Measurements of SiH3 and SiH2 Radical Densities in RF Silane Plasmas using Laser Spectroscopic Techniques T. Goto OriginalPaper 21 October 1993 Pages: 3 - 12
Clusters in a Silane Glow Discharge: Mechanism of Their Formation and How to Avoid Them S. VepřekO. AmbacherM.G.J. Vepřek-Heijman OriginalPaper 21 October 1993 Pages: 13 - 18
In Situ Ellipsometric Observation of the Growth of Crystalline Silicon from Fluorinated Precursors Tetsuya AkasakaYuhzo ArakiIsamu Shimizu OriginalPaper 21 October 1993 Pages: 19 - 24
Ellipsometry Studies of (μc-Si:H/ZnO) and (μc-Si:H/a-Si:H) Interfaces in Magnetron Sputtering System Y.H. YangM. KatiyarN. Maley OriginalPaper 21 October 1993 Pages: 25 - 30
Effect of Gas Phase Hydrogen-Dilution on the Nucleation, Growth, and Interfaces of a-Si1-xCx:H Yiwei LuIlsin AnR.W. Collins OriginalPaper 21 October 1993 Pages: 31 - 36
Depletion Fraction of Silane and Dominant Neutral Radical in RF Glow Discharge in Silane Quixun LinXuanying LinShaoqi Peng OriginalPaper 21 October 1993 Pages: 37 - 41
Sub-Surface Equilibration of Hydrogen with the a-Si:H Network Under Film Growth Conditions Ilsin AnY.M. LiR.W. Collins OriginalPaper 21 October 1993 Pages: 43 - 48
Mechanism of High Rate a-Si:H Deposition in a VHF Plasma M. HeintzeR. ZedlitzG.H. Bauer OriginalPaper 21 October 1993 Pages: 49 - 54
An Approach to High Quality a-Ge:H by VHF Deposition Ralf ZedlitzMoritz HeintzeGottfried H. Bauer OriginalPaper 21 October 1993 Pages: 55 - 60
Effects of Electrode Spacing and Hydrogen Dilution on a-SiC:H and a-Si:H Layers J. Daey OuwensR.E.I. SchroppE. Tresso OriginalPaper 21 October 1993 Pages: 61 - 66
Bandgap Engineering in Hydrogenated Silicon Films Made by Combined Hydrogen Dilution and Atomic Hydrogen Treatments K.C. HsuH.L. Hwang OriginalPaper 21 October 1993 Pages: 67 - 71
Optoelectronic Properties of a-Si:H Films Deposited from He-Diluted Silane C. SwiatkowskiP. Roca i CabarrocasM. Kunst OriginalPaper 21 October 1993 Pages: 73 - 78
Fabrication of High Quality Poly-Si from Fluorinated Precursors Shin-Ichi IshiharaDeyan HeIsamu Shimizu OriginalPaper 21 October 1993 Pages: 79 - 89
Reduction of the Defect Density in a-Si:H Deposited At ≤ 250°C Hitoshi NishioGautam GangulyAkihisa Matsuda OriginalPaper 21 October 1993 Pages: 91 - 96
Electron Transport and Conductton-Band-Tail States in a-Si:H Deposited with a Remote Hydrogen Plasma C.E. NebelR.A. StreetJ. Walker OriginalPaper 21 October 1993 Pages: 97 - 102
An Examination of H Effusion in a-Si:H Using Infrared Spectroscopy A.H. MahanE.J. JohnsonJ.D. Webb OriginalPaper 21 October 1993 Pages: 103 - 108
Low–Temperature Chemical–Vapor Deposition of Amorphous Semiconductors and Insulators Masakiyo MatsumuraOsamu Sugiura OriginalPaper 21 October 1993 Pages: 109 - 120
Low Filament Temperature Deposition of a-Si:H by Catalytic Chemical Vapor Deposition P. BrogueiraS. GrebnerJ.P. Conde OriginalPaper 21 October 1993 Pages: 121 - 126
Separating the Contributions of Hydrogen and Structural Relaxation to Damage Annealing in a-Si:H P.A. StolkA.J.M. BerntsenW.F. Van Der Weg OriginalPaper 21 October 1993 Pages: 127 - 132
Hydrogen Content of a-Si:H and a-Si:H,F as a Function of Chemical Annealing J.N. BullockK. RimS. Wagner OriginalPaper 21 October 1993 Pages: 133 - 138
Piezoelectric Effect on Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films Masashi KawasakiMasatomo SumiyaHideomi Koinuma OriginalPaper 21 October 1993 Pages: 139 - 144
High Substrate Temperature a-Si:H Grown by DC Reactive Magnetron Sputtering Y.H. LiangN. MaleyJ.R. Abelson OriginalPaper 21 October 1993 Pages: 145 - 150
Laser Dehydrogenation of PECVD Amorphous Silicon Ping MeiJ.B. BoyceD.L. Smith OriginalPaper 21 October 1993 Pages: 151 - 156
First Principles Molecular Dynamics Studies of a-Si and a-Si:H P. A. Fedders OriginalPaper 21 October 1993 Pages: 159 - 169
