Volume 52, Issue 1

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December 1985

Symposium B — Rapid Thermal Processing

Issue Editors:

T. O. Sedgwick,
T. E. Seidel,
B.-Y. Tsaur

54 articles in this issue

Diffusion Modeling of the Redistribution of Ion Implanted Impurities
Alwin E. Michel
OriginalPaper 15 April 1985 Pages: 3 - 13
Rapid Thermal Annealing of As in Si
J. L. Hoyt
J. F. Gibbons
OriginalPaper 15 April 1985 Pages: 15 - 22
Metastable Activation in Rapid Thermal Annealed Arsenic Implanted Silicon
Avid Kamgar
F. A. Baiocchi
OriginalPaper 15 April 1985 Pages: 23 - 29
Stability of Heavily Doped Si Formed by As⁺ Implantation and Rapid Thermal Annealing
Muhammad Z. Numan
Z. H. Lu
J. J. Wortman
OriginalPaper 15 April 1985 Pages: 31 - 36
The Role of Trapped Interstitials During Rapid Thermal Annealing
S. J. Pennycook
R. J. Culbertson
OriginalPaper 15 April 1985 Pages: 37 - 48
A New Model of Tail Diffusion of Phosphorus and Boron in Silicon
Frederick F. Morehead
R. F. Lever
OriginalPaper 15 April 1985 Pages: 49 - 56
Study of “Reverse Annealing” of Boron Under Low Temperature Lamp Anneals
J. Huang
R. J. Jaccodine
OriginalPaper 15 April 1985 Pages: 57 - 64
Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon
N. E. B. Cowern
K. J. Yallup
D. S.. McPhail
OriginalPaper 15 April 1985 Pages: 65 - 72
Dopant Redistribution During Pd₂Si Formation Using Rapid Therm1al Annealing
Nadeem S. Alvi
Dim L. Kwong
Scott G. Baumane
OriginalPaper 15 April 1985 Pages: 73 - 81
A Simple, Non-Destructive Optical Technique to Characterize Ion-Implanted Semiconductor Wafers
Jeff F. Young
H. R. Jensen
Martine Simard-Normandin
OriginalPaper 15 April 1985 Pages: 83 - 90
Extended Defects in Amorphized and Rapid-Thermally Annealed Silicon
D. M. Maher
R. V. Knoell
D. C. Jacobson
OriginalPaper 15 April 1985 Pages: 93 - 105
Ge+ Preamorphization of Si: Effects of Dose and Very Low Temperature Thermal Treatment on Extended Defect Formation During Subsequent Spe
E. Myers
G. A. Rozgonyi
J. Narayan
OriginalPaper 15 April 1985 Pages: 107 - 113
Recrystallization Kinetics During Fast Thermal Annealing of \({\rm{PF}}_{\rm{n}}^ + \) Implanted Silicon
W. O. Adekova
J. C. Muller
L. Pedulli
OriginalPaper 15 April 1985 Pages: 115 - 122
Regrowth Rates of Amorphous Layers in Silicon-on-Sapphire Films
P. J. Timans
R. A. McMahon
H. Ahmed
OriginalPaper 15 April 1985 Pages: 123 - 130
Amorphous Phase Transformation During Rapid Thermal Annealing of Ion-Implanted Si
D. Kirillov
R. A. Powell
D. T. Hodul
OriginalPaper 15 April 1985 Pages: 131 - 138
The Structure of Oxygen-Implanted (111) Silicon Before and After Heat-Pulse Annealing
Z. Liliental-Weber
R. W. Carpenter
J. C. Kelly
OriginalPaper 15 April 1985 Pages: 139 - 144
Structural Changes During Transient Post-Annealing of Preannealed and Arsenic Implanted Polycrystalline Silicon Films
S. J. Krause
S. R. Wilson
P. Stoss
OriginalPaper 15 April 1985 Pages: 145 - 152
DLTS Characterization of N-Type Silicon After Rapid Thermal Annealing of Boron Implantation
C. M. Ransom
T. O. Sedgwick
S. A. Cohen
OriginalPaper 15 April 1985 Pages: 153 - 156
Rapid Thermal Annealing of Al and P Implanted Single Crystal Beta Silicon Carbide Thin Films
J. A. Edmond
H. J. Kim
R. F. Davis
OriginalPaper 15 April 1985 Pages: 157 - 164
Rapid Thermal Annealing of B or N Implanted Monocrystalline 1-SiC Thin Films and its Effect on Electrical Properties and Device Performance
Jae Ryu
H. J. Kim
R. F. Davis
OriginalPaper 15 April 1985 Pages: 165 - 171
Deep Level Spectra of Ion-Implantation Defects and Slip Dislocations Introduced by CO₂ Laser
X. M. Bao
X. Y. Zhang
X. Q. Zheng
OriginalPaper 15 April 1985 Pages: 173 - 178
An Overview and Comparison of Rapid Thermal Processing Equipment: a Users Viewpoint
S. R. Wilson
R. B. Gregory
W. M. Paulson
OriginalPaper 15 April 1985 Pages: 181 - 190
Temperature Measurement and Control in a Rapid Thermal Processor
Ronald E. Sheets
OriginalPaper 15 April 1985 Pages: 191 - 197
Process Control for a Rapid Optical Annealing System
