1. InAsSb/InAlAsSb Quantum-Well Diode Lasers Emitting Between 3 and 4 μm

   • G. W. Turner
   • H. K. Choi
   • M. K. Connors

   OriginalPaper 10 February 2011 Pages: 3 - 12

2. High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range

   • M. Razeghi
   • J. Diaz
   • H. Jeon

   OriginalPaper 10 February 2011 Pages: 13 - 22

3. Novel Mid-Infrared Lasers with Compressively Strained InAsSb Active Regions

   • S. R. Kurtz
   • R. M. Biefeld
   • A. A. Allerman

   OriginalPaper 10 February 2011 Pages: 23 - 29

4. IR Sources and Modulators Based on InAs/GaSb/AlSb-Family Quantum Wells

   • J. R. Meyer
   • C. L. Felix
   • L. R. Ram-Mohan

   OriginalPaper 10 February 2011 Pages: 31 - 42

5. Preparation of AlAsSb and Mid-Infrared (3-5μm) Lasers By Metal-Organic Chemical Vapor Deposition

   • A. A. Allerman
   • R. M. Biefeld
   • S. R. Kurtz

   OriginalPaper 10 February 2011 Pages: 43 - 48

6. LPE Growth of Mixed Composition HI-V “Virtual Substrates” for MID-Infrared Optoelectronic Devices

   • Y. Mao
   • A. Krier

   OriginalPaper 10 February 2011 Pages: 49 - 54

7. GalnAsSb Materials for Thermophotovoltaics

   • C. A. Wang
   • G. W. Turner
   • D. L. Spears

   OriginalPaper 10 February 2011 Pages: 55 - 60

8. Optical Characterization and Mapping of Four INCH InSb Epitaxial thin Films Grown on GaAs by Turbo Disk Metalorganic Chemical Vapor Deposition

