Volume 27, Issue 1

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December 1983

Symposium E – Ion Implantation and Ion Beam Processing of Materials

Issue Editors:

G. K. Hubler,
O. W. Holland,
C. R. Clayton,
C. W. White

119 articles in this issue

Ion Mixing Processes
Marc-A. Nicolet
T. C. Banwell
B. M. Paine
OriginalPaper 01 December 1983 Pages: 3 - 11
Ion-Induced Surface Modification of Alloys
H. Wiedersich
OriginalPaper 01 December 1983 Pages: 13 - 24
The Dependence of Ion Beam Mixing on Projectile Mass
R. S. Averback
L. J. Thompson
L. E. Rehn
OriginalPaper 01 December 1983 Pages: 25 - 29
Investigation of a Thermal Spike Model for Ion Mixing of Metals with SI
U. Shreter
Frank C. T. So
M.-A. Nicolet
OriginalPaper 01 December 1983 Pages: 31 - 36
Modification of µm Thick Surface Layers Using keV Ion Energies
L. E. Rehn
N. Q. Lam
H. Wiedersich
OriginalPaper 01 December 1983 Pages: 37 - 42
Anisotropic Transport of Impurities in Ion Mixing
S. Matteson
J. A. Keenan
R. F. Pinizzotto
OriginalPaper 01 December 1983 Pages: 43 - 48
Ion Beam Mixing Effects in Au-Fe and Pt-Fe Thin Bilayers
G. Battaglin
A. Carnera
P. Mazzoldi
OriginalPaper 01 December 1983 Pages: 49 - 54
Ion Beam Irradiation of Metal Films on SiO₂
G. J. Clark
J. E. E. Baglin
J. Narayan
OriginalPaper 01 December 1983 Pages: 55 - 60
Radiation Enhanced Diffusion in Ion-Implanted Glasses and Glass/Metal Couples
G. W. Arnold
OriginalPaper 01 December 1983 Pages: 61 - 66
Electrical Resistivity of Multilayers During Ion Beam Mixing
J. Grilhe
J. P. Riviere
C. Templier
OriginalPaper 01 December 1983 Pages: 67 - 71
Dose Dependence of Ion Beam Mixing of Au on Amorphous and Single Crystalline Si and Ge
D. B. Poker
O. W. Holland
B. R. Appleton
OriginalPaper 01 December 1983 Pages: 73 - 78
Study of Ion Bombardment-Induced SubSurface Compositional Modifications in Ni-Cu Alloys at Elevated Temperatures by Ion Scattering Spectroscopy
N. Q. Lam
H. A. Hoff
L. E. Rehn
OriginalPaper 01 December 1983 Pages: 79 - 84
Ion Mixing in the Ni-Sn System
L. Calliari
L. M. Gratton
C. Tosello
OriginalPaper 01 December 1983 Pages: 85 - 90
Boltzmann Approach to Cascade Mixing
Irwin Manning
OriginalPaper 01 December 1983 Pages: 91 - 95
Energy Dependence of Compound Growth in Au-Al and Cu-Al Bilayer Systems During Ion Beam Mixing
S. U. Campisano
Chu Techang
E. Rimini
OriginalPaper 01 December 1983 Pages: 97 - 102
The Effect of Atomic Mixing on the Depth Profiles of Metal Markers in Silicon
B. V. King
D. G. Tonn
J. A. Leavitt
OriginalPaper 01 December 1983 Pages: 103 - 108
Depth Dependence and Chemical Effects in Ion Mixing of Ni on SiO₂
T. C. Banwell
M.-A. Nicolet
OriginalPaper 01 December 1983 Pages: 109 - 114
Microstructural Developments During Implantation of Metals
D. I. Potter
M. Ahmed
S. Lamond
OriginalPaper 01 December 1983 Pages: 117 - 126
Amorphization of Thin Multilayer Films by Ion Mixing and Solid State Reaction
M. Van Rossum
U. Shreter
M.-A. Nicolet
OriginalPaper 01 December 1983 Pages: 127 - 132
Ion Mixing Kinetics of Thin Layered Films in the Fe-Al System
J. Grilhe
J. P. Riviere
C. Jaouen
OriginalPaper 01 December 1983 Pages: 133 - 138
Amorphization of Garnet by Ion Implantation
A. M. Guzman
T. Yoshiie
M. H. Kryder
OriginalPaper 01 December 1983 Pages: 139 - 144
Amorphous Phase Formation and Recrystallization in Ion-Implanted Silicides
C. A. Hewett
I. Suni
D. M. Scott
OriginalPaper 01 December 1983 Pages: 145 - 150
Second Phase Formation in Aluminum annealed after Ion Implantation with Molybdenum.
J. Bentley
L. D. Stephenson
J. K. Hirvonen
OriginalPaper 01 December 1983 Pages: 151 - 156
Modulated Structures in Ion Implanted Al-Fe System
K. V. Jata
D. Janoff
E. A. Starke Jr.
OriginalPaper 01 December 1983 Pages: 157 - 162
The Development of the Amorphous Phase in NiTi During Heavy Ion or Electron Bombardment
J. L. Brimhall
H. E. Kissinger
A. R. Pelton
OriginalPaper 01 December 1983 Pages: 163 - 168
