Volume 421, Issue 1

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December 1996

Symposium D — Compound Semiconductor Electronics and Photonics

Issue Editors:

S.J. Pearton,
F. Ren,
R.J. Shul,
C.-S. Wu

60 articles in this issue

Gas-Source Molecular Beam Epitaxy of Electronic Devices
E.A. Beam III
B. Brar
A.C. Seabaugh
OriginalPaper 10 February 2011 Pages: 3 - 13
Selective-Area Epitaxy and In-Situ Etching of GaAs Using Tris-Dimethylaminoarsenic by Chemical Beam Epitaxy
N. Y. Li
C. W. Tu
OriginalPaper 10 February 2011 Pages: 15 - 20
Intrinsic N-Type Modulation Doping in InP-Based Heterostructures
W.M. Chen
I.A. Buyanova
C.W. Tu
OriginalPaper 10 February 2011 Pages: 21 - 26
Oxygen-Related Defects in High Purity MOVPE AlGaAs
J.M. Ryan
T.F. Kuech
K.L. Bray
OriginalPaper 10 February 2011 Pages: 27 - 32
The Growth and Doping of Al(As)Sb by Metal-Organic Chemical Vapor Deposition
R. M. Biefeld
A. A. Allerman
S. R. Kurtz
OriginalPaper 10 February 2011 Pages: 33 - 38
Structural Characterization of InAs/(GaIn)Sb Superlattices for IR Optoelectronics
J. Wagner
J. Schmitz
P. Koidl
OriginalPaper 10 February 2011 Pages: 39 - 44
High Quality In_1-x(Ga_x)As_yP_1-y/InP Compressive strained Quantum Well Structures Grown by LP-MOCVD
J. T. Zhu
A. R. Clawson
P. K. L. Yu
OriginalPaper 10 February 2011 Pages: 45 - 50
Selective Oxidation of Buried AlGaAs for Fabrication of Vertical-Cavity Lasers
Kent D. Choquette
K. M. Geib
Robert Hull
OriginalPaper 10 February 2011 Pages: 53 - 61
Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes
D.I. Babic
V. Jayaraman
S. Denbaars
OriginalPaper 10 February 2011 Pages: 63 - 74
Stabilization of Transverse Mode Emission in Vertical-Cavity Surface-Emitting Lasers by Deposition of High Refractive Index Amorphous GaAs
Hyo-Hoon Park
Byueng-Su Yoo
Yong Hee Lee
OriginalPaper 10 February 2011 Pages: 75 - 80
Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy
M. Passlack
M. Hong
OriginalPaper 10 February 2011 Pages: 81 - 92
Orientation Dependence of Surface Passivation for Semi-Insulating GaAs
I.P. Koutzarov
C.H. Edirisinghe
L. Rodriguez-Fernandez
OriginalPaper 10 February 2011 Pages: 93 - 98
Surface Stabilization of InP Using CdS Thin Films
A. Davis
H.M. Dauplaise
J.P. Lorenzo
OriginalPaper 10 February 2011 Pages: 99 - 104
On the investigation of power and reliability performance of pseudomorphic AlGaAs/InGaAs HEMT’s
G.P. Li
Y.C. Chou
B.J. Tromberg
OriginalPaper 10 February 2011 Pages: 107 - 118
Finite Element Calculations to Optimize the Design of a Stressor for Strained Induced Quantum Wires and Quantum Dots in GaAs
K. Pinardi
S. C. Jain
H. E. Maes
OriginalPaper 10 February 2011 Pages: 119 - 124
Band-Structure Engineering in Novel Optoelectronic Devices
H. Shen
M. Dutta
OriginalPaper 10 February 2011 Pages: 125 - 131
3D Arrays of Quantum Dots for Laser Applications
N.N. Ledentsov
J. Böhrer
S.S. Ruvimov
OriginalPaper 10 February 2011 Pages: 133 - 138
Synthesis of GaAs Nano-Particles by Digital rf-sputtering
M. Hirasawa
N. Ichikawa
H. Komiyama
OriginalPaper 10 February 2011 Pages: 139 - 144
Lead Sulphide Quantum-Sized Particles with Absorption Band Onset in the Near Infra Red
J.C. Bhat
T. Krishnakumar
P.J. Dobson
OriginalPaper 10 February 2011 Pages: 145 - 150
Dry Etching of SiC for Advanced Device Applications
J. R. Flemish
K. Xie
G. F. McLane
OriginalPaper 10 February 2011 Pages: 153 - 164
Cleaved Facets in GaN by Wafer Fusion of GaN to InP
R. K. Sink
S. Keller
J. E. Bowers
OriginalPaper 10 February 2011 Pages: 165 - 170
Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers
M. Suzuki
T. Uenoyama
OriginalPaper 10 February 2011 Pages: 171 - 182
Studies of Degradation in Nichia AlGaN/InGaN/GaN Blue Light Emitting Diodes Under Close to Normal Operating Conditions
M. Osiński
D. L. Barton
B. S. Phillips
OriginalPaper 10 February 2011 Pages: 183 - 188
Photoluminescence Study of Chloride VPE-Grown GaN
Tetsuzo Ueda
Masaaki Yuri
Takaaki Baba
OriginalPaper 10 February 2011 Pages: 189 - 194
Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia
M. Yuri
T. Ueda
J.S. Harris Jr.
