Volume 473, Issue 1

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December 1997

Symposium J — Materials Reliability in Microelectronics VII

Issue Editors:

J.J. Clement,
R.R. Keller,
K.S. Krisch,
J.D. Sanchez,
Z. Suo

62 articles in this issue

Adhesion Measurement of Interfaces in Multilayer Interconnect Structures
Qing Ma
John Bumgarner
Reinhold H. Dauskardt
OriginalPaper 15 May 1997 Pages: 3 - 14
The Energy Release Rate for Decohesion in Thin Multilayered Films on Substrates
Ming. Y. He
Guanghai Xu
H. Fujimoto
OriginalPaper 15 May 1997 Pages: 15 - 20
Progressive Debonding of Multilayer Interconnect Structures
Michael Lane
Robert Ware
Reinhold H. Dauskardt
OriginalPaper 15 May 1997 Pages: 21 - 26
Micromechanics Measurements Applied to Integrated Circuit Microelectronics
David R. Clarke
OriginalPaper 15 May 1997 Pages: 27 - 38
Adhesion Assessment of Copper Thin Films
M. D. Kriese
N. R. Moody
W. W. Gerberich
OriginalPaper 15 May 1997 Pages: 39 - 49
Effects of Adhesion on the Measurement of Thin Film Mechanical Properties by Nanoindentation
T. Y. Tsui
C. A. Ross
G. M. Pharr
OriginalPaper 15 May 1997 Pages: 51 - 56
Nanoindentation Hardness of Soft Films on Hard Substrates: Effects of the Substrate
T. Y. Tsui
C. A. Ross
G. M. Pharr
OriginalPaper 15 May 1997 Pages: 57 - 62
Electrostatic Adhesion Testing for the Evaluation of Metallization Adhesion
H. S. Yang
F. R. Brotzen
C. F. Dunn
OriginalPaper 15 May 1997 Pages: 63 - 68
Effects of Local Interfacial Debonding on the Stress Evolution in Aluminum Interconnects
Y. -L. Shen
OriginalPaper 15 May 1997 Pages: 69 - 74
Performance and Reliability of Scaled Gate Dielectrics
W. M. Paulson
P. J. Tobin
S. G. H. Anderson
OriginalPaper 15 May 1997 Pages: 77 - 88
Synthesis of Ultra-thin stacked oxides using low pressure single furnace cluster process
P. K. Roy
D. Brady
K. Morse
OriginalPaper 15 May 1997 Pages: 89 - 94
In-Situ Stress Measurements During Dry Oxidation of Silicon
Chia-Liang Yu
Paul A. Flinn
John C. Bravman
OriginalPaper 15 May 1997 Pages: 95 - 100
Influence of Boron Diffusion on Ultra-Thin Oxides
T. Nigam
M. Depas
L. Mapeldoram
OriginalPaper 15 May 1997 Pages: 101 - 106
Impact of Electrodes on Gate Oxide Reliability: Examples from Isolation and Gate-Stack Processing
D. L. Chapek
K. F. Schuegraf
R. P. S. Thakur
OriginalPaper 15 May 1997 Pages: 107 - 116
Chemical Bonding and Si-SiO₂ Interface Reliability: (A) Minimization of Suboxide Transition Regions, and (B) Monolayer Incorporation of Nitrogen
G. Lucovsky
OriginalPaper 15 May 1997 Pages: 117 - 122
Dependence of Reliability of Ultrathin Mos Gate Oxides on the Fermi Level Positions at Gate and Substrate
Tien-Chun Yang
Navakanta Bhat
Krishna C. Saraswat
OriginalPaper 15 May 1997 Pages: 123 - 128
Surface Treatment with UV-Excited Radicals for Highly-Reliable Gate Dielectrics
Takashi Ito
Rinji Sugino
Kanetake Takasaki
OriginalPaper 15 May 1997 Pages: 131 - 140
Impact of Metal Contamination of 7.0nm Gate Oxides on Various Substrate Materials
S. Saito
K. Hamada
J. M. Poate
OriginalPaper 15 May 1997 Pages: 141 - 148
Effect of Cl in Gate Oxidation
P. W. Mertens
M. J. McGeary
M. M. Heyns
OriginalPaper 15 May 1997 Pages: 149 - 160
Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity
D. Imafuku
W. Mizubayashi
S. Kobayashi
OriginalPaper 15 May 1997 Pages: 161 - 165
Replacement of C-V Monitoring with Noncontact Cos Charge Analysis
K. B. Catmull
R. G. Cosway
G. S. Homer
OriginalPaper 15 May 1997 Pages: 167 - 172
The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior
Heng-Chih Lin
Edwin C. Kan
C. R. Helms
OriginalPaper 15 May 1997 Pages: 175 - 180
Identification of the Microscopic Structure of New Hot Carrier Damage Centers in Short Channel Mosfets
C. A. Billman
P. M. Lenahan
W. Weber
OriginalPaper 15 May 1997 Pages: 181 - 184
Space Charge Analysis in Thin SiO₂ Films: Local Vs. Uniform Degradation Models
A. E. Kotov
OriginalPaper 15 May 1997 Pages: 185 - 190
Effect of Channel Profile Engineering on Hot Carrier Reliability in nMOSFETs with 100 nm Channel Lengths
Samar K. Saha
OriginalPaper 15 May 1997 Pages: 191 - 196
Stress-Recovery Transients in Ultra Thin Oxides on Silicon
