Volume 532, Issue 1

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December 1998

Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling

Issue Editors:

N. E. B. Cowern,
P. Griffin,
D. Jacobson,
P. Packan,
R. Webb,
E. Fogarassy

31 articles in this issue

Ultra Shallow Junction Formation by RTA at High Temperature for Short Heating Cycle Time
S. Saito
S. Shishiguchi
T. Matsuda
OriginalPaper 01 February 1999 Pages: 3 - 11
Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV
M. Kase
Y. Kikuchi
T. Kimura
OriginalPaper 01 February 1999 Pages: 13 - 16
Ultra Shallow Junction Formation by Cluster Ion Implantation
Jiro Matsuo
Takaaki Aoki
Isao Yamada
OriginalPaper 01 February 1999 Pages: 17 - 22
Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation
Kentaro Shibahara
Hiroaki Furumoto
Shin Yokoyama
OriginalPaper 01 February 1999 Pages: 23 - 28
The Importance of Pairing Reactions for the Modeling of Defect-Dopant Interactions in Silicon
I. Bork
A. V. Schwerin
OriginalPaper 01 February 1999 Pages: 29 - 34
Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon
Ning Yu
Amitabh Jain
Doug Mercer
OriginalPaper 01 February 1999 Pages: 35 - 40
Atomistic Modeling of Point and Extended Defects in Crystalline Materials
Martin Jaraiz
Lourdes Pelaz
John M. Poate
OriginalPaper 01 February 1999 Pages: 43 - 53
Boron Ted in Pre-Amorphised Si: Role of the A/C Interface
D. Mathiot
C. Bonafos
A. Claverie
OriginalPaper 01 February 1999 Pages: 55 - 60
Effect of the End of Range Loop Layer Depth on the Evolution of {311} Defects
R. Raman
M. E. Law
K. S. Jones
OriginalPaper 01 February 1999 Pages: 61 - 66
On the «A Symmetrical» Behavior of Transient Enhanced Diffusion in Pre-Amorphised Si Wafers
D. Alquier
N. E. B. Cowern
A. Claverie
OriginalPaper 01 February 1999 Pages: 67 - 72
In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K
C. R. Cho
R. A. Brown
R. Zuhr
OriginalPaper 01 February 1999 Pages: 73 - 78
Defect Tails in GE Implanted Si Probed by Slow Positrons and Ion Channeling
A. P. Knights
A. Nejim
S. Romani
OriginalPaper 01 February 1999 Pages: 79 - 84
Electrical Active Defects in the Band-Gap Induced by Ge-Preamorphization of Si-Substrates
F. Boussaid
F. Olivie
A. Martinez
OriginalPaper 01 February 1999 Pages: 85 - 90
Point-Defect Migration in Crystalline Si: Impurity Content, Surface and Stress Effects
S. Coffa
S. Libertino
F. Priolo
OriginalPaper 01 February 1999 Pages: 93 - 104
Moment-based Modeling of Extended Defects for Simulation of TED: What Level of Complexity is Necessary?
Alp H. Gencer
Scott T. Dunham
OriginalPaper 01 February 1999 Pages: 105 - 110
Determining the Enthalpy of Formation of A Si Interstitial Using Quantitative Tem and Sims
S. Bharatan
Y. M. Haddara
K. S. Jones
OriginalPaper 01 February 1999 Pages: 111 - 118
Interdiffusion Behavior of Si/Si_1-xGe_x Layers in Inert and Oxidizing Ambients
Michelle Griglione
Tim Anderson
Kevin Jones
OriginalPaper 01 February 1999 Pages: 119 - 124
Impact of Silicon Wafer Material on Dislocation Generation in Local Oxidation
I. V. Peidous
R. Sundaresan
M. Beh
OriginalPaper 01 February 1999 Pages: 125 - 129
Computer Simulation of Channeling Profile Analysis of Implantation Damage
Matthias Posselt
OriginalPaper 01 February 1999 Pages: 133 - 140
A Quasi-2D Model for Reverse Short Channel Effect
Huilong Zhu
OriginalPaper 01 February 1999 Pages: 141 - 146
Computer Simulation of Annealing after Cluster Ion Implantation
Z. Insepov
T. Aoki
I. Yamada
OriginalPaper 01 February 1999 Pages: 147 - 152
High Temperature Oxide for NVM Interpoly Dielectric Applications
J. A. Yater
B. Esho
W. M. Paulson
OriginalPaper 01 February 1999 Pages: 153 - 158
Tailoring of the Nitrogen Profile in Thin Gate Oxides Using Substrate Nitridation by Nitric Oxide
A. Halimaoui
E. Henrisey
F. Martin
OriginalPaper 01 February 1999 Pages: 159 - 164
Surface Science Studies of NF₃ Plasma and Ion Beam Interactions with Silicon
T. W. Little
S. C. Briggs
F. S. Ohuchi
OriginalPaper 01 February 1999 Pages: 165 - 170
Investigation of the Growth and Chemical Stability of Composite Metal Gates on Ultra-thin Gate Dielectrics
B. Claflin
M. Binger
H.-Y. Yang
OriginalPaper 01 February 1999 Pages: 171 - 176
Formation of Subthreshold Defects in Erbium Implanted Silicon
C. Flink
S. Mui
E. R. Weber
OriginalPaper 01 February 1999 Pages: 177 - 184
Impurity Diffusion in SiGe Alloys: Strain and Composition Effects
Arne Nylandsted Larsen
OriginalPaper 01 February 1999 Pages: 187 - 198
Crystalline Structure Around the Single Vacancy in Silicon: Formation Volume and Stress Effects
A. Antonellip
Efthimios Kaxiras
D. J. Chadi
OriginalPaper 01 February 1999 Pages: 199 - 204
New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon
Zokirkhon M. Khakimov
OriginalPaper 01 February 1999 Pages: 205 - 211
Activation Enthalpy of Sb Diffusion in Biaxially Compressed SiGe Layers
A. Yu. Kuznetsovt
J. Cardenast
J. Lundsgaard Hansen
OriginalPaper 01 February 1999 Pages: 213 - 218
Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc from Silicon
A. Giese
H. Bracht
N. A. Stolwijk
OriginalPaper 01 February 1999 Pages: 219 - 224

