Volume 533, Issue 1

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December 1998

Symposium FF — Epitaxy & Applications of Si-Based Heterostructures

Issue Editors:

E. A. Fitzgerald,
P. M. Mooney,
D. C. Houghton

53 articles in this issue

SiGe RF - Electronic: Devices, Circuits, Competitors, Markets
U. König
OriginalPaper 10 February 2011 Pages: 3 - 17
Toward RF System-Level Integration: Process Integration Issues in Sige BICMOS
G. Freeman
K. Schonenberg
B. Meyerson
OriginalPaper 10 February 2011 Pages: 19 - 30
Carrier Transport and Velocity Overshoot in Strained Si on Sige Heterostructures
David K. Ferry
Gabriele Formicone
Dragica Vasileska
OriginalPaper 10 February 2011 Pages: 31 - 42
Characteristics of Surface-Channel Strained Si_1-yC_yn-MOSFETS
K. Rim
T. O. Mitchell
J. F. Gibbons
OriginalPaper 10 February 2011 Pages: 43 - 48
Characterizations of Zr/Si_1-x-yGe_xC_y After Rapid Thermal Annealing
V. Aubry-Fortuna
M. Barthula
O. Chaix-Pluchery
OriginalPaper 10 February 2011 Pages: 49 - 54
Analysis of Sige Fet Device Structures on Silicon-on-sapphire Substrates by X-Ray Diffraction
P. M. Mooney
J. O. Chu
K. L. Kavanagh
OriginalPaper 10 February 2011 Pages: 55 - 60
Raman Spectroscopy of Epitaxial Si/Si_1-xGe,_xHeterostructures
Ran Liu
Stefan Zollner
Nigel Cave
OriginalPaper 10 February 2011 Pages: 63 - 68
Investigation of Plastic Relaxation in Si_1-xGe_x/Si Deposited by Selective Epitaxy
S. Wickenhäuser
L. Vescan
OriginalPaper 10 February 2011 Pages: 69 - 75
Mosaic Crystal Tilts and Their Relationship to Dislocation Structure, Surface Roughness and Growth Conditions in Relaxed SiGe Layers
D. J. Wallis
D. J. Robbins
J. Newey
OriginalPaper 10 February 2011 Pages: 77 - 82
Device and Fabrication Issues of High Performance Si/Sige Fets
M. Arafa
I. Adesida
K. Ismail
OriginalPaper 10 February 2011 Pages: 83 - 92
Evidence of InterDiffusion Effect in Stacked Polycrystalline Sige/Si Layers For Cmos Gate Application
C. Hernandez
Y. Campidelli
D. Bensahel
OriginalPaper 10 February 2011 Pages: 93 - 98
Impact of the ge Content on the Radiation Hardness of Hetero-Junction Diodes in Sige Strained Layers
H. Ohyama
E. Simoen
M. Caymax
OriginalPaper 10 February 2011 Pages: 99 - 104
Epitaxially Grown N⁺ Phosphorus Collector Peaks in Highfrequency hbt’s with Implanted Emitters
C. C. G. Visser
L. K. Nanver
A. Van Den Bogaard
OriginalPaper 10 February 2011 Pages: 105 - 110
Wet and Dry Oxidation of Polycrystalline Si_xGe_1-x Films
P. E. Hellberg
S. L. Zhang
C. S. Petersson
OriginalPaper 10 February 2011 Pages: 111 - 116
Characterization of SiGeC Using Pt(SiGeC) Silicide Schottky Contacts
Jeff J. Peterson
Charles E. Hunt
Robin SCott
OriginalPaper 10 February 2011 Pages: 117 - 124
Ellipsometry Studies, Optical Properties, and Band Structure of Gel._1-yC_y, Ge-RICH Si_1-x-yGe_xC_y, and Boron-Doped Si_1-xGe_xAlloys
Kelly E. Junge
Ruidiger Lange
James Kolodzey
