1. Movpe of Rare Earth Doped III-V Semiconductors

   • F. Scholz
   • J. Weber
   • A. Dörnen

   OriginalPaper 21 October 2020 Pages: 3 - 13

2. Mocvd Growth and Properties of Erbium Doped GaAs

   • Dietrich W. Langer
   • Yabo Li
   • Victoria Coon

   OriginalPaper 21 October 2020 Pages: 15 - 20

3. Mocvd Erbium Sources^*

   • Anton C. Greenwald
   • William S. Rees {jrJr.] Jr.
   • Uwe W. Lay

   OriginalPaper 21 October 2020 Pages: 21 - 26

4. Praseodymium Dioxide Doping of In_1−xGa_xAs_yP_1−y Epilayer Grown with Liquid Phase Epitaxy

   • Kari T. Hjelt
   • Markku A. Sopanen
   • Stanislav Hasenöhrl

   OriginalPaper 21 October 2020 Pages: 27 - 32

5. Rare-Earths Applications in III-V Crystal Growth Technology.

   • Leo Zakharenkov

   OriginalPaper 21 October 2020 Pages: 33 - 38

6. Rare-Earth Doping by Ion Implantation and Related Techniques

   • Ian G. Brown

   OriginalPaper 21 October 2020 Pages: 39 - 48

7. Growth of Er Doped si Films by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

   • Jim L. Rogers
   • Walter J. Varhue
   • Edward Adams

   OriginalPaper 21 October 2020 Pages: 49 - 54

8. Erbium Doped Semiconductor Thin Films Prepared by Rf Magnetron Sputtering

   • Hong Koo Kim
   • Cheng Chung Li
   • Philippe C. Becker

   OriginalPaper 21 October 2020 Pages: 55 - 60

9. Er-Doping in Silicon by Pulsed Laser Irradiation

   • Kenshiro Nakashima

   OriginalPaper 21 October 2020 Pages: 61 - 65

10. Er³⁺-Doped Silicon Prepared by Laser Doping

    • T. Asatsuma
    • P. Dodd
    • J. Hegarty

    OriginalPaper 21 October 2020 Pages: 67 - 72

11. Monocrystal Dislocationless Si:Ge, Grown From the Melt with Gd Impurity.

    • Borsohensky V. V.
    • Brinkevioh D. I.
    • Prosolovoh V. S.

    OriginalPaper 21 October 2020 Pages: 73 - 78

12. Epitaxial Layers Si:(Sn,Yb) Produced by the Crystallization from the Melt-Solution on the Basis of Sn.

    • D. I. Brinkevich
    • N. M. Kazuohits
    • V. V. Petrov

    OriginalPaper 21 October 2020 Pages: 79 - 84

13. Ic Compatible Processing of Si:Er for optoelectronics

    • F. Y. G. Ren
    • J. Michel
    • L. C. Kimerling

    OriginalPaper 21 October 2020 Pages: 87 - 95

14. Oxygen-Enhanced 1.54µm Photoluminescence of Er⁺³ in Silicon

    • F. Arnaud D'Avitaya
    • Y. Campidelli
    • A. Wasiela

    OriginalPaper 21 October 2020 Pages: 97 - 100

15. High Concentrations of Erbium in Crystal Silicon by Thermal or Ion-Beam-Induced Epitaxy of Erbium-Implanted Amorphous Silicon

