Surface Chemistry and Mechanism of Atomic Layer Growth of GaAs Ming L. YuNicholas I. BuchanThomas F. Kuech OriginalPaper 24 October 1991 Pages: 3 - 13
The Surface Chemistry of GaAs Atomic Layer Epitaxy J. Randall CreightonBarbara A. Banse OriginalPaper 24 October 1991 Pages: 15 - 24
The Mechanisms and Kinetics of Surface Reactions of Trimethylgallium on GaAs (001) Surfaces and Its Relevance to Atomic Layer Epitaxy B. Y. MaaP. D. Dapkus OriginalPaper 24 October 1991 Pages: 25 - 40
Hreels Study of the Adsorption of Organometallics on GaAs(001) Surfaces A. NärmannR. J. PurtellM. L. Yu OriginalPaper 24 October 1991 Pages: 41 - 46
A Study of Hydrogen Atom Adsorption on Gallium Arsenide (100) by Multiple Internal Reflection Infrared Spectroscopy Paul E. GeeRobert F. Hicks OriginalPaper 24 October 1991 Pages: 47 - 52
Ideal Crystal Growth from Kink Sites and Fractional-Layer Growth on GaAs Vicinal Substrate by MOCVD Takashi FukuiHisao Saito OriginalPaper 24 October 1991 Pages: 53 - 59
Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth D. E. AspnesR. BhatM. Wassermeier OriginalPaper 24 October 1991 Pages: 63 - 73
Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors B. JohsJ. L. EdwardsJohn A. Woollam OriginalPaper 24 October 1991 Pages: 75 - 80
Ftir Studies Of Organometallic Surface Chemistry Relevant To Atomic Layer Epitaxy. Ananth V. AnnapragadaSateria SalimKlavs F. Jensen OriginalPaper 24 October 1991 Pages: 81 - 86
In-situ Measurement of GaAs Optical Constants and Surface Quality, as Functions of Temperature Huade YaoPaul G. Snyder OriginalPaper 24 October 1991 Pages: 87 - 92
Studies of Oxide Desorption From GaAs by Diffuse Electron Scatfering and Optical Reflectivity T. Van BuurenT. TiedjeJ. A. Mackenzie OriginalPaper 24 October 1991 Pages: 93 - 98
Recent Progress in Atomic Layer Epitaxy of III–V Compounds S. M. Bedair OriginalPaper 24 October 1991 Pages: 101 - 107
Laser Assisted Atomic Layer Epitaxy - A Vehicle to Optoelectronic Integration Q. ChenJ. S. OsinskiJ. J. Coleman OriginalPaper 24 October 1991 Pages: 109 - 120
Beam Assisted Atomic Layer Controlled Epitaxy and Etching of GaAs T. Meguro OriginalPaper 24 October 1991 Pages: 121 - 132
The Role of Gas Phase Decomposition in the ALE Growth of III–V Compounds K. G. ReidH. M. UrdianykS. M. Bedair OriginalPaper 24 October 1991 Pages: 133 - 138
Growth Rate Limiting and Carbon Reduction Processes for GaAs Grown by Alternate Gas Supply using H2 and N2 Carrier Gases M. ShinoharaY. YokoyamaN. Inoue OriginalPaper 24 October 1991 Pages: 139 - 144
Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy B. W. LiangH. Q. HouC. W. Tu OriginalPaper 24 October 1991 Pages: 145 - 150
Growth of (GaAs)1−x (Si2)x Metastable Alloys using Migration-Enhanced Epitaxy T. Sudersena RaoY. Horikoshi OriginalPaper 24 October 1991 Pages: 151 - 156
Multi-Wafer Atomic Layer Epitaxy Reactor for Device Quality GaAs P. C. ColterS. A. HussienS. M. Bedair OriginalPaper 24 October 1991 Pages: 157 - 162
High-Conductance GaAs Tunnel Diodes by OMVPE R. VenkatasubramanianM. L. TimmonsT. S. Colpitts OriginalPaper 24 October 1991 Pages: 163 - 168
A Possibility of ALE Growth of InN by using InCl3 Kazuhito HiguchiAkio UnnoTadashi Shiraishi OriginalPaper 24 October 1991 Pages: 169 - 173
UV Photostimulated Si Atomic-Layer Epitaxy D. LubbenR. TsuJ. E. Greene OriginalPaper 24 October 1991 Pages: 177 - 187
Growth Mechanisms During Si/Ge Deposition John E. CrowellGuangquan LuBob M. J. Ning OriginalPaper 24 October 1991 Pages: 189 - 194
