Volume 300, Issue 1

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December 1993

Symposium D1 — III–V Electronic and Photonic Device Fabrication and Performance

Issue Editors:

K.S. Jones,
S.J. Pearton

80 articles in this issue

Growth of Heterojunction Bipolar Transistors by Metalorganic Molecular Beam Epitaxy
Cammy R. Abernathy
OriginalPaper 01 December 1993 Pages: 3 - 13
Fabrication Techniques for GaAs Based HBTs and FETs
F. Ren
OriginalPaper 01 December 1993 Pages: 15 - 27
Fabrication, Performance, and Reliabilityof InP-Based HBTs
William E. Stanchina
Robert A. Metzger
David B. Rensch
OriginalPaper 01 December 1993 Pages: 29 - 40
Pseudomorphic HEMT Devices for Microwave and Millimeter Wave Applications
C.S. Wu
G.L Lan
M. Hu
OriginalPaper 01 December 1993 Pages: 41 - 54
High Gain, Low Noise InP HEMT for Millimeter-Wave Application
C. Yuen
Y. C. Pao
N. G. Bechtel
OriginalPaper 01 December 1993 Pages: 55 - 60
Fabrication/Characterization of a Pseudomorphic Ga_0.1In_0.9P/InP MESFET
M. S. Feng
Y. M. Hsin
C. H. Wu
OriginalPaper 01 December 1993 Pages: 61 - 66
Fabrication and Low Temperature Transport Studies of Sub-Micron, In-Plane Gated FETs Defined by Low Energy Ion Exposure
C.C. Andrews
G.F. Spencer
W.P. Kirk
OriginalPaper 01 December 1993 Pages: 67 - 72
Epitaxial Growth, Fabrication, and Performance of Ingaas Strained Quantum Well Laser Structures
W. S. Hobson
OriginalPaper 01 December 1993 Pages: 75 - 88
Selective Area Epitaxy for Optoelectronic Devices
H. Temkin
R. A. Hamm
Y. L. Wang
OriginalPaper 01 December 1993 Pages: 89 - 99
High Power Broad Area GaInAs/GaAs/GaInP Lasers Grown by CBE for Pumping Er Doped Glasses
Ph. Maurel
J.C. Garcia
C. Carriere
OriginalPaper 01 December 1993 Pages: 101 - 106
Fully Planar Ion-Implanted 0.98 µm Strained Quantum Well Laser
W. S. Hobson
S. J. Pearton
R. G. Elliman
OriginalPaper 01 December 1993 Pages: 107 - 113
C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures
S. Subramanian
B. M. Arora
G. Fernandes
OriginalPaper 01 December 1993 Pages: 115 - 119
Material Characteristics of InGaAsP/InGaP Lasers
Jae S. Yoo
Young T. Ko
Han S. Kim
OriginalPaper 01 December 1993 Pages: 121 - 126
Use of a Native Oxide of A1_xGa_1-xAs in the Fabrication of Integrated Laser/Modulators
R.S. Burton
T.E. Schlesinger
OriginalPaper 01 December 1993 Pages: 127 - 132
Integration of a Quantum Well Laser with AlGaAs/GaAs-HEMT Electronics
W. Bronner
J. Hornung
Z.-G. Wang
OriginalPaper 01 December 1993 Pages: 133 - 138
Recombination at Heterojunction Interfaces
M. Mullenborn
N. M. Haegel
OriginalPaper 01 December 1993 Pages: 139 - 143
Many Body Effects in Strained Quantum Well Lasers
S. Banerjee
A. K. Srivastava
N. Chand
OriginalPaper 01 December 1993 Pages: 145 - 149
Small Diameter Dry Etched Via Holes in GaAs
S. J. Pearton
F. Ren
T. R. Fullowan
OriginalPaper 01 December 1993 Pages: 153 - 159
Low Temperature SiN_x as a Sacrificial Layer in Novel Device Fabrication
J. R. Lothian
F. Ren
W. S. Hobson
OriginalPaper 01 December 1993 Pages: 161 - 167
Formation of Long Wavelength InP Laser Mesas
F. Ren
S. J. Pearton
C. Constantine
OriginalPaper 01 December 1993 Pages: 169 - 175
Magnetron Dry Etching for Photonic Device Fabrication
H. E. G. Arnot
H. P. Zappe
H. W. Lehmann
OriginalPaper 01 December 1993 Pages: 177 - 182
Electron Cyclotron Resonance CVD of Silicon Oxynitride for Optoelectronic Applications
M. Boudreau
M. Boumerzoug
D.A. Thompson
OriginalPaper 01 December 1993 Pages: 183 - 188
Vacuum Integrated Fabrication of Buried Heterostructure EDGE Emitting Laser Diodes
M. Hong
D. Vahkshoori
R. S. Freund
OriginalPaper 01 December 1993 Pages: 189 - 196
Influence of CH₄/H₂ Reactive Ion Etching on Deep Levels in Si-doped Al_xGa_1-xAs (x=0.25).
R. Pereira
M. Van Hove
M. Van Rossum
OriginalPaper 01 December 1993 Pages: 197 - 202
In-Situ Dry Etching of InP Using Phosphorus Trichloride and Re-Growth Inside a Chemical Beam Epitaxial Growth Chamber
R. M. Kapre
W T. Tsang
P. F. Sciortino Jr
