1. Megasonic Irradiation Induced Chemical Reaction in the Solution for Silicon Wafer Cleaning

   • T. Ohmi
   • M. Toda
   • H. Morita

   OriginalPaper 10 February 2011 Pages: 3 - 14

2. Practical considerations in Megasonic Wafer Cleaning

   • R. Mark Hall
   • Taura Jarvis
   • Thad Parry

   OriginalPaper 10 February 2011 Pages: 15 - 20

3. Particulate Removal from Silicon Substrates in Megasonic-Assisted Dilute SC1 Chemistry

   • Ismail Kashkoush
   • Eric Brause
   • Rich Novak

   OriginalPaper 10 February 2011 Pages: 21 - 26

4. SI₃N₄ Particle Removal Efficiency Study

   • Jane Qian Liu
   • Carolyn Lee
   • Gregg S. Higashi

   OriginalPaper 10 February 2011 Pages: 27 - 32

5. Advanced Alkali Cleaning Solution for Simplification of Semiconductor Cleaning Process

   • Hitoshi Morinaga
   • Masumi Aoki
   • Minoru Toyoda

   OriginalPaper 10 February 2011 Pages: 35 - 46

6. The Role of HO₂⁻ in SC-1 Cleaning Solutions

   • Steven Verhaverbeke
   • Jennifer W. Parker
   • Chris F. McConnell

   OriginalPaper 10 February 2011 Pages: 47 - 56

7. The Adsorption-Desorption of Cations at the Silica-Water Interface and its Implication in Wafer-Cleaning Efficacy

   • W. Lee
   • K. J. Torek
   • L. Weston

   OriginalPaper 10 February 2011 Pages: 57 - 62

8. In-homogeneous precipitation of Iron from SC1 Solutions

   • D. Martin Knotter
   • Stefan de Gendt
   • Marc M. Heyns

   OriginalPaper 10 February 2011 Pages: 63 - 68

9. Surface Treatment with UV-Excited Radicals for Highly-Reliable Gate Dielectrics

   • Takashi Ito
   • Rinji Sugino
   • Kanetake Takasaki

   OriginalPaper 10 February 2011 Pages: 71 - 80

10. Impact of Metal Contamination of 7.0nm Gate Oxides on Various Substrate Materials

    • S. Saito
    • K. Hamada
    • J. M. Poate

    OriginalPaper 10 February 2011 Pages: 81 - 88

11. Effect of Cl in Gate Oxidation

    • P. W. Mertens
    • M. J. McGeary
    • M. M. Heyns

    OriginalPaper 10 February 2011 Pages: 89 - 100

12. Organic Contamination of Silicon Wafer in Clean Room Air and its Impact to Gate Oxide Integrity

    • D. Imafuku
    • W. Mizubayashi
    • S. Kobayashi

    OriginalPaper 10 February 2011 Pages: 101 - 105

13. The Integration of Interlayer Dielectric Deposition and Chemical Mechanical Polishing

    • Anda McAfee
    • Daniel A. Koos
    • Robert Hiatt

    OriginalPaper 10 February 2011 Pages: 109 - 114

14. Use of Malonic Acid in Chemical-Mechanical Polishing (CMP) of Tungsten

    • L. Zhang
    • S. Raghavan

    OriginalPaper 10 February 2011 Pages: 115 - 123

15. Surface Characteristics, Etching Behaviors and Chemicalmechanical Polishing of Aluminum Alloy thin Films

    • Wei-Tsu Tseng
    • Jun Wu
    • Yee-Shyi Chang

    OriginalPaper 10 February 2011 Pages: 125 - 130

16. Planarization of Gratings using Magnetorheological Finishing

    • Fuqian Yang
    • D. Golini
    • S. D. Jacobs

    OriginalPaper 10 February 2011 Pages: 131 - 136

17. Chemical Mechanical Cleaning for Post-CMP Applications: Defects and Metals Results

    • E. Y. Zhao
    • R. Emami
    • D. J. Hymes

    OriginalPaper 10 February 2011 Pages: 137 - 142

18. ‘Back end’ Chemical Cleaning in Integrated Circuit Fabrication: A Tutorial

    • Yaw S. Obeng
    • R. S. Raghavan

    OriginalPaper 10 February 2011 Pages: 145 - 157

19. Post Metal Etch Treatment for Submicron Applications

    • Simon Gonzales
    • Gordy Grivna
    • Anda McAfee

    OriginalPaper 10 February 2011 Pages: 159 - 165

20. Etching Characteristics During Cleaning of Silicon Surfaces by NF₃-added Hydrogen and Water-Vapor Plasma Downstream Treatment

