Metalorganic vapor phase epitaxial growth of GaInN/GaN hetero structures and quantum wells F. ScholzV. HärleH. Lakner OriginalPaper 10 February 2011 Pages: 3 - 14
Growth of GaN by Sublimation Technique and Homoepitaxial Growth by MOCVD Shiro SakaiSatoshi KuraiYoshiki Nagi OriginalPaper 10 February 2011 Pages: 15 - 22
MOVPE Growth and Optical Characterization of GaPN Metastable Alloy Semiconductor K. Onabe OriginalPaper 10 February 2011 Pages: 23 - 34
GaN Crystals Grown in the Increased Volume High-Pressure Reactors S. PorowskiM. BockowskiJ. Baranowski OriginalPaper 10 February 2011 Pages: 35 - 40
Growth of Bulk AlN and GaN Single Crystals by Sublimation C. M. BalkşZ. SitarR. F. Davis OriginalPaper 10 February 2011 Pages: 41 - 46
Synthesis of Bulk, Polycrystalline Gallium Nitride at Low Pressures Alberto ArgoitiaJohn C. AngusKathleen Kash OriginalPaper 10 February 2011 Pages: 47 - 52
Nitrogen Plasma Pretreatment of Sapphire Substrates for the GaN Buffer Growth by Remote Plasma Enhanced MOCVD Min Hong KimCheolsoo SoneEuijoon Yoon OriginalPaper 10 February 2011 Pages: 53 - 58
Effect of Sapphire Nitridation on GaN by MOCVD Dongjin ByunJaesik JeongDong-Wha Kum OriginalPaper 10 February 2011 Pages: 59 - 65
Effect of the Nitridation of the Sapphire (0001) Substrate on the GaN Growth N. GrandjeanJ. MassiesM. Leroux OriginalPaper 10 February 2011 Pages: 67 - 72
Initial Growth Stage of AlGaN Grown Directly on (0001) 6H−SiC by MOVPE K. HorinoA. KuramataT. Tanahashi OriginalPaper 10 February 2011 Pages: 73 - 78
AlxGa1−xN-Based Materials and Heterostructures P. KungA. SaxlerM. Razeghi OriginalPaper 10 February 2011 Pages: 79 - 84
A Model for Indium Incorporation in the Growth of InGaN Films E. L. PinerF. G. McintoshS. X. Liu OriginalPaper 10 February 2011 Pages: 85 - 88
The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE Yasutoshi KawaguchiMasaya ShimizuNobuhiko Sawaki OriginalPaper 10 February 2011 Pages: 89 - 94
Low-Temperature Metalorganic Chemical Vapor Deposition of Gallium Nitride on (0001) Sapphire Substrates Using a Remote RF Nitrogen Plasma Cheolsoo SoneMin Hong KimEuijoon Yoon OriginalPaper 10 February 2011 Pages: 95 - 100
MOVPE GaN Gas-Phase Chemistry for Reactor Design and Optimization S. A. SafviJ. M. RedwingT. F. Kuech OriginalPaper 10 February 2011 Pages: 101 - 106
Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H−SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy O. H. NamM. D. BremserR. F. Davis OriginalPaper 10 February 2011 Pages: 107 - 112
A Microstructural Analysis of Orientation Variation in Epitaxial AlN on Si, Its Probable Origin, and Effect on Subsequent GaN Growth R. BeyeT. GeorgeM. A. Khan OriginalPaper 10 February 2011 Pages: 113 - 118
Observation of Near Band Edge Transition in Aluminum Nitride Thin Film Grown by MOCVD Xiao TangFazla R. B. HossainMichael G. Spencer OriginalPaper 10 February 2011 Pages: 119 - 122
MOCVD Growth of GaN Films on Lattice-Matched Oxide Substrates O. M. KrylioukT. W. DannK. S. Jones OriginalPaper 10 February 2011 Pages: 123 - 128
III–V nitride growth by atmospheric-pressure MOVPE with a three-layered flow channel Kazuo UchidaHiroki TokunagaMasayoshi Umeno OriginalPaper 10 February 2011 Pages: 129 - 134
GaN Quantum Dots in AlxGa1−xN Confined Layer Structures Satoru TanakaHideki HirayamaYoshinobu Aoyagi OriginalPaper 10 February 2011 Pages: 135 - 140
Growth of AlBN Solid Solution by OMVPE M. ShinA. Y. PolyakovR. G. Wilson OriginalPaper 10 February 2011 Pages: 141 - 146
MBE Growth of (In)GaN for LED Applications H. RiechertR. AverbeckH. Tews OriginalPaper 10 February 2011 Pages: 149 - 159
On Surface Cracking of Ammonia for MBE Growth of GaN M. KampM. MayerK. J. Ebeling OriginalPaper 10 February 2011 Pages: 161 - 172
Growth of Cubic GaN by MBE and Its Properties S. YoshidaH. OkumuraK. Balakrishnan OriginalPaper 10 February 2011 Pages: 173 - 184
