Reliability Implications of Defects in High Temperature Annealed Si/Sio2/Si Structures W. L. WarrenD. M. FleetwoodJ. B. Xu OriginalPaper 01 December 1994 Pages: 3 - 12
Comparison Between SiO2 Films And Nitridated Oxides In N2O Ambient in Terms of Bulk/Interface Trapping Properties Constantin PapadasPatrick Mortini OriginalPaper 01 December 1994 Pages: 13 - 24
Impact of Various in Situ Preoxidation Process Perturbations on Gate Oxide Quality P. K. RoyM. WeinhofferS. Meester OriginalPaper 01 December 1994 Pages: 25 - 30
Comparing the Structure and Behavior of Point Defects in Silicon Oxynitride Gate Dielectrics Formed by NH3-Nitridation and N2O-Growth/Nitridation J. T. YountP. M. LenahanG. A. Brown OriginalPaper 01 December 1994 Pages: 31 - 36
The Roles of Several E’ Variants in Thermal Gate Oxide Reliability John F. Conley Jr.P. M. LenahanT. J. Morthorst OriginalPaper 01 December 1994 Pages: 37 - 42
Comparison of Film Quality and Step Coverage for Silicon Dioxide Dielectrics Formed by Rtcvd Using Tetraethoxysilane and Silane D. S. MilesG. S. HarrisJ. R. Hauser OriginalPaper 01 December 1994 Pages: 43 - 49
Reliability Study of Plasma Etching Damage in Ulsi Process Xiao-Yu LiJen-Tai HsuC. R. Viswanathan OriginalPaper 01 December 1994 Pages: 51 - 56
Effect of Power on the Properties of Sio2 Films Produced by Plasma-Enhanced Chemical Vapour Deposition Y. TaoD. LandheerM. J. Graham OriginalPaper 01 December 1994 Pages: 57 - 62
Effect of Phosphorus-Doped Polysilicon Anneal on Thin Oxide Reliability as Probed With X-Ray Damage Characterization R. NachmanF. Cerrina OriginalPaper 01 December 1994 Pages: 63 - 68
Excess Conductance of Mos Diodes Suffered Current Stress and Elucidation of Induced Interface States Masao InoueJunji Shirafuji OriginalPaper 01 December 1994 Pages: 69 - 74
Characterization of Pecvd Sixoynz: H Films and its Correlation to Device Performance and Reliability Mansour MoinpourKen MackByron Williams OriginalPaper 01 December 1994 Pages: 75 - 82
Diffusion-Induced Precipitation in Arsenosilicate Glass (AsSG) Radhika SrinivasanTue NguyenTai D. Nguyen OriginalPaper 01 December 1994 Pages: 83 - 88
Adhesion Measurements of Thin Films by Several Methods Akira KinbaraTatsuya BannoOsamu Takenaka OriginalPaper 01 December 1994 Pages: 91 - 102
Reliability of Optical Coatings Submitted to a High Power Continuous Wave Laser Beam Jean DijonE. DuloisyM. Ignat OriginalPaper 01 December 1994 Pages: 103 - 114
An Analysis by Scanning Acoustic Microscopy of the Mechanical Stability of PSG and Si3N4 Passivation Films P. ScafidiM. IgnatM. Marty OriginalPaper 01 December 1994 Pages: 115 - 120
Hrem Structure Characterization of Relaxed Interfaces in Covalently Bonded Materials Scheerschmidt Kurt OriginalPaper 01 December 1994 Pages: 121 - 126
Effects of Residual Stress on the Measurement of Hardness and Elastic Modulus Using Nanoindentation G. M. PharrT. Y. TsuiW. C. Oliver OriginalPaper 01 December 1994 Pages: 127 - 134
Determination of the Mechanical Behaviour of Thin Films on Substrate Systems from Micromechanical Experiments M. IgnatP. ScafidiJ. Dijon OriginalPaper 01 December 1994 Pages: 135 - 146
Calculation of Stresses in Strained Semiconductor Layers K. Nakajima OriginalPaper 01 December 1994 Pages: 149 - 160
The Role of Hydrogen in Current-Induced Degradation of GaAs/AlGaAs Heterojunction Bipolar Transistors F. RenC. R. AbernathyS. J. Pearton OriginalPaper 01 December 1994 Pages: 161 - 166
W/Si1-xGex Schottky Barrier: Effect of Stress and Composition F. MeyerV. AubryD. Dutartre OriginalPaper 01 December 1994 Pages: 167 - 178
The Effect of Substrate Temperature on the Crystallinity and Stress of Ion Beam Sputtered Silicon on Various Substrates Cynthia G. MadrasL. GoldmanI. N. Miaoulis OriginalPaper 01 December 1994 Pages: 179 - 184
Chip Surface Damage Induced by Internal Stress of Lead-on-Chip (LOC) Packages Masazumi AmagaiEiji Kawasaki OriginalPaper 01 December 1994 Pages: 185 - 193
Profiling the Deep Trap Level in the Semiconductor Heterostructures by Small-Pulse Deep Level Transient Spectroscopy Zhang RongYang KaiFeng Duan OriginalPaper 01 December 1994 Pages: 195 - 200
