1. Chemically Stable Semiconductor Surface Layers Using Low-Temperature Grown GaAs

   • D. B. Janes
   • S. Hong
   • J. M. Woodall

   OriginalPaper 03 September 2012 Pages: 3 - 13

2. Surface Reconstruction and Morphology of Hydrogen Sulfide Treated GaAs (001) Substrate

   • Jun Suda
   • Yoichi Kawakami
   • Shigeo Fujita

   OriginalPaper 03 September 2012 Pages: 15 - 20

3. Improvement of InGaP/GaAs Heterointerface Quality by ControllingAsH₃ Flow Conditions

   • Yoshino K. Fukai
   • Fumiaki Hyuga
   • Hirohiko Sugahara

   OriginalPaper 03 September 2012 Pages: 21 - 26

4. Processing of InP and GaAs Surfaces by Hydrogen and Oxygen Plasmas: In Situ Real Time Ellipsometric Monitoring

   • M. Losurdo
   • P. Capezzuto
   • G. Bruno

   OriginalPaper 03 September 2012 Pages: 27 - 32

5. Characterization of GaAs Surfaces Subjected to A Cl₂/Ar High Density Plasma Etching Process

   • C. R. Eddy Jr.
   • O. J. Glembocki
   • C. E. Stutz

   OriginalPaper 03 September 2012 Pages: 33 - 37

6. Cl₂ Plasma Etching of Si(100): Surface Chemistry and Damage

   • N. Layadi
   • V. M. Donnelly
   • J. T. C. Lee

   OriginalPaper 03 September 2012 Pages: 39 - 44

7. Theory of Reactive Adsorption on Si(100)

   • D. J. Doren
   • A. Robinson Brown
   • R. Konecny

   OriginalPaper 03 September 2012 Pages: 45 - 50

8. Nonradiative recombination on Si surfaces during anodic oxidation in fluoride solution

   • J. Rappich
   • V. Yu. Timoshenko
   • Th. Dittrich

   OriginalPaper 03 September 2012 Pages: 51 - 56

9. Advanced Lithography for Nanofabrication

   • Frank Y. C. Hui
   • Gyula Eres

   OriginalPaper 03 September 2012 Pages: 57 - 62

10. In Situ Infrared Observation of Hydrogenation, Oxidation, and Adsorption on Silicon Surfaces in Solutions

    • Yoshihiro Sugita
    • Satoru Watanabe

    OriginalPaper 03 September 2012 Pages: 63 - 68

11. Analysis of InP Passivated with Thiourea/Ammonia Solutions and Thin CdS Films

    • H. M. Dauplaise
    • A. Davis
    • J. P. Lorenzo

    OriginalPaper 03 September 2012 Pages: 69 - 74

12. Surface Oxidation Study of Silicon-Doped GaAs Wafers by Ftir Spectroscopy

    • R.-H. Chang
    • M. Al-Sheikhly
    • C. Varmazis

    OriginalPaper 03 September 2012 Pages: 75 - 80

13. Chemical Characterization by FT-IR Spectrometry and Modification of the Very First Atomic Layer of a TiO₂ Nanosized Powder

    • M.-I. Baraton
    • L. Merhari
    • J. Tribout

    OriginalPaper 03 September 2012 Pages: 81 - 86

14. In-Situ Etch to Improve Chemical Beam Epitaxy Regrown AlgaAs/GaAs Interfaces for HBT Applications

    • Y. M. Hsin
    • N. Y. Li
    • P. M. Asbeck

    OriginalPaper 03 September 2012 Pages: 87 - 92

15. Ultra High Vacuum Scanning Tunneling Microscopy Observation of Multilayer Step Structure on GaAs and AlAs Vicinal Surface Grown by Metalorganic Vapor Phase Epitaxy

    • Jun-Ya Ishizaki
    • Yasuhiko Ishizaki
    • Takashi Fukui

    OriginalPaper 03 September 2012 Pages: 95 - 100

16. In Situ Optical Observation and Control of Initial Stages of GaAs Growth On Caf₂ Surface Modified by Electron Beam Irradiation

