1. Ripple Pyrometry for Rapid Thermal Annealing

   • A. T. Fiory
   • A. K. Nanda

   OriginalPaper 01 December 1994 Pages: 3 - 15

2. Speckle Techniques for Noncontact Temperature Measurement

   • D. Burckel
   • S. H. Zaidi
   • S. R. J. Brueck

   OriginalPaper 01 December 1994 Pages: 17 - 22

3. Temperature Measurement of Metallized Silicon Wafers by Infrared Transmission Using Single- and Double-Pass Geometries

   • C. W. Cullen
   • J. C. Sturm

   OriginalPaper 01 December 1994 Pages: 23 - 28

4. Deposition of Monolayer-Scale Germanium/Silicon Heterostructures by Rapid Thermal Chemical Vapor Deposition

   • A. St. Amour
   • J. C. Sturm

   OriginalPaper 01 December 1994 Pages: 31 - 36

5. Growth and Photoluminescence of Strained < 110 > Si/Si_1−xGe_x/Si Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition

   • C. W. Liu
   • J. C. Sturm
   • D. D. Perovic

   OriginalPaper 01 December 1994 Pages: 37 - 42

6. In-Situ Doped Multi-Layer Epitaxial Structures with Abrupt Doping Transitions by Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition (UHV-RTCVD)

