1. Achievement of More than 10% Efficiency for a Single-Junction 100cm² a-Si Solar Cell and Development of a New-Type Module Structure

   • Yoshihiro Hishikawa
   • Michitoshe Ohnishi
   • Yukinori Kuwano

   OriginalPaper 21 October 1990 Pages: 3 - 14

2. Study of Bandgap Profiling Control on Photovoltaic Performance in the Three Stacked Amorphous Solar Cells

   • Y. Nakata
   • H. Sannomiya
   • H Itoh

   OriginalPaper 21 October 1990 Pages: 15 - 26

3. Prospects of a-Sige:H Alloys for Solar Cell Application

   • C.M. Fortmann

   OriginalPaper 21 October 1990 Pages: 27 - 38

4. Photoelectronic Properties of the Pipi... Multilayers and their Implications for the Operation of Solar Cells

   • L. Yang
   • I. Balberg
   • S. Skibo

   OriginalPaper 21 October 1990 Pages: 39 - 44

5. Amorphous Hydrogenated Silicon P-I-N Solar Cells Grown from Hydrogen-Diluted Silane

   • Murray S Bennett
   • Jacob C Tu

   OriginalPaper 21 October 1990 Pages: 45 - 50

6. Post Initial Light Induced Degradation Stability and Performance of Amorphous Silicon Modules

   • W. B. Berry
   • M.J. Hahn
   • L. Mrig

   OriginalPaper 21 October 1990 Pages: 51 - 56

7. Improved Blue Response of Amorphous Silicon Alloy Solar Cells

   • A. Banerjee
   • S. Guha

   OriginalPaper 21 October 1990 Pages: 57 - 62

8. 1.00 Mev Proton Induced Defects in a-Si:H thin Films and Solar Cells

   • J. Scott Payson
   • Salmam Abdulaziz
   • James R. Woodyard

   OriginalPaper 21 October 1990 Pages: 63 - 68

9. Optimization of Textured Tco Substrates for a-Si Solar Cells

   • Mitsuhiko Komakine
   • Hiromichi Nishimura
   • Kei Kondo

   OriginalPaper 21 October 1990 Pages: 69 - 74

10. Fluorinated Silicon Nitride (a-Si:N,F,H) Films Using NF₃ for Amorphous Silicon Based Solar Cells

    • Freddy. H. C. Goh
    • S. M. Tan
    • A. M. Hermann

    OriginalPaper 21 October 1990 Pages: 75 - 80

11. Material Properties of P-Type A-Sic Layers Using Either Diborane or Trimethylboron as Doping Gas

    • P. Lechner
    • M. Gorn
    • N. Kniffler

    OriginalPaper 21 October 1990 Pages: 81 - 86

12. The Movement of Mobility Edges in Hydrogenated Amorphous Silicon

    • S. Lee
    • D. Heller
    • C. R Wronski

    OriginalPaper 21 October 1990 Pages: 89 - 94

13. Defect Density in Doped a-Si:H Films

    • K. Pierz
    • H. Mell
    • W. Fuhs

    OriginalPaper 21 October 1990 Pages: 95 - 100

14. Time Resolved Electroluminescence in a-Si:H p-i-n Junctions

    • Reinhard Carius

    OriginalPaper 21 October 1990 Pages: 101 - 106

15. Excitation Spectroscopy of Photoluminescence of a-Si:H

    • S. Q. Gu
    • P. C. Taylor

