Volume 279, Issue 1

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December 1992

Symposium A — Beam-Solid Interactions-Fundamentals and Applications

Issue Editors:

Robert S. Averback,
Lloyd R. Harriott,
Nicole Herbots,
Michael Nastasi

138 articles in this issue

Computer Simulation of Atomic Collision Processes in Solids
Mark T. Robinson
OriginalPaper 15 August 1992 Pages: 3 - 16
Computer Simulations of Cluster-Solid Interactions: Energetic Clusters and Soft Landings
Mai Ghaly
R. S. Averback
OriginalPaper 15 August 1992 Pages: 17 - 22
Computer Simulation of Channeling Effects in Ion Implantation
Matthias Posselt
OriginalPaper 15 August 1992 Pages: 23 - 28
Simulator for Dynamic Ion Beam Mixing
A. Seidl
K. Fujii
M. Takai
OriginalPaper 15 August 1992 Pages: 29 - 34
Computer Simulation of Heat Flow Induced by Laser Irradiation in Presence of Heat Sinks or Sources
Sebastiano Tosto
OriginalPaper 15 August 1992 Pages: 35 - 41
High-T_c Superconducting Films Irradiated with Low-Energy Oxygen Ion Beam
V. V. Phedotova
A. V. Zoubetz
A. I. Stognij
OriginalPaper 15 August 1992 Pages: 43 - 48
Damage Generation by Electronic Excitations in Crystalline Metals
A. Dunlop
D. Lesueur
OriginalPaper 15 August 1992 Pages: 51 - 54
Microstructure of Zr₃Al After 2 MeV Proton Bombardment
F. C. Chen
A. J. Ardell
R. A. Buhl
OriginalPaper 15 August 1992 Pages: 55 - 60
Dopant and Strain Dependence of Extended Defect Generation in Silicon by 1-MeV Electron Irradiation
Jan Vanhellemont
Albert Romano-Rodriguez
OriginalPaper 15 August 1992 Pages: 61 - 66
Structural Change of Graphite During Electron Irradiation
J. Koike
D. F. Pedraza
OriginalPaper 15 August 1992 Pages: 67 - 72
Point Defects in GaAs and Other Semiconductors
P. Ehrhart
K. Karsten
A. Pillukat
OriginalPaper 15 August 1992 Pages: 75 - 86
Deep-Penetration Mechanism of Ion-Irradiation Defects in Al_0.3Ga_0.7As/GaAs Heterostructure Investigated by In Situ Hall Measurement
Toshihiko Kanayama
Yukihiro Takeuchi
Yoshinobu Sugiyama
OriginalPaper 15 August 1992 Pages: 87 - 92
Substrate and Particle Dependent Deep Level Generation in Silicon by MeV Particle Beams
M.-A. Trauwaert
J. Vanhellemont
P. Clauws
OriginalPaper 15 August 1992 Pages: 93 - 98
Electron-Beam-Induced Damage in GaAs/AlGaAs Heterostructures
N. Tanaka
H. Kawanishi
T. Ishikawa
OriginalPaper 15 August 1992 Pages: 99 - 104
Cavities in He-Implanted Si: “Internal” Surface Science
D. M. Follstaedt
S. M. Myers
H. J. Stein
OriginalPaper 15 August 1992 Pages: 105 - 110
Formation of Buried Ternary Silicide Layers in Silicon by Ion Beam Synthesis (IBS)
D. Panknin
E. Wieser
J. Albrecht
OriginalPaper 15 August 1992 Pages: 111 - 116
Influence of Electric Field on the Formation of Neutron, Electron and γ -Ray Radiation Defects in Silicon
Wu Fengmei
Shi Yi
Zhao Lihua
OriginalPaper 15 August 1992 Pages: 117 - 122
ESR Study of Fluorine Implanted a-Si:H and a-C:H Thin Films
S. P. Wong
Shaoqi Peng
Pengxu Li
OriginalPaper 15 August 1992 Pages: 123 - 128
Energy Dependence of Amorphization of Ge by Kr Ions
R. C. Birtcher
OriginalPaper 15 August 1992 Pages: 129 - 134
Refractoriness of High-Current and Low Acceleration Voltage Arsenic-Ion Implanted Polycrystalline Silicon Against Fluorine Chemistry
Yasuyuki Saito
OriginalPaper 15 August 1992 Pages: 135 - 140
High Energy Heavy Ions Irradiation of Thermal SiO₂ Films on Si
Abdelilah Slaoui
Marie-Claude Busch
Paul Siffert
OriginalPaper 15 August 1992 Pages: 141 - 146
Reduction of Secondary Defects in High Energy O-Implanted Si by High Energy Si Irradiation
S. L. Ellingboe
M. C. Ridgway
OriginalPaper 15 August 1992 Pages: 147 - 152
Role of Oxygen Precipitation Processes in Defect Formation and Evolution in Oxygen Implanted Silicon-on-Insulator Material
J. C. Park
J. D. Lee
P. Roitman
OriginalPaper 15 August 1992 Pages: 153 - 158
Mechanism of Dose-Rate Dependence of Electrical Activation in Ion-Implanted GaAs
Toshihiko Kanayama
Hisao Tanoue
OriginalPaper 15 August 1992 Pages: 159 - 164
Electronic Stopping of Channeled Ions in Silicon
Gerhard Hobler
Hans W. Pötzl
OriginalPaper 15 August 1992 Pages: 165 - 170
