1. Evening Panel Session (November 16, 1983) SOI Technologies for Integrated Circuits

   • John C. C. Fan
   • Y. Akasaka
   • P. J. Vail

   OriginalPaper 01 March 1983 Pages: 3 - 6

2. Fundamentals of Energy Beam Interactions with Solids

   • W. L. Brown

   OriginalPaper 01 March 1983 Pages: 9 - 23

3. Applications of Energy Beams in Material and Device Processing

   • G. J. Galvin
   • L. S. Hung
   • M. Nastasi

   OriginalPaper 01 March 1983 Pages: 25 - 35

4. Device Applications of Rapid Thermal Processing

   • J. F. Gibbons
   • D. M. Dobkin
   • W. G. Opyd

   OriginalPaper 01 March 1983 Pages: 37 - 50

5. Femtosecond Time Resolved Surface Structural Dynamics of Optically Excited Silicon

   • C. V. Shank
   • R. Yen
   • C. Hirlimann

   OriginalPaper 01 March 1983 Pages: 53 - 56

6. Picosecond Time-Resolved Optical Studies of Plasma Formation and Lattice Heating in Silicon

   • L. A. Lompré
   • J. M. Liu
   • N. Bloembergen

   OriginalPaper 01 March 1983 Pages: 57 - 62

7. Two-Color Picosecond Measurements on Electron-Hole Plasmas Close to the Melting Phase Transition

   • P. M. Fauchet
   • A. E. Siegman

   OriginalPaper 01 March 1983 Pages: 63 - 68

8. Infrared Measurement of Carrier Density, Lattice Temperature and Melt Depth during Nanoseoond Pulsed Laser Annealing of Silicon and Germanium

   • J. S. Preston
   • H. M. van Driel
   • J. E. Sipe

   OriginalPaper 01 March 1983 Pages: 69 - 74

9. Luminescence Spectroscopy on Highly Excited Si - Experimental Determination of the Plasma Drift Velocity

   • B. Laurich
   • A. Forchel

   OriginalPaper 01 March 1983 Pages: 75 - 80

10. Laser-Solid Interactions: Localization of Momentum and of Energy

    • J. A. Van Vechten

    OriginalPaper 01 March 1983 Pages: 81 - 92

11. Measurement of Ultrafast Melting and Regrowth Velocities in Pulsed Laser Heated Silicon

    • Philip H. Bucksbaum
    • Jeffrey Bokor

    OriginalPaper 01 March 1983 Pages: 93 - 98

12. Pulsed Laser Melting of Amorphous Silicon: Time-Resolved and Post-Irradiation Studies

    • D. H. Lowndes
    • R. F. Wood
    • J. Narayan

    OriginalPaper 01 March 1983 Pages: 99 - 104

13. Ultra-Fast Melting and Solidification Behaviour of Amorphous and Crystalline Silicon

    • A. G. Cullis
    • H. C. Webber
    • N. G. Chew

    OriginalPaper 01 March 1983 Pages: 105 - 110

14. Pulsed Laser Melting: The Effect of Implanted Solutes on the Resolidification Velocity

    • G. J. Galvin
    • J. W. Mayer
    • P. S. Peercy

    OriginalPaper 01 March 1983 Pages: 111 - 116

15. Raman Scattering in Ultra Heavily Doped Si and Ge: The Dependence on Free Carrier and Substitutional Dopant Densities