MBE Growth and Optical Characterization of InGaN/AlGaN Multiquantum Wells R. SinghW. D. HerzogT. D. Moustakas OriginalPaper 10 February 2011 Pages: 185 - 190
In Situ Reflection High-Energy Electron Diffraction Study of Structure and Morphology Evolution of AlN Thin Films During Growth F. JinG. W. AunerU. Rao OriginalPaper 10 February 2011 Pages: 191 - 196
The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions S. L. BuczkowskiZhonghai YuT. H. Myers OriginalPaper 10 February 2011 Pages: 197 - 202
A Study of Mixed Group-V Nitrides Grown by Gas-Source Molecular Beam Epitaxy Using a Nitrogen Radical Beam Source W. G. BiC. W. TuR. Hull OriginalPaper 10 February 2011 Pages: 203 - 208
Kinetics of Nitrogen in GaAsN Layers During GaAs Overgrowth Z. Z. BandićR. J. HauensteinT. C. Mcgill OriginalPaper 10 February 2011 Pages: 209 - 214
Reactive MBE Growth of GaN and GaN∶:H on GaN/SiC Substrates M. A. L. JohnsonZhonghai YuJ. A. Edmond OriginalPaper 10 February 2011 Pages: 215 - 220
Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source M. S. H. LeungR. KlockenbrinkE. R. Weber OriginalPaper 10 February 2011 Pages: 221 - 226
Impact of Growth Temperature, Pressure, and Strain on the Morphology of GaN Films H. FujiiC. KisielowskiE. R. Weber OriginalPaper 10 February 2011 Pages: 227 - 232
Doping Studies of N- and P-Type AlxGa1−xN Grown by ECR-Assisted MBE D. KorakakisH. M. NgT. D. Moustakas OriginalPaper 10 February 2011 Pages: 233 - 238
Microstructures of AlN Buffer Layers for the Growth of GaN on (0001) Al2O3 M. YeadonW. KimJ. M. Gibson OriginalPaper 10 February 2011 Pages: 239 - 244
Growth and Characterization of AlN on 6H−SiC Substrates M. LekovaG. W. AunerV. Naik OriginalPaper 10 February 2011 Pages: 245 - 250
Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBE S. RuvimovZ. Liliental-WeberS. R. Lee OriginalPaper 10 February 2011 Pages: 251 - 256
Surface Reconstructions and III–V Stoichiometry: The Case of Cubic and Hexagonal GaN G. FeuilletP. HackeS. Yoshida OriginalPaper 10 February 2011 Pages: 257 - 262
Large-Area Growth of InGaN/AlGaN Using In-Situ Monitoring E. WoelkD. SchmitzH. Juergensen OriginalPaper 10 February 2011 Pages: 265 - 269
MBE Growth of III–V Nitride Films and Quantum-Well Structures Using Multiple RF Plasma Sources M. A. L. JohnsonZhonghai YuJ. A. Edmond OriginalPaper 10 February 2011 Pages: 271 - 276
Large Area Supersonic Jet Epitaxy of AlN, GaN, and SiC on Silicon L. J. LauhonS. A. UstinW. Ho OriginalPaper 10 February 2011 Pages: 277 - 282
A Study of the Surface Morphological Features of the Polar Faces of ZnO by Atomic Force Microscopy (AFM) Methods and AlN Thin Films Deposited on ZnO Polar Faces by PLD M. J. SuscavageD. F. Ryder Jr.P. W. Yip OriginalPaper 10 February 2011 Pages: 283 - 288
Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase Epitaxy S. A. SafviN. R. PerkinsT. F. Kuech OriginalPaper 10 February 2011 Pages: 289 - 294
Morphology and Dielectric Properties of Reactively Sputtered Aluminum Nitride Thin Films A. G. RandolphS. K. Kurinec OriginalPaper 10 February 2011 Pages: 295 - 300
Low-Temperature Deposition and Characterization of AlxIn1−xN Thin Films Guohua QiurJ. O. OlowolafeJ. Piprek OriginalPaper 10 February 2011 Pages: 301 - 306
Low Pressure CVD of GaN from GaCl3 and NH3 M. TopfS. KoynovB. K. Meyer OriginalPaper 10 February 2011 Pages: 307 - 312
New Pathways to Heteroepitaxial GaN by Inorganic CVD Synthesis and Characterization of Related Ga−C−N Novel Systems J. KouvetakisM. O’keeffeD. J. Smith OriginalPaper 10 February 2011 Pages: 313 - 318
TOF-LEIS Characterization and Growth of GaN Thin Films Grown with ECR and NH3 E. KimA. BensaoulaK. Waters OriginalPaper 10 February 2011 Pages: 319 - 324
The Growth of GaN Films by Migration-Enhanced Epitaxy S. E. HooperC. T. FoxonG. Duggan OriginalPaper 10 February 2011 Pages: 325 - 330
Thin Film Growth of Group III Nitrides by Mass Separated Ion Beam Deposition C. RonningE. DreherH. Hofsäss OriginalPaper 10 February 2011 Pages: 331 - 336