   • Mehmet C. Öztüjrk
   • S. Muhsin
   • Archie Lee

   OriginalPaper 01 December 1994 Pages: 43 - 49

7. Steady-State Versus Rapid Thermal Annealing of Phosphorusimplanted Pseudomorphic Si(100)/Ge_0.12Si_0.88

   • D. Y. C. Lie
   • J. H. Song
   • D. L. Kwong

   OriginalPaper 01 December 1994 Pages: 51 - 56

8. The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

   • Shulin Gu
   • Youdou Zheng
   • J. N. Chen

   OriginalPaper 01 December 1994 Pages: 57 - 62

9. Influence of H₂ on Ge Surface Segregation in Si/SiGe Heterostructures Grown by RTP/VLP-CVD

   • Zhang Rong
   • Huang Hongbin
   • Feng Duan

   OriginalPaper 01 December 1994 Pages: 63 - 68

10. In-Situ Spectroscopic Ellipsometry for the Control of Si based Thin Multi-Layers Grown by UHV-CVD

    • F. Glowacki
    • A. Larre
    • D. Bensahel

    OriginalPaper 01 December 1994 Pages: 69 - 74

11. Giant Magnetoresistance and Structural Study of Permalloy/Silver Multilayers During Rapid Thermal Annealing

    • F. Roozeboom
    • I. Gideonse
    • H. T. Munsters

    OriginalPaper 01 December 1994 Pages: 77 - 84

12. Luminescent Properties of Rapid Thermal Oxidized Porous Silicon

    • Peter Ramm
    • Peter Steiner
    • Walter Lang

    OriginalPaper 01 December 1994 Pages: 85 - 90

13. Rapid Thermal Oxidation for Passivation of Porous Silicon

    • I. BÁrsony
    • J. G. E. Klappe
    • M. Fried

    OriginalPaper 01 December 1994 Pages: 91 - 96

14. Silicide Formation by Rapid Thermal Processing

    • L. J. Chen
    • W. Lur
    • J. M. Liang

    OriginalPaper 01 December 1994 Pages: 99 - 110

15. Response Surface for CMOS Self-Aligned Titanium Silicide Process

    • A. K. Nanda
    • S. Meester
    • C. W. Wilkins

    OriginalPaper 01 December 1994 Pages: 111 - 116

16. Investigation of Titanium Silicide Formation Using Secondary Ion Mass Spectrometry

    • Andrew T. S. Wee
    • Alfred C. H. Huan
    • Royston Hogan

    OriginalPaper 01 December 1994 Pages: 117 - 122

17. Rapid Thermal Chemical Vapor Deposition of Titanium Nitride for Barrier Application

    • B. Fröschle
    • R. Leutenecker
    • P. Ramm

    OriginalPaper 01 December 1994 Pages: 123 - 128

18. The Influence of RTA Heating Rate on the TiSi₂ and Si - TiSi₂ Interface Roughness

    • A. A. M. Lagana
    • M. C. Valente
    • J. J. Santiago-Avilés

    OriginalPaper 01 December 1994 Pages: 129 - 135

19. Study of Arsenic Evolution During RTA of Au-Based Ohmic Contacts to GaAs

    • A. Piotrowska
    • E. Kaminska
    • S. Kwiatkowski

    OriginalPaper 01 December 1994 Pages: 137 - 142

20. Positron Annihilation and X-Ray Photoelectron Spectroscopy Analyses of TiN/Si and TiN/SiO₂/Si Films

    • A. K. Issar
    • S. C. Sharma
    • D. R. Chopra

    OriginalPaper 01 December 1994 Pages: 143 - 148

21. Dielectrics on Silicon Thermally Grown or Annealed in a Nitrogen Rich Environment

    • H. Barry Harrison
    • Andrew Misiura
    • Y. T. Yeow

    OriginalPaper 01 December 1994 Pages: 151 - 161

22. Ultrathin Gate Dielectrics grown in Mixtures of N₂O and O₂ Using Rapid Thermal Oxidation

    • John M. Grant
    • Tzu-Yen Hsieh

    OriginalPaper 01 December 1994 Pages: 163 - 168

23. Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

    • Y. Ma
    • S. V. Hattangady
    • G. Lucovsky

    OriginalPaper 01 December 1994 Pages: 169 - 174

24. Thin Gate Oxide using a New RTO/-N Clusterable Reactor

    • H. Walk
    • L. Deutschmann
    • A. Bauer

    OriginalPaper 01 December 1994 Pages: 175 - 180

25. Rapid Thermal Oxidation of Lightly Doped Silicon in N₂O

    • S. C. Sun
    • L. S. Wang
    • Y. H. Lin

    OriginalPaper 01 December 1994 Pages: 181 - 186

26. Electrical Properties of Stacked RTO/RTCVD Oxides as Gate Dielectrics

    • V. Misra
    • X-L. Xu
    • J. J. Wortman

    OriginalPaper 01 December 1994 Pages: 187 - 193

27. In-Situ Multiprocessing of Ultrathin Silicon Nitride Capacitors for Advanced Dram Cells

    • Randhir P. S. Thakur
    • Rick Hawthorne
    • Rudy Wilhelm

    OriginalPaper 01 December 1994 Pages: 195 - 200

28. Deposition of Oxide Based Advanced Electronic and Optical Materials by Rapid Isothermal Processing (RIP) Assisted Metalorganic Chemical Vapor Deposition (MOCVD)

    • J. Mavoori
    • R. Singh
    • R. Natarajan

    OriginalPaper 01 December 1994 Pages: 201 - 207

29. Ultrathin Gate Dielectric Growth at Reduced Pressure

    • Robert McIntosh
    • Carl Galewski
    • John Grant

    OriginalPaper 01 December 1994 Pages: 209 - 214

30. Homogeneity of Wet Oxidation by RTP

    • M. Glück
    • U. König
    • A. Tillmann

    OriginalPaper 01 December 1994 Pages: 215 - 225

31. The Insertion of Single-Wafer Integrated Thermal/CVD Technology in Front-End and Back-End of the Line Processing; Lessons Learned