    • J. S. Custer
    • A. Polman
    • G. N. van den Hoven

    OriginalPaper 21 October 2020 Pages: 101 - 105

16. Optical Direct and Indirect Excitation of Er³⁺ Ions in Silicon

    • A. Majima
    • S. Uekusa
    • M. Kumagai

    OriginalPaper 21 October 2020 Pages: 107 - 112

17. Effect of the Er³⁺ Concentration on the Luminescence of Ca_1−xEr_xF_2+x Thin Films Epitaxially Grown on Si(100)

    • A. S. Barriere
    • S. Raoux
    • D. Moutonnet

    OriginalPaper 21 October 2020 Pages: 113 - 118

18. Correlation of Electrical, Structural, and Optical Properties of Erbium in Silicon

    • J. L. Benton
    • D. J. Eaglesham
    • J. M. Poate

    OriginalPaper 21 October 2020 Pages: 119 - 124

19. Er Luminescence in Si: A Critical Balance between Optical Activity and Pumping Efficiency

    • S. Coffa
    • F. Priolc
    • C. Spinella

    OriginalPaper 21 October 2020 Pages: 125 - 132

20. 1.54 μm Photoluminescence of Erbium Implanted Hydrogenated Amorphous Silicon

    • M. Kechouane
    • N. Beldi
    • P. N. Favennec

    OriginalPaper 21 October 2020 Pages: 133 - 136

21. Electronic Properties and Their Relations to Optical Properties in Rare Earth Doped III-V Semiconductors

    • Akihito Taguchi
    • Kenichiro Takahei
    • Jyoji Nakata

    OriginalPaper 21 October 2020 Pages: 139 - 150

22. Effects of Ytterbium Addition on Liquid Phase Epitaxial Growth of InGaAs/InP Heterostructures

    • A. Davis
    • H. M. Dauplaise
    • J. A. Horrigan

    OriginalPaper 21 October 2020 Pages: 151 - 162

23. Electrical and Optical Properties of Yb, Er doped GaAs

    • T. Benyattou
    • D. Seghier
    • A. Le Corre

    OriginalPaper 21 October 2020 Pages: 163 - 168

24. Luminescence Study of the INTRA-4f Emissions from GaAs:(Er+O) and Al_xGal_1−xAs:(Er+O)

    • Jose E. Colon
    • David W. Elsaesser
    • Gernot S. Pomrenke

    OriginalPaper 21 October 2020 Pages: 169 - 174

25. Lattice Location and Photoluminescence of Er in GaAs and Al_0.5Ga_0.5As

    • E. Alves
    • M. F. Da Silva
    • C. R. Jones

    OriginalPaper 21 October 2020 Pages: 175 - 180

26. Optical Activation of Ion Implanted Rare-Earths

    • P. N. Favennec
    • H. L'Haridon
    • M. Gauneau

    OriginalPaper 21 October 2020 Pages: 181 - 193

27. Luminescence of TM³⁺ in Gallium Arsenide Grown by Metal-Organic Vapor Phase Epitaxy

    • Achim Dõrnen
    • Klaus Pressel
    • Jürgen Weber

    OriginalPaper 21 October 2020 Pages: 195 - 200

28. Optical Activity of Yb³⁺ in MeV Ion-Implanted InP.

    • S. Uekusa
    • A. Majima
    • M. Kumagai

    OriginalPaper 21 October 2020 Pages: 201 - 206

29. Preparation and Properties of Gallium Phosphide Doped by Rare-Earth Elements

    • Sergei L. Pyshkin
    • Alberto Anedda

    OriginalPaper 21 October 2020 Pages: 207 - 212

30. Esr of Rare Earth Impurities (Dy³⁺, Er³⁺, Yb³⁺) in the Narrow Gap Semiconductor PbTE

    • A. M. Gennaro
    • G. B. Martins
    • C. Y. An

    OriginalPaper 21 October 2020 Pages: 213 - 218

31. Correlation of the Location in Crystal Lattice and Optical Activity of the Yb Impurity in 111-V Compounds

    • Adrian Kozanecki

    OriginalPaper 21 October 2020 Pages: 219 - 224

32. Tm Doping of Lead Telluride

    • Ludmila I. Ryabova
    • Marina E. Tamm

    OriginalPaper 21 October 2020 Pages: 225 - 228

33. The Effect of Rare-Earth Elements on the Entroy of Radiation Defects Ionization in N-Type Go

    • V. V. Petrov
    • T. D. Kharchenko
    • V. Yu. Yavid

    OriginalPaper 21 October 2020 Pages: 229 - 235

34. Excitation and De-Excitation Mechanisms of Rare-Earth Ions in III-V Compounds: Optically Detected Microwave-Induced Impact Ionization of Yb Dopant in Inp

