In-Situ Processing of Si Film Structures in a Rapid Thermal Chemical Vapor Deposition Reactor M. L. GreenD. BrasenK. Krisch OriginalPaper 24 October 1993 Pages: 3 - 13
Correlation Between Defect Density and Process Variables In Step-Graded, Relaxed Si0.7Ge0.3 Grown on Si by Rtcvd G. Patrick WatsonEugene A. FitzgeraldLeonard C. Feldman OriginalPaper 24 October 1993 Pages: 15 - 17
Application of Constant Absorptivity Ring (Car) to Improve Polysilicon Thickness Uniformity In A Rapid Thermal Chemical Vapor Deposition Reactor Mahesh K. SanganeriaMehmet C. Öztürk OriginalPaper 24 October 1993 Pages: 19 - 23
High Quality Silicon Epitaxy In An Ultra High Vacuum Rapid Thermal Cvd Reactor: An Application to Single Wafer Processing Mahesh K. SanganeriaKatherine E. VioletteMehmet C. Öztürk OriginalPaper 24 October 1993 Pages: 25 - 30
Fabrication of Ultra-Shallow P+-N and N+-P Junctions by Diffusion From Selectively Deposited, Ion-Implanted and In-Situ Doped Si0.7Ge0.3 D.T. GriderM.C. ÖztürkD.M. Maher OriginalPaper 24 October 1993 Pages: 31 - 36
A Novel Implantation Free Raised Source/Drain Mosfet Process Using Selective Rapid Thermal Chemical Vapor Deposition Of In-Situ Boron Doped SixGe1-x Xiaowei RenMehmet C. ÖztürkStanton Ashburn OriginalPaper 24 October 1993 Pages: 37 - 41
Thin Oxynitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition P.K. MclartyW.L. HillG.S. Harris OriginalPaper 24 October 1993 Pages: 43 - 48
Characterization of Oxygen-Doped and Non-Oxygen-Doped Polysilicon Films Prepared by Rapid Thermal Chemical Vapor Deposition Xiaoli XuVeena MisraEugene A. Irene OriginalPaper 24 October 1993 Pages: 49 - 54
Thermal Stability of TiSi2 on High Dose Ion Implanted Silicon J.F. ChenL.J. ChenW. Lur OriginalPaper 24 October 1993 Pages: 57 - 62
Formation of TiSi2 During Rapid Thermal Annealing: In Situ Resistance Measurements at Heating Rates From 1°C/S to 100°C/S. Ramanath GanapathiramanS. KohS. Lee OriginalPaper 24 October 1993 Pages: 63 - 68
Self-Aligned Epitaxial Cosi2 Formation From Multilayer Co/Ti-Si(100) by a Two-Step Rta Process F. HongB.K. PatnaikC.M. Osburn OriginalPaper 24 October 1993 Pages: 69 - 74
Titanium Disilicide Formation on Cmos Structures with Phosphorous Doped Gates S. ChittipeddiA. K. NandaW. T. Cochran OriginalPaper 24 October 1993 Pages: 75 - 80
The Impact of Pre-Silicidation Heat Treatment and Dopant Effects on the Thermal Stability of Cosi2 Polycide During Rapid Thermal Annealing W. ChenJ. LinJ. Lee OriginalPaper 24 October 1993 Pages: 81 - 86
Influence of Rapid Thermal Processing Conditions on the Characteristics of Sputter Deposited Titanium Nitride Thin Films Sesh RamaswamiJohn IacoponiRobin Cheung OriginalPaper 24 October 1993 Pages: 87 - 93
Rapid Titanium Silicidation: A Comparative Study of two Rta Reactors M. BariattoA. FontesJ. J. Santiago-Aviles OriginalPaper 24 October 1993 Pages: 95 - 101
Electrical and Physical Characterization of Tin Diffusion Barrier for Sub-Micron Contact Structure G.D. YaoY.C. LuH. Zhang OriginalPaper 24 October 1993 Pages: 103 - 108
TiSi2 Formation on Submicron Polysilicon Lines: Role of Line Width and Dopant Concentration E. GaninS. WindR. Assenza OriginalPaper 24 October 1993 Pages: 109 - 114
Temperature Measurement for Rtp S. R. J. BrueckSaleem H. ZaidiM. K. Lang OriginalPaper 24 October 1993 Pages: 117 - 123
In-Situ Temperature Control for Rtp Via Thermal Expansion Measurement Bruce PeuseAllan Rosekrans OriginalPaper 24 October 1993 Pages: 125 - 131
In-Situ Temperature Monitoring in Rtp by Acoustical Techniques F.L. DegertekinJ. PeiK.C. Saraswat OriginalPaper 24 October 1993 Pages: 133 - 138
Optical Fiber Pyrometry with in-Situ Detection of Wafer Radiance and Emittance—Accufiber's Ripple Method A. T. FioryC. SchietingerF. G. Tinsley OriginalPaper 24 October 1993 Pages: 139 - 145
Rapid Thermal Processing: Status, Problems and Options After the First 25 Years Fred Roozeboom OriginalPaper 24 October 1993 Pages: 149 - 164
Evaluation of a vertical tube concept for RTP Byung-Jin ChoPeter VandenabeeleKaren Maex OriginalPaper 24 October 1993 Pages: 165 - 170
Investigation of Dynamical Temperature Behaviour in Rtp Gunnar LeitzJörg PezoldtG. Eichhorn OriginalPaper 24 October 1993 Pages: 171 - 176
To the Influence of the Wafer Edge in RTP Jens-Peter ZöllnerI. PatzschkeTu Ilmenau OriginalPaper 24 October 1993 Pages: 177 - 182
