Volume 241, Issue 1

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December 1991

Symposium F — Low Temperature(LT) GaAs and Related Materials

Issue Editors:

R. Calawa,
U. Mishra,
E. Weber,
G. L. Witt

41 articles in this issue

Device Applications of Low-Temperature-Grown GaAs
Frank W. Smith
OriginalPaper 01 August 1991 Pages: 3 - 12
The Electrical and Optical Properties of GaAs with as Precipitates (GaAs:As)
A. C. Warren
J. M. Woodall
X. Yin
OriginalPaper 01 August 1991 Pages: 15 - 25
Incorporation of Silicon in Low Temperature Molecular Beam Epitaxial GaAs
M. O. Manasreh
K. R. Evans
J. Hemsky
OriginalPaper 01 August 1991 Pages: 27 - 31
Transport Modeling and Compensation Mechanism for Semi-Insulating LT-Gaas and InP: Cu
K. Xie
C. R. Wie
OriginalPaper 01 August 1991 Pages: 33 - 38
Insulating and Breakdown Characteristics of Low Temperature GaAs
H. L. Grubin
J. P. Kreskovsky
R. Levy
OriginalPaper 01 August 1991 Pages: 39 - 44
Characterization of Electrical Properties of Low Temperature GaAs
Bin Wu
Ashish Verma
Shyh Wang
OriginalPaper 01 August 1991 Pages: 45 - 50
Effect of Growth Conditions on Optical Response of GaAs Grown at Low Substrate Temperature by MBE
W. J. Schaff
S. D. Offsey
G. A. Mourou
OriginalPaper 01 August 1991 Pages: 51 - 56
Defects in Low-Temperature-Grown MBE GaAs as Studied by a Variation of TSC Spectroscopy
Z-Q Fang
D. C. Look
OriginalPaper 01 August 1991 Pages: 57 - 62
Study of Deep Levels in LT-GaAs Materials and SI-GaAs Wafers by an Improved Thermoelectric Effect Spectroscopy
Z. C. Huang
C. R. Wie
OriginalPaper 01 August 1991 Pages: 63 - 68
Electron Paramagnetic Resonance Study of Low Temperature Molecular Beam Epitaxy Grown GaAs and InP Layers
H. J. von Bardeleben
Y. Q. Jia
K. R. Evans
OriginalPaper 01 August 1991 Pages: 69 - 74
Optically Detected Magnetic Resonance of Arsenic Antisites in GaAs MBE Layers Grown at Low Temperatures
F. C. Rong
L. Fotiadis
W. H. Chang
OriginalPaper 01 August 1991 Pages: 75 - 80
Cathodoluminescence and Photoluminescence Spectroscopy Study of Low Temperature Molecular Beam Epitaxy GaAs
R. Enrique Viturro
Michael R. Melloch
Jerry M. Woodall
OriginalPaper 01 August 1991 Pages: 81 - 86
Photoreflectance and X-Ray Photoelectron Spectroscopy in Lt MBE GaAs
D. C. Look
J. E. Hoelscher
M. Numan
OriginalPaper 01 August 1991 Pages: 87 - 92
Annealing Characteristics Of Low Temperature Grown GaAs:Be
D. E. Bliss
W. Walukiewicz
E. E. Haller
OriginalPaper 01 August 1991 Pages: 93 - 98
Crystal Structure Of Lt Gaas Layers Before And After Annealing
Zuzanna Liliental-Weber
OriginalPaper 01 August 1991 Pages: 101 - 112
Incorporation of Excess Arsenic in GaAs and AlGaAs Epilayers Grown at Low Substrate Temperatures by Molecular Beam Epitaxy
M. R. Melloch
N. Otsuka
P. D. Kirchner
OriginalPaper 01 August 1991 Pages: 113 - 124
X-Ray Diffraction Studies of Low Temperature GaAs
G. Kowaljki
M. Leszcjynski
E. R. Weber
OriginalPaper 01 August 1991 Pages: 125 - 129
Surface Acoustic Wave Detection of Large Lattice Relaxation of Metastable EL2 in LT-GaAs
Ken Khachaturyan
Eicke R. Weber
Richard M. White
OriginalPaper 01 August 1991 Pages: 131 - 136
Defect Model and Growth Characteristics of Low Temperature GaAs
M. Fatemi
B. Tadayon
S. Tadayon
OriginalPaper 01 August 1991 Pages: 137 - 144
An Investigation on the Lattice Site Location of the Excess Arsenic Atoms in GaAs layers Grown by Low Temperature Molecular Beam Epitaxy
Kin Man Yu
Z. Liliental-Weber