Digital Process for advanced VLSI's and Surface Reaction Study H. SakaueK. AsamiY. Horiike OriginalPaper 24 October 1991 Pages: 195 - 206
Atomic Level Control in Crystal Growth Utilizing Reconstruction of the Surface Superstructure Takashi FuyukiTatsuo YoshinobuHiroyuki Matsunami OriginalPaper 24 October 1991 Pages: 207 - 211
Decomposition of Alkylsilanes on Silicon Surfaces Using Transmission Ftir Spectroscopy A. C. DillonM. B. RobinsonS. M. George OriginalPaper 24 October 1991 Pages: 213 - 218
The Etching of Silicon by Oxygen Observed by in situ Tem Frances M. RossJ. Murray Gibson OriginalPaper 24 October 1991 Pages: 219 - 224
Layer-by-Layer Oxidation of Silicon T. YasakaM. TakakuraM. Hirose OriginalPaper 24 October 1991 Pages: 225 - 230
Advances in Self-Limiting Growth of Wide Bandgap II–VI Semiconductors M. KonagaiY. TakemuraK. Takahashi OriginalPaper 24 October 1991 Pages: 233 - 242
Atomic Layer Controlled Substitutional Doping With Lithium in ZnSe Ziqiang ZhuMitsuo KawashimaTakafumi Yao OriginalPaper 24 October 1991 Pages: 243 - 249
P-Type Conversion of Nitrogen Doped ZnSe Films Grown By Mocvd Babar A. KhanNikhil TaskarKhalid Shahzad OriginalPaper 24 October 1991 Pages: 251 - 256
Growth of ZnSe and ZnSSe at Low Temperature with Aid of Atomic Hydrogen and Alternate Gas Supply Jun GotohHajime ShiraiIsamu Shimizu OriginalPaper 24 October 1991 Pages: 257 - 262
Cadmium Sulphide Thin Films Grown By Atomic Layer Epitaxy Aimo RautiainenYrjö KoskinenSven Lindfors OriginalPaper 24 October 1991 Pages: 263 - 267
Cadmium Telluride Thin Films Grown By Atomic Layer Epitaxy Arla KytökiviYrjö KoskinenJarmo Skarp OriginalPaper 24 October 1991 Pages: 269 - 273
Analysis and Calibration of the Flow Characteristics of a Pressure Controlled Vapor Source For Gas Source Doping: CdTe:l D. RajavelB. K. WagnerC. J. Summers OriginalPaper 24 October 1991 Pages: 275 - 282
Formation of CdTe and GaAs by Electrochemical Atomic Layer Epitaxy (ECALE) D. Wayne SuggsIgnacio VillegasJohn L. Stickney OriginalPaper 24 October 1991 Pages: 283 - 288
Low Temperature Epitaxial Growth of High Temperature Superconductors:Bi-Sr-Ca-Cu-O. Maki KawaiMasami MoriNobuo Ishizawa OriginalPaper 24 October 1991 Pages: 291 - 301
Plasma Enhanced OMCVD Atomic Layered Growth of Y-BA-CU Oxide Films S. J. DurayD. B. BuchholzR. P. H. Chang OriginalPaper 24 October 1991 Pages: 303 - 307
Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy Masaki KanaiTomoji KawaiShichio Kawai OriginalPaper 24 October 1991 Pages: 309 - 313
Growth of SrS Thin Films by Atomic Layer Epitaxy M. LeskelaL. NiinistöM. Tiitta OriginalPaper 24 October 1991 Pages: 315 - 320
Study Of The Growth Mechanisms of NbS2 Scales Using Marker Experiments Chuxin ZhouL. W. Hobbs OriginalPaper 24 October 1991 Pages: 321 - 326
Low-Temperature Growth of Thin Films of A12O3 with Trimethylaluminum and Hydrogen Peroxide J. F. FanK. SugiokaK. Toyoda OriginalPaper 24 October 1991 Pages: 327 - 332
Self Terminating Reaction of Dipivaloylmethanate Complexes with Hydroxyl Groups on Oxide Surface Rika SekineMaki KawaiYasuhiro Iwasawa OriginalPaper 24 October 1991 Pages: 333 - 338
Rheed Intensity Oscillation During the Epitaxial Growth of Silver and Gold Films Kazuki MaeKentaro KyunoRyoichi Yamamoto OriginalPaper 24 October 1991 Pages: 339 - 344
In Situ Rheed and HREM Study of Initial Stages of Interfacial Reactions of Uhv Deposited Titanium Thin Films on Silicon M. H. WangL. J. Chen OriginalPaper 24 October 1991 Pages: 345 - 350
Morphology of Vapor Evaporated Mo Thin Films Y. ChengM. B. Stearns OriginalPaper 24 October 1991 Pages: 351 - 356
