Volume 483, Issue 1

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December 1997

Symposium E — Power Semiconductor Materials & Devices

Issue Editors:

S.J. Pearton,
F. Ren,
R.J. Shul,
S. Tenconi,
E. Wolfgang

60 articles in this issue

Applications of High Power Electronic Switches in the Electric Power Utility Industry and the Needs for High Power Switching Devices
G. T. Heydt
B. J. Skromme
OriginalPaper 15 August 1997 Pages: 3 - 13
GaN and Related Materials for High Power Applications
M. S. Shur
OriginalPaper 15 August 1997 Pages: 15 - 26
4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures
J. B. Casady
A. K. Agarwal
C. D. Brandt
OriginalPaper 15 August 1997 Pages: 27 - 38
Thermo-Mechanical Simulation of a Multichip Press-Packed IGBT
A. Pirondi
G. Nicoletto
P. E. Zani
OriginalPaper 15 August 1997 Pages: 39 - 44
Localized Lifetime Control in Silicon Bipolar Power Devices by Voids Induced by He Ion Implantation
M. Saggio
V. Raineri
E. Rimini
OriginalPaper 15 August 1997 Pages: 45 - 50
Development of Diamond Based Power Microelectronics
J. L. Davidson
W. P. Kang
M. Howell
OriginalPaper 15 August 1997 Pages: 53 - 61
Thin Film Diamond Field Effect Transistors for High Power Applications
Hui Jin Looi
Lisa Ys Pang
Richard B. Jackman
OriginalPaper 15 August 1997 Pages: 63 - 68
Heat Spreader Characteristics of Multilayer Diamond Films for High Frequency Power Devices
B. Ramaswami
K. Jagannadham
OriginalPaper 15 August 1997 Pages: 69 - 74
Power Limitation Due to Premature Breakdown in Algan/Gan Hfets
G. Gradinaru
N. C. Kao
T. S. Sudarshan
OriginalPaper 15 August 1997 Pages: 77 - 82
Junction Field Effect Transistors for High-Temperature or High-Power Electronics
J. C. Zolper
OriginalPaper 15 August 1997 Pages: 83 - 87
Wide Bandgap Semiconductor Power Devices
T. P. Chow
N. Ramungul
M. Ghezzo
OriginalPaper 15 August 1997 Pages: 89 - 102
Comparison of Dry-Etch Techniques for GaN, InN, and AlN
R. J. Shul
G. A. Vawter
C. R. Abernathy
OriginalPaper 15 August 1997 Pages: 103 - 109
Silicon Carbide and Gallium Nitride Rf Power Devices
C. E. Weitzel
K. E. Moore
OriginalPaper 15 August 1997 Pages: 111 - 120
A Technique for Rapid Thick Film SiC Epitaxial Growth
I. Khlebnikov
T. S. Sudarshan
M. A. Capano
OriginalPaper 15 August 1997 Pages: 123 - 127
SiC Epitaxial Growth on Carbon
I. Khlebnikov
V. Madangarli
T. S. Sudarshan
OriginalPaper 15 August 1997 Pages: 129 - 133
Formation Mechanism of Negative Fixed Charge in Glass at Lead Glass/Silicon Interface
Susumu Murakami
Hitoshi Matsuzaki
Minoru Kanno
OriginalPaper 15 August 1997 Pages: 135 - 140
Covalent Silicon Bonding at Room Temperature in Ultrahigh Vacuum
Andreas Plößl
Heinz Stenzel
Ulrich GÖsele
OriginalPaper 15 August 1997 Pages: 141 - 146
Low-Temperature PECVD SiO₂ on Si and SiC
L. Teng
W. A. Anderson
OriginalPaper 15 August 1997 Pages: 147 - 153
Selective Etching of Wide Bandgap Nitrides
R. J. Shul
C. G. Willison
S. M. Donovan
OriginalPaper 15 August 1997 Pages: 155 - 161
Etching and Hydrogen Incorporation in ScAlMgO₄
C. D. Brandlel
F. Ren
J. M. Zavada
OriginalPaper 15 August 1997 Pages: 163 - 168
Hydrogen Passivation of Er-Doped AlN
S. J. Pearton
C. R. Abernathy
R. N. Schwartz
OriginalPaper 15 August 1997 Pages: 169 - 175
ICP Etching of SiC
J. J. Wang
E. S. Lambers
F. Ren
OriginalPaper 15 August 1997 Pages: 177 - 183
Residual Oxygen Determination in Silicon Epilayer, Comparison with FTIR Measurements
F. Degas
G. Blondiaux
B. Pichaud
OriginalPaper 15 August 1997 Pages: 185 - 190
In-Situ Monitoring of Etch by-Products During Reactive Ion Beam Etching of Gaas in Chlorine/Argon
J. W. Lee
S. J. Pearton
C. G. Willison
OriginalPaper 15 August 1997 Pages: 191 - 196
Understanding the Role of Defects in Limiting the Minority Carrier Lifetime in SiC
W. A. Doolittle
A. Rohatgi
R. H. Hopkins
OriginalPaper 15 August 1997 Pages: 197 - 202
Optical Characterization of Silicon Oxycarbide Thin Films
D. M. Wolfe
F. Wang
G. Lucovsky
