Volume 386, Issue 1

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December 1995

Symposium O — Ultraclean Semiconductor Processing Technology and Surface

Issue Editors:

M. Liehr,
M. Hirose,
M. Heyns,
H. Parks

55 articles in this issue

Recent Advances in Wet Processing Technology and Science
Steven Verhaverbeke
Rochdi Messoussi
Tadahiro Ohmi
OriginalPaper 15 February 2011 Pages: 3 - 12
Studies of the Relationship between Megasonics, Surface Etching, and Particle Removal in SC-1 Solutions
S. L. Cohen
D. Rath
M. Liehr
OriginalPaper 15 February 2011 Pages: 13 - 19
A study of Cleaning Performance and Mechanisms in Dilute SC-1 Processing
P. J. Resnick
C. L. J. Adkins
N. C. Korbe
OriginalPaper 15 February 2011 Pages: 21 - 26
Selective one-step Chemical Etching of the Silicon Nitride/Silicon PBL stack for 0.5μm device Fabrication
David Ziger
Susan Vitkavage
Michael Hughes
OriginalPaper 15 February 2011 Pages: 27 - 33
Computational Fluid Dynamic Modeling and Flow Visualization of an Enclosed Wet Processing System
Steven T. Bay
Christopher F. McConnell
Jayathi Murthi
OriginalPaper 15 February 2011 Pages: 35 - 46
Surface Photovoltage Monitoring of Silicon Surface Native and Chemical Oxides following Wafer Cleaning and Rinsing Operations
John J. Rosato
R. Mark Hall
Taura D. Jarvis
OriginalPaper 15 February 2011 Pages: 47 - 54
Determination of Rinsing Parameters using a Wafer Gap Conductivity Cell in Wet Cleaning Tools
P. G. Lindquist
R. N. Walters
J. J. Rosato
OriginalPaper 15 February 2011 Pages: 55 - 61
Electrochemical Aspects of Etching and Passivation of Silicon in Alkaline Solutions
Joong S. Jeon
Srini Raghavan
OriginalPaper 15 February 2011 Pages: 63 - 68
Removal of Metallic Contaminants and Native Oxide from Silicon Wafer Surface by Pure Water Containing a Little Dissolved Oxygen
Yuka Hayami
Miki T. Suzuki
Shuzo Fujimura
OriginalPaper 15 February 2011 Pages: 69 - 74
Investigation of Pre-Tungsten Silicide Deposition Wet Chemical Processing
A. Philipossian
M. Moinpour
V. H. C. Watt
OriginalPaper 15 February 2011 Pages: 75 - 82
Characterization of Defects Produced in TEOS Thin Films due to Chemical-Mechanical Polishing (CMP)
F. B. Kaufman
S. A. Cohen
M. A. Jaso
OriginalPaper 15 February 2011 Pages: 85 - 95
Impact of Chemomechanical Polishing on the Chemical Composition and Morphology of the Silicon Surface
Hermann Fusstetrer
Anton Schnegg
Peter Wagner
OriginalPaper 15 February 2011 Pages: 97 - 108
Post-CMP Cleaning of W and SiO₂: A Model Study
Igor J. Malik
Jackie Zhang
Chilkunda Rajhunath
OriginalPaper 15 February 2011 Pages: 109 - 114
Cleaning of SiO₂: Differences Between Thermal and Deposited Oxides
M. Ravkin
J. J. Farber
W. C. Krusell
OriginalPaper 15 February 2011 Pages: 115 - 120
Post CMP Cleaning Using Ice Scrubber Cleaning
N. Takenaka
Y. Satoh
K. Sakiyama
OriginalPaper 15 February 2011 Pages: 121 - 125
Effect of SC-1 Process Parameters on Particle Removal and Surface Metallic Contamination
R. Mark Hall