Jeffrey C. Gelpey
Paul O. Stump
John W. Smith
OriginalPaper 15 April 1985 Pages: 199 - 207
The Effect of Thin Dielectric Films on the Accuracy of Pyrometric Temperature Measurement
D. W. Pettibone
J. R. Suarez
A. Gat
OriginalPaper 15 April 1985 Pages: 209 - 216
Comparison of Short Time Annealing of Implanted Silicon Layers With Tungsten-Halogen Lamp and Mercury Arc Lamp Sources
D. Wouters
D. Avau
H. E. Maes
OriginalPaper 15 April 1985 Pages: 217 - 223
Rapid Thermal Annealing of Ion Implanted p-n Junction in Silicon
C. Ho
R. Kwor
J. Gelpey
OriginalPaper 15 April 1985 Pages: 225 - 232
Characterization of PSG Films Reflowed in Steam Using Rapid Thermal Processing
N. Shah
J. M. C. Vittie
A. Gat
OriginalPaper 15 April 1985 Pages: 233 - 240
Rapid Thermal Anneaung of Arsenic-Phosphorus(N⁺-N⁻) Double-Diffused Shallow Junctions
D. L. Kwong
N. S. Alvi
A. W. Cheung
OriginalPaper 15 April 1985 Pages: 241 - 249
Rapid Isothermal Fusion of BPSG Films
J. S. Mercier
L. D. Madsen
I. O. Calder
OriginalPaper 15 April 1985 Pages: 251 - 258
Silicides and Rapid Thermal Annealing
F. M. d’Heurle
R. T. Hodgson
C. Y. Ting
OriginalPaper 15 April 1985 Pages: 261 - 270
Direct Silicidation of Co on Si by Rapid Thermal Annealing
M. Tabasky
E. S. Bulat
S. Shatas
OriginalPaper 15 April 1985 Pages: 271 - 277
Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen
A. E. Morgan
E. K. Broadbent
A. H. Reader
OriginalPaper 15 April 1985 Pages: 279 - 287
Characterization of Tungsten Silicides Formed by Rapid Thermal Annealing.
M. Siegal
J. J. Santiago
J. Van Der Spiegel
OriginalPaper 15 April 1985 Pages: 289 - 295
Rapic Thermal Annealing of W-TI Bilayers on Silicon
C. S. Wei
J. Van Der Spiegel
S. Blackstone
OriginalPaper 15 April 1985 Pages: 297 - 303
Limited Reaction Processing of Silicon: Oxidation and Epitaxy
C. M. Gronet
J. C. Sturm
J. F. Gibbons
OriginalPaper 15 April 1985 Pages: 305 - 312
Silicon Oxidation by Rapid Thermal Processing (RTP)
A. M. Hodge
C. Pickering
R. W. Hardeman
OriginalPaper 15 April 1985 Pages: 313 - 319
Oxide Growth Using the Water-Wall ARC Lamp
Jeffrey C. Gelpey
Paul O. Stump
Ronald A. Capodilupo
OriginalPaper 15 April 1985 Pages: 321 - 325
SiO₂ Growth and Annealing by Lamp heating
Z. A. Weinberg
T. N. Nguyen
R. Kalish
OriginalPaper 15 April 1985 Pages: 327 - 332
Kinetic Studies of Silicon - Silicon Dioxide Interface Trap Annealing Using Rapid Thermal Processing
Michael L. Reed
James D. Plummer
OriginalPaper 15 April 1985 Pages: 333 - 340
Material and Electrical Properties of Gate Dielectrics Grown by Rapid Thermal Processing
J. Nulman
J. P. Krusius
P. Renteln
OriginalPaper 15 April 1985 Pages: 341 - 348
Transient Thermal Processing of GaAs
S. J. Pearton
J. M. Gibson
D. O. Boerma
OriginalPaper 15 April 1985 Pages: 351 - 360
Damage Removal Processes in Ion Implanted, Rapidly Annealed GaAs
D. C. Jacobson
S. J. Pearton
J. S. Williams
OriginalPaper 15 April 1985 Pages: 361 - 367
The Effect of Impurities in the SPE Kinetics in GaAs
C. Licoppe
Y. I. Nissim
C. Meriadec
OriginalPaper 15 April 1985 Pages: 369 - 374
Rapid Annealing of GaAs: Uniformity and Temperature Dependence of Activation
K. D. Cummings
S. J. Pearton
G. P. Vella-Coleiro
OriginalPaper 15 April 1985 Pages: 375 - 381
Rapid Themal Annealing of Shallow, Diffused Contact Regions in GaAs
N. J. Kepler
N. W. Cheung
P. K. Chu
OriginalPaper 15 April 1985 Pages: 383 - 389
A Study of Se⁺ Implants into Encapsulated GaAs
R. Gwilliam
M. A. Shahid
B. J. Sealy
OriginalPaper 15 April 1985 Pages: 391 - 396
Rapid Optical Annealing for Improved GaAs FET Uniformity
Thomas E. Kazior
Kamal Tabatabaie-Alavi
OriginalPaper 15 April 1985 Pages: 397 - 402
Rapid Thermal Annealing of Be Implanted in _0.53Ga _0.47As
Christine S. Lam
Clifton G. Fonstad
OriginalPaper 15 April 1985 Pages: 403 - 407
A GaAs Sagfet Process Using TiSi₂ and Rapid Thermal Annealing
D. Wood
J. Mun
OriginalPaper 15 April 1985 Pages: 409 - 416

Volume 52, Issue 1

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