Volume 423, Issue 1

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December 1996

Symposium E — III-Nitride, SiC, and Diamond Materials for Electronic

Issue Editors:

C.D. Brandt,
D.K. Gaskill,
R.J. Nemanich

120 articles in this issue

SiC Semiconductor Applications - An Air Force Perspective
L.S. Rea
OriginalPaper 15 February 2011 Pages: 3 - 7
SiC Power Devices
T.P. Chow
M. Ghezzo
OriginalPaper 15 February 2011 Pages: 9 - 21
Growth of High Quality (In,Ga,Al)N/GaN Heterostructure Materials and Devices by Atmospheric Pressure MOCVD
S. P. Denbaars
S. Keller
U. K. Mishra
OriginalPaper 15 February 2011 Pages: 23 - 31
Investigation of an ΝEA Diamond Vacuum Microtriode Array
C.W. Hatfield
G.L. Bilbro
R.J. Nemanich
OriginalPaper 15 February 2011 Pages: 33 - 38
Tetrahedral Amorphous Carbon Thin Film Transistors
F.J. Clough
B. Kleinsorge
J. Robertson
OriginalPaper 15 February 2011 Pages: 39 - 43
Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio
J. Kolnik
I. H. Oguzman
P. P. Ruden
OriginalPaper 15 February 2011 Pages: 45 - 50
OBIC Measurements on 6H-SiC Schottky Diodes
K. Rottner
A. Schöner
R. Helbig
OriginalPaper 15 February 2011 Pages: 51 - 56
Defect Dominant Junction Characteristics of 4H-SiC p⁺/n Diodes
J. Scofield
M. Dunn
R. Hengehold
OriginalPaper 15 February 2011 Pages: 57 - 62
Fabrication of Highly Oriented, Smooth Diamond Films on Silicon for Electronic Devices
S.D. Wolter
T.H. Borst
Ε. Kohn
OriginalPaper 15 February 2011 Pages: 63 - 68
Radiative Recombination Rates in GaN, InN, AIN and their Solid Solutions
A.V. Dmitriev
A.L. Oruzheinikov
OriginalPaper 15 February 2011 Pages: 69 - 73
Pyroelectric Effect in Wurtzite Gallium Nitride
A. D. Bykhovski
V. V. Kaminski
M. A. Khan
OriginalPaper 15 February 2011 Pages: 75 - 79
CVD Diamond Wires as X-Ray Detectors
C. Manfredotti
F. Fizzotti
E. Vittone
OriginalPaper 15 February 2011 Pages: 81 - 86
Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures
A. K. Agarwal
R. R. Siergiej
R. H. Hopkins
OriginalPaper 15 February 2011 Pages: 87 - 92
High-Temperature Switching Characteristics of 6H-SiC Thyristor
K. Xie
J.R. Flemish
J.H. Zhao
OriginalPaper 15 February 2011 Pages: 93 - 98
Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique
T.S. Sudarshan
V. P. Madangarli
T. Isaacs-Smith
OriginalPaper 15 February 2011 Pages: 99 - 104
Characterization of 4H-SiC Jfets for use in Analog Amplifiers Capable of 723K Operation
J.B. Casady
D.C. Sheridan
R.W. Johnson
OriginalPaper 15 February 2011 Pages: 105 - 110
High Electric Field Breakdown of 4H-SiC pn Junction Diodes
C.C. Tin
V. Madangarli
R.W. Johnson
OriginalPaper 15 February 2011 Pages: 111 - 115
Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome
E.D. Luckowski
J.R. Williams
J. Crofton
OriginalPaper 15 February 2011 Pages: 119 - 124
Chemical and Structural Characterization of the Ni-Ti Alloy/ 6H-SiC Contacts
M. Levit
I. Grimberg
M. Eizenberg
OriginalPaper 15 February 2011 Pages: 125 - 130
Low Resistance Ohmic Contact on p-type GaN Grown by Plasma-Assisted Molecular Beam Epitaxy
Myung C. Yoo
J.W. Lee
K. Kim
OriginalPaper 15 February 2011 Pages: 131 - 136
Approaches to High Temperature Contacts to Silicon Carbide
J. M. Delucca
S. E. Mohney
OriginalPaper 15 February 2011 Pages: 137 - 142
Characterization of Zirconium - Diamond Interfaces
P.K. Baumann
S.P. Bozeman
R.J. Nemanich
OriginalPaper 15 February 2011 Pages: 143 - 148
Ohmic Contacts to n-Type 6H-SiC Without Post-Annealing
Tokuyuki Teraji
Shiro Hara
Koji Kajimura
OriginalPaper 15 February 2011 Pages: 149 - 154
Photothermally Assisted Dry Etching of GaN
R. T. Leonard
S. M. Bedair
OriginalPaper 15 February 2011 Pages: 157 - 161
Dry Etch Damage in InN, InGaN and InAlN
S. J. Pearton
J. W. Lee
J. R. Lothian
OriginalPaper 15 February 2011 Pages: 163 - 168
Optical Spectroscopy of Dry-Etched GaN-Nanostructures
H. Zull
J. Müller
A. Forchel
OriginalPaper 15 February 2011 Pages: 169 - 173