Structural Phase Transition in Buried CoSi₂ Layers
W. G. Spanninga
A. R. Sandy
L. Niesen
OriginalPaper 15 August 1992 Pages: 171 - 176
Raman Spectroscopy Analysis of Nitrogen Ion Implantation in Silicon and Correlation with Transmission Electron Microscopy
A. PéRez-Rodríguez
A. Romano-Rodríguez
J. Montserrat
OriginalPaper 15 August 1992 Pages: 177 - 182
Ion Species Dependence of Electrical Characteristics in Ion Implanted GaAs
L. He
W. A. Anderson
OriginalPaper 15 August 1992 Pages: 183 - 188
Stability and Relaxation of Point Defects in amorphous silicon
Raymond Lutz
Laurent J. Lewis
OriginalPaper 15 August 1992 Pages: 189 - 194
Lattice Location of Supersaturated Arsenic Atoms in Silicon Studied by Channeled Ion Beam
Li Xu
Peihsin Tsien
Zhijian Li
OriginalPaper 15 August 1992 Pages: 195 - 200
Photoluminescence of Silicon Nanostructures Formed by Ion Beam Implantation
D. A. Redman
D. M. Follstaedt
M. Kelly
OriginalPaper 15 August 1992 Pages: 201 - 206
Residual Damage in Heavily Germanium-Doped Silicon
Esin Demirlioğlu
Sheldon Aronowitz
David Su
OriginalPaper 15 August 1992 Pages: 207 - 212
Synthesis of Critical Point Energies for 1 MeV Electron Irradiated P-Type Silicon
Onofrio L. Russo
Katherine A. Dumas
Michael H. Herman
OriginalPaper 15 August 1992 Pages: 213 - 218
The Enhanced Outdiffusion and Its Influence on the Impurity Behavior in the Implanted Si at Rapid Electron Beam Annealing
V. A. Kagadey
N. I. Lebedeva
L. V. Yakovleva
OriginalPaper 15 August 1992 Pages: 219 - 224
Defect Elimination by MeV Ion Implantation
S. Saito
M. Kumagai
T. Kondolt
OriginalPaper 15 August 1992 Pages: 225 - 230
High-Effective Ion-Implanted 6H-SiC Light Emitting Diodes with Å_max=535nm
A. V. Suvorov
P. A. Ivanov
A. Ioffe
OriginalPaper 15 August 1992 Pages: 231 - 235
Thin Ni Silicide Formation by Low Temperature-Induced Metal Atom Reaction with Ion Implanted Amorphous Silicon
Yu.N. Erokhin
B. K. Patnaik
G. A. Rozgonyi
OriginalPaper 15 August 1992 Pages: 237 - 241
Ion Beam Synthesis of IrSi₃ by Implantation of 2 MeV Ir Ions⁺
T. P. Sjoreen
H.-J. Hinneberg
M. F. Chisholm
OriginalPaper 15 August 1992 Pages: 243 - 248
Defect-Minimized SiGe Layer Using Ion Beam Synthesis
Seongil Im
Jack Washbum
Kin Man Yu
OriginalPaper 15 August 1992 Pages: 249 - 254
Ultra-Shallow P+/N Junctions Formed by SiF4 Preamorphization and BF3 Implantation Using Plasma Immersion Ion Implantation
Erin C. Jones
Seongil Im
Nathan W. Cheung
OriginalPaper 15 August 1992 Pages: 255 - 259
Evaluation of Subsurface Ion Implant Damage by Photothermal Displacement Measurement
Hiroyuki Takamatsu
Singo Sumie
Tohru Hara
OriginalPaper 15 August 1992 Pages: 261 - 266
Metal Induced Crystallization of Amorphous Silicon Thin Films
T. Hempel
O. Schoenfeld
P. Veit
OriginalPaper 15 August 1992 Pages: 267 - 272
Dose Rate Dependence of the Ion Beam Induced Epitaxial Crystallization in Silicon
V. Heera
R. KÖgler
R. GrÖtzschel
OriginalPaper 15 August 1992 Pages: 273 - 278
MeV Ion Implantation of Er into LiNbO₃
M. Fleuster
Ch. Buchal
W. Sohler
OriginalPaper 15 August 1992 Pages: 279 - 284
Colloid Formation in Implanted Glasses
G. W. Arnold
P. Mazzoldi
G. Battaglin
OriginalPaper 15 August 1992 Pages: 285 - 290
Optical Bleaching of Bismuth Implanted Silica Glass: A Threshold Effect
S. Y. Park
R. H. Magruder
R. A. Zuhr
OriginalPaper 15 August 1992 Pages: 291 - 296
Plasma Immersion ion Implantation of Semiconductors
N. W. Cheung
W. En
E. Jones
OriginalPaper 15 August 1992 Pages: 297 - 306
TiSi₂ Integrity within a Doped Silicide Process Step
G. M. Crean
P. D. Cole
J. Stoemenos
OriginalPaper 15 August 1992 Pages: 307 - 312
High-Current and Low Acceleration Voltage Arsenic Ion Implanted Polysilicon-Gate and Source-Drain Electrode Si MOS Transistor
Yasuyuki Saito
Yoshiro Sugimura
Michiyuki Sugihara
OriginalPaper 15 August 1992 Pages: 313 - 318
Retardation and Enhancement in Lateral Solid Phase Epitaxy of Si on SiO₂ by MeV Electron Beam Irradiation
S. Saito
H. Okabayashi
M. Komatsu
OriginalPaper 15 August 1992 Pages: 319 - 324

Volume 279, Issue 1

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