   • Z. C. Feng
   • C. Beckham
   • A. Whitley

   OriginalPaper 10 February 2011 Pages: 61 - 66

9. Formation of Double-Channel Mesa Structure for GaSb-BASED MID-Infrared Laser

   • Anna Piotrowska
   • Marek Guziewicz
   • Ewa Papis

   OriginalPaper 10 February 2011 Pages: 67 - 72

10. Room Temperature led’s for the MID-Infrared Based on in(AS,SB) Strained Layer Superlattices

    • C. C. Phillips
    • P. J. P. Tang
    • L. Hart

    OriginalPaper 10 February 2011 Pages: 73 - 78

11. InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al₂0₃ Substrates

    • E. Michel
    • H. Mohseni
    • M. Ahoujja

    OriginalPaper 10 February 2011 Pages: 79 - 84

12. Theoretical Performance of MID-IR Broken-Gap Superlattice Quantum Well Lasers

    • Michael E. Flatté
    • C. H. Grein
    • T. F. Boggess

    OriginalPaper 10 February 2011 Pages: 85 - 90

13. Low-Loss, Broadened-Waveguide, High-Power 2-μm AlGaAsSb/InGaAsSb/GaSb Separate Confinement Quantum-Well Lasers

    • R. J. Menna
    • D. Z. Garbuzov
    • S. Y. Narayan

    OriginalPaper 10 February 2011 Pages: 91 - 96

14. MBE Growth and Characterization of InSb/Al_xIn_1−xSb Strained Layer Structures

    • K. J. Goldammer
    • W. K. Liu
    • M. L. O’steen

    OriginalPaper 10 February 2011 Pages: 97 - 102

15. MBE Growth of InSb Based Device Structures onto InSb(111)A,(111)B and InGaSb(111)A Substrates

    • A. D. Johnson
    • R. Jefferies
    • T. Martin

    OriginalPaper 10 February 2011 Pages: 103 - 108

16. Spontaneous and Stimulated Intersubband Emission Under Optical Pumping

    • P. Boucaud
    • S. Sauvage
    • J. Nagle

    OriginalPaper 10 February 2011 Pages: 111 - 122

17. Intersubband Transitions in Microcavities with a Grating: Coupled Oscillators

    • J. Y. Duboz

    OriginalPaper 10 February 2011 Pages: 123 - 128

18. Emission Efficiency in InAs LEDs Controlled by Surface Recombination

    • M. J. Kane
    • G. Braithwaite
    • D. R. Wight

    OriginalPaper 10 February 2011 Pages: 129 - 134

19. Cavities for Intersubband Transitions

    • V. Berger
    • J. Y. Duboz
    • R. Planel

    OriginalPaper 10 February 2011 Pages: 135 - 146

20. Single Mode Operation of Impurity-Induced Disordering Large Area Vertical Cavity Surface Emitting Lasers

    • C. W. Lo
    • S. F. Yu

    OriginalPaper 10 February 2011 Pages: 147 - 152

21. Growth and Characterization of InAs_xP_1−x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Expitaxy

    • H. C. Kuo
    • S. Thomas
    • H. Chen

    OriginalPaper 10 February 2011 Pages: 153 - 158

22. 1.5 μm In_0.53Al_0.14Ga_0.33As/In_0.52Al_0.48As Distributed Bragg Reflector and Single Cavity Active Layer Grown with In-Situ Double Beam Laser Reflectometry

    • Jong-Hyeob Baek
    • Bun Lee
    • El-Hang Lee

    OriginalPaper 10 February 2011 Pages: 159 - 164

23. Stark Shift and Field Induced Tunneling in Doped Quantum Wells with Arbitrary Potential Profiles

    • S. Panda
    • B. K. Panda
    • C. D. Beling

    OriginalPaper 10 February 2011 Pages: 165 - 170

24. Theoretical Studies of Electronic Intersubband Transitions in n-Type Doped Quantum Wells for Infrared Photodetector Applications

    • Danhong Huang
    • M. O. Manasreh

    OriginalPaper 10 February 2011 Pages: 173 - 187

25. Infra-Red Tunneling Absorption in Semiconductor Double Quantum Wells in Tilted Magnetic Fields

    • S. K. Lyo

    OriginalPaper 10 February 2011 Pages: 189 - 194

26. GaAs/GaInP Quantum Well Intersubband Photodetectors for Focal Plane Array Infrared Imaging

    • C. Jelen
    • S. Slivken
    • M. Razeghi

    OriginalPaper 10 February 2011 Pages: 195 - 199

27. Intersubband Transitions, Infrared Detectors, and Optical Nonlinearities in SiGe Multiquantum Wells

    • M. Helm
    • P. Kruck
    • G. Abstreiter

    OriginalPaper 10 February 2011 Pages: 201 - 211

28. A Novel Infrared Sige/Si Heterojunction Detector with an Ultrathin Phosphorus Barrier Grown by Atomic Layer Deposition

    • R. Banisch
    • B. Tilack
    • G. Ritter

    OriginalPaper 10 February 2011 Pages: 213 - 218

29. Dark Current Reduction in Near Infrared P-I-N Detector Diodes Fabricated from In_.75Ga_.25As Grown by Molecular Beam Epitaxy on InP Substrates

    • M. Micovic
    • W. Z. Cai
    • D. L. Miller

    OriginalPaper 10 February 2011 Pages: 219 - 224

30. Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells

    • D. K. Sengupta
    • S. Kim
    • H. C. Liu

    OriginalPaper 10 February 2011 Pages: 225 - 230

31. Normal Incidence Photoresponse as a Function of Well Width in P-Type GaAs/AlGaAs Multi-Quantum Wells

    • G. J. Brown
    • M. A. Capano
    • F. Szmulowicz

    OriginalPaper 10 February 2011 Pages: 231 - 236

32. Resonant-Cavity Infrared Devices

    • J. L. Pautrat
    • E. Hadji
    • N. Magnea

    OriginalPaper 10 February 2011 Pages: 239 - 250

33. P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

    • F. Aqariden
    • P. S. Wijew Arnasuriya
    • S. Sivananthan

    OriginalPaper 10 February 2011 Pages: 251 - 255

34. High Performance HgCdTe-Detectors Grown by Molecular Beam Epitaxy

    • R. D. Rajavel
    • D. M. Jamba
    • G. Venzor

    OriginalPaper 10 February 2011 Pages: 257 - 262

35. The Role of Atomic Hydrogen for Substrate Cleaning for Growth of CdTe Buffer Layers at Reduced Temperatures on Silicon, CdTe, and HgCdTe