John J. Rosato
Paul G. Lindquist
OriginalPaper 15 February 2011 Pages: 127 - 134
Effects of SC-1 Dilution and Temperature Variations on Etch Rate and Surface Haze
K. K. Christenson
S. M. Smith
OriginalPaper 15 February 2011 Pages: 135 - 141
Direct Surface Analysis of Organic Contamination for Semiconductor Related Materials
J. Lee
R. W. Odom
P. M. Lindley
OriginalPaper 15 February 2011 Pages: 143 - 149
Deposition of Ca⁺, Na⁺, Al⁺, K⁺ on Single-Crystal Si From DIH₂0: NH₄0H: H₂0₂ and DIH₂0: HCL: H₂0₂ as Analyzed by ToF-SIMS and SPV
Damon Debusk
John Lowell
Fraser Reich
OriginalPaper 15 February 2011 Pages: 151 - 156
SurfaceSIMS, Secondary Ion Mass Spectrometry Using Oxygen Flooding: A Powerful Tool for Monitoring Surface Metal Contamination on Silicon Wafers
Stephen P. Smith
Larry Wang
Victor K. F. Chia
OriginalPaper 15 February 2011 Pages: 157 - 162
Determination of Organic Contamination From Polymeric Construction Materials for Semiconductor Technology
Klaus J. Budde
OriginalPaper 15 February 2011 Pages: 165 - 176
Chemical Stability of SC1-Cleaned Hydrogen Terminated Si(100) Surfaces
C. H. Bjorkman
H. Nishimura
M. Hirose
OriginalPaper 15 February 2011 Pages: 177 - 182
Outplating of Metallic Contaminants on Silicon Wafers From Diluted Acid Solutions
A. L. P. Rotondaro
T. Q. Hurd
C. Claeys
OriginalPaper 15 February 2011 Pages: 183 - 188
Submicron, Noble Metal Particle Reference Standards: A Proposal
R. S. Hockett
Angela Y. Craig
Diem Le
OriginalPaper 15 February 2011 Pages: 189 - 193
Adsorption and Desorption of Contaminant Metals on Si Wafer Surface in SC1 Solution
G. Maeda
I. Takahashi
T. Shingyouji
OriginalPaper 15 February 2011 Pages: 195 - 200
Iron Deposition From SC-1 on Silicon Wafer Surfaces
S. Dhanda
C. R. Helms
M. Tran
OriginalPaper 15 February 2011 Pages: 201 - 206
Measuring Diffusion Lengths in Epitaxial Silicon by Surface Photovoltage
John Lowell
Valerie Wenner
Damon Debusk
OriginalPaper 15 February 2011 Pages: 207 - 212
Interfacial Defects Induced by Silicidation and Effects of H-Termination at Metal/Silicon Contacts
Shigeaki Zaima
Yukio Yasuda
OriginalPaper 15 February 2011 Pages: 215 - 226
Time-Dependent Dielectric Breakdown in Thin Intrinsic SiO₂ Films
J. S. Suehle
P. Chaparala
OriginalPaper 15 February 2011 Pages: 227 - 235
New Method to Characterize Thin Oxide Reliability
Heng-Chih Lin
J. P. Snyder
C. R. Helms
OriginalPaper 15 February 2011 Pages: 237 - 242
Controlled Nitrogen-Atom Incorporation at Si-SiO₂ Interfaces in Mis Devices
David R. Lee
Christopher G. Parker
Gerald Lucovsky
OriginalPaper 15 February 2011 Pages: 243 - 248
Valence Band Alignment of Ultra-Thin SiO₂/Si Interfaces As Determined By High Resolution X-Ray Photoelectron Spectroscopy
J. L. Alay
M. Fukuda
M. Hirose
OriginalPaper 15 February 2011 Pages: 249 - 254
Properties of Gate-Quality SiO₂ Films Prepared by Electron Cyclotron Resonance Chemical Vapour Deposition in an Ultrahigh Vacuum Processing System
Y. Tao
D. Landheer
T. Quance
