Volume 378, Issue 1

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December 1995

Symposium B — Defect and Impurity-Engineered Semiconductors and Devices

Issue Editors:

I. Akasaki,
S. Ashok,
J. Chevallier,
N. M. Johnson,
B. L. Sopori

155 articles in this issue

Order and Disorder in Semiconductors
Hans J. Queisser
OriginalPaper 26 February 2011 Pages: 3 - 14
Surfaces and Crystal Defects of Silicon
P. Wagner
M. Brohl
U. Lambert
OriginalPaper 26 February 2011 Pages: 17 - 22
The Formation of Defects Degrading Gate Oxide Integrity During CZ-Si Crystal Growth
Y. Tsumori
K. Nakai
T. Nakashizu
OriginalPaper 26 February 2011 Pages: 23 - 28
Analysis of Dislocation Networks and Electronic Properties of Dendritic Web Silicon
S. L. Morelhão
D. L. Meier
S. Mahajan
OriginalPaper 26 February 2011 Pages: 29 - 34
On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon
J. Vanhellemont
A. Kaniava
P. Clauws
OriginalPaper 26 February 2011 Pages: 35 - 40
Characterization of Growth Defects in CdZnTe Single Crystals by Synchrotron White Beam X-ray Topography
H. Chung
B. Raghothamachar
D. C. Gillies
OriginalPaper 26 February 2011 Pages: 41 - 46
Large Persistent Photochromic Effect Due to DX Centers in AlSb Doped with Selenium
P. Becla
A. G. Witt
W. Walukiewicz
OriginalPaper 26 February 2011 Pages: 47 - 52
Control of Oxygen Content in Heavily Sb-Doped CZ Si Crystal by Adjusting Ambient Pressure
Koji Izunome
Xinming Huang
Shigeyuki Kimura
OriginalPaper 26 February 2011 Pages: 53 - 58
Photodiffractive Characterization of Growth-Defects in GaAs
K. Jarasiunas
M. Sudzius
J. Vaitkus
OriginalPaper 26 February 2011 Pages: 59 - 64
Influence of Electric Field and Temperature on Magnetic Field Induced Prolonged Changes of Electric Parameters of Silicon Systems
Vladimir M. Maslovsky
OriginalPaper 26 February 2011 Pages: 65 - 70
Electrical and Structural Properties of MeV Si⁺ Ion Implantation in Silicon
Aditya Agarwal
S. Koveshnikov
G. A. Rozgonyi
OriginalPaper 26 February 2011 Pages: 71 - 76
Investigation of Resistivity Distributions in CdTe Crystals by Time Dependent Charge Measurements (TDCM)
C. Eiche
W. Joerger
K. W. Benz
OriginalPaper 26 February 2011 Pages: 77 - 82
Scanning Tunneling Microscopy Studies of GaAs_1-xP_x Single Crystals
X. Liu
E. R. Weber
T. Slupinski
OriginalPaper 26 February 2011 Pages: 83 - 88
Study of Oxygen Diffusion and Clustering in Silicon Using an Empirical Interatomic Potential
Z. Jiang
R. A. Brown
OriginalPaper 26 February 2011 Pages: 89 - 94
Computation of the Onset of Point Defect Aggregation in Crystalline Silicon Using an Empirical Interatomic Potential
T. Sinno
R. A. Brown
OriginalPaper 26 February 2011 Pages: 95 - 100
Numerical Simulation of Point Defect Distributions in a Growing Czochralski Silicon Crystal in Response to an Abrupt Change in the Growth Conditions
W. Wijaranakula
Q. S. Zhang
H. Yamagishi
OriginalPaper 26 February 2011 Pages: 101 - 106
Deviation from Stoichiometry and Lattice Properties of Semiconducting SnTe Phase
E. I. Rogacheva
G. V. Gorne
O. N. Nashchekina
OriginalPaper 26 February 2011 Pages: 107 - 112
Low Energy Ion Implantation of as During Si-MBE
E. J. H. Collart
D. J. Gravesteijn
W. J. Kersten
OriginalPaper 26 February 2011 Pages: 115 - 120
Nucleation & Growth of Defects in SOI Materials
G. C. M. Silvestre
R. A. Moore
B. J. Kennedy
OriginalPaper 26 February 2011 Pages: 121 - 127
Extraction of Elastic Parameters of Heavily Boron-Doped Silicon Layer by Elimination of Misfit Dislocations
Ho-Jun Lee
Chul-Hi Han
Choong-Ki Kim
OriginalPaper 26 February 2011 Pages: 129 - 134
Efficient Nonradiative Recombination Centers in MBE-Grown Si and SiGe/Si Heterostructures
W. M. Chen
I. A. Buyanova
B. Monemar
OriginalPaper 26 February 2011 Pages: 135 - 140
Defect-Engineered Graded GexSi_1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density
G. Kissinger
T. Morgenstern
H. Richter
OriginalPaper 26 February 2011 Pages: 141 - 146
DLTS Study on Annealed Low-Temperature GaAs Layers with An n-I(LT)-n Structure Grown by MBE
Tsai-Cheng Lin
Hiromasa T. Kaibe
Tsugunori Okumura
OriginalPaper 26 February 2011 Pages: 147 - 152
Deep Impurities in AlGaAs Grown by MOCVD Using Different Hydrogen and Nitrogen as Carrier Gases
J. C. Chen
Z. C. Huang
K. J. Lee
OriginalPaper 26 February 2011 Pages: 153 - 157