    OriginalPaper 21 October 1990 Pages: 107 - 112

16. Optical Phenomena at the Absorption Edge of Crystalline and Amorphous Silicon

    • George D. Cody

    OriginalPaper 21 October 1990 Pages: 113 - 120

17. Structural Implications for Optimizing A-Sige:H Alloys

    • M.B. Schubert
    • K. Eberhardt
    • G.H. Bauer

    OriginalPaper 21 October 1990 Pages: 121 - 126

18. Hydrogen Bonding in a-Si:H Prepared by Remote Hydrogen Plasma Deposition

    • S. E. Ready
    • J. B. Boyce
    • K. S. Stevens

    OriginalPaper 21 October 1990 Pages: 127 - 132

19. Hydrogen Incorporation in A-Si:H: Temperature and Doping Type Dependence

    • M.J.M. Pruppers
    • K.M.H. Maessen
    • W.F. Van Der Weg

    OriginalPaper 21 October 1990 Pages: 133 - 138

20. Deep Levels and Hydrogen Evolution in Hydrogenated Amorphous Silicon

    • Sufi Zafar
    • E. A. Schiff

    OriginalPaper 21 October 1990 Pages: 139 - 144

21. Probing the Densities of Gap States in Intrinsic a-Si:H Using Space Charge Limited Currents of Electrons and Holes

    • Robin M. Dawson
    • J. H. Smith
    • C. R. Wronski

    OriginalPaper 21 October 1990 Pages: 145 - 150

22. Hopping of Electrons in Hybrid Band Tails of a-Si_1-xGe_x:H

    • C. E. Nebel
    • H. C. Weller
    • G.H. Bauer

    OriginalPaper 21 October 1990 Pages: 151 - 156

23. Band Tails and Thermal Disorder in Doped and Undoped Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

    • Samer Aljishi
    • J. David Cohen
    • Lothar Ley

    OriginalPaper 21 October 1990 Pages: 157 - 162

24. Density of States of Amorphous Germanium Thin Films Deposited by the Pecvd of H2-Diluted Germane

    • C. Godet
    • V. Chu
    • J. P. Stoquert

    OriginalPaper 21 October 1990 Pages: 163 - 168

25. Determination of a-Si:H Film Quality Throughfst and Sclc Techniques

    • R. Martins
    • M. Vieira
    • L. Guimarães

    OriginalPaper 21 October 1990 Pages: 169 - 174

26. The Role of the Species Formed in Pecvd Systems on the Density of States of a-Si:H Films

    • R. Martins
    • L. Rodrigues
    • L. Guimarães

    OriginalPaper 21 October 1990 Pages: 175 - 180

27. Cathodoluminescence of Diamond-Like and Hydrogenated Amorphous Silicon Carbide Materials

    • F. Alvarez
    • R. R. Koropecki
    • P. V. Santos

    OriginalPaper 21 October 1990 Pages: 181 - 186

28. The Influence of Interfaces on the Gap State Distribution of Undoped a-Si:H

    • G. Schumm
    • G. H. Bauer

    OriginalPaper 21 October 1990 Pages: 189 - 194

29. Thermal Equilibration Between Band Tail and Near Surface Defect States in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

