Volume 514, Issue 1

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December 1998

Symposium I - Advanced Interconnects & Contact Materials & Processes forh.

Issue Editors:

M. Eizenberg,
D. B. Fraser,
R. Madar,
S. P. Murarka,
R. Tung

100 articles in this issue

Interconnection Limits on XXI Century Gigascale Integration (GSI)
James D. Meindl
OriginalPaper 01 December 1998 Pages: 3 - 9
Power Supply Distribution and Other Wiring Issues For deep-submicron Ic’s
W. T. Lynch
L. A. Arledge Jr
OriginalPaper 01 December 1998 Pages: 11 - 27
Multilevel Interconnection Technologies and Future Requirements for Logic Applications
M. Brillouët
OriginalPaper 01 December 1998 Pages: 29 - 37
Copper Ulsi Interconnect Technology
D. Edelstein
OriginalPaper 01 December 1998 Pages: 39 - 39
Integration of Multi-Level Copper Metallization into a High Performance Sub-0.25μM Technology
R. Venkatraman
A. Jain
E. Weitzman
OriginalPaper 01 December 1998 Pages: 41 - 52
Scaling and Integration of High Performance Interconnects
Simon Yang
OriginalPaper 01 December 1998 Pages: 53 - 64
Sub-Quarter Micron Metallization Using Ionized Metal Plasma Technology
Fusen Chen
Zheng Xu
Ashok Sinha
OriginalPaper 01 December 1998 Pages: 65 - 73
Barriers For Copper Interconnections
S. Simon Wong
Changsup Ryu
Kee-Won Kwon
OriginalPaper 01 December 1998 Pages: 75 - 81
Materials and Devices for Silicon On-Chip Optical Interconnect
J. M. Ballantyne
OriginalPaper 01 December 1998 Pages: 83 - 87
Texture Control and Electromigration Performance in Al-Based and Cu-Based Layered Interconnects
Makiko Kageyama
Kazuhide Abe
Hiroshi Onoda
OriginalPaper 01 December 1998 Pages: 91 - 102
Al Dual Damascene Technology for Multilevel Interconnects
Kuniko Kikuta
OriginalPaper 01 December 1998 Pages: 103 - 103
Crystallographic Texture and Phase Formation in Blanket TifriN/AICu Films
P. W. DeHaven
L. A. Clevenger
K. P. Rodbell
OriginalPaper 01 December 1998 Pages: 105 - 105
Microstructure and Lifetime Study of Al/Y Films
L. Vedula
V. Pillai
S. J. Pennycook
OriginalPaper 01 December 1998 Pages: 107 - 112
Investigation of the Homovalent Impurity in Aluminum to Form Alloys With Enhanced Interconnect Reliability
Sridhar K. Kailasam
S. P. Murarka
S. M. Merchant
OriginalPaper 01 December 1998 Pages: 113 - 118
Simulators of Thin Film Deposition for Silicon Device Processing
G. H. Gilmer
F. H. Baumann
T. Diaz de la Rubia
OriginalPaper 01 December 1998 Pages: 119 - 119
Study of Factor and Interaction Effects During Programmed Rate Chemical Vapor Deposition of Aluminum
D. Yang
R. Jonnalagaddal
T. S. Cale
OriginalPaper 01 December 1998 Pages: 121 - 126
Monte Carlo Atomistic Simulation of Polycrystalline Aluminum Deposition
J. Emiliano Rubio
Martín Jaraíz
George H. Gilmer
OriginalPaper 01 December 1998 Pages: 127 - 132
Comparison of the Electromigration Behavior of Al(MgCu) with Al(Cu) and Al(SiCu)
Hua Li
Ann Witvrouw
Ludo Froyen
OriginalPaper 01 December 1998 Pages: 133 - 138
Imaging Spatial Variations in Resistance Along Interconnects
Qingzhe Wen
David R. Clarke
OriginalPaper 01 December 1998 Pages: 139 - 139
Debonding of Interfaces in Multilayer Interconnect Structures
Michael Lane
Winnie Ni
Nety Krishna
OriginalPaper 01 December 1998 Pages: 141 - 141
Growth, Patterning and Microelectronic Applications of Epitaxial Cobaltdisilicide
S. Mantl
L. Kappius
K. H. Heinig
OriginalPaper 01 December 1998 Pages: 145 - 155
Improved Thermal Stability of Ultrathin CoSi₂ Layers by Oxygen Annealing
R. T. Tung
S. Ohmi
OriginalPaper 01 December 1998 Pages: 157 - 162
Nanopatterning of Thin Cobaltdisilicide Layers by Local Oxidation
F. Klinkhammer
L. Kappius
K.-H. Heinig
OriginalPaper 01 December 1998 Pages: 163 - 163
Thickness Effects in the Reaction of Cobalt with Slicon-Germanium Alloys
B. I. Boyanov
P. T. Goeller
R. J. Nemanich
OriginalPaper 01 December 1998 Pages: 165 - 170
Silicide Technology in Deep Submicron Regime
K. Suguro
T. Iinuma
Y. Toyoshima
OriginalPaper 01 December 1998 Pages: 171 - 178
Integration of NiSi SALICIDE for Deep Submicron CMOS Technologies
X. W. Lin
N. Ibrahirn
D. Pramanik
OriginalPaper 01 December 1998 Pages: 179 - 184
Morphology of NISI Film on Si(100): Role of the Interface Strain