    • A. Compaan
    • G. Contreras
    • A. Axmann

    OriginalPaper 01 March 1983 Pages: 117 - 122

16. Time Resolved Spectra of Raman and Thermal Emission during Pulsed Laser Heating of Silicon

    • D. Von Der Linde
    • G. Wartmann
    • Zhen-He Zhu*

    OriginalPaper 01 March 1983 Pages: 123 - 128

17. Low Energy Electron Diffraction During Pulsed Laser Annealing: A Time Resolved Surface Structural Study

    • R. S. Becker
    • G. S. Higashi
    • J. A. Golovchenko

    OriginalPaper 01 March 1983 Pages: 129 - 134

18. Photoelectric Emission Studies from Crystalline Silicon at 266 NM

    • A. M. Malvezzi
    • J. M. Liu
    • N. Bloembergen

    OriginalPaper 01 March 1983 Pages: 135 - 139

19. Solidification of Highly Undercooled Silicon: Bulk Nucleation and Amorphous Phase Formation

    • R. F. Wood
    • D. H. Lowndes
    • J. Narayan

    OriginalPaper 01 March 1983 Pages: 141 - 146

20. Germanium Extremely Heavily Doped by Ion-Implantation and Laser Annealing: A Photoluminescence Study

    • J. Wagner
    • G. Contreras
    • A. Axmann

    OriginalPaper 01 March 1983 Pages: 147 - 152

21. Stress Effects on Raman Measurements of Pulsed Laser Annealed Silicon

    • G. E. Jellison Jr.
    • R. F. Wood

    OriginalPaper 01 March 1983 Pages: 153 - 158

22. Optical Properties of Laser Induced Heavily Doped Silicon Layers

    • A. Slaoui
    • E. Fogarassy
    • M. Balkanski

    OriginalPaper 01 March 1983 Pages: 159 - 165

23. Time-Resolved Si Lattic-Temperature Measurement On Wide Time Scale (10⁻⁹ - 10⁰ sec.) During Laser Annealing

    • Kouichi Murakami
    • Hisayoshi Itoh
    • Kohzoh Masuda

    OriginalPaper 01 March 1983 Pages: 167 - 172

24. Reflectivity of Silicon-On-Sapphire during Pulsed Laser Annealing

    • Y. H. Chen
    • S. A. Lyon

    OriginalPaper 01 March 1983 Pages: 173 - 177

25. Melting Phenomena and Impurity Redistribution during Pulsed Laser Irradiation of Amorphous Silicon Layers

    • J. Narayan
    • C. W. White
    • O. W. Holland

    OriginalPaper 01 March 1983 Pages: 179 - 188

26. Laser Quenching of Amorphous Si from the Melt Containing Dopants

    • S. U. Campisano
    • D. C. Jacobson
    • N. G. Chew

    OriginalPaper 01 March 1983 Pages: 189 - 192

27. Concentration-Independent Solute Segregation in Laser Annealing of Semiconductor Crystals

    • Jun-ichi Chikawa
    • Fumio Sato
    • Tadasu Sunada

    OriginalPaper 01 March 1983 Pages: 193 - 198

28. Instability at the Melting Threshold of Laser Irradiated Silicon as the Underlying Origin of the Ripples Formation

    • M. Combescot
    • J. Bok
    • C. Benoit A La Guillaume

    OriginalPaper 01 March 1983 Pages: 199 - 202

29. Initial Observation of the Crystal-Amorphous Transition and the Formation of Ripple Patterns on Silicon Induced by 7 ps Pulses at 1.05 μm

