Volume 223, Issue 1

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December 1991

Symposium E — Low Energy Ion Beam and Plasma Modification of Materials

Issue Editors:

Steven M. Gorbatkin,
James M. E. Harper,
John R. McNeil,
Kiyoshi Miyake

52 articles in this issue

Argon Plasma Induced Surface Modifications For Resistless Patterning of Aluminium Films
R. D. Tarey
K. L. Chopra
OriginalPaper 15 February 1991 Article: 389
Magnetron-Enhanced Reactive-Ion-Etching of Al-1%Si-2%Cu Alloy
C. Y. Fu
R. Hsu
V. Malba
OriginalPaper 15 February 1991 Article: 385
Selective Copper Plating in Silicon Dioxide Trenches with Metal Plasma Immersion Ion Implantation
Meng-Hsiung Kiang
Carey A. Pico
K. M. Yu
OriginalPaper 15 February 1991 Article: 377
Plasma Immersion Surface Modification With Metal Ion Plasma
I. G. Brown
X. Godechot
K. M. Yu
OriginalPaper 15 February 1991 Article: 371
The Influence of Ion Bombardment on the Surface Composition of 70 wt% Cu-30 wt% Zn Alpha-Brass
Vjekoslav Franetovic
OriginalPaper 15 February 1991 Article: 365
The Effects of Ion Energy on Carbon and Tungsten Films Fabricated by Direct Ion Beam Deposition and Ion Beam Sputtering Deposition
I. Kataoka
K. Ito
Jean-Jacques Delaunay
OriginalPaper 15 February 1991 Article: 359
Optical Spectroscopic Profiling of Ion Beam Sputtering
J. D. Klein
A. Yen
OriginalPaper 15 February 1991 Article: 353
Thin Film Growth Using Low-Energy Multi-Ion Beam Deposition System
S. Shimizu
N. Sasaki
H. Yamakawa
OriginalPaper 15 February 1991 Article: 347
Ion Beam Deposition of Multilayer Magnetic Films
Masakatsu Senda
OriginalPaper 15 February 1991 Article: 335
The Role of Dilution Gas in Plasma Deposition of Amorphous Hydrogenated Carbon
Hsueh Yi Lu
Mark A. Petrich
OriginalPaper 15 February 1991 Article: 327
PACVD Fluorinated Silicon Nitride Films Deposited From SiF₄/NH₃ GAS MIXTURES
A. Castro
M. Gasset
J. M. Albella
OriginalPaper 15 February 1991 Article: 321
Synthesis of Boron Nitride Film by Ion Beam Deposition
Z. Xia
G. L. Zhang
W. L. Lin
OriginalPaper 15 February 1991 Article: 315
Carbon Film Deposition on Silicon Using Low Energy Ion Beams
Qin Fuguang
Yao Zhenyu
W. M. Lau
OriginalPaper 15 February 1991 Article: 307
Oxidation Of AIN-Al₂O₃ Composite Film Prepared By Microwave Plasma CVD
Yoshihiro Someno
Makoto Sasaki
Toshio Hirai
OriginalPaper 15 February 1991 Article: 301
Modification of Properties of Ion-Beam-Sputtered Yttrium-Oxide Thin Films by Low-Energy Ion Bombardment
K. A. Klemm
L. F. Johnson
M. B. Moran
OriginalPaper 15 February 1991 Article: 295
Deposition Of Aluminium Nitride Film By Ion Beam Enhanced Reactive Magnetron Sputtering
R. F. Huang
L. S. Wen
R. J. Hong
OriginalPaper 15 February 1991 Article: 289
Preparation of Bi₄Ti₃O₁₂ Films by ECR Plasma Sputtering
Hiroshi Masumoto
Takashi Goto
Toshio Hirai
OriginalPaper 15 February 1991 Article: 283
Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films
Thomas M. Graettinger
O. Auciello
A. I. Kingon
OriginalPaper 15 February 1991 Article: 273
Ion Effects in Optical Films
U. J. Gibson
OriginalPaper 15 February 1991 Article: 263
The Influence of HBr Discharge Ambience on Poly-Si/SiO₂ Etching Selectivity
E. Ikawa
K. Tokashiki
I. Nishiyama
OriginalPaper 15 February 1991 Article: 255
The Role of Oxygen In the CF₂Cl₂ Reactive Ion Etching of Pecvd Films
Yue Kuo
OriginalPaper 15 February 1991 Article: 249
Atomic Hydrogen Passivation of High Energy Hydrogen Implants
K. Srikanth
J. Shenal
S. Ashok
OriginalPaper 15 February 1991 Article: 241
Room Temperature Nitridation and Oxidation of Si, Ge and Mbe-grown Sige Using Low Energy Ion Beams (0.1–1 Kev).
O. Vancauwenberghe
O. C. Hellman
W. J. Croft
OriginalPaper 15 February 1991 Article: 235
Evidence of Oscillating Oxide Growth Mechanism during Oxygen Plasma Oxidation of Silicon
Son Nguyen
Tue Nguyen
M. Gibson
OriginalPaper 15 February 1991 Article: 229
Heteroepitaxy of Si/Si_1−xGe_x Grown by Remote Plasma-Enhanced Chemical Vapor Deposition
T. Hsu
R. Qian
C. Magee
OriginalPaper 15 February 1991 Article: 223
Chemical Precursors for GaAs Etching with low Energy ion Beams
Richard B. Jackman
