Volume 299, Issue 1

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December 1994

Symposium C2 — Infrared Detectors—Materials, Processing, and Devices

Issue Editors:

Ami Appelbaum,
L. Ralph Dawson

47 articles in this issue

Photoconductive (PC) and Photovoltaic (PV) Dual-Mode Operation III–V Quantum Well Infrared Photodetectors for 2–14 μm IR Detection
Sheng S. Li
Y. H. Wang
P. Ho
OriginalPaper 01 December 1994 Pages: 3 - 8
Modeling of MBE Growth with Interacting Fluxes
David H. Tomich
K. G. Eyink
W. T. Cooley
OriginalPaper 01 December 1994 Pages: 9 - 14
Differentially Strained P-Doped Quantum Well Infrared Photodetector
R.T. Kuroda
E. Garmire
OriginalPaper 01 December 1994 Pages: 15 - 20
InAs/In_xGa_1-xSb Type II Strained Layer Superlattices for Long Wavelength Infrared Detection Applications
D. N. Talwar
John P. Loehr
B. Jogai
OriginalPaper 01 December 1994 Pages: 21 - 25
Undoped LEC GaAs as an Infrared Bolometer Detector
S Estill
M R Brozel
OriginalPaper 01 December 1994 Pages: 27 - 32
A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials
R. P. Wright
S. E. Kohn
N. M. Haegel
OriginalPaper 01 December 1994 Pages: 35 - 40
Low Temperature PL Characterization of Lpee Grown Gasb and Gainassb Epilayers
S. Iyer
S. Hegde
W. Mitchel
OriginalPaper 01 December 1994 Pages: 41 - 45
A Shubnikov-de Haas Study of Tilted Magnetic Field in the HgTe/CdTe Superlattice
Ikai Lo
W.C. Mitchel
T.H. Myers
OriginalPaper 01 December 1994 Pages: 47 - 52
Intersubband Transitions in In_0.07Ga_0.93As/Al_0.4Ga_0.6As Multiple Quantum Wells
F. Szmulowicz
M.O. Manasreh
C.E. Stutz
OriginalPaper 01 December 1994 Pages: 53 - 58
Photoluminescence and Photomodulation Spectroscopy of CdTe/Cd_1−xMn_xTe: In Multiple Quantum Wells
S. Jiang
L.J. Zhang
S.C. Shen
OriginalPaper 01 December 1994 Pages: 59 - 64
The Photoemission from Superlattices of III–V Semiconductors with Graded Interfaces Under Quantizing Magnetic Field
Kamakhya P. Ghatak
Badal De
OriginalPaper 01 December 1994 Pages: 65 - 70
Bulk Homogeneity of Iron Doped InP
J. Jimenez
M. Avella
M. Chafai
OriginalPaper 01 December 1994 Pages: 71 - 76
The Burstein-Moss Shift in Quantum Confined Infrared Materials
Kamakhya P. Ghatak
Badal De
OriginalPaper 01 December 1994 Pages: 77 - 82
Extending HgCdTe Photovoltaic Detector Technology to Cutoff Wavelengths of 17 μm
E. E. Krueger
G. N. Pultz
M. B. Reine
OriginalPaper 01 December 1994 Pages: 85 - 98
MOVPE Growth of MCT for LWIR Detectors
S.J.C. Irvine
J. Bajaj
L.O. Bubulac
OriginalPaper 01 December 1994 Pages: 99 - 108
Low Resistance Ohmic Contacts to n-Hg_1−xCd_xTe Using a HgTe Cap Layer
Patrick W. Leech
Geoffrey K. Reeves
OriginalPaper 01 December 1994 Pages: 109 - 114
HgCdTe Surface Cleanup and Etch Using a Remote Hydrogen Plasma
Patricia B. Smith
OriginalPaper 01 December 1994 Pages: 115 - 126
Thermal Diffusivity Measurement of Pure Te, (Hg_1−x Cd_x)_1−yTe_y and (Hg_1−xZn_x)_1−yTe_y
Hossein Maleki
Lawrence R. Holland
OriginalPaper 01 December 1994 Pages: 127 - 134
The Growth of High-Quality MCT Films by MBE Using In Situ Ellipsometry
K.K. Svitashev
S.A. Dvoretsky
V.G. Remesnik
OriginalPaper 01 December 1994 Pages: 135 - 140
Improved Quality of Bulk II–VI Substrates for HgCdTe and HgZnTe Epitaxy
Sanghamitra Sen
John E. Stannard
OriginalPaper 01 December 1994 Pages: 143 - 153
Excess Carrier Lifetimes in (HgCd)Te Grown by MOCVD Interdiffused Multilayer Process
P. Mitra
T. R. Schimert
F. C. Case
OriginalPaper 01 December 1994 Pages: 155 - 161
Mapping of Defects in Metal-Semiconductor-Metal (MSM) Detectors in Hg_1−xCd_xTe by Nuclear Microprobe
Patrick W. Leech
Sean P. Dooley
David N. Jamieson
OriginalPaper 01 December 1994 Pages: 163 - 168
Twinning Effects in Hg_1−xCd_xTe(x˜0.2) Grown by THM in the 〈111〉 Direction
Eliezer Weiss
Ehud Kedar
Nili Mainzer
OriginalPaper 01 December 1994 Pages: 169 - 174