    • Ian W. Boyd
    • Steven C. Moss
    • Arthur L. Smirl

    OriginalPaper 01 March 1983 Pages: 203 - 208

30. Optical Response of Electron-Hole Plasma in Surface Excited Semiconductors

    • A. Forchel
    • H. Schweizer
    • G. Mahler

    OriginalPaper 01 March 1983 Pages: 209 - 214

31. Semiconductor Processing with Excimer Lasers: An Overview

    • R. T. Young

    OriginalPaper 01 March 1983 Pages: 217 - 227

32. CW Laser Annealed Small-Geometry NMOS Transistors

    • A. A. Naem
    • A. R. Boothroyd
    • I. D. Calder

    OriginalPaper 01 March 1983 Pages: 229 - 234

33. Relaxation Behavior of Metastable as and P Concentrations in Si After Pulsed and CW Laser Annealing

    • J. Goetzlich
    • P. H. Tsien
    • H. Ryssel

    OriginalPaper 01 March 1983 Pages: 235 - 240

34. Multiple Layer Sputter Deposition and Laser Annealing of Silicon Films

    • W. W. Anderson
    • H. F. Mac Millan
    • M. Lopez

    OriginalPaper 01 March 1983 Pages: 241 - 246

35. Structural and Electrical Properties of Gas Immersion Laser Doped Layers in Crystalline Silicon

    • T. W. Sigmon
    • P. G. Carey
    • R. J. Pressley

    OriginalPaper 01 March 1983 Pages: 247 - 252

36. Rapid Annealing of Silicon

    • R. T. Hodgson
    • V. Deline
    • J. Gelpey

    OriginalPaper 01 March 1983 Pages: 253 - 257

37. Some Results Concerning the Residual Stresses Distribution in Laser Treated Samples

    • C. Chabrol
    • G. Coquerelle
    • A. Vannes

    OriginalPaper 01 March 1983 Pages: 259 - 265

38. Lattice Temperature of GaAs and Si during Nanosecond Laser Annealing

    • A. Pospieszczyk
    • M. Abdel Harith
    • B. Stritzker

    OriginalPaper 01 March 1983 Pages: 267 - 272

39. Large Area Continuous Electron Beam for Semiconductor Processing

    • Cameron A. Moore
    • J. J. Rocca
    • J. Geller

    OriginalPaper 01 March 1983 Pages: 273 - 278

40. Transient Annealing of Boron Implanted Devices

    • S. R. Wilson
    • W. M. Paulson
    • J. D. Whitfield

    OriginalPaper 01 March 1983 Pages: 279 - 284

41. Influence of Rapid Thermal Annealing on Shallow BF₂ Implantation into Pre-Amorphized Silicon

    • W. Maszara
    • C. Carter
    • G. A. Rozgonyi

    OriginalPaper 01 March 1983 Pages: 285 - 291

42. Short Time Annealing of As and B Ion Implanted Si using Tungsten-Halogen Lamps

    • T. O. Sedgwick
    • R. Kalish
    • S. C. Shatas

    OriginalPaper 01 March 1983 Pages: 293 - 296

43. The Effects of Thermal and Transient Annealing on the Redistribution of Indium Implanted Silicon

    • W. Katz
    • G. A. Smith
    • E. F. Koch

    OriginalPaper 01 March 1983 Pages: 299 - 302

44. Germanium Implantation into Silicon: An Alternate Pre-Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Technology

    • D. K. Sadana
    • E. Myers
    • G. A. Rozgonyi

    OriginalPaper 01 March 1983 Pages: 303 - 308

45. Electron Beam Annealing of Shallow BF₂ Implantations

    • C. Jaussaud
    • A. M. Cartier
    • J. Escaron

    OriginalPaper 01 March 1983 Pages: 309 - 313

46. CW Backside Laser Gettering

    • Gilbert Hawkins
    • George Erikson

    OriginalPaper 01 March 1983 Pages: 315 - 320

47. New Reliable Structure for High Temperature Measurement of Silicon Wafers Using a Specially Attached Thermocouple

    • S. A. Cohen
    • T. O. Sedgwick
    • J. L. Speidell

    OriginalPaper 01 March 1983 Pages: 321 - 324

48. Ultrafast UV-Laser Induced Oxidation of Silicon

    • T. E. Orlowski
    • H. Richter

    OriginalPaper 01 March 1983 Pages: 327 - 331

49. Rapid Thermal Annealing of Ion-Implanted Silicon and Gallium Arsenide

    • J. Narayan

    OriginalPaper 01 March 1983 Pages: 335 - 345

50. Electronic Defects in Silicon after Transient Isothermal Annealing

    • G. Pensl
    • M. Schulz
    • J. Hoyt

    OriginalPaper 01 March 1983 Pages: 347 - 358