OriginalPaper 10 February 2011 Pages: 125 - 129
Light Emission From Erbium Doped Si_1-x XGe₁Heterostructures
J. H. Evans-Freeman
A. T. Naveed
A. C. Wright
OriginalPaper 10 February 2011 Pages: 133 - 138
Erbium Doped Si/Sige Waveguide Diodes: Optical and Electrical Characterization
E. Neufeld
A. Luigart
G. Abstreiter
OriginalPaper 10 February 2011 Pages: 139 - 144
Evidence for Heterojunction Effects in Polycrystalline Si_1-xGe_x Thin Film Transistors With Si Caps
Albert W. Wang
Krishna C. Saraswat
OriginalPaper 10 February 2011 Pages: 145 - 150
Photonic Crystals Based on Macroporous Silicon
V. Lehmann
U. Grüning
A. Birner
OriginalPaper 10 February 2011 Pages: 151 - 155
Effect of Interface-Related Deep Levels on high Sensitivity of Schottky Diode Photodetector Based on Ultrathin InGaAs Film on Si
A. V. Kvit
M. V. Yakimov
M. N. Naidenkov
OriginalPaper 10 February 2011 Pages: 157 - 162
Lateral Ordering of Self-Assembled Ge Islands
Jian-Hong Zhu
K. Brunner
G. Abstreiter
OriginalPaper 10 February 2011 Pages: 165 - 170
Stacked Layers of C-Induced Ge Quantum Dots
O. G. Schmidt
K. Eberl
P. Lamperter
OriginalPaper 10 February 2011 Pages: 171 - 176
Using Growth Kinetics for Nanoengineering of Si-Ge Surfaces
I. Goldfarb
G. A. D. Briggs
OriginalPaper 10 February 2011 Pages: 177 - 182
Ge-Quantum Dots on SI(001) Tailored by Carbon Predeposition
O. Leifeld
D. Grützmacher
K. Kern
OriginalPaper 10 February 2011 Pages: 183 - 188
Measurements of Confined Energy Levels and Coulomb Charging Effect in Self-Assembled Ge Quantum Dots by Admittance Spectroscopy
S. K. Zhang
Z. M. Jiang
F. Lu
OriginalPaper 10 February 2011 Pages: 191 - 196
Real-Time Observation of Ti Silicide Epitaxial Islands Growth with the Photoelectron Emission Microscopy
W. Yang
H. Ade
R. J. Nemanich
OriginalPaper 10 February 2011 Pages: 197 - 202
Magnetron Sputter Heteroepitaxy of Si_1-x.Ge_x/Si(001): the Evolution of the Cross-Hatched Surface
B. Vögeli
M. Kummer
H. Von Känel
OriginalPaper 10 February 2011 Pages: 203 - 208
Si/Ge/Si(001) Magnetron Sputter Heteroepitaxy: the Initial Stages of “Hut”- Cluster Overgrowth
B. Vögeli
M. Kummer
H. Von Känel
OriginalPaper 10 February 2011 Pages: 209 - 214
Role of Surface Instability and Anisotropy on Strain Relaxation of Sige on Si(110)
X. Deng
M. Krishnamurthy
OriginalPaper 10 February 2011 Pages: 215 - 220
Fabrication of Sub 30 Nanometer Sheets of Single Crystalline Silicon
J. G. Flemitng
OriginalPaper 10 February 2011 Pages: 221 - 226
Feasibility of Novel Si-Based Interminiband Lasers
Gregory Sun
Lionel Friedman
Richard A. Soref
OriginalPaper 10 February 2011 Pages: 227 - 232
Band Alignment of Si_1-xGe_x and Si_1-x-y.Ge_xC_y Quantum Wells on Si (001)
N. L. Rowell
R. L. Williams
W. Winter
OriginalPaper 10 February 2011 Pages: 235 - 243
Direct Optical Measurement of the valence band offset of p⁺ Si_1−x−yGe_xC_y/p⁻ Si (100) by Heterojunction Internal Photoemission
C. L. Chang