Eliane Maillard-Schaller
B. I. Boyanov
R. J. Nemanich
OriginalPaper 01 December 1998 Pages: 185 - 189
Formation and Thermal Stability of Nd_0.32Y_0.68Si_1.7 Layers Formed by Channeled Ion Beam Synthesis
M. F. Wu
A. Vantomne
H. Bender
OriginalPaper 01 December 1998 Pages: 191 - 196
Growth and Characterization of Self-Aligned Erbium Silicide on N-Type, (100) Oriented Silicon
Suhit R. Das
Les LeBrun
G. Irwin Sproule
OriginalPaper 01 December 1998 Pages: 197 - 197
Low Temperature Formation of C54 TiSi₂ Bypassing the C49 Phase: Effect of Si Crystallinity, Metallic Impurities and Applications TO 0.10 μm CMOS
J. A. Kittl
M. A. Gribelyuk
M. Rodder
OriginalPaper 01 December 1998 Pages: 201 - 206
Mechanism of Narrow Line Effect in TiSi₂ films on highly As-Doped Diffusion Layers
Koichi Ishida
Hitoshi Wakabayashi
Tohru Mogami
OriginalPaper 01 December 1998 Pages: 207 - 212
C49-TiSi₂ Epitaxial Orientation Dependence of the C49-to-C54 Phase Transformation Rate
T. Nakamura
K. Ikeda
K. Nakajima
OriginalPaper 01 December 1998 Pages: 213 - 218
Kinetics of the C49–C54 transformation in patterned and blanket TiSi₂ films: a comparison.
F. La Via
S. Privitera
L. Miglio
OriginalPaper 01 December 1998 Pages: 219 - 224
Suppression of the Phase Transition and Agglomeration of TiSi₂ by Addition of Zr Element
Sanghyun Yoon
Hyeongtag Jeon
OriginalPaper 01 December 1998 Pages: 225 - 230
Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted Silicon
Hua Fang
Mehmet C. Ozttirk
Edmund G. Seebauer
OriginalPaper 01 December 1998 Pages: 231 - 236
The Control and Impact of Processing Ambient During RTP
Karen Maex
Eiichi Kondoh
Joris Prost
OriginalPaper 01 December 1998 Pages: 239 - 239
New Approaches for Formation of Ultra-Thin PtSi Layers for Infrared Applications
Ricardo A. Donaton
Sing Jin
Guido Langouche
OriginalPaper 01 December 1998 Pages: 241 - 241
IS Selective CVD an Improvement for the Titanium Silicide Process in Sub-Quarter Micron Technology? A Phase Formation Study Using X-ray Diffraction
Ronnen Roy
Cryil Cabral Jr.
Johanes Swenberg
OriginalPaper 01 December 1998 Pages: 243 - 243
A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 μm CMOS Devices
L. P. Ren
P. Liu
Jason C. S. Woo
OriginalPaper 01 December 1998 Pages: 245 - 249
Process Design & Integration of Salicide and Source/Drain process Modules for Improved Device Performance
Pushkar P. Apte
Shared Saxena
Gordon Pollack
OriginalPaper 01 December 1998 Pages: 251 - 251
A Study of Transistor Optimization in A 0.25 Micron CMOS Flow Using S/D and Silicide Process Modules and Their Interactions
K. Vasanth
P. Apte
P. K. Mozumder
OriginalPaper 01 December 1998 Pages: 253 - 253
Optimization of Ti and Co Self-Aligned Silicide RTP for 0.10 μm CMOS
J. A. Kittl
Q. Z. Hong
M. F. Pas
OriginalPaper 01 December 1998 Pages: 255 - 260
Capacitance-Voltage, Current Voltage, and Thermal Stability of Copper Alloyed With Aluminum or Magnesium
T. Suwwan de Felipe
S. P. Murarka
W. A. Lanford
OriginalPaper 01 December 1998 Pages: 263 - 268
Properties of Cu₃Ge Films for Contacts to Si and SiGe and Cu Metallization
Mark A. Borek
S. Oktyabrsky
J. Narayan
OriginalPaper 01 December 1998 Pages: 269 - 274
Copper Electroplating for Damascene ULSI Interconnects
V. M. Dubin
S. Lopatin
S. S. Wong
OriginalPaper 01 December 1998 Pages: 275 - 280
Homogenization of the Bilayers of Cu-Al Alloy and Pure Copper to Produce CU-0.3 at.% Al Alloy Films
Pei-I Wang
S. P. Murarka
W. A. Lanford
OriginalPaper 01 December 1998 Pages: 281 - 286
Extendibility of Cu Damascene to 0.1 μm Wide Interconnections
C. K. Hu
K. Y. Lee
J. M. E. Harper
OriginalPaper 01 December 1998 Pages: 287 - 292
Microstructure and Texture of Electroplated Copper in Damascene Structures
M. E. Gross
C. Lingk
F. Zhang
OriginalPaper 01 December 1998 Pages: 293 - 298
Finite Element Modeling for Interconnect Materials and Structures
Lori Bassman
Peter Pinsky
Michael Deal
OriginalPaper 01 December 1998 Pages: 299 - 299
Mocvd of Copper from the Solution of New and Liquid Precursor (hfac)Cu(1-pentene)
H. K. Shin
Y. H. Cho
E. S. Lee
OriginalPaper 01 December 1998 Pages: 301 - 301

Volume 514, Issue 1

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