    • Miki T. Suzuki
    • Jun Kikuchi
    • Shuzo Fujimura

    OriginalPaper 10 February 2011 Pages: 167 - 171

21. Photoresist Stripping using Ozone/Deionized Water Chemistry

    • I. Kashkoush
    • R. Matthews
    • B. Rajaram

    OriginalPaper 10 February 2011 Pages: 173 - 178

22. Hot Water Etching of Silicon Surfaces: New Insights of Mechanistic understanding and Implications to Device Fabrication

    • J. M. Rosamilia
    • T. Boone
    • Q. Liu

    OriginalPaper 10 February 2011 Pages: 181 - 190

23. Low pH Chemical Etch Route for Smooth H-Terminated Si(100) and Study of Subsequent Chemical Stability

    • B. J. Hinds
    • D. E. Aspnes
    • G. Lucovsky

    OriginalPaper 10 February 2011 Pages: 191 - 196

24. Influence of BHF Treatments on Hydrogen-Terminated Si(100) Surfaces

    • T. Osada
    • Y. Kawazawa
    • M. Hirose

    OriginalPaper 10 February 2011 Pages: 197 - 202

25. Minimization of Interfacial Microroughness for 13–0600 Å Ultrathin Gate Oxides

    • J. Sapjeta
    • T. Boone
    • B. E. Weir

    OriginalPaper 10 February 2011 Pages: 203 - 208

26. Mirror-Polishing Residual Damage characterization in the Subsurface of Si Wafers Using N₂ Laser /mm-Wave Photoconductivity Amplitude Technique

    • Y. Ogita
    • Y. Hosoda
    • M. Miyazaki

    OriginalPaper 10 February 2011 Pages: 209 - 214

27. Effect of Ultra-Dilute RCA Cleans on the Integrity of Thin Gate Oxides

    • Tushar Dhayagude
    • Weidong Chen
    • Mike Olesen

    OriginalPaper 10 February 2011 Pages: 217 - 223

28. RCA and IMEC/SC2 Clean: Metallic Immunity and Gate Oxide Integrity

    • Weidong Chen
    • Tushar Dhayagude
    • Marc Meuris

    OriginalPaper 10 February 2011 Pages: 225 - 232

29. Effects of Wafer Cleaning Reduction on Metals Removal and Ultrathin Gate Oxide Quality

    • Christopher P. D’Emic
    • Stephan Cohen
    • Mary Ann Zaitz

    OriginalPaper 10 February 2011 Pages: 233 - 239

30. Study On the Effect of Silicon Surface Cleaning Processes on Gate Oxide Integrity

    • A. Corradi
    • E. Borzoni
    • G. Borionetti

    OriginalPaper 10 February 2011 Pages: 241 - 246

31. Investigation of the Need for Alternative Cleaning Chemistries for 30Å Gate Oxides

    • Amr Bayoumi
    • Alice Fischer-Colbrie
    • Wayne Greene

    OriginalPaper 10 February 2011 Pages: 247 - 252

32. Comparison of Removal Efficiency of Cu Impurity on Si(100) Depending on the Cleaning Splits of (UV/O₃ + HF) and (H₂O₂ + HF)

    • Hyeongtag Jeon
    • Baikil Choi

    OriginalPaper 10 February 2011 Pages: 253 - 258

33. Study on Cu Cleaning Efficacy Depending on Initial Contamination Method

    • J. S. Kim
    • H. Morita
    • T. Ohmi

    OriginalPaper 10 February 2011 Pages: 259 - 265

34. SPFM Pre-Cleaning for Formation of Silicon Interfaces by Wafer Bonding

    • Stefan Bengtsson
    • Karin Ljungberg

    OriginalPaper 10 February 2011 Pages: 267 - 271

35. The Effect of Contamination Solutions and Substrate Conditions on Copper Particle Growth Behavior

    • Geun-Min Choi
    • Katsuyuki Sekijne
    • Tadahiro Ohmi

    OriginalPaper 10 February 2011 Pages: 275 - 280

36. Comparison and Reproducibility of H-Passivation of Si(100) with HF in Methanol, Ethanol, Isopropanol and Water by IBA, TMAFM, and FTIR

