Volume 417, Issue 1

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December 1995

Symposium EE — Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled …

Issue Editors:

Eric D. Jones,
Angelo Mascarenhas,
Pierre Petroff

63 articles in this issue

Dependence of Optical Properties of Semiconductor Alloys on Long Range Order, Strain and Pressure
Su-Huai Wei
Alberto Franceschetti
Alex Zunger
OriginalPaper 10 February 2011 Pages: 3 - 17
Optical Properties of Ordered GaInP
P. Ernst
C. Geng
A. Mascarenhas
OriginalPaper 10 February 2011 Pages: 19 - 30
Atomic Ordering of III-V Alloy Semiconductors Grown on (110)InP and its Influence on Electron Mobility
O. Ueda
OriginalPaper 10 February 2011 Pages: 31 - 42
Theory of Surface Dimerization-Induced Ordering in GaInP Alloys
S. B. Zhang
Sverre Froyen
Alex Zunger
OriginalPaper 10 February 2011 Pages: 43 - 48
Ordering in Ga_xIn_1−xAs_yP_1−y Detected by Diffraction Methods
I. Rechenberg
A. Oster
M. Weyers
OriginalPaper 10 February 2011 Pages: 49 - 54
Determination of the Order Parameter by Quantitative TEM Techniques
Michael H. Bode
S.P. Ahrenkiel
J. Olson
OriginalPaper 10 February 2011 Pages: 55 - 60
A Polarization Study Of Ordered GaInP₂
Yong Zhang
P. Ernst
H. Schweizer
OriginalPaper 10 February 2011 Pages: 61 - 66
Post Epitaxial Disordering of CuPt_B ordered AlGaInP/GaInP for Microstructuring
M. Bukard
A. Englert
H. Schweizer
OriginalPaper 10 February 2011 Pages: 67 - 72
Magnetoluminescence Studies in Ordered InGaP₂
E. D. Jones
R. P. Schneider Jr.
A. Mascarenhas
OriginalPaper 10 February 2011 Pages: 73 - 78
Ballistic-Electron-Emission Microscopy (BEEM) Studies of GaInP/GaAs Heterostructures
J. J. O'Shea
C. M. Reaves
E. D. Jones
OriginalPaper 10 February 2011 Pages: 79 - 83
Energy Up-Conversion at GaAs-GaInP₂ and GaAs-AlGaInP₂ Interfaces Caused by Cold Auger Processes
F.A.J.M. Driessen
H.M. Cheong
A. Mascarenhas
OriginalPaper 10 February 2011 Pages: 85 - 90
Comparative Study on Three Types of Ordered Structures (TP-A, CuPt-A, CuPt-B) in AlInAs, GaInAs, AlInP, and GaInP — Bonding Energy Difference Effects —
A. Gomyo
T. Suzuki
I. Hino
OriginalPaper 10 February 2011 Pages: 91 - 96
Effects of Birefringence in Ordered GaInP/AlGaInP Lasers
A. Moritz
R. Wirth
A. Hangleiter
OriginalPaper 10 February 2011 Pages: 97 - 102
Prediction of New Fingerprints of Ordering in GaInP₂ Alloys
Alberto Franceschetti
Su-Huai Wei
Alex Zunger
OriginalPaper 10 February 2011 Pages: 103 - 108
Self-Assembled InP/GaInP Quantum Dot Lasers
A. Moritz
R. Wirth
A. Hangleiter
OriginalPaper 10 February 2011 Pages: 111 - 115
Vertically-Stacked InAs Islands between GaAs Barriers Grown by Chemical Beam Epitaxy
Mark Miller
Søren Jeppesen
Lars Samuelson
OriginalPaper 10 February 2011 Pages: 117 - 122
Aerotaxy: A New Route to Formation of GaAs Nanocrystals from Ga Droplets
Lars Samuelson
Knut Deppert
Jan-Olle Malm
OriginalPaper 10 February 2011 Pages: 123 - 128
Growth of GaAs/AIGaAs Quantum Dots Using Self-Organized InP Stressors
M.C. Hanna
Z.H. Lu
A.J. Nozik
OriginalPaper 10 February 2011 Pages: 129 - 134
Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs
N.A. Bert
V.V. Chaldyshev
B.R. Semyagin
OriginalPaper 10 February 2011 Pages: 135 - 140
Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications
V.M. Ustinov
A.Yu. Egorov
Zh.I. Alferov
OriginalPaper 10 February 2011 Pages: 141 - 146
Growth and Characterization of BRS GaInAsP-GaAs Laser Emitting at 0.8µm by Gas-Source Molecular Beam Epitaxy
C. Jelen
S. Slivken
M. Razeghi
OriginalPaper 10 February 2011 Pages: 147 - 152
Pattern Formation by Changing V/III Ratio During Growth of GaAs by MOVPE
Shashi Paul
S.A. Shivashankar
OriginalPaper 10 February 2011 Pages: 153 - 158
Optical Study of Carrier Transfer in Strain-induced Quantum Dots
Yitong Gu
M.D. Sturge
J.P. Harbison
OriginalPaper 10 February 2011 Pages: 159 - 163
Photomodulation spectroscopy of thin Ge films formed by molecular beam epitaxy on Si (111)
K. L. Stokes
P. Deelman
P. D. Persans
OriginalPaper 10 February 2011 Pages: 165 - 168
Growth Dynamics and Exciton Localization in Strained CdSe Quantum Structures
F.S. Flack
A. Hunt
M. Al Jassim
OriginalPaper 10 February 2011 Pages: 169 - 174
Evidence for Local Atomic Strain in Pb-DOPED Heavy-Metal Fluoride Glasses
L. Niu