Glenn C. Tyrrell
John S. Foord
OriginalPaper 15 February 1991 Article: 215
Electrical Damage Due to Low Energy Plasma Processing of GaAs Structures
Hans P. Zappe
Gudrun Kaufel
OriginalPaper 15 February 1991 Article: 209
Persistent Photoconductivity and Thermal Recovery Kinetics of Low Energy Ar⁺ Bombarded GaAs
A. Vaseashta
L. C. Burton
OriginalPaper 15 February 1991 Article: 203
Structural and Compositional Modifications of III-V Ternary and Quaternary Compounds Induced by Ion Bombardment
A. di Bona
A. Facchini
A. Piccirillo
OriginalPaper 15 February 1991 Article: 197
CH₄:H₂:Ar rf/ECR Plasma Etching of GaAs and InP
Victor. J. Law
S. G. Ingram
H. Royal
OriginalPaper 15 February 1991 Article: 191
Energy Distribution of Negative Oxygen Ions Emitted from YBaCuO and Iron Garnet Targets by dc- and rf-Magnetron Sputtering
Jens-Peter Krumme
Ron A. A. Hack
Ivo J. M. M. Raaijmakers
OriginalPaper 15 February 1991 Article: 171
Plasma Oxidation of Y-Ba-Cu-O Precursor Filaments
J. D. Klein
J. P. Hachey
A. Yen
OriginalPaper 15 February 1991 Article: 165
Preparation of Optically Smooth Surfaces of High-T_c Superconducting Films
J. H. kim
A. Kapitulnik
W. Y. Lee
OriginalPaper 15 February 1991 Article: 159
Study of the Orientation of Y₁Ba₂Cu₃O_7−x Thin Films In-Situ Prepared by Reactive Coevaporation With RF Activated Oxygen-Ozone Plasma.
M. Nagata
H. Nojima
M. Koba
OriginalPaper 15 February 1991 Article: 153
Crystalline Orientation Control in Bi-Sr-Ca-Cu-O Thin Films
Yoshiki Ishizuka
Yoshiaki Terashima
Tadao Miura
OriginalPaper 15 February 1991 Article: 147
Thin Film Growth of High Tc Superconductors by Microwave Plasma Assisted Reactive Evaporation
Akira Tukamoto
Masahiko Hiratani
Kazumasa Takagi
OriginalPaper 15 February 1991 Article: 135
Electron Cyclotron Resonance Hydrogenation of Poly-Si Thin Film Transistors on SiO₂/Si Substrates
Gand Liu
Robert A. Ditizio
Nang Tran
OriginalPaper 15 February 1991 Article: 121
Shallow P⁺-N Junction Fabrication by Plasma Immersion Ion Implantation
C. A. Pico
X. Y. Qian
N. W. Cheung
OriginalPaper 15 February 1991 Article: 115
The Mechanisms of Reactive Ion Etching Of SiO_x (x≤2) with Electron Cyclotron Resonance and Kaufman Ion Sources
R. A. Kant
C. R. Eddy
B. D. Sartwell
OriginalPaper 15 February 1991 Article: 109
ECR Plasma Etching Technology for ULSIs
Seiji Samukawa
OriginalPaper 15 February 1991 Article: 97
The ECR-Plasma Deposition of Silicon Nitride on a Tunnel Oxide
J. C. Barbour
H. J Stein
C. A. Outten
OriginalPaper 15 February 1991 Article: 91
Cubic Boron Nitride Prepared by an ECR Plasma
Y. Osaka
M. Okamoto
Y. Utsumi
OriginalPaper 15 February 1991 Article: 81
Structural and Interfacial Characteristics of thin (<10 nm) SiO₂ Films Grown by Electron Cyclotron Resonance Plasma Oxidation on [100] Si Substrates
Tai D. Nguyen
D. A. Carl
R. Gronsky
OriginalPaper 15 February 1991 Article: 75
Properties of SiO₂ Films Fabricated by Microwave Ecr Plasma Processing with and Without Energetic Particle Bombardment During Film Deposition Part I. Fabrication Processes and Physical Properties
T. T. Chau
S. R. Mejia
K. C. Kao
OriginalPaper 15 February 1991 Article: 69
Ion/Neutral Beam Assisted Etching of Semiconductors
Glenn. C. Tyrrell
Duncan Marshall
Richard B. Jackman
OriginalPaper 15 February 1991 Article: 61
Island Evolution During Early Stages of Ion-Assisted Film Growth: Ge ON SiO₂
Shouleh Nikzad
Harry A. Atwater
Thomas J. Watson
OriginalPaper 15 February 1991 Article: 53
Experimental and Theoretical Investigations on the Interrelation of Charge Exchange Processes and Energy Loss of Particles at Metal Surfaces
A. Nämann
W. Heiland
P. M. Echenique
OriginalPaper 15 February 1991 Article: 47
Universal Energy Dependence of Sputtering Yields At Low Ion Energy
J. Muri
Ch. Steinbrüchel
OriginalPaper 15 February 1991 Article: 41
Molecular Dynamics Simulations of Ion Beam Mixing
A. M. Mazzone
OriginalPaper 15 February 1991 Article: 35
GaAs Epitaxial Growth by ECR-MBE
Naoto Kondo
Yasushi Nanishi
Masatomo Fujimoto
OriginalPaper 15 February 1991 Article: 25

Volume 223, Issue 1

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