Volume 512, Issue 1

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December 1998

Symposium F — Wide Bandgap Semiconductors for High Power, High Frequency

Issue Editors:

S. Denbaars,
J. Palmour,
M. S. Shur,
M. Spencer

90 articles in this issue

GaN Materials for High Power Microwave Amplifiers
Lester F. Eastman
Kenneth Chu
J. Richard Shealy
OriginalPaper 10 February 2011 Pages: 3 - 7
Double Channel AlGaN/GaN Heterostructure Field Effect Transistor
R. Gaska
M. S. Shur
T. A. Fjeldly
OriginalPaper 10 February 2011 Pages: 9 - 13
Temperature Dependence of Breakdown Field in p-π-n GaN Diodes
A. Osinsky
M. S. Shur
R. Gaska
OriginalPaper 10 February 2011 Pages: 15 - 20
Low Frequency Noise In n-Type Gallium Nitride
N. Dyakonova
M. Levinshtein
P. Gibart
OriginalPaper 10 February 2011 Pages: 21 - 26
Nitride Based High Power Devices: Transport Properties, Linear Defects And Goals
Z. Z. Bandić
P. M. Bridger
T. C. Mcgill
OriginalPaper 10 February 2011 Pages: 27 - 32
Growth of AlN Single Crystals
Glen A. Slack
OriginalPaper 10 February 2011 Pages: 35 - 40
A New Approach to Growth of Bulk Zno Crystals for Wide Bandgap Applications
G. Agarwal
J. E. Nause
D. N. Hill
OriginalPaper 10 February 2011 Pages: 41 - 46
Gan Nucleation Mechanism on A Surface Template of Oxidized AIAs
Nobuhiko P. Kobayashi
Junko T. Kobayashi
P. Daniel Dapkus
OriginalPaper 10 February 2011 Pages: 47 - 52
MOCVD Growth of Gan on Silicon and Related Surfaces
J. Han
J. G. Fleming
D. M. Follstaedt
OriginalPaper 10 February 2011 Pages: 53 - 58
Flow Modulation Epitaxial Lateral Overgrowth of Gallium Nitride on Masked 6H-Silicon Carbide and Sapphire Surfaces
J. A. Smart
E. M. Chumbes
J. R. Shealy
OriginalPaper 10 February 2011 Pages: 59 - 64
Two-Step Growth of Gan Quantum Dots with Metalorganic Chemical Vapor Deposition
P. Chen
B. Shen
Y. D. Zheng
OriginalPaper 10 February 2011 Pages: 65 - 68
Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH₃
N. Grandjean
M. Leroux
P. Lorenzini
OriginalPaper 10 February 2011 Pages: 69 - 74
High Voltage Silicon Carbide Devices
B. Jayant Baliga
OriginalPaper 10 February 2011 Pages: 77 - 88
A Theoretical and Empirical Perspective of SiC Bulk Growth
V. F. Tsvetkov
D. N. Henshall
C. H. Carter Jr.
OriginalPaper 10 February 2011 Pages: 89 - 99
The Response of High Voltage 4H-SiC P-N Junction Diodes to Different Edge Termination Techniques
T. N. Oder
C. C. Tin
T. S. Sudarshan
OriginalPaper 10 February 2011 Pages: 101 - 106
Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications
P. G. Neudeck
W. Huang
C. Fazi
OriginalPaper 10 February 2011 Pages: 107 - 112
The Origin of Nanopipes and Micropipes in Non-Cubic GaN and SiC
P. Pirouz
OriginalPaper 10 February 2011 Pages: 113 - 118
5.5 kV Bipolar Diodes From High Quality CVD 411-SiC
K.G. Irvine
R. Singh
C. H. Carter Jr.
OriginalPaper 10 February 2011 Pages: 119 - 124
High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC
C. M. Zetterling
M. Östling
U. Jansson
OriginalPaper 10 February 2011 Pages: 125 - 130
Silicon Carbide Epitaxial Layers Grown on SiC Wafers with Reduced Micropipe Density
S. Rendakova
N. Kuznetsov
V. Dmitriev
OriginalPaper 10 February 2011 Pages: 131 - 136
Cathodoluminescence Deep Level Spectroscopy of Etched and In-Situ Annealed 6H-SiC
A. P. Young
K. Aptowitz
L. J. Brillson
OriginalPaper 10 February 2011 Pages: 137 - 142
The Closed-Form Solutions for the Breakdown Voltages of 6H-SiC Reachthrough Diodes
You-Sang Lee
D. S. Byeon
Min-Koo Han
OriginalPaper 10 February 2011 Pages: 143 - 148
Investigation of Microplasma Breakdown in 4H Silicon Carbide
Uwe Zimmermann
Anders Hallén
Bo Breitholtz
OriginalPaper 10 February 2011 Pages: 151 - 156
Hot Spots In 4H Sic P⁺N Diodes Studied By The Optical Beam Induced Current Technique
M. Frischholz
K. Nordgren
M. Bakowski
OriginalPaper 10 February 2011 Pages: 157 - 162
Scandium and Gallium Implantation Doping of Silicon Carbide
T. Henkel
Y. Tanaka
T. Ohshima
OriginalPaper 10 February 2011 Pages: 163 - 168
Low Temperature Chemical Vapor Deposition of 3C-SiC on 6H-SiC–an X-Ray Triple Crystal Diffractometry and X-Ray Topography Study
