Volume 468, Issue 1

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December 1997

Symposium D — Gallium Nitride and Related Materials II

Issue Editors:

C.R. Abernathy,
H. Amano,
J.C. Zolper

75 articles in this issue

Impurity Contamination of GaN Epitaxial Films From the Sapphire, SiC and ZnO Substrates
Galina Popovici
Wook Kim
Hadis Morkoç
OriginalPaper 15 March 1997 Pages: 3 - 6
Reliable, Reproducible and Efficient MOCVD of III-Nitrides in Production Scale Reactors
B. Wachtendorf
R. Beccard
E. Woelk
OriginalPaper 15 March 1997 Pages: 7 - 11
Growth and Characterization of In-Based Nitride Compounds and their Double Heterostructures
V. A. Joshkin
J. C Roberts
S. M. Bedair
OriginalPaper 15 March 1997 Pages: 13 - 21
Movpe Growth and Characterization of Al_xGa_1-xN Layers on Sapphire
S. Clur
O. Briot
M. Renucci
OriginalPaper 15 March 1997 Pages: 23 - 29
Growth of Ternary Silicon Carbon Nitride as a New Wide Band Gap Material
L. C. Chen
C. K. Chen
Y. S. Huang
OriginalPaper 15 March 1997 Pages: 31 - 37
New Precursor Routes to Nanocrystalline Cubic/Hexagonal Gallium Nitride, GaN
R. L. Wells
J. F. Janik
B. D. Steffey
OriginalPaper 15 March 1997 Pages: 39 - 44
Toward Growing III-V Clusters with Metalorganic Precursors
A. Demchuk
J. Porter
B. Koplitz
OriginalPaper 15 March 1997 Pages: 45 - 50
Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In-Situ Cathodoluminescence
J. M. Van Hove
P. P. Chow
C. Polley
OriginalPaper 15 March 1997 Pages: 51 - 56
In_xGa_(1-x)N Alloys as Electronic Materials
O. K. Semchinova
S. E. Alexandrov
D. Uffmann
OriginalPaper 15 March 1997 Pages: 57 - 62
Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor Phase Epitaxy
H. Tsuchiya
K. Sunaba
F. Hasegawa
OriginalPaper 15 March 1997 Pages: 63 - 67
Growth of GaN Thin Films on Sapphire Substrate by Low Pressure MOCVD
M. Ishida
T. Hashimoto
J. Shirafuji
OriginalPaper 15 March 1997 Pages: 69 - 74
MBE-Growth of Strain Engineered GaN Thin Films Utilizing a Surfactant
R. Klockenbrink
Y. Kim
E. R. Weber
OriginalPaper 15 March 1997 Pages: 75 - 80
Quasi-Thermodynamic Analysis of Metalorganic Vapor Phase Epitaxy of GaN
Shukun Duan
Dacheng Lu
OriginalPaper 15 March 1997 Pages: 81 - 86
Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates
M. Okamoto
T. Ogawa
T. Sasaki
OriginalPaper 15 March 1997 Pages: 87 - 92
Pyrolytic Preparation of Gallium Nitride From [Ga(NEt₂)₃]₂ and its Ammonolysis Compound
Seiichi Koyama
Yoshiyuki Sugahara
Kazuyuki Kuroda
OriginalPaper 15 March 1997 Pages: 93 - 98
Pulsed Laser Deposition of Gallium Nitride on Sapphire
V. Talyansky
R. D. Vispute
K. A. Jones
OriginalPaper 15 March 1997 Pages: 99 - 104
Control of Valence States by a Codoping Method in P-Type GaN Materials
T. Yamamoto
H. Katayama-Yoshtoa
OriginalPaper 15 March 1997 Pages: 105 - 110
Structure, Electronic Properties, Defects and Doping of AlN Using a Self-Consistent Molecular Dynamics Method
Petra Stumm
D. A. Drabold
OriginalPaper 15 March 1997 Pages: 111 - 116
Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD
W. Götz
M. D. McCluskey
E. E. Haller
OriginalPaper 15 March 1997 Pages: 117 - 122
Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular Beam Epitaxy
J. D. Mackenzie
C. R. Abernathy
J. M. Zavada
OriginalPaper 15 March 1997 Pages: 123 - 129
Site-Selective Photoluminescence Excitation and Photoluminescence Spectroscopy of Er-Implanted Wurtzite GaN
S. Kim
S. J. Rhee
S. G. Bishop
OriginalPaper 15 March 1997 Pages: 131 - 136
Gallium Nitride Doped with Zinc and Oxygen - The Crystal for the Blue Polarized Light-Emitting Diodes
V. G. Sidorov
A. G. Drezhuk
D. V. Sidorov
OriginalPaper 15 March 1997 Pages: 137 - 139
GaN Crystals Grown from a Liquid Phase at Reduced Pressure
V. A. Ivantsov
V. A. Sukhoveev
V. A. Dmitriev
OriginalPaper 15 March 1997 Pages: 143 - 148
Growth of Bulk, Polycrystalline Gallium and Indium Nitride at Sub-Atmospheric Pressures
John C. Angus
Alberto Argoitia
Kathleen Kash
OriginalPaper 15 March 1997 Pages: 149 - 154
Polar-Twinned Defects in LiGaO₂ Substrates Lattice Matched with GaN
Takao Ishii
Yasuo Tazoh