OriginalPaper 01 December 1993 Pages: 203 - 209
Enhancement of the METAL/Si-Doped AlGaAs Schottky Barrier Height by CH₄/H₂ Reactive Ion Etching
R. Pereira
M. Van Hove
M. Van Rossum
OriginalPaper 01 December 1993 Pages: 211 - 216
Dual Role of TiN Reaction Barrier in Gold-Based Metallization to GaAs
A. Piotrowska
E. Kamińska
A. Turos
OriginalPaper 01 December 1993 Pages: 219 - 224
Pd/Ge Contacts to n-TYPE InP
Ping Jian
Douglas G. Ivey
Gordon Knight
OriginalPaper 01 December 1993 Pages: 225 - 230
Schottky Contacts Formed on Phosphidized InGaAs
Takashi Sugino
Yoshifumi Sakamoto
Junji Shirafuji
OriginalPaper 01 December 1993 Pages: 231 - 236
Behavior Of Zinc During Formation of Au(Zn) Ohmic Contacts to p-Type GaAs
E. Kamińska
A. Piotrowska
E Dynowska
OriginalPaper 01 December 1993 Pages: 237 - 242
Low Contact Resistivity Mn/Au/Ti/Pd/Au P-Ohmic Contacts for HBTs
B. Vetanen
C. Haynes
S. park
OriginalPaper 01 December 1993 Pages: 243 - 247
Current Transport in Low-Resistance Metal-InP Contacts
Thomas Clausen
Otto Leistiko
OriginalPaper 01 December 1993 Pages: 249 - 254
Stable Pt/Ge/Au Ohmic Contact to n-GaAs with a Ta-Si-N Barrier
J. S. Chen
E. Kolawa
M-A. Nicolet
OriginalPaper 01 December 1993 Pages: 255 - 260
The Effects of Elemental Sequence and Pairing on Interdiffusion and Phase Formation of Al-Ge-Ni Ohmic Contacts for (001) GaAs
W. V. Lampert
T. W. Haas
Paul H. Holloway
OriginalPaper 01 December 1993 Pages: 261 - 266
The Low Specific Ohmic Contact Resistivity of Alloyed Ge-Low-Content Au on Si-Implanted Electrically-Active GaAs Crystal Layers
Yasuyuki Saito
OriginalPaper 01 December 1993 Pages: 267 - 272
An Optimization Study of Thermal Stability of W/GaAs Schottky Gates
Marcio Favoretto
Jacobus W. Swart
OriginalPaper 01 December 1993 Pages: 273 - 277
The Study of TiWN Schottky Contacts on n-Ga_0.51In_0.49P
Edward Y. Chang
Yeong-Lin Lai
F. Y. Juang
OriginalPaper 01 December 1993 Pages: 279 - 284
Metallurgical and Electrical Properties of Capped Au-based Metallizations on GaAs
X. W. Lin
A. Piotrowska
J. Washburn
OriginalPaper 01 December 1993 Pages: 285 - 290
Unexpected Penetration of AuGe/Pt Metal Into a Interface Between a Atmospheric Chemical Vapor Deposition Silicon Dioxide Film and Gaas Wafer Surface
Yasuyuki Saito
OriginalPaper 01 December 1993 Pages: 291 - 293
Modification of A_mB_v Semiconductor Layers by Ion Implantation
W. Wesch
OriginalPaper 01 December 1993 Pages: 297 - 309
Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation
T. E. Haynes
R. Morton
S. S. Lau
OriginalPaper 01 December 1993 Pages: 311 - 321
Defects and Diffusion in Si⁺ Implanted GaAs
K.S. Jones
H.G. Robinson
E.L. Allen
OriginalPaper 01 December 1993 Pages: 323 - 330
Differences of Damage Production in GaAs AND InP After MeV and Low Energy Ion Implantation
E. Wendler
T. Bachmann
W. Wesch
OriginalPaper 01 December 1993 Pages: 331 - 336
Reliability of Implant-Isolation Regions in Highly-Doped GaAs-Based Structures
F. Ren
S. J. Pearton
S. N. G. Chu
OriginalPaper 01 December 1993 Pages: 337 - 344
Differential Reflectance Studies of Structural Changes in GaAs Caused by Ar⁺ Ion Bombardment
M. H. Ludwig
R.E. Hummel
OriginalPaper 01 December 1993 Pages: 345 - 350
Rapid Thermal Annealing of InP Implanted With Group IV Elements
M.C. Ridgway
P. Kringhoj
OriginalPaper 01 December 1993 Pages: 351 - 356
Optical characterization of 100 eV C⁺ ion doped GaAs
Tsutomu Iida
Yunosuke Makita
Shin-ichiro Uekusa
OriginalPaper 01 December 1993 Pages: 357 - 362
Modeling Dopant Diffusion in Gallium Arsenide
M. D. Deal
C. J. Hu
H. G. Robinson
OriginalPaper 01 December 1993 Pages: 365 - 376
Thermal Equilibrium Concentrations and Effects of Ga Vacancies in n-Type GaAs
Teh Y. Tan
Horng-Ming You
Ulrich M. Gösele
OriginalPaper 01 December 1993 Pages: 377 - 390
Energetics of Impurity-Free Vacancy-Mediated Disordering of AlGaAs/GaAs Superlattices
B.L. Olmsted
S.N. Houde Walter
OriginalPaper 01 December 1993 Pages: 391 - 396

Volume 300, Issue 1

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