pages: 157 - 162
Formation and Stability of NI(PT) Silicide on (100)SI and (111)SI
D. Mangelinck
J. Y. Dai
T. Osipowicz
OriginalPaper 01 October 1999 Pages: 163 - 168
Modelling the Influence of the Silicon Doping Profile on a Silicide Well Ohmic Contact
G. K. Reeves
A. S. Holland
P. W. Leech
OriginalPaper 01 October 1999 Pages: 171 - 176
New Contact Etch Process for Embedded DRAM Applications
Chan-Lon Yang
Tong-Yu Chen
Water Lur
OriginalPaper 01 October 1999 Pages: 177 - 182
Transamination in Pulsed DC-Plasma Enhanced CVD Of Ti(C,N) From TDMAT
J. P. A. M. Driessen
A. D. Kuypers
J. Schoonman
OriginalPaper 01 October 1999 Pages: 183 - 188
Formation Mechanism of Metal-Oxides on Plasma-Exposed Wsi/Poly Si Gate Stacks
Ziyuan Liu
Y. Kawashima
K. Shiotani
OriginalPaper 01 October 1999 Pages: 189 - 194
Copper-Based Ohmic Contacts For The SiGe/Si Heterojunction Bipolar Transistor (HBT) Structure
K. Das
S. A. Alterovitz
OriginalPaper 01 October 1999 Pages: 195 - 200
A Beem Study of PtSi Schottky Contacts on Ion-Milled Si
Guo-Ping Ru
C. Detavernier
Bing-Zong Li
OriginalPaper 01 October 1999 Pages: 201 - 206
Chemical Vapor Deposition of Ti-Si-N Films with Alternating Source Supply
Jae-Sik Min
Hyung-Sang Park
Sang-Won Kang
OriginalPaper 01 October 1999 Pages: 207 - 210
Sidewall-Fence-Free Pt Etching with an Ar/O₂ Mixed Gas Plasma
M. C. Chiang
F. M. Pan
H. K. Chiu
OriginalPaper 01 October 1999 Pages: 211 - 216
Growth Kinetics Of SiO₂ On (001)Si Catalyzed By Cu₃Si At Elevated Temperatures
H. Y. Huang
L. J. Chen
OriginalPaper 01 October 1999 Pages: 217 - 222
In Situ XPS Study of Interaction of Thin IVA, VA Metal Films with Native Oxide on Si Substrates
N. M. Sushkova
A. G. Akimov
OriginalPaper 01 October 1999 Pages: 223 - 228
Diffusion Barriers for Mobile Ions in 256M DRAMs
J. P. Gambino
C. C. Parks
A. G. Domenicucci
OriginalPaper 01 October 1999 Pages: 229 - 234
Nucleation and Growth of CVD Cu Films
R. Kröger
M. Eizenberg
L. Chen
OriginalPaper 01 October 1999 Pages: 237 - 241
CVD Cu Process Development and Integration for sub-0.18 µm Devices
Jiming Zhang
Dean Denning
Elizabeth Weitzman
OriginalPaper 01 October 1999 Pages: 243 - 249
Comparison of Copper CVD Using Cu(FOD)₂ and Cu(HFAC)₂ Reduction
J. S. Boey
G. L. Griffin
H. Fan
OriginalPaper 01 October 1999 Pages: 251 - 255
Agglomeration of Cu Electroplating Seed Layers on Ultra-Thin Ta, Ta_1-xN_x, Ta_l-xO_x, Contaminated Ta, and Composite Ta/Ta_1-xN_x Diffusion Barriers
J. W. Hartman
Helen Yeh
Imran Hashim
OriginalPaper 01 October 1999 Pages: 257 - 262
Effects of Seeding Layers on Electroless Copper Deposition
Kai Yu Liu
Man Siu Tse
Wang Ling Goh
OriginalPaper 01 October 1999 Pages: 263 - 268
Advanced CVD Barrier Technology for Copper Interconnect
A. Jain
O. Adetutu
E. Weitzman
OriginalPaper 01 October 1999 Pages: 269 - 280
Effect of Nitrogen Content on Interfacial Adhesion of the Ta/SiO₂ Interface
Michael Lane
Reiner Dauskardt
Imran Hashim
OriginalPaper 01 October 1999 Pages: 281 - 286
The Effect of Surface Oxides on Cu/Ta Interfacial Interactions
L. Chen
B. Ekstrom
J. Kelber
OriginalPaper 01 October 1999 Pages: 287 - 292
TEM Analyses of Cu-Ta And Cu-Tan Interfaces
J. Y. Phillip Wang
Hong Zhang
Fusen Chen
OriginalPaper 01 October 1999 Pages: 293 - 298
Diffusion Barriers for Copper Metallization: Predicting Phase Stability and Reactivity using Equilibrium Thermodynamics
C. E. Ramberg
E. Blanquet
R. Madar
OriginalPaper 01 October 1999 Pages: 299 - 306
Growth and Structure of Metallic Barrie Laye and Interconnect Films I: Exeriments
D. L. Windt
J. Dalla Torre
R. Hull
OriginalPaper 01 October 1999 Pages: 307 - 312
Numerical Simulations of Topographic Evolution for Sputter Deposition into Trenches and Vias
Peter L. O’Sullivan
Frieder H. Baumann
George H. Gilmer
OriginalPaper 01 October 1999 Pages: 313 - 319
Integration of PECVD Tungsten Nitride as a Barrier Layer for Copper Metallization
A. R. Ivanova
C. J. Galewski
A. E. Kaloyeros
OriginalPaper 01 October 1999 Pages: 321 - 326
Characterization of PECVD Wn_x for Copper Barrier Application
A. Vijayendran
M. Danek
OriginalPaper 01 October 1999 Pages: 327 - 334
Highly Conformal Diffusion Barriers of Amorphous Niobium Nitride
R. G. Gordon
X. Liu
Y. Shi
OriginalPaper 01 October 1999 Pages: 335 - 340

Volume 564, Issue 1

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