A.R. Kortan
P.H. Citrin
OriginalPaper 10 February 2011 Pages: 175 - 180
Sensitivity of Nanocrystalline Copper Sulfide/Cadmium Sulfide Heterojunction in Near-IR Region
M.V. Artemyev
D.V. Sviridov
A.M. Maljarevich
OriginalPaper 10 February 2011 Pages: 181 - 185
Silicon (Oxy)Nitride Thin Films Deposited by LPCVD from SiCl₂H₂-NH₃-N₂O Mixtures of Variable Composition
D. Davazoglou
A.A. Iliadis
OriginalPaper 10 February 2011 Pages: 187 - 192
Growth Rate Enhancement in Selective Area MOVPE
Takuya Fujii
Mitsuru Ekawa
Toshiyuki Tanahashi
OriginalPaper 10 February 2011 Pages: 193 - 198
Does the 1.25 eV Luminescence of Coherently Strained InGaAs Insertions in GaAs Originate from Quantum Dots?
J.-L. Lazzari
R. Klann
K. H. Ploog
OriginalPaper 10 February 2011 Pages: 199 - 204
Compositional Ordering in GaInP for Heterostructure Formation
G.B. Stringfellow
L.C. Su
Y. Hosokawa
OriginalPaper 10 February 2011 Pages: 207 - 219
Growth and Capacitance Spectroscopy of Self Assembled Quantum Dots
G. Medeiros-Ribeiro
K.H. Schmidt
P. M. Petroff
OriginalPaper 10 February 2011 Pages: 221 - 226
Temperature-Dependent Strain Relaxation and Islanding of Ge/Si(111)
P.W. Deelman
L.J. Schowalter
T. Thundat
OriginalPaper 10 February 2011 Pages: 227 - 232
Strain Effects in InP Dots in between Barriers of GaInP
Mats-Erik Pistol
Srinivasan Anand
Werner Seifert
OriginalPaper 10 February 2011 Pages: 233 - 238
Formation of Quantum Wires by Strain-Induced Lateral-Layer Ordering Process: Growth Mechanism and Device Applications
K. Y. Cheng
K. C. Hsieh
OriginalPaper 10 February 2011 Pages: 241 - 252
Compositional Modulation and its Optoelectric Properties of Zn(S,Se,Te) Crystals Grown by Hydrogen Radical-Enhanced CVD
Hiroyuki Fujiwara
Toshihiro Ii
Isamu Shimizu
OriginalPaper 10 February 2011 Pages: 253 - 258
Method for Calculation of Dielectric Properties of Modulated Semiconducting Structures
V.Yu. Mirovitskii
O.Yu. Mashtakov
OriginalPaper 10 February 2011 Pages: 259 - 264
Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates
F. Peiró
A. Cornet
A. Georgakilas
OriginalPaper 10 February 2011 Pages: 265 - 270
AlInAs band Gap Modulations Observed by TEM and Optical Measurements
E. Bearzi
T. Benyattou
M. Pitaval
OriginalPaper 10 February 2011 Pages: 271 - 275
The Effect of Composition Modification on the Optical Polarization Independence in Semiconductor Strain Quantum Wells
Wallace C.H. Choy
Hao Feng
E. Herbert Li
OriginalPaper 10 February 2011 Pages: 277 - 282
Effect of interdiffusion on the subbands in an In_0.65Gs_0.35As/GaAs multiple-quantum well structure on GaAs Substrate at 1.55µm operation wavelength
M.C.Y. Chan
E. Herbert Li
K.S. Chan
OriginalPaper 10 February 2011 Pages: 283 - 288
The Optical Properties of InGaAs(P)/InP under Group V Sublattice Two-Phase Interdiffusion
E. Herbert Li
Joseph Micallef
W.C. Shui
OriginalPaper 10 February 2011 Pages: 289 - 294
Structural Characterization of Composition-Modulated ZnSe_1−xTe_x Epitaxial Films
S. P. Ahrenkiel
M. H. Bode
J. K. Furdyna
OriginalPaper 10 February 2011 Pages: 295 - 300
Selective Growth of GaP on Si by Metal Organic Vapor Phase Epitaxy
J.S. Lee
J. Salzman
J.M. Ballantyne
OriginalPaper 10 February 2011 Pages: 301 - 305
Thermodynamics and Diffusion of Free Trions in Mixed Type GaAs/AlAs Quantum Wells
H.W. Yoon
Arza Ron
L. N. Pfeiffer
OriginalPaper 10 February 2011 Pages: 309 - 314
Growth of Uniform InGaAs Bulk Crystal by Multi-Component Zone Melting Method
T. Kusunoki
K. Nakajima
T. Suzuki
OriginalPaper 10 February 2011 Pages: 315 - 318
The formation of radiative defects at GaAs/GaInP interface
Kazuo Uchida
Takayuki Arai
Koh Matsumoto
OriginalPaper 10 February 2011 Pages: 319 - 324
Semiconductor Superlattices Studied by Grazing X-Ray Scattering and Diffraction
Z.H. Ming
Y.L. Soo
M. Hafich
OriginalPaper 10 February 2011 Pages: 325 - 330
Optimal growth of InGaAs/InAlAs distributed Bragg reflectors lattice-matched on InP substrates
S.W. Choi
J.H. Lee
B. Lee
OriginalPaper 10 February 2011 Pages: 331 - 336
Molecular Beam Epitaxial Growth of ZnSe, ZnSSe and ZnMnSSe Layers on GaAs Substrates for Blue-Green Laser Structures
Y. P. Chen
M. Saginur
S.-C.Y. Tsen
OriginalPaper 10 February 2011 Pages: 337 - 344

Volume 417, Issue 1

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