OriginalPaper 15 August 1997 Pages: 203 - 208
Heteroepitaxy and High Density Nucleation of Diamond on Mirror-Polished Silicon
Zhangda Lin
Xiaosong Sun
S. T. Lee
OriginalPaper 15 August 1997 Pages: 209 - 212
Achievement of Coalesced Oriented Diamond Films on Nickel by Optical Process Control and Methane Enrichment
P. C. Yang
C. A. Wolden
Z. Sitar
OriginalPaper 15 August 1997 Pages: 213 - 218
Influence of Open-Tube Ga Diffusion on the Characteristics for Thyristor
Wen Ruimei
Pei Suhua
OriginalPaper 15 August 1997 Pages: 219 - 222
Theoretical Model and Computer Simulation Results of Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide
G. V. Gadiyak
OriginalPaper 15 August 1997 Pages: 223 - 227
Metallization Of Thin Graphite Layers After Cs Deposition On 4H-Sic(0001) Surfaces
H. Nienhaus
V. Van Elsbergen
OriginalPaper 15 August 1997 Pages: 229 - 234
PLD Epitaxial Tin Contacts to 6H-SiC and GaN
V. Talyansky
R. D. Vispute
R. A. Lareau
OriginalPaper 15 August 1997 Pages: 235 - 239
Microraman Characterization of Microdefects in Bulk SiC
E. MartÍn
M. Chafai
J. JimÉnez
OriginalPaper 15 August 1997 Pages: 241 - 246
Growth Control and Characterization of Wide Band Gap Silicon-Carbon Films
S. Kerdiles
R. Rizk
J.R. Morante
OriginalPaper 15 August 1997 Pages: 247 - 252
PLD Epitaxial Tin and Pt Ohmic Metallizations to P-Type 6H-SiC Using Focused Ion Beam Surface Modification
A. A. Iliadis
S. N. Andronescu
K. A. Jones
OriginalPaper 15 August 1997 Pages: 253 - 258
Surface and Interface Study of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425°C
Liang-Yu Chen
Gary W. Hunter
Dak Knight
OriginalPaper 15 August 1997 Pages: 259 - 264
Wet Chemical Etching Survey of III-Nitrides
Hyun Cho
D. C. Hays
J. C. Zolper
OriginalPaper 15 August 1997 Pages: 265 - 270
A Novel Bi-Layer Photoresist T-Gate Technique to Reduce Gate Resistance
J. R. Lothian
F. Ren
OriginalPaper 15 August 1997 Pages: 271 - 275
Single Crystal Silicon Carbide on Silicon Using a Supersonic Gas Jet of Methylsilane
S. A. Ustin
C. Long
W. Ho
OriginalPaper 15 August 1997 Pages: 279 - 284
Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P⁺N Junction Rectifiers
P. G. Neudeck
W. Huang
M. Dudley
OriginalPaper 15 August 1997 Pages: 285 - 294
The Structural Evolution of Lely Seeds During the Initial Stages of SiC Sublimation Growth
V. D. Heydemann
E. K. Sanchez
M. Skowronski
OriginalPaper 15 August 1997 Pages: 295 - 300
Bulk Growth of Silicon Carbide Crystals: Analysis of Growth Rate and Crystal Quality
D. Hofmann
R. Eckstein
A. Winnacker
OriginalPaper 15 August 1997 Pages: 301 - 306
Epitaxial Growth of High Quality SiC by Sublimation Close Space Technique
S. Nishino
T. Yoshida
Y. Nishio
OriginalPaper 15 August 1997 Pages: 307 - 312
High Frequency Capacitance Measurements on Metal-Insulator-Semiconductor Structures in Thermal Non-Equilibrium Condition
M. Sadeghi
A. Jauhiainen
O. Engström
OriginalPaper 15 August 1997 Pages: 315 - 320
High Temperature Characterization Of Ni, W And Al Contacts To 3C-Silicon Carbide Thin Films
C. Jacob
P. Pirouz
M. Mehregany
OriginalPaper 15 August 1997 Pages: 321 - 326
Cl₂-Based Dry Etching of the AlGaInN System in Inductively Coupled Plasmas
Hyun Cho
C. B. Vartuli
J. Han
OriginalPaper 15 August 1997 Pages: 327 - 332
Introduction of Ions into Wide Band Gap Semiconductors
H. Paul Maruska
Mike Lioubtchenko
Randy J. Shult
OriginalPaper 15 August 1997 Pages: 333 - 344
A Novel Technique for RTP Annealing of Compound Semiconductors
M. Fu
V. Sarvepalli
J. A. Sekhar
OriginalPaper 15 August 1997 Pages: 345 - 353
Optimization of Technology and Design Parameters of IGBT Using TWB
B. Fatemizadeh
Y. Granik
OriginalPaper 15 August 1997 Pages: 357 - 362
A Fast and Efficient Simulation Tool for the Voltage Handling Capability of High Voltage Devices
E. Stefanov
G. Charitat
Ph. Spiesser
OriginalPaper 15 August 1997 Pages: 363 - 368

Volume 483, Issue 1

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