Electronic Structure and Dynamics of Defect in a-Si:H By AB-Initio Molecular Dynamics N. OritaT. SasakiH. Katayama-Yoshida OriginalPaper 21 October 1993 Pages: 171 - 176
Effects of Structural Disorder on the Electronic Properties of Silicon: Tight-Binding Calculations of Grain Boundaries M. KohyamaR. Yamamoto OriginalPaper 21 October 1993 Pages: 177 - 182
Defect Relaxation Dynamics in Amorphous Silicon J. David CohenThomas M. LeenR.J. Rasmussen OriginalPaper 21 October 1993 Pages: 183 - 194
Evidence for Different Kinds of Dangling Bond Defects in a-Si:H Minh TranH. FritzscheP. Stradins OriginalPaper 21 October 1993 Pages: 195 - 200
Are There Charged Dangling Bonds in Device Quality Amorphous Silicon? M.S. BrandtA. AsanoM. Stutzmann OriginalPaper 21 October 1993 Pages: 201 - 206
Signature of the Weak Bond-Dangling Bond Conversion Process in a-Si:H As Seen by Total Photoelectron Yield Spectroscopy W. GrafK. LeihkammL. Ley OriginalPaper 21 October 1993 Pages: 207 - 212
Electron Spin Resonance Study of the Dangling Bond in a-Si:H and Porous Silicon T.J. Mc MahonY. Xiao OriginalPaper 21 October 1993 Pages: 213 - 218
Photoluminescence and Light-Induced ESR in a-Si:H Studied with Subgap Excitation Rosari SalehIsabell UlberWalther Fuhs OriginalPaper 21 October 1993 Pages: 219 - 224
Structure and Stability of Microvoids in a-Si:H R. BiswasI. Kwon OriginalPaper 21 October 1993 Pages: 225 - 230
Investigation on Microvoids in PECVD a-Si:H C. ManfredottiF. FizzottiV. Rigato OriginalPaper 21 October 1993 Pages: 231 - 236
Structural Equilibration in Pure and Hydrogenated Amorphous Silicon Gerhard MüllerGerhard Krötz OriginalPaper 21 October 1993 Pages: 237 - 248
Amplitude Dependence of Metastable Defect Formation W.B. JacksonC. NebelR.A. Street OriginalPaper 21 October 1993 Pages: 249 - 254
Dependence of Thermally Induced Metastability on Hydrogen Content in Amorphous Silicon Stanislaw M. Pietruszko OriginalPaper 21 October 1993 Pages: 255 - 260
The Effect of Post-Deuteration on Metastability in a-Si:H N.H. NickelW.B. JacksonC.C. Tsai OriginalPaper 21 October 1993 Pages: 261 - 266
Hydrogen Diffusion Mechanism in Amorphous Silicon from D Tracer Diffusion: Theory and Experiment Howard M. BranzSally AsherMathieu Kemp OriginalPaper 21 October 1993 Pages: 279 - 284
Hydrogen and Lithium Diffusion in Amorphous Silicon Wolfhard BeyerUwe Zastrow OriginalPaper 21 October 1993 Pages: 285 - 290
Diffusion of Hydrogen in Amorphous Silicon in the Low Concentration Regime J.A. RothG.L. OlsonJ.M. Poate OriginalPaper 21 October 1993 Pages: 291 - 296
Doping Dependence of Local Hydrogen Motion in Hydrogenated Amorphous Silicon P. HariP.C. TaylorR.A. Street OriginalPaper 21 October 1993 Pages: 297 - 301
Annealing of Ion-Implanted Hydrogenated Amorphous Silicon: Stable and Removable Damage A.J.M. BerntsenP.A. StolkF.W. Saris OriginalPaper 21 October 1993 Pages: 303 - 308
1 / f Noise Measurements of Interacting Current Filaments in Hydrogenated Amorphous Silicon C.E. ParmanN.E. IsraeloffJ. Kakalios OriginalPaper 21 October 1993 Pages: 309 - 314
Carrier Injection in a-Si:H P-I-N Devices: Hydrogen Redistribution and Defect Creation J.M. AsensiJ. AndreuJ.C. Delgado OriginalPaper 21 October 1993 Pages: 315 - 320
Inhomogeneity in the Network Order of Device Quality a-Si:H G. MorellR.S. KatiyarI. Balberg OriginalPaper 21 October 1993 Pages: 321 - 326
Defect Relaxation in a-Si:H Studied by Defect Absorption and Luminescence Daxing HanYang Xiao OriginalPaper 21 October 1993 Pages: 327 - 332
Odesr Studies of a-Si:H with Subgap Excitation D. MaoS.Q. GuP.C. Taylor OriginalPaper 21 October 1993 Pages: 333 - 338
A New PDS Study on PECVD a-Si:H C. ManfredottiF. FizzottiL. Boarino OriginalPaper 21 October 1993 Pages: 339 - 344
