Volume 490, Issue 1

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December 1997

Symposium Q — Semiconductor Process & Device Performance Modeling

Issue Editors:

S.T. Dunham,
J.S. Nelson,
C.D. Wilson

39 articles in this issue

3D Atomistic Simulations of Submicron Device Fabrication
Marius M. Bunea
Scott T. Dunham
OriginalPaper 15 October 1997 Pages: 3 - 8
Arsenic Deactivation in Silicon
M. A. Berding
A. Sher
OriginalPaper 15 October 1997 Pages: 9 - 14
A New Practical Approach to Implement a Transient Enhanced Diffusion Model into an FEM-Based 2-D Process Simulator
Noriyuki Sugiyasu
Kaina Suzuki
Hiroshi Goto
OriginalPaper 15 October 1997 Pages: 15 - 20
Atomistic Modeling of the Ion Implantation Step Within a 2D Process Simulator
Bruno Schmidt
Matthias Posselt
Thomas Feudel
OriginalPaper 15 October 1997 Pages: 21 - 26
Computationally Efficient Model for 2D Ion Implantation Simulation
Misha Temkin
Ivan Chakarov
OriginalPaper 15 October 1997 Pages: 27 - 32
A Three-Dimensional Monte Carlo Model for Phosphorus Implants into (100) Single-Crystal Silicon
Myung-Sik Son
Ho-Jung Hwang
OriginalPaper 15 October 1997 Pages: 33 - 39
First-Principles Study of Point-Defect Production in Si and SiC
W. Windl
T. J. Lenosky
A. F. Voter
OriginalPaper 15 October 1997 Pages: 41 - 46
The Effect of a Thin Sample on the Extended Defect Evolution in Si⁺ Implanted Si
Jing-Hong Li
Kevin S. Jones
OriginalPaper 15 October 1997 Pages: 47 - 51
Atomie Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching
Kwang-Ki Choi
Tae-Yeon Seong
Yong Sun Sohn
OriginalPaper 15 October 1997 Pages: 53 - 58
Atomic Dynamics During Silicon Oxidation and the Nature of Defects at the Si-SiO₂ Interface
S. T. Pantelides
M. Ramamoorthy
OriginalPaper 15 October 1997 Pages: 59 - 70
Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO₂ Interface Defects
G. V. Gadiyak
OriginalPaper 15 October 1997 Pages: 71 - 76
Nucleation and Growth of Voids in Silicon
P. S. Plekhanov
U. M. Gösele
T. Y. Tan
OriginalPaper 15 October 1997 Pages: 77 - 82
The Application of GaAs TCAD in Industry
P. A. Blakey
Deepak
S. Varadarajan
OriginalPaper 15 October 1997 Pages: 83 - 91
Modeling of Atom Diffusion and Segregation in Semiconductor Heterostructures
Hartmut Bracht
Wladek Walukiewicz
Eugene E. Haller
OriginalPaper 15 October 1997 Pages: 93 - 98
Simulation of Under- and Supersaturation of Gallium Vacancies in Gallium Arsenide During Silicon in- and Outdiffusion
C.-H. Chen
U. Gösele
T. Y. Tan
OriginalPaper 15 October 1997 Pages: 99 - 104
Fermi-Level Effect on Group III Atom Interdiffusion in III-V Compounds: Bandgap Heterogeneity and Low Silicon-Doping
C.-H. Chen
U. Gösele
T. Y. Tan
OriginalPaper 15 October 1997 Pages: 105 - 110
Modeling of the Surface Annihilation of Excess Self-Interstitials Generated by Gold Diffusion into Silicon
N. A. Stolwijk
W. Lerch
A. Giese
OriginalPaper 15 October 1997 Pages: 111 - 116
Gold Diffusion in Silicon During Gettering by an Aluminum Layer
Subhash M. Joshi
Ulrich M. Gösele
Teh Y. Tan
OriginalPaper 15 October 1997 Pages: 117 - 122
Defect Reactions Induced by Reactive Ion Etching
Song Zhao
Lionel C. Kimerling
OriginalPaper 15 October 1997 Pages: 123 - 128
Influence of RTP on Vacancy Concentrations
M. Jacob
P. Pichler
R. Falster
OriginalPaper 15 October 1997 Pages: 129 - 134