OriginalPaper 01 August 1991 Pages: 145 - 150
Surface Ordering of MBE Grown 001 Ga
Rita Trivedi
R. Venkatasubramanian
OriginalPaper 01 August 1991 Pages: 151 - 156
Electronic and Optoelectronic Applications of Materials Grown at a Low Temperature by MBE
U. K. Mishra
R. M. Kolbas
OriginalPaper 01 August 1991 Pages: 159 - 170
Material and Device Characteristics of MBE Microwave Power FETs with Buffer Layers Grown at Low Temperature (300°C)
J. M. Ballingall
Pin Ho
Gudrun Hutchins
OriginalPaper 01 August 1991 Pages: 171 - 179
Study of Modulation in GaAs Misfets with LT-GaAs as a Gate Insulator
L.-W. Yin
J. Ibbetson
U. K. Mishra
OriginalPaper 01 August 1991 Pages: 181 - 186
Study of Transport Through Low-Temperature GaAs Surface Insulator Layers
J. P. Ibbetson
L.-W. Yin
U. K. Mishra
OriginalPaper 01 August 1991 Pages: 187 - 192
A Gate Breakdown Mechanism in Mesfets and HEMTs
R. J. Trew
T. A. Winslow
U. K. Mishra
OriginalPaper 01 August 1991 Pages: 193 - 198
Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material
Bijan Tadayon
Mohammad Fatemi
Harry Dietrich
OriginalPaper 01 August 1991 Pages: 199 - 204
Ultrafast Properties and Applications of GaAs and InP Based Materials Grown by MBE at Low Temperatures
S. Gupta
G. Mourou
A. R. Calawa
OriginalPaper 01 August 1991 Pages: 205 - 215
A High Performance Optically Gated Heterostructure Thyristor Passivated with LT-GaAs
J. H. Zhao
T. Burke
T.-H. Yu
OriginalPaper 01 August 1991 Pages: 217 - 222
Picosecond High-Voltage Pulses Generation Using Low-Temperature (LT) GaAs
T. Motet
J. Nees
G. Mourou
OriginalPaper 01 August 1991 Pages: 223 - 226
Multi-Hundred Gigahertz Photodetector Development Using LT GaAs
Y. Chen
S. Williamson
A. R. Calawa
OriginalPaper 01 August 1991 Pages: 227 - 232
Long Wavelength Characterization of Internal Quantum Efficiency in LT-GaAs MSM Photodiodes
Jeffrey D. Morse
Raymond P. Mariella Jr.
OriginalPaper 01 August 1991 Pages: 233 - 237
Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs
Y. Hwang
D. Zhang
R. M. Kolbas
OriginalPaper 01 August 1991 Pages: 239 - 244
Molecular Beam Epitaxy of Low Temperature Grown GaAs Photoconductors
D. R. Dykaar
D. J. Eaglesham
K. W. West
OriginalPaper 01 August 1991 Pages: 245 - 250
A New Structure for a Superconducting Field Effect Transistor
Stéphane Tyc
Alain Schuhl
OriginalPaper 01 August 1991 Pages: 251 - 256
The Use of Low Temperature AlInAs and GalnAs Lattice Matched to InP in the Fabrication of HBTs and HEMTs
R. A. Metzger
A. S. Brown
J. A. Henige
OriginalPaper 01 August 1991 Pages: 259 - 264
InP Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperature
K. Xie
C. R. Wie
G. W. Wicks
OriginalPaper 01 August 1991 Pages: 265 - 270
Growth and Characterization of Low Temperature InP by Gas Source MBE
G. N. Maracas
K. T. Shiralagi
R. W. Carpenter
OriginalPaper 01 August 1991 Pages: 271 - 276
Structural and Defect Study of Low Temperature INP Grown by Gas Source Molecular Beam Epitaxy
J. Ch. Garcia
J. P. Hirtz
J. C. Bourgoin
OriginalPaper 01 August 1991 Pages: 277 - 282
Low-Temperature Growth and Characterization of InP Grown by Gas-Source Molecular-Beam Epitaxy
B. W. Liang
Y. He
C. W. Tu
OriginalPaper 01 August 1991 Pages: 283 - 288
TEM and HREM Studies of As-Grown Low-Temperature Molecular Beam Epitaxial In
A. Claverie
Z. Liliental-Weber
G. Mourou
OriginalPaper 01 August 1991 Pages: 289 - 294

Volume 241, Issue 1

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