Per Lundgren
Anders Jauhiainen
Lars-Åke Ragnarsson
OriginalPaper 15 May 1997 Pages: 197 - 202
Characterization of Hole Traps Generated by Electron Injection in Thin SiO₂ Films
Tomasz Brożek
Eric B. Lum
Chand R. Viswanathan
OriginalPaper 15 May 1997 Pages: 203 - 208
Electromigration and 1/ƒ Noise in Single-Crystalline, Bamboo and Polycrystalline Al Lines
Marc J.C. Van Den Homberg
P.F.A. Alkemade
S. Radelaar
OriginalPaper 15 May 1997 Pages: 211 - 216
The Microstructure and Electromigration Performance of Damascene-Fabricated Aluminum Interconnects
Paul R. Besser
John E. Sanchez
Kashmir Sahota
OriginalPaper 15 May 1997 Pages: 217 - 222
An Examination of Mass Transport Paths in Conventional and Highly Textured Al-Cu Interconnect Lines
R. J. Gleixner
H. Kanekot
W. D. Nix
OriginalPaper 15 May 1997 Pages: 223 - 228
Void Elongation Phenomena Observed in Polycrystalline Cu Interconnects at a High Current Density Stressing Conditions
S. Shingubara
S. Kajiwara
T. Takahagi
OriginalPaper 15 May 1997 Pages: 229 - 234
Observation of Electromigration Voiding in Cu Lines
Seok-Hee Lee
John C. Bravman
Lucile Arnaud
OriginalPaper 15 May 1997 Pages: 235 - 239
Compositional Effects on the Degradation of PVD-Tisin
W. F. McArthur
F. Deng
K. L. Kavanagh
OriginalPaper 15 May 1997 Pages: 241 - 246
Effects of Nitrogen on Preventing the Crystallization of Amorphous Ta-Si-N Diffusion Barrier
Dong Joon Kim
Soon Pil Jeon
Jong-Wan Park
OriginalPaper 15 May 1997 Pages: 247 - 252
Electromigration in Short Al Lines Studied by High-Resolution Resistance Measurement
A. H. Verbruggen
M. J. C. Van Den Homberg
S. Radelaar
OriginalPaper 15 May 1997 Pages: 255 - 266
Kinetics of Cu Segregation in Al-Cu(1at% Cu) Interconnects Studied by Resistance Measurements
A. J. Kalkman
A. H. Verbruggen
S. Radelaar
OriginalPaper 15 May 1997 Pages: 267 - 272
Thermal and Electromigration Strain Distributions in 10 μm-Wide Aluminum Conductor Lines Measured by X-Ray Microdiffraction
P.-C. Wang
G. S. Cargill III
K. Y. Lee
OriginalPaper 15 May 1997 Pages: 273 - 278
Thermal Conductivity Measurements of Interlevel Dielectrics
Elizabeth B. Varner
Thomas Marieb
Kenneth E. Goodson
OriginalPaper 15 May 1997 Pages: 279 - 284
Scanning Stiffness Microscopy - A Novel Technique for Detecting Sub-Surface Cracks
Ranjana Saha
Ting Y. Tsui
William D. Nix
OriginalPaper 15 May 1997 Pages: 285 - 290
Interconnect Limits on Gigascale Integration (GSI)
J. A. Davis
J. D. Meindl
OriginalPaper 15 May 1997 Pages: 293 - 304
Modeling Stress Evolution in Electromigration
M. D. Thouless
OriginalPaper 15 May 1997 Pages: 305 - 315
Modeling the Mechanisms of Cu-Enhanced Median Time to Failure in Al-Cu Interconnects Under Electromigration
K. S. Low
W. C. Shih
A. G. O’Neill
OriginalPaper 15 May 1997 Pages: 317 - 322
Simulation of the Effect of Dielectric Air Gaps on Interconnect Reliability
L. C. Bassman
R. P. Vinci
M. D. Deal
OriginalPaper 15 May 1997 Pages: 323 - 328
Three-Dimensional Finite Element Simulation of Electro and Stress Migration Effects in Interconnect Lines
Sven Rzepka
Matt A. Korhonen
Che-Yu Li
OriginalPaper 15 May 1997 Pages: 329 - 335
Numerical Simulations of Electromigration and Stress-Driven Diffusion in Polycrystalline Interconnects
G. L. Povirk
OriginalPaper 15 May 1997 Pages: 337 - 342
A Growth Model of Stress Voids in Integrated Circuit Metallization
S. Kordic
E.J.H. Collart
OriginalPaper 15 May 1997 Pages: 343 - 348
Influence of Voed Geometry on Electromigration Failure in Via-Line Structures
B. Miner
T. S. Sriram
S. A. Bill
OriginalPaper 15 May 1997 Pages: 351 - 356
Behaviors of Precipitates, Voids, and Hillocks in Electromigration Stressed Al-2wt%Cu Interconnects
D. E. Grosjean
H. Okabayashi
H. Mori
OriginalPaper 15 May 1997 Pages: 357 - 362
Early Morphological Changes in Al Lines During Current Stressing
H. Schührer
H. Brückl
G. Reiss
OriginalPaper 15 May 1997 Pages: 363 - 367
Relationship Between Structure and Electromigration Characteristics of Pure Aluminum Films
David P. Field
Oleg V. Kononenko
Victor N. Matveev
OriginalPaper 15 May 1997 Pages: 369 - 374

Volume 473, Issue 1

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