Computer Simulation of Thermomigration Process
V. Yu. Gershanov
S. I. Garmashov
A. V. Beletskaya
OriginalPaper 15 October 1997 Pages: 135 - 140
Chemical Kinetics Models for Semiconductor Processing
Michael E. Coltrin
Ellen Meeks
J. Randall Creighton
OriginalPaper 15 October 1997 Pages: 143 - 154
Robust Reaction-Transport Models of MOVPE Reactors
C. Theodoropoulos
H. K. Moffat
T. J. Mountziaris
OriginalPaper 15 October 1997 Pages: 155 - 160
Optimal Design of Stagnation-Flow MOVPE Reactors with Axisymmetric Multi-Aperture Inlets
V. Gupta
C. Theodoropoulos
T. J. Mountziaris
OriginalPaper 15 October 1997 Pages: 161 - 166
A Theoretical Study on the Fundamental Chemical Reactions in Titanium Plasma-Enhanced CVD
K. Tsuda
K. Watanabe
T. Takada
OriginalPaper 15 October 1997 Pages: 167 - 172
Use of Rigorous Three-Dimensional Electromagnetic Simulation to Evaluate the Effectiveness of Optical Proximity Correction for Nonplanar Lithography
M. S. Yeung
E. Barouch
OriginalPaper 15 October 1997 Pages: 173 - 179
Modelling Analysis of Oxygen Transport During Czochralski Growth of Silicon Crystals
Yu. E. Egorov
Yu. N. Makarov
A. I. Zhmakin
OriginalPaper 15 October 1997 Pages: 181 - 186
Towards the Optimization of AMT Barrel Reactors for Silicon Epitaxy
M. Masi
G. Radaelli
D. Crippa
OriginalPaper 15 October 1997 Pages: 187 - 192
Finite Element Analysis of a MOCVD Reactor Having a Close-Spaced Injector
Yang Ren Sun
David W. Weyburne
Qing S. Paduano
OriginalPaper 15 October 1997 Pages: 193 - 198
The Roles of “3d/2d” and “3d/3d” Topography Simulators in Virtual Wafer Fabs
T. S. Cale
T. P. Merchant
L. J. Borucki
OriginalPaper 15 October 1997 Pages: 201 - 212
An Atomic-Scale Derived Continuous Approach for the Anisotropic Etching
N. Moldovan
S. Nedelcu
H. Camon
OriginalPaper 15 October 1997 Pages: 213 - 218
Modeling of Grain Structure Evolution and its Impact on the Reliability of Al(Cu) Thin Film Interconnects
S. P. Riege
V. Andleigh
H. J. Frost
OriginalPaper 15 October 1997 Pages: 219 - 224
Simulation Study of IBE Process for III-V Compounds in Mesa and Trenches
L. Houlet
A. Rhallabi
G. Turban
OriginalPaper 15 October 1997 Pages: 225 - 230
Effects of Compositional Segregation and Short Channel on Threshold Voltage of nMOSFET
Julie Y. H. Lee
Tom C. H. Lee
Robert Tucker
OriginalPaper 15 October 1997 Pages: 233 - 238
Modeling and 2D Numerical Simulation of Transient Phenomena in Floating Body SOI MOSFETS
A. M. Ionescu
F. Chaudier
A. Chovet
OriginalPaper 15 October 1997 Pages: 239 - 244
Demonstration of Improved Quantitative Mobility Spectrum Analysis (i-QMSA)
I. Vurgaftman
J. R. Meyer
J. R. Lindemuth
OriginalPaper 15 October 1997 Pages: 245 - 250
Charge Transfer Modeling for Charge-Coupled Devices
James P. Lavine
Eric G. Stevens
David J. Schneider
OriginalPaper 15 October 1997 Pages: 251 - 256
Light-Controlled Switching Transients in Mis Silicon Structures with Multichannel Insulator: Physical Processes and New Device Modelling
A. Malik
R. Martins
OriginalPaper 15 October 1997 Pages: 257 - 262
Theoretical Modeling and Improved Thermoelectric Properties in (111) and (001) Oriented PbTe/Pb_1-xEu_xTe MQWs
T. Koga
S. B. Cronin
M. S. Dresselhaus
OriginalPaper 15 October 1997 Pages: 263 - 268

Volume 490, Issue 1

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