Volume 224, Issue 1 | MRS Online Proceedings Library

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Volume 224, Issue 1

December 1991

Symposium F — Rapid Thermal and Integrated Processing I

Issue Editors:

J. C. Gilpey,
M. L. Green,
R. Singh,
J. Wortman

45 articles in this issue

In Situ Wafer Emissivity Variation Measurement in a Rapid Thermal Processor
J-M. Dilhac
C. Ganibal
N. Nolhier
OriginalPaper 15 February 1991 Pages: 3 - 8
Temperature Control and System Design Aspects in Rapid Thermal Processing
Fred Roozeboom
OriginalPaper 15 February 1991 Pages: 9 - 16
Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control
Hisham Z. Massoud
Ronald K. Sampson
Eugene A. Irene
OriginalPaper 15 February 1991 Pages: 17 - 22
Ripple Technique; a Novel Non-Contact Wafer Emissivity and Temperature Method for RTP
C. Schietinger
B. Adams
C. Yarling
OriginalPaper 15 February 1991 Pages: 23 - 31
The Behavior of Free-Carriers During Rapid Thermal Annealing of Doped Silicon
B. Lojek
OriginalPaper 15 February 1991 Pages: 33 - 38
In-Situ Temperature Estimation in Rapid Thermal Processing Systems using Extended Kalman Filtering
Y. M. Cho
C. D. Schaper
T. Kailath
OriginalPaper 15 February 1991 Pages: 39 - 46
The Nature of Electrically Inactive Implanted Arsenic in Silicon after Rapid Thermal Annealing
John L. Altrip
Alan G.R. Evans
John R. Logan
OriginalPaper 15 February 1991 Pages: 49 - 54
The Gettering and Electrical Activity of Ni, Au, and Cu in Epitaxial Si/Si(2%Ge)/Si during RTA
Tian-Qun Zhou
Andrzej Buczkowski
George A. Rozgonyi
OriginalPaper 15 February 1991 Pages: 55 - 60
Synchrotron X-Ray Topography as a Non-Destructive Monitor of Damage Accompanying IC Processing
Michael Dudley
Franklyn F.Y. Wang
David Gordon-Smith
OriginalPaper 15 February 1991 Pages: 61 - 66
Diffusion Barriers with Sputtered TaN, Ta-Si-N, and TaSi_x for Thermal Stable Contact
W. G. Wang
C. S. Chang
F. S. Huang
OriginalPaper 15 February 1991 Pages: 67 - 73
Variation of Thermal Donors in Diffused Wafers by rapid Thermal Annealing
Takahide Sugiyama
Akira Usami
Takao Wada
OriginalPaper 15 February 1991 Pages: 75 - 80
Investigation of Metal Induced Surface Defects in Czochralski Si Following Rapid Thermal Processing by Thermal Wave Modulated Reflectance Method
S. Hahn
W. L Smith
K. D. Kwack
OriginalPaper 15 February 1991 Pages: 81 - 88
Rapid Isothermal Processing of Strained GeSi Layers
D. K. Nayak
K. Kamjoo
K. L. Wang
OriginalPaper 15 February 1991 Pages: 89 - 94
Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers
Akira Usami
Taichi Natori
Takao Wada
OriginalPaper 15 February 1991 Pages: 95 - 100
Dependence of Substrate Orientation on the Synthesis of CoSi₂ Layers Formed by Ion Implantation & Rapid Thermal Annealing
Russell M Gwilliam
Karen J Reeson
Brian J Sealy
OriginalPaper 15 February 1991 Pages: 103 - 108
Low Resistivity CoSi₂ Surface Layers for Use as Contacts in CMOS Processes
Sarah A. Audet
Conor S. Rafferty
Yong-Fen Hsieh
OriginalPaper 15 February 1991 Pages: 109 - 114
Nucleation, Transformation and Agglomeration of C54 Phase Titanium Disilicide
R. W. Mann
C. A. Racine
R. S. Bass
OriginalPaper 15 February 1991 Pages: 115 - 122
Rapid Thermal Annealing of Titanium in an Ammonia Ambient: Kinetics and Film Properties
K. Srikrishna
R. Jairath
G. Huglin
OriginalPaper 15 February 1991 Pages: 123 - 128
Formation of Titanium Silicide by Multiple Arsenic Implantations and Ion Beam Mixing
Po-Ching Chen
Jian-Yang Lin
Huey-Liang Hwang
OriginalPaper 15 February 1991 Pages: 129 - 134
Optical Properties of Growth Phases Formed by Rapid Thermal Annealing of MoSi_x thin Films on Si (100)
G. Srinivas
R. S. Rastogi
V. D. Vankar
OriginalPaper 15 February 1991 Pages: 135 - 140
In-Situ Fabrication and Process Control Techniques in Rapid Thermal Processing
Mehrdad M. Moslehi
John Kuehne
Cecil J. Davis
OriginalPaper 15 February 1991 Pages: 143 - 157
Is There a Way to a Perfect Rapid Thermal Processing System
R. Kakoschke
OriginalPaper 15 February 1991 Pages: 159 - 170