X-Ray Strain Measurements in Fine-Line Patterned Al-Cu Films M. A. MarcusW. F. FloodK. G. Steiner OriginalPaper 01 December 1994 Pages: 203 - 208
X-Ray Spectrometer with a Submicron X-Ray Beam for Ulsi Microanalysis Naoki YamamotoYoshio HommaYoshinori Hosokawa OriginalPaper 01 December 1994 Pages: 209 - 214
Plasticity, Microstructure and the Thermal Dependence of Flow Stresses in Aluminum Thin Film Interconnects Ramnath Venkatraman OriginalPaper 01 December 1994 Pages: 215 - 226
Tensile Deformation-Induced Microstructures in Freestanding Copper Thin Films R. R. KellerJ. M. PhelpsD. T. Read OriginalPaper 01 December 1994 Pages: 227 - 232
The Effect of Ultra-Low Temperature Treatments on the Stress in Aluminum Metallization on Silicon Wafers Frank BaldwinPaul H. HollowayThomas R. Watkins OriginalPaper 01 December 1994 Pages: 233 - 239
X-Ray Diffraction Determination of the Effect of Passivations on Stress in Patterned Lines of Tungsten L. ManiguetM. IgnatPh. Normandon OriginalPaper 01 December 1994 Pages: 241 - 246
Thermally Induced Stresses in Passivated Thin Films and Patterned Lines of AlSiCu U. BurgesH. HelnederW. Schilling OriginalPaper 01 December 1994 Pages: 247 - 252
Geomeiric Characterization of Electromigration Voids Yolanda J. KimePeter Grach OriginalPaper 01 December 1994 Pages: 255 - 260
Line-Width Dependence of Stress in Passivated Al Lines During Thermal Cycling D. ChidambarraoK. P. RodbellP. W. DeHaven OriginalPaper 01 December 1994 Pages: 261 - 268
Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids A. S. OatesJ. R. Lloyd OriginalPaper 01 December 1994 Pages: 269 - 274
Measurement and Interpretation of Strain Relaxation in Passivated Al-0.5%Cu Lines Paul R. BesserThomas N. MariebPaul A. Flinn OriginalPaper 01 December 1994 Pages: 275 - 280
Line width Dependence of Stress Relaxation and Yield Behavior of Passivated Al(Cu) Lines I.-S. YeoS. G. H. AndersonP. S. Ho OriginalPaper 01 December 1994 Pages: 281 - 287
Thermal Stresses in Passivated Copper Interconnects Determined by X-Ray Analysis and Finite Element Modeling R. P. VinciE. M. ZielinskiJ. C. Bravman OriginalPaper 01 December 1994 Pages: 289 - 294
The Effect of Variability among Grain Boundary Energies on Grain Growth in Thin Film Strips H. J. FrostY. HayashiD. T. Walton OriginalPaper 01 December 1994 Pages: 295 - 300
Electromigration Properties and Their Correlation to the Physical Characteristics of Multilevel Metallizations Kamesh GadepallySam GehaMichael E. Thomas OriginalPaper 01 December 1994 Pages: 301 - 306
Microstructural Characterization of Copper Thin Films on Metallic Underlayers E. M. ZielinskiR. P. VinciJ. C. Bravman OriginalPaper 01 December 1994 Pages: 307 - 312
Segregation of Copper in Dilute Aluminum - Copper Alloys for Interconnects D. A. SmithM. B. SmallA. J. Garratt-Reed OriginalPaper 01 December 1994 Pages: 313 - 318
Electrdmigration Lifetimes of Single Crystal Aluminum Lines with Different Crystallographic Orientations Y. C. JooC. V. Thompson OriginalPaper 01 December 1994 Pages: 319 - 324
The Microstructure and Electromigration Behaviour of Al-0.35%Pd Interconnects L. J. ElliottD. C. PaineJ. H. Rose OriginalPaper 01 December 1994 Pages: 325 - 331
Microstructural Evolution of Aluminum Interconnects During Post-Pattern Anneals: Correlation to Improved Em Lifetime B. MinerE. A. AtakovS. Bill OriginalPaper 01 December 1994 Pages: 333 - 338
Stress Distribution and Mass Transport along Grain Boundaries During Steady-State Electromigration M. SchergeC. L. BauerW. W. Mullins OriginalPaper 01 December 1994 Pages: 341 - 352
Modeling Electromigration-Induced Stress Buildup Due to Nonuniform Temperature J. J. ClementC. V. ThompsonA. Enver OriginalPaper 01 December 1994 Pages: 353 - 360
Stress Relaxation and Electromigration Kinetics in Short Metal Lines: Transition to Creep Controlled Regime E. GlickmanL. KlingerL. Levin OriginalPaper 01 December 1994 Pages: 361 - 366
Electromigration Failure in Thin Film Conductors Possessing a Near-Bamboo Structure J. R. Lloyd OriginalPaper 01 December 1994 Pages: 367 - 372
Detailed Study of Electromigration Induced Damage in Al and AlCuSi Interconnects U. E. MocklM. BauerE. Arzt OriginalPaper 01 December 1994 Pages: 373 - 378