    • K. Kawasaki
    • K. Tsutsui

    OriginalPaper 03 September 2012 Pages: 101 - 106

17. Formation of ZnSe/GaAs Heterovalent Heterostructures by Movpe

    • Mitsuru Funato
    • Satoshi Aoki
    • Shigeo Fujita

    OriginalPaper 03 September 2012 Pages: 107 - 112

18. Atomic Hydrogen Assisted Growth of Si-Ge Heterostructures on (001) Si

    • J.-M. Baribeau
    • D. J. Lockwood
    • H. J. Labbé

    OriginalPaper 03 September 2012 Pages: 113 - 118

19. Surface Reactions During the Deposition of Ge from Chemical Sources on Ge(100)-(2×1)

    • C. Michael Greenlief
    • Jihong Chen

    OriginalPaper 03 September 2012 Pages: 119 - 124

20. Physics and Control of Si/Ge Heterointerfaces

    • S. Fukatsu
    • N. Usami
    • R. Ito

    OriginalPaper 03 September 2012 Pages: 125 - 134

21. Surfactant-Mediated Si/Ge Epitaxial Crystal Growth

    • Eunja Kim
    • Chan Wuk Oh
    • Young Hee Lee

    OriginalPaper 03 September 2012 Pages: 135 - 140

22. Growth of ZnSe-Based Compounds on Ge-Terminated GaAs Surface

    • T. Saitoh
    • A. Tsujimura
    • Y. Sasai

    OriginalPaper 03 September 2012 Pages: 141 - 145

23. Anisotropy in Atomic-Scale Interface Structure and Mobility in Inas/Ga₁__Xin_xsb Superlattices

    • A. Y. Lew
    • S. L. Zuo
    • R. H. Miles

    OriginalPaper 03 September 2012 Pages: 147 - 152

24. Interface Roughness in Strained Si/SiGe Multilayers

    • A. A. Darhuber
    • V. Holy
    • G. Abstreiter

    OriginalPaper 03 September 2012 Pages: 153 - 158

25. Surface Roughening and Composition Modulation of ZnSe-related II-VI epitaxial films

    • Shigetaka Tomiya
    • Hironori Tsukamoto
    • Akira Ishibashi

    OriginalPaper 03 September 2012 Pages: 159 - 164

26. Direct Bandgap Quantum Wells on GaP

    • Jong-Won Lee
    • Alfred T. Schremer
    • Joseph M. Ballantyne

    OriginalPaper 03 September 2012 Pages: 165 - 170

27. Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF₂ AND CaF₂ on Si(111)