Hvem and Internal Oxidation Studies of Lithiated Nickel
K. Seshan
P. Baldo
H. Wiedersich
OriginalPaper 01 December 1983 Pages: 169 - 174
Amorphous Soft Magnetic Material Formation by Ion Mixing
P. Gerard
G. Suran
P. Martin
OriginalPaper 01 December 1983 Pages: 175 - 180
High-Density Cascade Effects in Ion-Implanted Ag-Au Alloy
F. R. Vozzo
OriginalPaper 01 December 1983 Pages: 181 - 186
A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques
J. C. Soares
A. A. Melo
R. Vianden
OriginalPaper 01 December 1983 Pages: 187 - 192
Ion Induced Morphological Instabilities in Ge
B. R. Appleton
OriginalPaper 01 December 1983 Pages: 195 - 204
The Production of Porous Structures on Si, Ge and GaAs by High Dose Ion Implantation
J. S. Williams
D. J. Chivers
K. T. Short
OriginalPaper 01 December 1983 Pages: 205 - 210
Thermodynamics and Kinetics of Crystallization of Amorphous Si and Ge Produced by Ion Implantation
E. P. Donovan
F. Spaepen
D. C. Jacobson
OriginalPaper 01 December 1983 Pages: 211 - 216
Physical Properties of Two Metastable States of Amorphous Silicon
G. K. Hubler
C. N. Waddell
T. A. Kennedy
OriginalPaper 01 December 1983 Pages: 217 - 222
Implantation Induced Filamentary Structures
C. Jaussaud
B. Maillot
M. Bruel
OriginalPaper 01 December 1983 Pages: 223 - 228
Epitaxial Crystallisation of Doped Amorphous Silicon
R. G. Elliman
S. T. Johnson
J. S. Williams
OriginalPaper 01 December 1983 Pages: 229 - 234
High Current Density Implantation and Ion Beam Annealing in Si
O. W. Holland
J. Narayan
OriginalPaper 01 December 1983 Pages: 235 - 239
Ion-Beam Processing of Ion-Implanted Si
H. B. Dietrich
R. J. Corazzi
W. F. Tseng
OriginalPaper 01 December 1983 Pages: 241 - 245
Ion-Beam-Induced Damaging and Dynamic Annealing Processes in Silicon
K. T. Short
D. J. Chivers
J. S. Williams
OriginalPaper 01 December 1983 Pages: 247 - 252
Megavolt Bioron and Arsenic Implantation into Silicon
P. F. Byrne
N. W. Cheung
M. Strathman
OriginalPaper 01 December 1983 Pages: 253 - 258
Lattice Site Location of Group VII Impurities in Silicon
D. O. Boerma
P. J. M. Smulders
T. S. Wierenga
OriginalPaper 01 December 1983 Pages: 259 - 264
A Review of Silicon-On-Insulator Formation by Oxygen Ion Implantation
Russell F. Pinizzotto
OriginalPaper 01 December 1983 Pages: 265 - 274
Formation of Oxide Layers by High Dose Implantation into Silicon
S. S. Gill
I. H. Wilson
OriginalPaper 01 December 1983 Pages: 275 - 280
Characterisation of Device Grade Soi Structures formed by Implantation of High Doses of Oxygen
P. L. F. Hemment
E. A. Maydell-Ondrusz
J. B. Butcher
OriginalPaper 01 December 1983 Pages: 281 - 286
Characterization of N-Type Layers Formed in Si by Ion Implantation of Hydrogen
S. R. Wilson
W. M. Paulson
F. D. Mcdaniel
OriginalPaper 01 December 1983 Pages: 287 - 292
Point defect Supersaturation and Enhanced Diffusion in SPE Regrown Silicon.^*
S. J. Pennycook
J. Narayan
O. W. Holland
OriginalPaper 01 December 1983 Pages: 293 - 298
Characterization of Ion Implanted Silicon by Spectroscopic Ellipsometry and Cross Section Transmission Electron Microscopy
P. J. Mcmarr
K. Vedam
J. Narayan
OriginalPaper 01 December 1983 Pages: 299 - 304
Spatial Correlation Interpretation of Effects of As⁺ Implantation on the Raman Spectra of GaAs
D. E. Aspnes
K. K. Tiong
F. H. Pollak
OriginalPaper 01 December 1983 Pages: 305 - 309
High Resolution Transmission Electron Microscopy Study of Se⁺ Implanted and Annealed GaAs
D. K. Sadana
T. Sands
J. Washburn
OriginalPaper 01 December 1983 Pages: 311 - 316
Ion Implantation in Gallium Indium Arsenide
M. Anjum
M. A. Shahid
J. H. Marsh
OriginalPaper 01 December 1983 Pages: 317 - 322
Ion Implantation Damage in CdS Crystals Using RBS/Channeling and Tem
N. R. Parikh
D. A. Thompson
V. S. Raghunathan
OriginalPaper 01 December 1983 Pages: 323 - 328

Volume 27, Issue 1

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