Volume 46, Issue 1

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December 1985

Symposium B — Microscopic Identification of Electronic Defects in Semiconductors

Issue Editors:

N.M. Johnson,
S.G. Bishop,
G.D. Watkins

75 articles in this issue

Defect Structure and Properties by Junction Spectroscopy
L. C. Kimerling
J. L. Benton
M. Stavola
OriginalPaper 28 February 2011 Pages: 3 - 12
Microscopic Identification of Defects in Semiconductors by Electron-Spin-Resonance and Related Techniques
Jorgen Schneider
OriginalPaper 28 February 2011 Pages: 13 - 25
Identification of Impurities and Defects in Semiconductors by Optical Spectroscopy
M. S. Skolnick
OriginalPaper 28 February 2011 Pages: 27 - 38
Electronic Defect Characterization
H. G. Grimmeiss
OriginalPaper 28 February 2011 Pages: 39 - 57
The Role of Theory in Defect Physics
M. Schluter
OriginalPaper 28 February 2011 Pages: 61 - 70
Physics of Deep Levels
John D. Dow
OriginalPaper 28 February 2011 Pages: 71 - 81
Thermodynamics of Deep Levels in Semiconductors
J. A. Van Vechten
OriginalPaper 28 February 2011 Pages: 83 - 103
Theoretical Study of Native Defect Complexes in GaAs
P. J. Lin-Chung
Yuan Li
OriginalPaper 28 February 2011 Pages: 105 - 110
Electronic and Magnetic Properties of Interstitial 3d Impurities in Silicon
H. Katayama-Yoshida
Alex Zunger
OriginalPaper 28 February 2011 Pages: 111 - 116
Identification of Chalcogen Defects in Silicon
Franz Beeler
Matthias Scheffler
Olle Gunnarsson
OriginalPaper 28 February 2011 Pages: 117 - 121
The Entropy of Defects and Diffusion in Silicon
Y. Bar-Yam
J. D. Joannopoulos
OriginalPaper 28 February 2011 Pages: 123 - 127
Electronic-Structure Calculation of 3d Transition-Metal Point Defects in Silicon
Franz Beeler
Ole K. Andersen
Matthias Scheffler
OriginalPaper 28 February 2011 Pages: 129 - 135
Semiconductor Alloys: Local Bond Lengths, Mixing Enthalpies, and Microclusters
A. B. Chen
A. Sher
OriginalPaper 28 February 2011 Pages: 137 - 142
Electronic Structure of Mercury, Gold and Platinum Impurities in Silicon
José R. Leite
José L. A. Alves
OriginalPaper 28 February 2011 Pages: 143 - 149
EL2 and Related Defects in GaAs—Challenges and Pitfalls
H. C. Gatos
J. Lagowski
OriginalPaper 28 February 2011 Pages: 153 - 167
The Identification of Lattice Defects in GaAs and AlGaAs
Eicke R. Weber
OriginalPaper 28 February 2011 Pages: 169 - 177
Detailed Analysis of DLTS Signal of EL2 in LEC n-GaAs Crystals
A. Yahata
T. Sato
K. Ishida
OriginalPaper 28 February 2011 Pages: 179 - 184
Microscopic Identification of Anion Antisite Defects in GaAs by Optically Detected Magnetic Resonance
J. Martin Spaeth
Detlev M. Hofmann
Bruno K. Meyer
OriginalPaper 28 February 2011 Pages: 185 - 194
Distant Pair Interactions Involving Antisites in GaAs
B. C. Cavenett
M. Deiri
OriginalPaper 28 February 2011 Pages: 195 - 200
Photo-EPR and Spatially Resolved EPR of As_Ga in As-Grown GaAs
M. Baeumler
U. Kaufmann
J. Windscheif
OriginalPaper 28 February 2011 Pages: 201 - 206
High Resolution Optical Study of the Antisite Defect As_Ga in GaAs; Correlation with Midgap Level EL2
M. Skowronski
D. G. Lin
H. C. Gatos
OriginalPaper 28 February 2011 Pages: 207 - 212
Microscopic Examination of EL2 Associated with Single Dislocations in GaAs
D. J. Stirland
M. R. Brozel
OriginalPaper 28 February 2011 Pages: 213 - 218
Spatial Distribution of Neutral EL2 as Measured Optically for Thin Semi-Insulating GaAs Wafers, and Relevance to Device Parameters
P. Dobrilla
J. S. Blakemore
A. J. McCamant
OriginalPaper 28 February 2011 Pages: 219 - 223
Defect Identification in Silicon Using Electron Nuclear Double Resonance
C. A. J. Ammerlaan
M. Sprenger
D. A. Van Wezep
OriginalPaper 28 February 2011 Pages: 227 - 235
Endor-Investigation of Al⁺⁺ and Al⁺⁺-Al⁻ Pairs in Silicon
J. R. Niklas
J.-M. Spaeth
G. D. Watkins
OriginalPaper 28 February 2011 Pages: 237 - 242