Impacts of Temperature and Reactant Flow Rate Transients on LPCVD Tungsten Silicide Film Properties
T. S Cale
J.-H. Park
M. K. Jain
OriginalPaper 15 February 1991 Pages: 171 - 176
Improvement of Temperature Uniformity in Rapid Thermal Processing Systems Using Multivariable Control
S. A. Norman
C. D. Schaper
S. P. Boyd
OriginalPaper 15 February 1991 Pages: 177 - 183
Temperature Control and Temperature Uniformity During Rapid Thermal Processing
Peter Vandenabeele
Karen Maex
OriginalPaper 15 February 1991 Pages: 185 - 196
Role of Photoeffects in Integrated Rapid Isothermal Processing
R. Singh
S. Sinha
N. J. Hsu
OriginalPaper 15 February 1991 Pages: 197 - 202
Thermal Effects of Gasses in Rapid Thermal Processing
K. L. Knutson
S. A. Campbell
J. D. Leighton
OriginalPaper 15 February 1991 Pages: 203 - 208
Temperature Uniformity Optimization Using Three-Zone Lamp and Dynamic Control in Rapid Thermal Multiprocessor
Pushkar P. Apte
Samuel Wood
Mehrdad M. Moslehi
OriginalPaper 15 February 1991 Pages: 209 - 214
Contactless Measurements of Slip Lines Intentionally Introduced in Si Wafers During Rapid Thermal Processing
H. Shiraki
H. Fujiwara
T. Wada
OriginalPaper 15 February 1991 Pages: 215 - 220
Rapid Thermal Chemical Vapor Deposition of Germanium and Germanium/Silicon Alloys on Silicon: New Applications in the Fabrication of MOS Transistors
M. C. Ozturk
D. T. Grider
J. J. Wortman
OriginalPaper 15 February 1991 Pages: 223 - 234
Low Temperature Epitaxial Silicon Growth in a Rapid Thermal Processor
D. W. McNeill
H. S. Gamble
B. M. Armstrong
OriginalPaper 15 February 1991 Pages: 235 - 240
Growth of Epitaxial Silicon Carbide on Silicon by Rapid Thermal LPCVD
F. H. Ruddell
B. M. Armstrong
H. S. Gamble
OriginalPaper 15 February 1991 Pages: 241 - 146
Microstructure and Kinetic Analysis of the Initial Stages of SiC Formation in a Rapid Thermal Processor
Ki-Bum Kim
Jimmy C. Liao
Eileen A. Sullivan
OriginalPaper 15 February 1991 Pages: 247 - 252
Single-Wafer RTCVD of Polysilicon: a Complementary Step in Front-End Integrated Processing
Ahbmad Kermani
OriginalPaper 15 February 1991 Pages: 253 - 260
Application of RTP-CVD Technology to Ulsi Device Fabrication
K. H. Jung
T. Y. Hsieh
D. L. Kwong
OriginalPaper 15 February 1991 Pages: 261 - 270
Demonstration of Multiprocessing by Silicon Epitaxy Following In-Situ Cleaning
Pushkar P. Apte
Ramnath Venkatraman
Richard Yeakley
OriginalPaper 15 February 1991 Pages: 273 - 278
Characterization of Preclean Induced Surface Damage by Rapid Thermal Processing
T. Y. Hsieh
K. H. Jung
J. C. Thompson
OriginalPaper 15 February 1991 Pages: 279 - 284
Si and Ge_xSi_1-x Epitaxial Growth on SOI Structures by Rapid Thermal Processing Chemical Vapor Deposition
T. Y. Hsieh
K. H. Jung
H. L. Marcus
OriginalPaper 15 February 1991 Pages: 285 - 290
A New Recrystallization Technique for Large Area Thin Film Silicon on Glass Structure
Hiroshi Hayama
Masahito Mukainari
Takeshi Saito
OriginalPaper 15 February 1991 Pages: 293 - 298
Photo Induced Deposition of Thin Silicon Dioxide Films Using a Novel Large Area Excimer Lamp
P. Patel
U. Kogelschatz
I. W. Boyd
OriginalPaper 15 February 1991 Pages: 299 - 304
Rapid Thermal Processing of Ferroelectric Thin Films
Zheng Wu
Roberto Pascual
Michael Sayer
OriginalPaper 15 February 1991 Pages: 305 - 310
Rapid Thermal Processing and Properties of Sol-Gel Derived Ferroelectric Thin-Films for Non-Volatile Memories.
C. K. Barlingay
S. K Dey
OriginalPaper 15 February 1991 Pages: 311 - 316
Activation of Sb in Ultra-Shallow Poly-Silicon Emitters Using Rapid Thermal Processing.
Ö. Grelsson
A. Söderbärg
B. Mohadjeri
OriginalPaper 15 February 1991 Pages: 317 - 322
ArF Excimer Laser-Enhanced Photochemical Vapor Deposition of Homoepitaxial Silicon from Disilane
B. Fowler
S. Lian
S. Banerjee
OriginalPaper 15 February 1991 Pages: 323 - 328
Lateral Uniformity of Ultra-Shallow Junctions Formed by Rapid Thermal Annealing in Polysilicon-on-Silicon Systems
S. Batra
K. Park
B. Mulvaney
OriginalPaper 15 February 1991 Pages: 329 - 334