J. Chaudhur
K. Ignatiev
Y. Gao
OriginalPaper 10 February 2011 Pages: 169 - 174
The Estimation and revision of barrier heights in 4H- SiC and 6H-sic Schottky Diodes
You-Sang Lee
D. Y. Kim
Y. I. Choi
OriginalPaper 10 February 2011 Pages: 175 - 180
Piezoelectric Quantization in GaInN thin Films and Multiple Quantum Well Structures
Christian Wetzel
Tetsuya Takeuchi
Isamu Akasaki
OriginalPaper 10 February 2011 Pages: 181 - 186
The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells
Piotr Perlin
Christian Kisielowski
Eicke R. Weber
OriginalPaper 10 February 2011 Pages: 187 - 192
Carrier relaxation and recombination in InGaN/GaN quantum heterostructures probed with time-resolved cathodoluminescence
Xingang Zhang
D. H. Rich
P. D. Dapkus
OriginalPaper 10 February 2011 Pages: 193 - 198
Study of Stimulated Emission in InGaN/GaN Multi-Quantum Wells in the Temperature Range of 175 k to 575 k
S. Bidnyk
Y. H. Cho
S. P. Denbaars
OriginalPaper 10 February 2011 Pages: 199 - 204
Role of Nanopipes in Degradation of AlGaN/InGaN/GaN Devices Operating at High Voltage
Marek Osiński
Jinhyun Lee
Daniel L. Barton
OriginalPaper 10 February 2011 Pages: 205 - 210
Turn-on Process in High Voltage 4H-SiC Thyristors
N. V. Dyakonova
M. E. Levinshtein
R. Singh
OriginalPaper 10 February 2011 Pages: 211 - 216
Electrical Stabilization of Diamond Mis Interface and Misfets by Ultrahigh-Vacuum Process
Young Yun
Tetsuro Maki
Takeshi Kobayashi
OriginalPaper 10 February 2011 Pages: 217 - 222
Effect of No on the Electrical Characteristics of SiO₂ Grown on P-Type 4H SiC
H. F. Li
S. Dimitrijev
P. Tanner
OriginalPaper 10 February 2011 Pages: 223 - 226
Nitridation of Substrates With Hydrazine Cyanurate for The Growth of Gallium Nitride
T. J. Kropewnicki
P. A. Kohl
OriginalPaper 10 February 2011 Pages: 227 - 232
Reaction Processes at the Initial Stage of Diamond Nucleation on the Surface of Si(111)
Fangqing Xie
Youcun Chen
Zhangda Lin
OriginalPaper 10 February 2011 Pages: 233 - 238
Deep Levels in High Resistivity AlGaN Films Grown by MOCVD
A. Y. Polyakov
N. B. Smirnov
J. M. Redwing
OriginalPaper 10 February 2011 Pages: 239 - 244
Studies on the Intermetallic Semiconductor RuAl₂
V. Ponnambalam
U. V. Varadaraju
OriginalPaper 10 February 2011 Pages: 245 - 248
Semiconducting Molybdenum Pyrochlores for high Temperature Applications
V. Ponnambalam
U. V. Varadaraju
OriginalPaper 10 February 2011 Pages: 249 - 254
CVD Diamond as Dielectric Material for Capacitor Applications
S. Heidger
S. Fries-Carr
R. Wu
OriginalPaper 10 February 2011 Pages: 255 - 260
Vacancy-Type Defects in as-Grown and Proton-Irradiated 6H-SiC
Werner Puff
Peter Mascher
Adam G. Balogh
OriginalPaper 10 February 2011 Pages: 261 - 266
Optical Characteristics of Mocvd-Grown Ingan/Gan Multiple Quantum Wells Investigated by Excitation Energy Dependent Pl and Ple Spectroscopy
Yong-Hoon Cho
J. J. Song
S. P. DenBaars
OriginalPaper 10 February 2011 Pages: 267 - 272
Comparative Study of Gan Movpe Growth Processes Using Two Different “Surface Preparation-Carrier Gas” Combinations
P. Vennegues
S. Haffouz
B. Beaumont
OriginalPaper 10 February 2011 Pages: 273 - 278
Thermally Stable Schottky Contacts to n-GaN
H. S. Venugopalan
S. E. Mohney
OriginalPaper 10 February 2011 Pages: 279 - 283
Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in C1₂/Ar and BCl₃/Cl₂/Ar Chemistries
N. Medelci
A. Tempez
A. Bensaoula
OriginalPaper 10 February 2011 Pages: 285 - 290
Calculation of Unstable Mixing Region in Wurtzite InGaN
Toru Takayama
Tetsuzo Ueda
James S. Harris Jr.
OriginalPaper 10 February 2011 Pages: 291 - 296
Spatial characterization of Doped Sic Wafers
J. C. Burton
L. Sun
I. Ferguson
OriginalPaper 10 February 2011 Pages: 297 - 301
Transient Photoconductivity of GaN Thin Film on Sapphire Substrate
Z. Z. Chen
B. Shen
F. Chen
OriginalPaper 10 February 2011 Pages: 303 - 307
Bulk Breakdown in AlGaN/GaN HFETs
G. Gradinaru
N. C. Kao
T. S. Sudarshan
OriginalPaper 10 February 2011 Pages: 309 - 314

Volume 512, Issue 1

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