HgCdTe MBE Technology: A Focus On Chemical Doping
Owen K. Wu
OriginalPaper 01 December 1994 Pages: 175 - 183
Quality of Bulk CdTe Substrates and its Relation to Intrinsic Defects
B. K. Meyer
D. M. Hofmann
M. Schenk
OriginalPaper 01 December 1994 Pages: 185 - 189
Defect Reduction in Cd_1−xZn_xTe Epilayers on GaAs Substrates
Saket Chadda
Kevin Malloy
John Reno
OriginalPaper 01 December 1994 Pages: 191 - 196
Direct Heteroepitaxial Growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) Substrates by MBE
T. J. de Lyon
S. M. Johnson
J. A. Roth
OriginalPaper 01 December 1994 Pages: 197 - 202
Characterization of Growth Defects in ZnTe Single Crystals
W. Zhou
J. Wu
S.L. Lehoczky
OriginalPaper 01 December 1994 Pages: 203 - 208
Study of different Cadmium Telluride Materials doped with V, Zn and Cl grown by vertical Bridgman Furnace and by THM.
Ch. Steer
L. Chibani
P. Siffert
OriginalPaper 01 December 1994 Pages: 209 - 214
Crystallographic and Metallurgical Characterization of Radiation Detector Grade Cadmium Telluride Materials
C.J. Johnson
E.E. Eissler
K.G. Lynn
OriginalPaper 01 December 1994 Pages: 215 - 230
Recent Developments in High Resistivity Detector-Grade CdTe
M. Hage-Ali
P. Siffert
OriginalPaper 01 December 1994 Pages: 231 - 238
An Array of CdTe Detectors for Imaging Applications
Y. Eisen
E. Polak
OriginalPaper 01 December 1994 Pages: 239 - 247
Progress in Cd_1−xZn_xTe (CZT) Radiation Detectors
J. F. Butler
F. P. Doty
C. Lingren
OriginalPaper 01 December 1994 Pages: 249 - 258
Performance Characteristics of CdTe Gamma-Ray Spectrometers
Michael R. Squillante
Herbert Cole
Gerald Entine
OriginalPaper 01 December 1994 Pages: 259 - 264
Characterization of Doped Ge_xSi_1−x Multiple Quantum well Structures for Far- IR Detectors
D.W. Greve
R. Misra
T.E. Schlesinger
OriginalPaper 01 December 1994 Pages: 267 - 272
Performance Characteristics of N-Type Si-Si/GE Quantum Well Infrared Photodetectors
V. D. Shadrin
V. T. Coon
F. L. Serzhenko
OriginalPaper 01 December 1994 Pages: 273 - 277
IV–VI on Fluoride/Si Structures for IR-Sensor Array Applications
A. Fach
C. Maissen
H. Zogg
OriginalPaper 01 December 1994 Pages: 279 - 284
Infrared-Photoconductivity Due to Sub-Band Transitions in PbTe/Pb_1−xEu_xTe and PbSe/Pb_1−xMn_xSe
Shu Yuan
G. Springholz
M. Kriechbaum
OriginalPaper 01 December 1994 Pages: 285 - 290
Buffer Layers for Ferroelectric-Based Infra-Red Detectors on Si Grown by a Novel CVD Method
Gregory T. Stauf
Peter C. Van Buskirk
Walter P. Kosar
OriginalPaper 01 December 1994 Pages: 291 - 296
Effects of the Substrate on the Response of P(VDF-TrFE) Pyroelectric Detector
A. Mahrane
M. Djafari-Rouhani
D. Esteve
OriginalPaper 01 December 1994 Pages: 297 - 302
Growth of MBE-Codeposited IrSi₃ on Si(111) and Si(100)
Gary A. Gibson
Davis A. Lange
Charles M. Falco
OriginalPaper 01 December 1994 Pages: 303 - 308
Process Optimization for the Fabrication of the Thin PtSi Schottky Barrier Diode IRCCD
Wang-Nang Wang
Chia Ho
Jee-Ming Shiue
OriginalPaper 01 December 1994 Pages: 309 - 312
Iridium Silicide Formation by Rapid Thermal Annealing
T. Rodriguez
H. Wolters
J.C. Soares
OriginalPaper 01 December 1994 Pages: 313 - 317
Thermal Stability of Ir-Silicide/SiGe Layers Grown in a Dual Electron Gun Chamber at Ultra-High Vacuum (Extended Abstract)
C. K. Chung
J. Hwang
OriginalPaper 01 December 1994 Pages: 319 - 323
Influence of Oxygen on the Iridium Silicide Formation by Rapid Thermal Annealing
M. Fernandez
T. Rodriguez
H. Wolters
OriginalPaper 01 December 1994 Pages: 325 - 328
High-Performance Lead Telluride-Based Photodetectors
Boris A. Akimov
Dmitriy R. Khokhlov
OriginalPaper 01 December 1994 Pages: 329 - 334
Effect of Solutal Convection During the Growth of Silicon in a Sandwich System
Sadik Dost
Ned Djilali
Husnu A. Erbay
OriginalPaper 01 December 1994 Pages: 335 - 340

Volume 299, Issue 1

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