Defect Aggregates in Silicon
James W. Corbett
John C. Corelli
Lawrence C. Snyder
OriginalPaper 28 February 2011 Pages: 243 - 255
The Effect of Uniaxial Stress on the Infrared Absorption Bands Due to the Oxygen Donor in Silicon
M. Stavola
K. M. Lee
L. C. Kimerling
OriginalPaper 28 February 2011 Pages: 257 - 262
Identity of the NL8 EPR Spectrum with Thermal Donors in Silicon
Keon M. Lee
J. M. Trombetta
G. D. Watkins
OriginalPaper 28 February 2011 Pages: 263 - 268
Thermal Donor Removal by Rapid Thermal Annealing: Infrared Absorption
Herman J. Stein
S. K. Hahn
S. C. Shatas
OriginalPaper 28 February 2011 Pages: 269 - 274
Infrared Mapping of Oxygen and Correlation with Electrical Measurements on CZ Grown Wafers
J. Whitfield
R. Boyle
OriginalPaper 28 February 2011 Pages: 275 - 280
Deep Levels Associated with Oxygen Precipitation in CZ Silicon and Correlation with Minority Carrier Lifetimes
S. S. Chan
C. J. Varker
R. W. Carpenter
OriginalPaper 28 February 2011 Pages: 281 - 286
Oxygen-Nitrogen Interactions in Ion-Implanted Silicon
H. J. Stein
OriginalPaper 28 February 2011 Pages: 287 - 290
Scattering of Free Carriers by Oxide Precipitates in Czochralski-Grown Silicon
K. Nauka
W. Walukiewicz
H. C. Gatos
OriginalPaper 28 February 2011 Pages: 291 - 295
Evidence of Lattice Relaxation in Platinum-Doped Silicon
Santos Mayo
J. R. Lowney
M. I. Bell
OriginalPaper 28 February 2011 Pages: 297 - 306
Electron Paramagnetic Resonance of Intrinsic Defects in III–V Semiconductors
N. D. Wilsey
T. A. Kennedy
OriginalPaper 28 February 2011 Pages: 309 - 318
An ODMR Study of the Killer Center Fe in GaP:O
K. M. Lee
L. C. Kimerling
M. D. Sturge
OriginalPaper 28 February 2011 Pages: 319 - 324
Identification of M Centers in InP
J. F. Wager
J. A. Van Vechten
OriginalPaper 28 February 2011 Pages: 325 - 331
Defect States in GaAs after Rapid Thermal Annealing
R. A. Street
N. M. Johnson
R. D. Burnham
OriginalPaper 28 February 2011 Pages: 333 - 338
Characterization of Semiconductors and Semiconducting Superlattices Using High-Resolution Photoluminescence Spectroscopy
D. C. Reynolds
K. K. Bajaj
C. W. Litton
OriginalPaper 28 February 2011 Pages: 339 - 351
Identification of the Double Acceptor States of Some Transition Metal Impurities in GaAs
A. M. Hennel
OriginalPaper 28 February 2011 Pages: 353 - 358
The Donor State of Vanadium in Indium Phosphide
Georges Bremond
A. Nouailhat
C. Naud
OriginalPaper 28 February 2011 Pages: 359 - 364
A Photoluminescence Study of Cd Related Centers in InP
V. Swaminathan
V. M. Donnelly
J. Long
OriginalPaper 28 February 2011 Pages: 365 - 370
Absolute Photoionization Cross Sections of the Acceptor State Level of Chromium in Indium Phosphide
Georges Bremond
G. Guillot
G. Picoli
OriginalPaper 28 February 2011 Pages: 371 - 375
High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide
D. K. Sadana
J. M. Zavada
T. Sands
OriginalPaper 28 February 2011 Pages: 377 - 384
A Tentative Identification of Certain Deep Levels in GaAs and Related Compounds
Zou Yuanxi(Chou Yuanhsi)
Mo Peigen
Zhang Guicheng
OriginalPaper 28 February 2011 Pages: 385 - 390
Growth of (110) GaAs/GaAs by Molecular Beam Epitaxy
L. T. Parechanian
E. R. Weber
T. L. Hierl
OriginalPaper 28 February 2011 Pages: 391 - 396
Defects in GaAs as Revealed by Chemical Etching
H. Lessoff
W. Tseng
OriginalPaper 28 February 2011 Pages: 397 - 401
Charge Trapping by Deep Donors in Si-Doped Al_xGa_1−xAs
P. M. Mooney
N. S. Caswell
S. L. Wright
OriginalPaper 28 February 2011 Pages: 403 - 408
A Study of Co and Mn in ZnO Varistors
G. E. Pike
C. H. Seager
R. G. Dosch
OriginalPaper 28 February 2011 Pages: 409 - 414
Dry-Processing Induced Isolation-Degradation in GaAs Integrated Circuits
M. F. Chang
C. P. Lee
R. T. Chen
OriginalPaper 28 February 2011 Pages: 415 - 418

Volume 46, Issue 1

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