OriginalPaper 10 February 2011 Pages: 195 - 200
Comparison of n- and p-Type InGaAs/InP Quantum Well Infrared Photodetectors
D.K. Sengupta
J.I. Malin
H.C. Liu
OriginalPaper 10 February 2011 Pages: 203 - 208
Ion Implantation for High Performance III–V Jfets and Hfets
J. C. Zolper
A. G. Baca
J. F. Klem
OriginalPaper 10 February 2011 Pages: 209 - 219
Characterization of the Solid-Phase Epitaxial Growth of Amorphized GaAs with In-Situ Electron Microscopy
K. B. Belay
M. C. Ridgway
D. J. Llewellyn
OriginalPaper 10 February 2011 Pages: 221 - 226
Complementary Hfet Technology for Low-Power Mixed-Mode Applications
A. G. Baca c]agbaca@sandia.gov
M. E. Sherwin
M. J. Hafich
OriginalPaper 10 February 2011 Pages: 227 - 237
Damage Introduction in InGaP and AlGaAs by Electron Cyclotron Resonance Ar Plasmas
J. W. Lee
S. J. Pearton
F. Ren
OriginalPaper 10 February 2011 Pages: 239 - 244
ECR Etching of GaP, GaAs, InP, and InGaAs in Cl₂/Ar, Cl₂/N₂, BCl₃/Ar, and BC1₃/N₂
R. J. Shul
A. G. Baca
F. Ren
OriginalPaper 10 February 2011 Pages: 245 - 250
Electron Cyclotron Resonance Etching of SiC in SF₆/O₂ And NF₃/O₂ Plasmas
F. Ren
J. M. Grow
J. R. Flemish
OriginalPaper 10 February 2011 Pages: 251 - 255
Interactions at Metal/InP Interfaces Formed at 300K and 77K
J.W. Palmer
W.A. Anderson
H. Hardtdegen
OriginalPaper 10 February 2011 Pages: 257 - 262
Investigation of Deep-Level Defects in 10 MeV Electrons Irradiated SI-GaAs
Fengmei Wu
Zhouying Zhao
Haifeng Li
OriginalPaper 10 February 2011 Pages: 263 - 268
A Study of Annealing Behavior of EL2 and EL6 groups in SI-GaAs
Wu Fengmei
Zhao Zhouying
OriginalPaper 10 February 2011 Pages: 269 - 274
The Electric Field Measuring by Phase Selective Photoreflectance
J. S. Hwang
W. Y. Chou
H. Shen
OriginalPaper 10 February 2011 Pages: 275 - 280
Growth and Characterization of GaAs Epitaxial Layers by MOCVD
Mantu Kumar Hudait
Prasanta Modak
S.B. Kxupanidhi
OriginalPaper 10 February 2011 Pages: 281 - 286
Formation of New Semiconducting Ge-Si-Fe Alloy on Si(100) and Its Optical Properties
H. Chen
P. Han
Y.D. Zheng
OriginalPaper 10 February 2011 Pages: 287 - 291
A Study of Low-Temperature Grown GaP by Gas-Source Molecular Beam Epitaxy
W. G. Bi
X. B. Mei
R. Hull
OriginalPaper 10 February 2011 Pages: 293 - 298
Atomic Force Microscope Chemically Induced Direct Processing
B. N. Shimbo
S. Komarov
J. S. Harris Jr.
OriginalPaper 10 February 2011 Pages: 299 - 301
C1₂-Based ECR Etching of InGaP, AlInP and AlGaP
J. Hong
J. W. Lee
F. Ren
OriginalPaper 10 February 2011 Pages: 303 - 308
Plasma Chemistries for Dry Etching GaN, AIN, InGaN and InAIN
S. J. Pearton
C. B. Vartuli
F. Ren
OriginalPaper 10 February 2011 Pages: 309 - 314
Dry Etching of InGaP and AlInP in CH₄H₂/Ar
J. W. Lee
S. J. Pearton
F. Ren
OriginalPaper 10 February 2011 Pages: 315 - 320
Passivation of Carbon Doping in InGaAs During ECR-CVD of SiNx
F. Ren
R. A. Hamm
J. R. Lothian
OriginalPaper 10 February 2011 Pages: 321 - 325
Movpe of InP and GaAs Based Optoelectronic Materials in a Multiwafer Production Reactor Using TBA and TBP Exclusively
D. Schmitz
G. Lengeling
H. Jürgensen
OriginalPaper 10 February 2011 Pages: 327 - 333
MBE Growth and Properties of HgCdTe Long Wave and Very Long Wave Infrared Detectors
R. D. Rajavel
O.K. Wu
S.M. Johnson
OriginalPaper 10 February 2011 Pages: 335 - 340
Polarization Control of Vertical-Cavity Surface-Emitting Lasers by Tilted-Etching of Cavity
Hye Yong Chu
Byueng-Su Yoo
Hyo-Hoon Park
OriginalPaper 10 February 2011 Pages: 341 - 346
Properties of H, O And C In GaN
S. J. Pearton
C. R. Abernathy
J. C. Zolper
OriginalPaper 10 February 2011 Pages: 347 - 353
Long Wavelength Shifting and Broadening of Quantum Well Infrared Photodetector Response via Rapid Thermal Annealing
D.K. Sengupta
W. Fang
G. E. Stillman
OriginalPaper 10 February 2011 Pages: 355 - 360
The Effects of Base Dopant Outdiffusion on Low Frequency Noise Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors
Y.C. Chou
G.P. Li
C.S. Wu
OriginalPaper 10 February 2011 Pages: 361 - 366

Volume 421, Issue 1

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