OriginalPaper 15 February 2011 Pages: 255 - 260
Advanced Technology Processing and State-of-the-art Solutions to Cleaning, Contamination Control, and Integration Problems
W. W. Abadeer
A. LeBlanc
R. Ludeke
OriginalPaper 15 February 2011 Pages: 261 - 269
Reduced-Pressure UV Photo-Oxidation of Organic Contaminants on Si Surfaces
Satish Bedge
H. Henry Lamb
OriginalPaper 15 February 2011 Pages: 273 - 278
Correlation of Roughness and Device Properties for Hydrogen Plasma Cleaning of Si(100) Prior to Gate Oxidation
J. S. Montgomery
J. P. Barnak
R. J. Nemanich
OriginalPaper 15 February 2011 Pages: 279 - 284
Rie Passivation Layer Removal by Remote H-Plasma and H₂/SiH₄ Plasma Processing
Hong Ying
J. P. Barnak
R. J. Nemanich
OriginalPaper 15 February 2011 Pages: 285 - 290
Monitoring of the Surface Species on Silicon After Chemical Cleaning by FTIR Spectroscopy
Chan-Hwa Chung
Chang-Koo Kim
Sang Heup Moon
OriginalPaper 15 February 2011 Pages: 291 - 296
Effects of UV/O₃ and SC1 Steps for the HF Last Silicon Wafer Cleaning
Hyeongtag Jeon
Hyungbok Choi
S. D. Jung
OriginalPaper 15 February 2011 Pages: 297 - 302
Wafer Cleaning Influence on the Roughness of the Si/SiO₂ Interface
A. Munkholm
S. Brennan
Jon P. Goodbread
OriginalPaper 15 February 2011 Pages: 303 - 307
In Situ Auger Spectroscopy Investigation of InP Surfaces Treated in RF Hydrogen and Hydrogen/Methane/Argon Plasmas
J. E. Parmeter
R. J. Shul
P. A. Miller
OriginalPaper 15 February 2011 Pages: 309 - 314
Study on Sulfur Passivation for CuInSe₂ Polycrystalline Thin Film With (NH₄)₂S_X Solution
Y. H. Cheng
B. H. Tseng
H. L. Hwang
OriginalPaper 15 February 2011 Pages: 315 - 320
Pre-Gate Oxidation Cleaning of Silicon Wafer by Electric Arc Plasma Jet Treatment
G. Ya. Pavlov
OriginalPaper 15 February 2011 Pages: 321 - 325
Surface Modification of Zn_xCd_1-x Te Due to Low Energy Ion Sputtering
S. Vijayalakshmi
K. T. Chen
W. E. Collins
OriginalPaper 15 February 2011 Pages: 327 - 331
Surface Properties of GaAs Passivated With (NH₄)₂S_x Solution
Kyung-Soo Suh
Hyung-Ho Park
Kyung-Soo Kim
OriginalPaper 15 February 2011 Pages: 333 - 338
Extremely Low Temperature Silicon Liquid Phase Epitaxy
M. Konuma
I. Silier
N. Nagel
OriginalPaper 15 February 2011 Pages: 339 - 344
Device Quality of Hydrogen Plasma Cleaning for Silicon Molecular Beam Epitaxy
W. Hansch
I. Eisele
U. KÖnig
OriginalPaper 15 February 2011 Pages: 345 - 350
Removal of SiO₂ From Si (100) by Remote H₂/SiH₄ Plasma Prior to Epitaxial Growth
J. P. Barnak
H. Ying
R. J. Nemanich
OriginalPaper 15 February 2011 Pages: 351 - 356
Removal of Fluorine From a Si (100) Surface by a Remote RF Hydrogen Plasma
J. P. Barnak
S. King
R. J. Nemanich
OriginalPaper 15 February 2011 Pages: 357 - 362
Preferential Etching of Si(111) and Si(001) in Dilute NH₄F Solutions: as Probed by In Situ STM
Kingo Itaya
Shueh-Lin Yau
Kazutoshi Kaji
OriginalPaper 15 February 2011 Pages: 365 - 370

Volume 386, Issue 1

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