    • Samer Aljishi
    • Shu Jin
    • Sigurd Wagner

    OriginalPaper 21 October 1990 Pages: 195 - 200

30. Structure of a-Si:H/SnO₂ Interface Characterized By Xps

    • H. Koinuma
    • M. Nakano
    • S. Gonda

    OriginalPaper 21 October 1990 Pages: 201 - 206

31. Photothermal Investigation of Surfaces and Interfaces in Amorphous Silicon Films

    • G. Amato
    • L. Boarino
    • R Spagnolo

    OriginalPaper 21 October 1990 Pages: 207 - 212

32. Analysis of the Amorphous Silicon Carbide/Crystalline Silicon Interface

    • M. M. Rahman
    • T. Harjono
    • Dian Sugiarto

    OriginalPaper 21 October 1990 Pages: 213 - 218

33. Effects of Interfaces on the a-Si:H Schottky Barrier Characteristics

    • Y. M. Li
    • C. Malone
    • R. W. Collins

    OriginalPaper 21 October 1990 Pages: 219 - 224

34. Interface Roughness and X-Ray Reflectivity of Amorphous Semiconductor Multilayers

    • P. D. Persans
    • A. F. Ruppert
    • B. Abeles

    OriginalPaper 21 October 1990 Pages: 225 - 230

35. Optical Characterization of Interface, Surface and Bulk Defects in A-Si:H

    • P. D. Persans
    • D. Arnzen
    • G. E Possin

    OriginalPaper 21 October 1990 Pages: 231 - 236

36. High Quality Interfaces in a-Si:H/a-Sic:H Superlattices

    • N. Bernhard
    • M. Kirsch
    • R. Schwarz

    OriginalPaper 21 October 1990 Pages: 237 - 242

37. Strong Thickness Dependence of Photoelectronic Properties in Hydrogenated Amorphous Silicon

    • L. Yang
    • I. Balberg
    • M. Bennett

    OriginalPaper 21 October 1990 Pages: 243 - 248

38. Molecular Dynamics Simulations of the Structural, Vibrational and Electronic Properties of Amorphous Silicon

    • R. Biswas
    • I. Kwon
    • C. M. Soukoulis

    OriginalPaper 21 October 1990 Pages: 251 - 259

39. Defect Thermodynamics, Inhomogeneity, and the Density of Gap States in Hydrogenated Amorphous Silicon

    • Howard M. Branz
    • Marvin Silver

    OriginalPaper 21 October 1990 Pages: 261 - 272

40. Saturation of Metastable-Defect Density in a-Si:H

    • David Redfield
    • Richard H. Bube

    OriginalPaper 21 October 1990 Pages: 273 - 277

41. Electronic States in the Gap of a-Si from Bond Angle Variations

    • B. N. Davidson
    • G. Lucovsky

    OriginalPaper 21 October 1990 Pages: 279 - 284

42. A Comprehensive Defect Model for Amorphous Silicon

    • N. Hata
    • E. Larson
    • S. Wagner

    OriginalPaper 21 October 1990 Pages: 285 - 290

43. The First Fifty Billion Nanoseconds of Electron Photocarrier Evolution in Undoped a-Si:H

    • Homer Antoniadis
    • E.A. Schiff

    OriginalPaper 21 October 1990 Pages: 293 - 298

44. A General Analysis of Steady State Photocarrier Grating Technique for the Determination of Ambipolar Diffusion Length

    • Yuan-Min Li

    OriginalPaper 21 October 1990 Pages: 299 - 304

45. Experimental Determination for the Transition Temperature Between Ballistic and Hopping Controlled Recombination in a-Si:H

    • M. E. Zvanut
    • K. Wang
    • M. Silver

    OriginalPaper 21 October 1990 Pages: 305 - 309

46. Study of Band Tails in a-SiGe:H Alloys from Time of Flight and Thermally Stimulated Current Experiments

    • C. Longeaud
    • J. P. Kleider
    • A. Rahal

    OriginalPaper 21 October 1990 Pages: 311 - 316

47. The Influence of Tunneling Transitions on Recombination and Photoconductivity of a-Si:H

    • B. Cleve
    • P. Thomas

    OriginalPaper 21 October 1990 Pages: 317 - 322

48. Space Charge Profiles in Thick Amorphous Silicon Diodes

    • Russell E. Hollingsworth
    • Jianping Xi
    • Roman Buitrago

    OriginalPaper 21 October 1990 Pages: 323 - 328

49. Effect of the Depletion Region of a-Si:H Schottky Diodes on the Time-of-Flight Mobility-Lifetime Product

    • N. Wyrsch
    • P. Roca i Cabarrocas
    • V. Viret

    OriginalPaper 21 October 1990 Pages: 329 - 334

50. Studies on Carrier Transport Through a-Si:H/a-Si_1−xC_xH Quantum Well Structures Imbedded in the i Layer of a p-i-n Structure

    • Y. L. Jiang
    • H. L. Hwang
    • M. S. Feng

    OriginalPaper 21 October 1990 Pages: 335 - 340