Atomic Structure of Deep Level Defects in Dimethylaluminum Methoxide-Doped GaAs
Y. Park
M. Skowronski
OriginalPaper 26 February 2011 Pages: 159 - 164
Intentional Defect Incorporation in Metalorganic Vapor Phase Epitaxy Indium Gallium Arsenide by Oxygen Doping
J. W. Huang
T. F. Kuech
OriginalPaper 26 February 2011 Pages: 165 - 170
The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects
P. M. Fauchet
G. W. Wicks
K. B. Ucer
OriginalPaper 26 February 2011 Pages: 171 - 176
Dependence of Sheet Hole Concentrations on Growth Kinetics of a Carbon Doped Electron Beam Heated Graphite Source in GaAs and Al_0.3GaD_0.7As Films Grown by Solid Source MBE
D. L. Sato
F. J. Szalkowski
H. P. Lee
OriginalPaper 26 February 2011 Pages: 177 - 182
Point Defect Supersaturation During Zinc Diffusion into InP
D. Wittorf
W. Jäger
H. Mehrer
OriginalPaper 26 February 2011 Pages: 183 - 188
Low Deep Impurity In_xGa_1-xP Grown by Metalorganic Chemical Vapor Deposition
Z. C. Huang
Bing Yang
J. C. Chen
OriginalPaper 26 February 2011 Pages: 189 - 194
Very Low Deep Level Al_xGa_1−xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition
Z. C. Huang
Bing Yang
J. C. Chen
OriginalPaper 26 February 2011 Pages: 195 - 200
Low-Temperature, Solid-Phase Epitaxial Growth of Amorphized, Non-Stoichiometric GaAs
K. B. Belay
D. L. Llewellyn
M. C. Ridgway
OriginalPaper 26 February 2011 Pages: 201 - 206
Magnetic Circular Dichroism of Low-Temperature-Grown Al_xGa_1-xAs
A. Prasad
X. Liu
J. S. Smith
OriginalPaper 26 February 2011 Pages: 207 - 212
Spectroscopic Ellipsometric Characterization of Low Temperature GaAs
X. Gao
P. G. Snyder
Z. F. Peng
OriginalPaper 26 February 2011 Pages: 213 - 218
Optical Absorptions and EL2-Like Defects in Low Temperature Grown Molecular-Beam-Epitaxial GaAs
S. K. So
M. H. Chan
K. T. Chan
OriginalPaper 26 February 2011 Pages: 219 - 224
Investigation of Free Exciton Properties in GaAs Epitaxial Layer
Wu Fengmei
Shi Yi
Cosmo Carlone
OriginalPaper 26 February 2011 Pages: 225 - 230
Uniformity of Arsenic Dimer and Tetramer Fluxes from a Valved Arsenic Cracking Source in MBE
George A. Patterson
James S. C. Chang
Forrest G. Kellert
OriginalPaper 26 February 2011 Pages: 231 - 236
Dopant-Defect Interactions in II-VI Semiconductors Studied by PAC
Thomas Wichert
OriginalPaper 26 February 2011 Pages: 237 - 248
Growth and Characterization of the Binary Defect Alloy Cu_2-xSe and the Relation to II–VI/I–III–VI Heterojunction Formation
Art J. Nelson
K. Sinha
John Moreland
OriginalPaper 26 February 2011 Pages: 249 - 254
Nonstoichiometric Defects in Semiconductor SnTe Thin Films
O. N. Nashchekina
E. I. Rogacheva
A. I. Fedorenko
OriginalPaper 26 February 2011 Pages: 255 - 260
Transition-Metal Impurity Luminescence in GaAs and its Application to Material Characterization
T. Nishino
OriginalPaper 26 February 2011 Pages: 263 - 272
Transient Diffusion and Gettering of Au and Cu to Cavities in Si
J. Wong-Leung
J. S. Williams
E. Nygren
OriginalPaper 26 February 2011 Pages: 273 - 278
Minority Carrier Diffusion Length Improvement in Czochralski Silicon by Aluminum Gettering
Subhash M. Joshi
Ylrich M. GÖsele
Teh Y. Tan
OriginalPaper 26 February 2011 Pages: 279 - 284
Impurity Gettering in MBE Grown Silicon
A. Nylandsted Larsen
P. KringhØj
S. Yu. Shiryaev
OriginalPaper 26 February 2011 Pages: 285 - 290
Lateral Diffusion and Capture of Iron in P-Type Silicon
Kevin L. Beaman
Aditya Agarwal
George A. Rozgonyi
OriginalPaper 26 February 2011 Pages: 291 - 296
Phosphorus and Aluminum Gettering of Gold in Silicon: Simulation and Optimization Considerations
R. Gafiteanu
U. Gösele
T. Y. Tan
OriginalPaper 26 February 2011 Pages: 297 - 302
A Study of Gettering Efficiency and Stability in Czochralski Silicon
Scott A. McHugo
E. R. Weber
F. G. Kirscht
OriginalPaper 26 February 2011 Pages: 303 - 308
Gettering of Interstitial Iron in P/P⁺ Epitaxial Silicon Wafers
W. Wijaranakula
X. Gao
H. Haddad
OriginalPaper 26 February 2011 Pages: 309 - 314
Characterization of the Damage on the Back Side of Silicon Wafers
S. E. Lindo
K. M. Matney
M. S. Goorsky
OriginalPaper 26 February 2011 Pages: 315 - 320
Mechanism of Iron Gettering by Polycrystalline Silicon Film in P-Type Czochralski (CZ) Silicon
Kamal K. Mishra
OriginalPaper 26 February 2011 Pages: 321 - 326

Volume 378, Issue 1

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