An Extensible Software Design Applied to Rapid Thermal Processing Paul DankoskiPaul GyugyiGene Franklin OriginalPaper 24 October 1993 Pages: 183 - 188
Stress and Warpage Studies of Silicon Based Plain and Patterned Films During Rapid Thermal Processing (RTP) R.P.S. ThakurA. MartinL. Perroots OriginalPaper 24 October 1993 Pages: 189 - 195
Simulation of Rapid Thermal Processing Equipment and Processes Kun-Ho LieTushar P. MerchantKlavs F. Jensen OriginalPaper 24 October 1993 Pages: 197 - 209
Three Dimensional Temperature Uniformity Modeling of a Rapid Thermal Processing Chamber Karson L. KnutsonStephen A. CampbellFloyd Dunn OriginalPaper 24 October 1993 Pages: 211 - 215
Microscale Radiation Effects in Multilayer Thin-Film Structures During Rapid Thermal Processing Peter Y. WongChristopher K. HessIoannis N. Miaoulis OriginalPaper 24 October 1993 Pages: 217 - 222
Rapid Thermal Processor Modeling, Control, and Design for Temperature Uniformity Terrence J. RileyRonald S. Gyurcsik OriginalPaper 24 October 1993 Pages: 223 - 229
Combined Simulation and Measurement Study of Temperature Uniformity in Rapid Thermal Processing Yur-Tsai LinRavi SubrahmanyanMarius Orlowski OriginalPaper 24 October 1993 Pages: 231 - 236
Stability of Ultra-Thin Gate Oxides with Boron Doped Polysilicon Gate Structures After Rapid Thermal Annealing Bojun ZhangDennis M. MaherMark A. Ray OriginalPaper 24 October 1993 Pages: 247 - 252
Boron Diffusion in Fluorine Preamorphized Silicon During Rapid Thermal Annealing H. KinoshitaT. H. HuangP. E. Bakeman Jr. OriginalPaper 24 October 1993 Pages: 253 - 258
Modeling of Boron Diffusion and Activation for Nonequilibrium Rapid Thermal Annealing Application H. KinoshitaT. H. HuangD. L. Kwong OriginalPaper 24 October 1993 Pages: 259 - 264
Enhanced Boron Diffusion in Silicon with BF2-Implanted CoSi2 AS Diffusion Source and Under Rapid Thermal Annealing J. LinW. ChenJ. Lee OriginalPaper 24 October 1993 Pages: 265 - 270
Using CoSi2 /Polysilicon Polycide Structure as a Gate Diffusion Source in Rapid Thermal Processing W. ChenJ. LinJ. Lee OriginalPaper 24 October 1993 Pages: 271 - 276
Semi-Empirical Model for Boron Diffusion During Rapid Thermal Annealing of BF2 Implanted Silicon Tzu-Hsin HuangH. KinoshitaD. L. Kwong OriginalPaper 24 October 1993 Pages: 277 - 282
Reduced Thermal Budget Borophosphosilicate Glass (BPSG) Fusion and Implant Activation Using Rapid Thermal Annealing and Steam Reflow R.P.S. ThakurF. GonzalezN. Jeng OriginalPaper 24 October 1993 Pages: 283 - 288
High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp G. W. YoonA. B. JoshiD. L. Kwong OriginalPaper 24 October 1993 Pages: 291 - 296
Investigation of Proximity Rtd for Submicron Junctions in Vlsi Si Devices W. Zagozdzon-WosikP. GrabiecG. Lux OriginalPaper 24 October 1993 Pages: 297 - 302
Gate Oxide Integrity as Affected by Hf Last Wafer Treatments and Passivating Techniques R.C. HawthorneR.P.S. ThakurR. Kauffman OriginalPaper 24 October 1993 Pages: 303 - 308
Junction Formation in Silicon by Rapid Thermal Annealing Richard B. Fair OriginalPaper 24 October 1993 Pages: 311 - 324
Nitrogen-Atom Bonding at Sio2/SI Interfaces in Metalinsulator-Semiconductor (MIS) Stacked Gates Made by Integration of Plasma Assisted Oxidation-Deposition and Rapid Thermal Processing Y. MaT. YasudaG. Lucovsky OriginalPaper 24 October 1993 Pages: 325 - 330
Fabrication of High Quality Mos Devices for Application in Hazardous Environments Based on Rtp Gate Dielectrics With in Situ Rtcvd of Polysilicon Gates B. FröschleH.P. BruemmerP. Ramm OriginalPaper 24 October 1993 Pages: 331 - 338
A Dual-Function Uhv-Compatible Chamber for i) Low-Temperature Plasma-Assisted Oxidation, and ii) High-Temperature Rapid Thermal Processing of Si-Based Dielectric Gate Heterostructures S. HattangadyX-L XuJ.J. Wortman OriginalPaper 24 October 1993 Pages: 339 - 344
Rapid Thermal Processing for Strained-Layer Semiconductor Devices John C. ZolperDavid R. Myers OriginalPaper 24 October 1993 Pages: 345 - 354
Rapid Thermal Annealing for Electrical Activation in The Fabrication of GaAs Mesfet S.W. ChoiJ.W. YangH.M. Park OriginalPaper 24 October 1993 Pages: 355 - 360
Improved Passivation of Silicon Solar Cells Using Combined Low-Energy Hydrogen Implantation and Optical Processing Bhushan L. Sopori OriginalPaper 24 October 1993 Pages: 363 - 367