    • V. Atluri
    • N. Herbots
    • B. Fowler

    OriginalPaper 10 February 2011 Pages: 281 - 292

37. Electrical Characterization of Ultra-Thin Oxides Grown on Silicon Surfaces Cleaned in Ultra-High Vacuum

    • C. L. Petersen
    • F. Grey

    OriginalPaper 10 February 2011 Pages: 293 - 298

38. Preparation of PIT-Free Hydrogen-Terminated Si(111) in Deoxygenated Ammonium Fluoride

    • Christopher P. Wade
    • Christopher E. D. Chidsey

    OriginalPaper 10 February 2011 Pages: 299 - 304

39. Understanding the Correlation of SurfaceSIMS and TXRF Measurements of Surface Metal Contamination on Silicon Wafers

    • Stephen P. Smith
    • Jenny Metz

    OriginalPaper 10 February 2011 Pages: 305 - 310

40. In-Situ Chemical Concentration control for Wafer Wet Cleaning

    • Ismail Kashkoush
    • Eric Brause
    • Robert Grant

    OriginalPaper 10 February 2011 Pages: 311 - 316

41. A Novel Surface Preparation and Post-Etch Removal Technique for InGaAs Sidewalls

    • S. A. Tabatabaei
    • G. A. Porkolab
    • D. R. Stone

    OriginalPaper 10 February 2011 Pages: 317 - 321

42. Analysis of Organic Contamination in Gases using Non-Volatile Residue (NVR) Monitors and Time-of-Flight Secondary Ion Mass Spectrometry (Tof-Sims)

    • G. S. Strossman
    • P. M. Lindley
    • W. D. Bowers

    OriginalPaper 10 February 2011 Pages: 323 - 328

43. Lifetime Characterization of Poly-Silicon Back Sealed Wafers with Bi-Surface Photoconductivity Decay Method

    • Y. Ogita
    • Y. Uematsu
    • H. Daio

    OriginalPaper 10 February 2011 Pages: 329 - 334

44. Growth Chemistry of Ultrathin Silicon Nitride and Oxynitride Passivation Layers on Si(100)

    • A. Kamath
    • B. Y. Kim
    • D. L. Kwong

    OriginalPaper 10 February 2011 Pages: 335 - 340

45. Oxidation Resistance of Ultrathin Silicon Nitride Passivation Layers on Si(100)

    • A. Kamath
    • B. Y. Kim
    • D. L. Kwong

    OriginalPaper 10 February 2011 Pages: 341 - 346

46. Accurate Depth Profiling of Ultra-Thin Oxide Films by Secondary Ion Mass Spectrometry

    • Stephen P. Smith
    • Ming Hong Yang
    • Victor K. F. Chia

    OriginalPaper 10 February 2011 Pages: 347 - 352

47. An Analysis of Infrared Spectroscopic Geometries

    • Gregory T. Merklin
    • Huihong Luo
    • Christopher E. D. Chidsey

    OriginalPaper 10 February 2011 Pages: 353 - 358

48. Comparison of High-Purity-Ozone Oxidation on Si(111) and Si(100)

    • A. Kurokawa
    • S. Ichimura
    • D. W. Moon

    OriginalPaper 10 February 2011 Pages: 359 - 364

49. Effect of Sheet Electron-Beam Irradiation (SEBI) on Water Wettability of Mirror-Finished Si Wafer

    • K. Mori
    • T. Okada
    • Y. Nishi

    OriginalPaper 10 February 2011 Pages: 365 - 370

50. Cleaning Process Optimization in a Gate Oxide Cluster Tool Using an in-Line XPS Module

    • Barbara Froeschle
    • Frédérique Glowacki
    • Claus Schneider

    OriginalPaper 10 February 2011 Pages: 371 - 377