Photocurrent Sensitivities, Surface Color, and Auger Spectroscopy of Silicon Carbide (SiC) by Photoelectro-Chemical (PEC) Etching
D. M. Collins
G. L. Harris
Naiqun Chen
OriginalPaper 15 February 2011 Pages: 175 - 180
Si Implantation and Annealing of GaN for n-Type Layer Formation
B. Molnar
A. E. Wickenden
M. V. Rao
OriginalPaper 15 February 2011 Pages: 183 - 187
P- and N-Type Implantation Doping of GaN with Ca and O
J. C. Zolper
R. G. Wilson
R. A. Stall
OriginalPaper 15 February 2011 Pages: 189 - 194
Ion Beam Synthesis by Tungsten Implantation into 6H-Silicon Carbide at Elevated Temperatures
Hannes Weishart
W. Matz
W. Skorupa
OriginalPaper 15 February 2011 Pages: 195 - 200
TEM Structure Characterization of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts for n-GaN
S. Ruvimov
Z. Liliental-Weber
H. Morkoç
OriginalPaper 15 February 2011 Pages: 201 - 206
Beta Silicon Carbide PN Junction Diodes
J.C. Coleman
G.L. Harris
D.B. Poker
OriginalPaper 15 February 2011 Pages: 207 - 212
Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals
R. Eckstein
D. Hofmann
A. Winnacker
OriginalPaper 15 February 2011 Pages: 215 - 220
Gallium Nitride Thick Films Grown by Hydride Vapor Phase Epitaxy
R.J. Molnar
P. Maki
N.M. Johnson
OriginalPaper 15 February 2011 Pages: 221 - 226
Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy
S.A. Safvi
N.R. Perkins
T.F. Kuech
OriginalPaper 15 February 2011 Pages: 227 - 232
Thermodynamic Analysis and Growth Characterization of thick GaN films grown by Chloride VPE using GaCl₃/N₂ and NH₃/N₂
Heon Lee
Masaaki Yuri
James S. Harris Jr.
OriginalPaper 15 February 2011 Pages: 233 - 238
High Resolution X-Ray Diffraction Analysis of Gallium Nitride Grown on Sapphire by Halide Vapor Phase Epitaxy
R.J. Matyi
D. Zhi
T.F. Kuech
OriginalPaper 15 February 2011 Pages: 239 - 244
Structural Characterization of Thick GaN Films Grown by Hydride Vapor Phase Epitaxy
L.T. Romano
R.J. Molnar
P. Maki
OriginalPaper 15 February 2011 Pages: 245 - 250
Silicon Carbide CVD Approaches Industrial Needs
R. Rupp
P. Lanig
D. Stephani
OriginalPaper 15 February 2011 Pages: 253 - 263
Kinetics Approach to the Growth of Cubic Boron Nitride
C. A. Taylor II
Roy Clarke
OriginalPaper 15 February 2011 Pages: 265 - 273
Nucleation and Growth of Oriented Diamond Films on Nickel Substrates
P.C. Yang
W. Liu
Z. Sitar
OriginalPaper 15 February 2011 Pages: 281 - 286
Nucleation and Growth of Gallium Nitride Films on Si and Sapphire Substrates Using Buffer Layers
N.R. Perkins
M.N. Horton
T.F. Kuech
OriginalPaper 15 February 2011 Pages: 287 - 292
Seeding with a Diamond Suspension for Growth of Smooth Polycrystalline Diamond Surfaces
I. St. Omer
T. Stacy
E. J. Charlson
OriginalPaper 15 February 2011 Pages: 293 - 298
Properties of Tetrahedral Amorphous Carbon Deposited by a Filtered Cathodic Vacuum Arc
M Chhowalla
C W Chen
W I Milne
OriginalPaper 15 February 2011 Pages: 299 - 304
X-Ray Diffraction Analysis of Strain and Mosaic Structure in (001) Oriented Homoepitaxial Diamond Films
W. Brock Alexander
Pehr E. Pehrsson
James E. Butler
OriginalPaper 15 February 2011 Pages: 305 - 310
TEM and PL characterisation of MBE-grown epitaxial GaN/GaAs
Yan Xin
P.D. Brown
J.W. Orton
OriginalPaper 15 February 2011 Pages: 311 - 316
Chemical Beam Epitaxy of GAN_xJ_x−1 Using a N Radical Beam Source
N. Y. Li
D. H. Tomich
C. W. Tu
OriginalPaper 15 February 2011 Pages: 317 - 322
Improved Aluminum Nitride Thin Films Grown by MOCVD from Tritertiarybutylaluminum and Ammonia
T. Metzger
E. Born
M. Stutzmann
OriginalPaper 15 February 2011 Pages: 323 - 328
Properties of Homoepitaxially MBE-Grown GaN
T. Suski
J. Krueger
H.I. Helava
OriginalPaper 15 February 2011 Pages: 329 - 334
Lattice-Matched InAsN(X=0.38) on GaAs Grown by Molecular Beam Epitaxy
Y.C. Kao
T.P.E. Broekaert
G.B. Stringfellow
OriginalPaper 15 February 2011 Pages: 335 - 340

Volume 423, Issue 1

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