    • L. S. Hirsch
    • Zhonghai Yu
    • T. H. Myers

    OriginalPaper 10 February 2011 Pages: 263 - 268

36. In Situ Spectroscopic Ellipsometry for Monitoring and Control of HgCdTe Heterostructures Grown by Molecular Beam Epitaxy

    • L. A. Almeida
    • M. J. Bevan
    • H. D. Shih

    OriginalPaper 10 February 2011 Pages: 269 - 274

37. Characterization of the CH₄/H₂/Ar High Density Plasma Etch Process for HgCdTe

    • C. R. Eddy Jr.
    • D. Leonhardt
    • J. E. Butler

    OriginalPaper 10 February 2011 Pages: 275 - 280

38. HgCdTe(211)B Grown on CdTe(211)B/ZnTe(211)B/Si(211) by MBE

    • S. Rujirawat
    • P. S. Wijewarnasuriya
    • S. Sivananthan

    OriginalPaper 10 February 2011 Pages: 281 - 285

39. Raman Scattering Study of H₂O₂-Etched Zn_0.1Cd_0.9Te Surfaces

    • Brajesh K. Rai
    • R. S. Katiyar
    • A. Burger

    OriginalPaper 10 February 2011 Pages: 287 - 292

40. Spectroscopic Ellipsometry Study of HgCdTe Epilayer Surfaces During Electron Cyclotron Resonance Plasma Etching

    • J. N. Johnson
    • J. H. Dinan
    • B. Johs

    OriginalPaper 10 February 2011 Pages: 293 - 300

41. Off-Area Bonding of HgCdTe Photoconductive Infrared Detectors using Tri-Layer Photolithography and Wet/Dry Etching Techniques

    • Sridhar Manthripragada
    • Kelley Hu
    • Peter Shu

    OriginalPaper 10 February 2011 Pages: 301 - 306

42. Inelastic Light Scattering in Zinc Germanium Diphosphide Crystals

    • B. H. Bairamov
    • V. K. Negoduyko
    • H. E. Jackson

    OriginalPaper 10 February 2011 Pages: 309 - 314

43. Melt Growth of ZnGeP₂: Homogeneity Range and Thermochemical Properties

    • S. Fiechter
    • R. H. Castleberry
    • K. J. Bachmann

    OriginalPaper 10 February 2011 Pages: 315 - 320

44. Composition of the Equilibrium Vapor Phase Over ZnGeP₂ and Thermal Stability

    • S. Fiechter
    • A. Kurzweil
    • K. J. Bachmann

    OriginalPaper 10 February 2011 Pages: 321 - 325

45. Electron Paramagnetic Resonance and Photoluminescence Studies of Point Defects in Zinc Germanium Phosphide (ZnGeP₂)

    • S. D. Setzler
    • L. E. Halliburton
    • T. M. Pollak

    OriginalPaper 10 February 2011 Pages: 327 - 332

46. Defect Characterization in ZnGeP₂ by Time -Resolved Photoluminescence

    • N. Dietz
    • W. Busse
    • K. J. Bachmann

    OriginalPaper 10 February 2011 Pages: 333 - 338

47. Photoluminescence Study of p-ZnGeP₂ Crystals

    • Yurri V. Rud
    • Vasilii Yu
    • P. G. Shunemann

    OriginalPaper 10 February 2011 Pages: 339 - 344

48. Self-Trapping of Optical Beams and Light-Induced Waveguiding in Photorefractive InP at Telecommunication Wavelengths

    • M. E. Chauvet
    • S. A. Hawkins
    • G. Bryant

    OriginalPaper 10 February 2011 Pages: 345 - 350

49. Diffused Quantum Well Structures: Advances in Materials and Device Realizations

    • E. Herbert Li

    OriginalPaper 10 February 2011 Pages: 353 - 364

50. Interdiffusion in Quantum Wells: Mixing Mechanisms and Energy Levels

    • Richard G. Gass
    • Howard E. Jackson
    • Bernard L. Weiss

    OriginalPaper 10 February 2011 Pages: 365 - 370