    • T. Gregorkiewicz
    • B. J. Heijmink Liesert
    • F. Scholz

    OriginalPaper 21 October 2020 Pages: 239 - 250

35. Annealing Studies of Er-Implanted GaAs and the Excitation Mechanism of Er in GaAs

    • D. W. Elsaesser
    • J. E. Colon
    • G. S. Pomrenke

    OriginalPaper 21 October 2020 Pages: 251 - 256

36. Photoluminescence Study of Energy Transfer Processes in Erbium Doped Al_xGa_l−xAs Grown by MBE

    • Tong Zhang
    • J. Sun
    • P. J. Caldwell

    OriginalPaper 21 October 2020 Pages: 257 - 262

37. Luminescence Properties of Yb-Doped Inp

    • H. J. Lozykowski
    • A. K. Alshawa
    • I. Brown

    OriginalPaper 21 October 2020 Pages: 263 - 268

38. Excitation of the 4F-4F Emission of Donor-Type Rare-Earth Centers Through Donor-Acceptor Pair States (ZNS:TM)

    • K. Lobe
    • R. Boyn
    • H. Zimmermann

    OriginalPaper 21 October 2020 Pages: 269 - 274

39. Eu and Yb Excitation Mechanisms in ZnS, CaS, SrS and InP

    • M. Godlewski
    • K. Swiatek
    • B. Monemar

    OriginalPaper 21 October 2020 Pages: 275 - 280

40. Luminescence Properties of Yb- and Nd- Implanted CdS

    • A. K. Alshawa
    • H. J. Lozykowski
    • I. Brown

    OriginalPaper 21 October 2020 Pages: 281 - 286

41. Electrically Pumped Rare Earth Doped Semiconductor Lasers

    • Jacques I. Pankove
    • Robert J. Feuerstein

    OriginalPaper 21 October 2020 Pages: 287 - 292

42. Excitation and Relaxation Processes of Impact Excitation Emission of Er³⁺ Ions in InP

    • T. Kimura
    • H. Ishida
    • T. Ikoma

    OriginalPaper 21 October 2020 Pages: 293 - 298

43. Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors

    • S. J. Chang
    • K. Takahei
    • Y. K. Su

    OriginalPaper 21 October 2020 Pages: 299 - 304

44. Novel Electronics Enabled by Rare Earth Arsenides Buried in III-V Semiconductors

    • S. James Allen
    • Dan Brehmer
    • C. J. Palmstrøm

    OriginalPaper 21 October 2020 Pages: 307 - 317

45. Study of Sr_l−xEr_xF_2+x Luminescent Thin Films Epitaxially Grown on InP (100).

    • A. S. Barriere
    • B. Mombelli
    • A. Garcia

    OriginalPaper 21 October 2020 Pages: 319 - 324

46. Optical and Structural Properties of CaF₂:Nd Films on Si-Based Substrates

    • C.-C. Cho
    • W. M. Duncan
    • H.-Y. Liu

    OriginalPaper 21 October 2020 Pages: 325 - 330

47. MBE Growth of Rare-Earth Doped Fluoride Insulators on Semiconductors for Laser Applications

    • M. Lui
    • R. A. McFarlane
    • D. Yap

    OriginalPaper 21 October 2020 Pages: 331 - 336

48. Erbium Doped Gallium Arsenide a Self-Organising Low Dimensional System

    • A. R. Peaker
    • H. Efeoglu
    • K. E. Singer

    OriginalPaper 21 October 2020 Pages: 337 - 345

49. Er-Doped GaAs for High Speed Photoconductor Applications

    • S. Gupta
    • S. Sethi
    • S. Williamson

    OriginalPaper 21 October 2020 Pages: 347 - 352

50. EuTe/PbTe Superlattices: Mbe Growth and Optical Characterization

    • G. Springholz
    • Shu Yuan
    • H. Krenn

    OriginalPaper 21 October 2020 Pages: 353 - 358