L. P. Rokhinson
J. C. Sturm
OriginalPaper 10 February 2011 Pages: 245 - 250
Photoluminescence in Strain Compensated Si/SiGeC Multiple Quantum Wells
R. Hartmann
U. Gennser
K. Ensslin
OriginalPaper 10 February 2011 Pages: 251 - 256
Strong Deviation of the Lattice Parameter in Si_1-x-yGe_xC_y Epilayers From Vegard’s Rule
J. Stangl
S. Zerlauth
F. Romanato
OriginalPaper 10 February 2011 Pages: 257 - 262
Epitaxial Growth and Electronic Characterization of Carboncontaining Silicon-Based Heterostructures
J. L. Hoyt
T. O. Mitchell
J. F. Gibbons
OriginalPaper 10 February 2011 Pages: 263 - 274
Carbon Incorporation in Si_1-yC_y Alloys Grown by Ultrahigh Vacuum Chemical Vapor Deposition
A. C. Mocuta
D. W. Greve
OriginalPaper 10 February 2011 Pages: 275 - 280
The Application of Novel Chemical Precursors for the Preparation of Si-Ge-C Heterostructures and Superlattices
David C. Nesting
John Kouvetakis
José Menéndez
OriginalPaper 10 February 2011 Pages: 281 - 286
Limitations to the use of Sb as a Surfactant During SiGe MBE
Glenn G. Jernigan
Conrad L. Silvestre
Phillip E. Thompson
OriginalPaper 10 February 2011 Pages: 289 - 294
Influence of Growth Conditions on the Thermal Quenching of Photoluminescence From Sige/Si Quantum Structures
I. A. Buyanova
W. M. Chen
B. Monemar
OriginalPaper 10 February 2011 Pages: 295 - 300
Low-Energy Plasma Enhanced Chemical Vapor Deposition
Carsten Rosenblad
Thomas Graf
Hans Von känel
OriginalPaper 10 February 2011 Pages: 301 - 306
Low Temperature Epitaxy of Si/Si_1-xGe_x/Si Multilayers by Low Pressure RTCVD for Very Thin Soi Applications
D. W. McNeill
D. L. Gay
H. S. Gamble
OriginalPaper 10 February 2011 Pages: 307 - 313
Loading Effects During Low-Temperature Seg of Si and SiGe
W. B. De Boer
D. Terpstra
R. Dekker
OriginalPaper 10 February 2011 Pages: 315 - 320
A Selective/Non-Selective Epitaxy Process For A Novel Sige Hbt Architecture
J. Schiz
J. M. Bonar
P. Shburn
OriginalPaper 10 February 2011 Pages: 321 - 326
Photoluminescence of SiSnC Alloys Grown on (100) Si Substrates
N. Wright
A. T. Khan
S. S. Iyer
OriginalPaper 10 February 2011 Pages: 327 - 332
A Novel Layer-by-layer Hetero-Epitaxy of Germanium on Silicon (100) Surface
S. Sugahara
M. Matsuyama
M. Matsumura
OriginalPaper 10 February 2011 Pages: 333 - 338
Comparative Growth Kinetics of Sige in A Commercial Reduced Pressure Chemical Vapour Deposition Epi Reactor and Anomalies During Growth of Thin Si Layers on Sige
Matity Caymax
Roger Loo
Kaoru Nakajima
OriginalPaper 28 October 1998 Pages: 339 - 344
Thermal Stability of SiGe/Si Quantum Well Structures Grown By APCVD
Q. X. Zhao
O. Nur
W. B. de Boer
OriginalPaper 10 February 2011 Pages: 345 - 348
Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si_1-xGe_x, Films Using Ultraclean LPCVD
A. Morrya
M. Sakuraba
N. Yabumoto
OriginalPaper 28 October 1998 Pages: 349 - 354

Volume 533, Issue 1

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