    • Ahmad Kermani
    • Tom Omstead
    • William Winters

    OriginalPaper 01 December 1994 Pages: 229 - 241

32. Oxide Removal on Silicon by Rapid Thermal Processing Using SiH₂CI₂ and H₂

    • X. Ren
    • M. C. Öztürk
    • D. M. Maher

    OriginalPaper 01 December 1994 Pages: 243 - 248

33. Selective Epitaxial Silicon and Selective Titanium Silicide in an Industrial Integrated Cluster Tool

    • J. L. Regolini
    • J. Margail
    • P. Gouy-Pailler

    OriginalPaper 01 December 1994 Pages: 249 - 254

34. Silicon-Carbon Random Alloy Epitaxy on Silicon by Rapid Thermal Chemical Vapor Deposition

    • J. Mi
    • P. Letourneau
    • J. C. Dupuy

    OriginalPaper 01 December 1994 Pages: 255 - 259

35. Passivation of III-V Semiconductor Surfaces Using Light Assisted Integrated Processes

    • Olivier Dulac
    • Yves I. Nissim

    OriginalPaper 01 December 1994 Pages: 261 - 271

36. Rapid Thermal Processing Requirements for 0.35-µm IC Technologies and Beyond

    • Mehrdad M. Moslehi

    OriginalPaper 01 December 1994 Pages: 273 - 285

37. Borophosphosilicate Glass(BPSG) Fusion Using Rapid Thermal Annealing and Steam Reflow: Physical Properties and Device Implications

    • Mike Maxim
    • Mansour Moinpour
    • Nicky Stenton

    OriginalPaper 01 December 1994 Pages: 289 - 296

38. Recrystallization of Amorphous Silicon Using Rapid Thermal Processing, Laser Annealing and Furnace Heating

    • J. Viatella
    • R. K. Singi
    • S. D. Harkness

    OriginalPaper 01 December 1994 Pages: 297 - 302

39. Advanced Dram Cell Dielectric Films using Rapid Thermal Processing

    • Randhir P. S. Thakur
    • Viju K. Mathews
    • Pierre C. Fazan

    OriginalPaper 01 December 1994 Pages: 305 - 311

40. A Comparison of In-Situ Vapor/Gas Phase Cleaning with Conventional RCA based Wet Cleaning

    • John M. Grant

    OriginalPaper 01 December 1994 Pages: 313 - 318

41. Optical Properties of Thermally Oxidized Silicon

    • O. L. Russo
    • N. M. Ravindra
    • K. A. Dumas

    OriginalPaper 01 December 1994 Pages: 319 - 324

42. Tunneling Current in Thin Silicon Dioxide Films

    • Sufi Zafar
    • J. C. Poler
    • J. J. Wortman

    OriginalPaper 01 December 1994 Pages: 325 - 330

43. Optical, Electrical, and Mechanical Characterization of Rapid Thermal Oxidation

    • C. B. Yarling
    • W. A. Keenan

    OriginalPaper 01 December 1994 Pages: 331 - 336

44. Rapid Thermal Processing of Shallow Junctions Using Epitaxial CoSi₂ as a Doping Source

    • Erin C. Jones
    • Shinichi Ogawa
    • Nathan W. Cheung

    OriginalPaper 01 December 1994 Pages: 339 - 343

45. Shallow-Junction Formation by Rapid Thermal Diffusion into Silicon from Doped Spin-on Glass Films

    • L. Ventura
    • A. Slaoui
    • P. Siffert

    OriginalPaper 01 December 1994 Pages: 345 - 350

46. Heating Rate Effects in Rapid Thermal Annealing of Arsenic Implanted Silicon

    • J. P. de Souza
    • P. F. P. Fichtner
    • D. K. Sadana

    OriginalPaper 01 December 1994 Pages: 351 - 356

47. Electrical Activation of Boron in B⁺ + C⁺ Implanted Si during RTA with Different Heating Rates

    • H. Boudinov
    • J. P. de Souza

    OriginalPaper 01 December 1994 Pages: 357 - 362

48. Rapid Thermal Annealing of Low-Energy P and B Implants in Silicon, Optimized by High Resolution X-Ray Diffraction

    • Jos G. E. Klappe
    • István Bársony
    • P. Alkemade

    OriginalPaper 01 December 1994 Pages: 363 - 368

49. Boron Doping using Proximity Rapid Thermal Diffusion from Spin-on-Dopants

    • M. Rastogi
    • W. Zagozdzon-Wosik
    • L. T. Wood

    OriginalPaper 01 December 1994 Pages: 369 - 374

50. Modelling of Temperature Distribution of Semiconductors During Rapid Thermal Processing

    • Andreas Tillmann

    OriginalPaper 01 December 1994 Pages: 377 - 382