    • Akira Izumi
    • Noriyuki Matsubara
    • Nikolai S. Sokolov

    OriginalPaper 03 September 2012 Pages: 171 - 175

28. Modification of the Surface Band-Bending of A Silicon CCD for Low-Energy Electron Detection

    • Aimée L. Smith
    • Qiuming Yu
    • Shouleh Nikzad

    OriginalPaper 03 September 2012 Pages: 177 - 183

29. Comparison of the Morphological and Optical Characteristics of InP Islands on GalnP/GaAs (311)A and (100)

    • R. I. Pelzel
    • C. M. Reaves
    • W. H. Weinberg

    OriginalPaper 03 September 2012 Pages: 187 - 192

30. A Self-Organized Molecular Beam Epitaxial Growth of the InSb/AlGaSb Quantum Dots on High-Index GaAs Substrates

    • Mitsuaki Yano
    • Kazuto Koike
    • Kanji Yoh

    OriginalPaper 03 September 2012 Pages: 193 - 198

31. Structural Investigations of Self-Assembled Ge-Dots by X-Ray Diffraction and Reflection

    • A. A. Darhuber
    • V. Holy
    • G. Abstreiter

    OriginalPaper 03 September 2012 Pages: 199 - 204

32. Antimony Cluster Manipulation on the Si(001) Surface by Means of STM

    • I. I. Kravchenko
    • C. T. Salling
    • M. G. Lagally

    OriginalPaper 03 September 2012 Pages: 205 - 210

33. Direct Formation of Fine Structure by Low Energy Focused Ion Beam

    • T. Chikyow
    • A. Shikanai
    • N. Koguchi

    OriginalPaper 03 September 2012 Pages: 211 - 216

34. Surface Adsorption Kinetics of Ga Wire Arrays on Si(112)

    • S. M. Prokes
    • O. J. Glembocki

    OriginalPaper 03 September 2012 Pages: 217 - 221

35. Surface Morphology of Nanoscale TiSi₂ Epitaxial Islands on Si(001)

    • Woochul Yang
    • F. J. Jedema
    • R. J. Nemanich

    OriginalPaper 03 September 2012 Pages: 223 - 228

36. Structural Defects in Thick Ingaas Layers Grown by Lpee on Partially Masked GaAs Substrates

    • T. Bryskiewicz

    OriginalPaper 03 September 2012 Pages: 231 - 240

37. Facet Formation in Submicron Selective Growth of Si/SiGe

    • K. L. Wang
    • Dawen Wang

    OriginalPaper 03 September 2012 Pages: 241 - 251

38. GaInP Selective Area Epitaxy for Heterojunction Bipolar Transistor Applications

    • S. H. Park
    • S.-L. Fu
    • P. M. Asbeck

    OriginalPaper 03 September 2012 Pages: 253 - 258

39. Selective growth of MOVPE on AlGaAs/GaAs patterned substrates for quantum nano-structures

    • Makoto Sakuma
    • Takashi Fukui
    • Junichi Motohisa

    OriginalPaper 03 September 2012 Pages: 259 - 263

40. Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular Hot-Wall Low Pressure Chemical Vapor Deposition Systems

    • I. M. Leet
    • W. C. Wang
    • C. G. Takoudis

    OriginalPaper 03 September 2012 Pages: 265 - 270

41. Ultra Thin SiO₂ Mask Layer for Nano-Scale Selective-Area Pecvd of Si

    • J. W. Park
    • T. Yasuda
    • K. Tanaka

    OriginalPaper 03 September 2012 Pages: 271 - 276

42. Solid Phase Crystallization of LPCVD Amorphous Si Films by Nucleation Interface Control

    • Eui-Hoon Hwang
    • Jae-Sang Ro

    OriginalPaper 03 September 2012 Pages: 277 - 282

43. Interfacial Arsenic from Wet Oxidation of Al_xGa_1-xAs/GaAs: Its Effects on Electronic Properties and New Approaches to Mis Device Fabrication

    • Carol I. H. Ashby
    • John P. Sullivan
    • Albert G. Baca

    OriginalPaper 03 September 2012 Pages: 285 - 290

44. Microstructure and Interfacial Properties of Laterally Oxidized Al_xGa_1-xAs

    • R. D. Twesten
    • D. M. Follstaedt
    • K. D. Choquette

    OriginalPaper 03 September 2012 Pages: 291 - 296

45. Nitridation of Si(111)−7×7 Surface by Low Energy Nitrogen Ions: STM Investigation

    • Jeong Sook Ha
    • Kang-Ho Park
    • Seong-Ju Park

    OriginalPaper 03 September 2012 Pages: 297 - 302

46. The effect of processing conditions on the structure of buried interfaces between silicon and silicon dioxide

    • Xidong Chen
    • J. Murray Gibson

    OriginalPaper 03 September 2012 Pages: 303 - 308

47. Spectroscopic Investigation of Lithium Intercalation in Thin Films of Anatase Titanium Dioxide

    • R. Van De Krol
    • A. Goossens
    • J. Schoonman

    OriginalPaper 03 September 2012 Pages: 309 - 314

48. Improvement of Ultrathin Oxides by Post-Oxidation Annealing

    • Tomoyuki Sakoda
    • Mieko Matsumura
    • Yasushiro Nishioka

    OriginalPaper 03 September 2012 Pages: 315 - 320

49. Charge Trapping and Degradation of High Permittivity TiO₂ Dielectric Metal-Oxide-Semiconductor Field Effect Transistors

    • Hyeon-Saeg Kim
    • S. A. Campbell
    • D. L. Polla

    OriginalPaper 03 September 2012 Pages: 321 - 326

50. Interface properties of Si₃N₄/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

    • D. G. Park
    • D. M. Diatezua
    • H. Morkoç

    OriginalPaper 03 September 2012 Pages: 327 - 331