Volume 532, Issue 1

Ultra Shallow Junction Formation by RTA at High Temperature for Short Heating Cycle Time

Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

Ultra Shallow Junction Formation by Cluster Ion Implantation

Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation

The Importance of Pairing Reactions for the Modeling of Defect-Dopant Interactions in Silicon

Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon

Atomistic Modeling of Point and Extended Defects in Crystalline Materials

Boron Ted in Pre-Amorphised Si: Role of the A/C Interface

Effect of the End of Range Loop Layer Depth on the Evolution of {311} Defects

On the «A Symmetrical» Behavior of Transient Enhanced Diffusion in Pre-Amorphised Si Wafers

In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K

Defect Tails in GE Implanted Si Probed by Slow Positrons and Ion Channeling

Electrical Active Defects in the Band-Gap Induced by Ge-Preamorphization of Si-Substrates

Point-Defect Migration in Crystalline Si: Impurity Content, Surface and Stress Effects

Moment-based Modeling of Extended Defects for Simulation of TED: What Level of Complexity is Necessary?

Determining the Enthalpy of Formation of A Si Interstitial Using Quantitative Tem and Sims

Interdiffusion Behavior of Si/Si_1-xGe_x Layers in Inert and Oxidizing Ambients

Impact of Silicon Wafer Material on Dislocation Generation in Local Oxidation

Computer Simulation of Channeling Profile Analysis of Implantation Damage

A Quasi-2D Model for Reverse Short Channel Effect

Computer Simulation of Annealing after Cluster Ion Implantation

High Temperature Oxide for NVM Interpoly Dielectric Applications

Tailoring of the Nitrogen Profile in Thin Gate Oxides Using Substrate Nitridation by Nitric Oxide

Surface Science Studies of NF₃ Plasma and Ion Beam Interactions with Silicon

Investigation of the Growth and Chemical Stability of Composite Metal Gates on Ultra-thin Gate Dielectrics

Formation of Subthreshold Defects in Erbium Implanted Silicon

Impurity Diffusion in SiGe Alloys: Strain and Composition Effects

Crystalline Structure Around the Single Vacancy in Silicon: Formation Volume and Stress Effects

New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

Activation Enthalpy of Sb Diffusion in Biaxially Compressed SiGe Layers

Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc from Silicon

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