Shintaro Miyazawa
OriginalPaper 15 March 1997 Pages: 155 - 160
Substrate Effects on the Growth of InN
S. M. Donovan
J. D. MacKenzie
B. Chai
OriginalPaper 15 March 1997 Pages: 161 - 166
Microstructures of GaN Films Grown on a LiGaO₂ New Substrate by Metalorganic Chemical Vapor Deposition
Jing-Hong Li
Olga M. Kryliouk
Kevin S. Jones
OriginalPaper 15 March 1997 Pages: 167 - 172
Dependence of the Residual Strain in GaN on the AlN Buffer Layer Annealing Parameters
Y.-M. Le Vaillant
S. Ciur
J.-Y. Duboz
OriginalPaper 15 March 1997 Pages: 173 - 177
Excitons Bound to Stacking Faults in Wurtzite GaN
Y. T. Rebane
Y. G. Shreter
M. Albrecht
OriginalPaper 15 March 1997 Pages: 179 - 182
Characterization of the Substrate/Film Interface in GaN Films by Image Depth Profiling Secondary Ion Mass Spectrometry (Sims)
Salman Mitha
Robert Clark-Phelps
Hadis Morkoç
OriginalPaper 15 March 1997 Pages: 183 - 186
Initial Stages of MOCVD Growth of Gallium Nitride Using a Multi-Step Growth Approach
J. T. Kobayashi
N. P. Kobayashi
D. H. Rich
OriginalPaper 15 March 1997 Pages: 187 - 191
Plasma Cleaning and Nitridation of Sapphire Substrates for Al_xGa_1-xN Epitaxy as Studied by ARXPS and XPD
M. Seelmann-Eggebert
H. Zimmermann
B. Wachtendorf
OriginalPaper 15 March 1997 Pages: 193 - 198
Mechanical Properties of Gallium Nitride and Related Materials
M. D. Drory
OriginalPaper 15 March 1997 Pages: 201 - 206
Mosaic Structure and Cathodoluminescence of GaN Epilayer Grown by LP-MOVPE
Shukun Duan
Xuegong Teng
Dacheng Lu
OriginalPaper 15 March 1997 Pages: 207 - 211
Resonant Raman Scattering in GaN/Al_0.15 Ga_0.85N and In_yGa_1-yN/GaN/Al_xGa_1-xN Heterostructures
D. Behr
R. Niebuhr
U. Kaufmann
OriginalPaper 15 March 1997 Pages: 213 - 218
Raman Scattering and Photoluminescence of Mg Doped GaN Films Grown by Molecular Beam Epitaxy
G. Popovici
G. Y. Xu
H. Morkoç
OriginalPaper 15 March 1997 Pages: 219 - 224
High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs
H. Siegle
A. R. Goñi
D. Schikora
OriginalPaper 15 March 1997 Pages: 225 - 230
Electron-Phonon Scattering in Very High Electric Fields
B. K. Ridley
OriginalPaper 15 March 1997 Pages: 231 - 235
Optical-Gain Measurements on GaN and Al_x Ga_1-xN Heterostructures
L. Eckey
J. Holst
I. Akasaki
OriginalPaper 15 March 1997 Pages: 237 - 242
Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the <10-10> Direction
A. Andenet
B. Gil
R. L. Aulombard
OriginalPaper 15 March 1997 Pages: 243 - 249
Electronic and Optical Properties of Bulk GaN and GaN/AlGaN Quantum Well Structures
M. Suzuki
T. Uenoyama
OriginalPaper 15 March 1997 Pages: 251 - 262
X-Ray Photoelectron Diffraction Measurements of Hexagonal GaN(0004) Thin Films
R. Denecke
J. Morais
C. S. Fadley
OriginalPaper 15 March 1997 Pages: 263 - 268
A Chemical and Structural Study of the AlN-Si Interface
R. Beye
T. George
OriginalPaper 15 March 1997 Pages: 269 - 274
Measurement of In_xGa_1-xN and Al_xGa_1-xN Compositions by RBS and SIMS
Y. Gao
J. Kirchhoff
R. Clark-Phelps
OriginalPaper 15 March 1997 Pages: 275 - 279
Complete Characterization of Al_xGa_1-xN/In_xGa_1-xN/GaN Devices by Sims
C. Huang
S. Mitha
Y. Gao
OriginalPaper 15 March 1997 Pages: 281 - 285
Tem/Hrem Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire
S. Ruvimov
Z. Liliental-Weber
I. Akasaki
OriginalPaper 15 March 1997 Pages: 287 - 292
Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN
M. Albrecht
S. Christiansen
H. P. Strunk
OriginalPaper 15 March 1997 Pages: 293 - 298
Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum Well Structures
Joachim Krüger
Christian Kisielowski
Eicke R. Weber
OriginalPaper 15 March 1997 Pages: 299 - 304
Characterisation of Al_xGa_1-xN Films Prepared by Plasma Induced Molecular Beam Epitaxy on C-Plane Sapphire
H. Angerer
O. Ambacher
G. Dollinger
OriginalPaper 15 March 1997 Pages: 305 - 310
Influence of Free Charge on the Lattice Parameters of GaN and Other Semiconductors
M. Leszczyński
J. Bak-Misiuk
T. Suski
OriginalPaper 15 March 1997 Pages: 311 - 316

Volume 468, Issue 1

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