Volume 18, Issue 1

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December 1982

Symposium C — Interfaces and Contacts

Issue Editors:

R. Ledeke,
K. Rose

49 articles in this issue

Rutherford Scattering-Channeling Analysis of Semiconductor Interfaces
L. C. Feldman
OriginalPaper 15 August 1982 Pages: 3 - 6
Microcharacterization of Interfaces
P. M. Petroff
OriginalPaper 15 August 1982 Pages: 7 - 7
Evidence for Island Growth on Deposition of Silver onto Si(111) 7 × 7 at Room Temperature
E. J. Van Loenen
M. Iwami
F. W. Saris
OriginalPaper 15 August 1982 Pages: 9 - 14
Structural Studies of Metal-Semiconductor Interfaces by Means of Surface Extended X-Ray Absorption Edge Fine Structure
J. Stöhr
R. Jaeger
I. Lindau
OriginalPaper 15 August 1982 Pages: 15 - 15
How Epitaxial Are Pd₂Si–Si Interfaces?
Z. Liliental
R. W. Carpenter
R. Tuenge
OriginalPaper 15 August 1982 Pages: 17 - 29
Chemical Profiling and Structural Studies of Ion-beam-Mixed Aluminum on Silicon
F. Namavar
J. I. Budnick
F. A. Otter
OriginalPaper 15 August 1982 Pages: 31 - 41
Surface Imaging of III–V Semiconductors by Reflection Electron Microscopy and Inner Potential Measurements
N. Yamamoto
J. C. H. Spence
OriginalPaper 15 August 1982 Pages: 43 - 55
Amorphous Thin Film Diffusion Barriers on GaAs and InP
W. T. Anderson Jr.
A. Christou
J. E. Davey
OriginalPaper 15 August 1982 Pages: 57 - 67
Atomic Interdiffusion in Au/Amorphous Ni-Nb/Semiconductor Systems
B. L. Doyle
P. S. Peercy
J. D. Wiley
OriginalPaper 15 August 1982 Pages: 69 - 79
ZrN Diffusion Barrier in Aluminum Metallization Schemes
L. Krusin-Elbaum
M. Wittmer
J. J. Cuomo
OriginalPaper 15 August 1982 Pages: 81 - 87
Tin as a Diffusion Barrier between CoSi₂ or PtSi and Aluminum
R. J. Schutz
OriginalPaper 15 August 1982 Pages: 89 - 99
Epitaxial Growth of BaF₂ on Semiconductor Substrates
J. M. Phillips
L. C. Feldman
M. L. McDonald
OriginalPaper 15 August 1982 Pages: 101 - 107
X-Ray Diffraction (Pole Figure) Study of the Epitaxy of Gold Thin Films on GaAs
Siu Leung
A. G. Milnes
D. D. L. Chung
OriginalPaper 15 August 1982 Pages: 109 - 131
Lattice Structure at ZnSe-GaAs Heterojunction Interfaces Prepared by Organometallic Chemical Vapor Deposition
F. A. Ponce
W. Stutius
J. G. Werthen
OriginalPaper 15 August 1982 Pages: 133 - 143
Interface Effects with Ga_0.47In_0.53As Layers on InP Substrates Prepared by Organometallic Chemical Vapor Deposition
J. S. Whiteley
S. K. Ghandhi
OriginalPaper 15 August 1982 Pages: 145 - 152
Transmission Electron Microscopy Studies of the Polycrystalline Silicon–SiO₂ Interface
J. C. Bravman
R. Sinclair
OriginalPaper 15 August 1982 Pages: 153 - 161
Enhanced Adhesion from High Energy Ion Irradiation
B. T. Werner
T. Vreeland Jr.
T. A. Tombrello
OriginalPaper 15 August 1982 Pages: 163 - 166
Ion-Beam-Induced Silicide Formation in Nickel Thin Films on Silicon
L. J. Chen
C. Y. Hou
OriginalPaper 15 August 1982 Pages: 167 - 173
Surface Morphology and Electronic Properties of ErSi₂
C. S. Wu
S. S. Lau
B. X. Liu
OriginalPaper 15 August 1982 Pages: 175 - 182
Effects of Two-Step Annealing on the Epitaxial Growth of CoSi₂ on Silicon
L. J. Chen
T. T. Chang
OriginalPaper 15 August 1982 Pages: 183 - 189
Atomic Motion of Dopant During Interfacial Silicide Formation
M. Wittmer
C.-Y. Ting
K. N. Tu
OriginalPaper 15 August 1982 Pages: 191 - 195
Formation and Crystallization of Amorphous Silicides at the Interface between Thin Metal and Amorphous Silicon Films
S. R. Herd
K. Y. Ahn
K. N. Tu
OriginalPaper 15 August 1982 Pages: 197 - 206
Lateral Diffusion of Platinum through Pt₂Si in Pt/Si Couples
L. R. Zheng
L. S. Hung
J. W. Mayer
OriginalPaper 15 August 1982 Pages: 207 - 213
The Effects of Pt_xSi Growth on the Redistribution of P-Type Dopants in Silicon
C. Y. Wei
W. Katz
G. Smith
OriginalPaper 15 August 1982 Pages: 215 - 220
Oxidation Behavior of Pd-Si Compounds
A. Cros
R. A. Pollak
K. N. Tu
OriginalPaper 15 August 1982 Pages: 221 - 225
The Effects of Interfacial SiO₂ on Pd₂Si Formation
D. M. Scott
S. S. Lau
M.-A. Nicolet
OriginalPaper 15 August 1982 Pages: 227 - 233
Behavior and Influence of Oxygen in Chromium Silicide Formation
C.-D. Lien
L. S. Wieluński
K. M. Stika
OriginalPaper 15 August 1982 Pages: 235 - 242
Influence of Nitrogen Impurities on Nickel and Platinum Silicide Formation
K. T. Ho
M.-A. Nicolet
L. Wieluński
OriginalPaper 15 August 1982 Pages: 243 - 250
Temperature Effects on Internal Stress in Molybdenum Thin Films on Single-Crystal Silicon Substrates
Jiann-Ruey Chen
Ching-Hung Ho
OriginalPaper 15 August 1982 Pages: 251 - 255
Theory of Semiconductor Heterojunctions
J. Pollmann
A. Mazur
OriginalPaper 15 August 1982 Pages: 257 - 276
Materials Research Frontiers in Semiconductor Heterojunctions
Robert S. Bauer
OriginalPaper 15 August 1982 Pages: 277 - 278
Quantum Effects at GaAs/Al_xGa_1−x Junctions
A. C. Gossard
OriginalPaper 15 August 1982 Pages: 279 - 284
Electronic Characterization of Compound Semiconductor Surfaces and Interfaces
Winfred Mönch
OriginalPaper 15 August 1982 Pages: 285 - 299
The Origin of Schottky Barriers on the Cleavage Plane of III–V Semiconductors: Review of Some Recent Theoretical Work
Alex Zunger
ReviewPaper 15 August 1982 Pages: 301 - 316
Lattice Structure and Electrical Properties of Epitaxial Aluminum on GaAs
Fernando A. Ponce
Stephen J. Eglash
OriginalPaper 15 August 1982 Pages: 317 - 317
Schottky Contacts on Annealed GaAs
R. E. Miles
P. J. Tasker
M. J. Howes
OriginalPaper 15 August 1982 Pages: 319 - 326
Energy-Dependent Photoemission in the Study of Silicon-d Metal Interfaces
L. Braicovich
OriginalPaper 15 August 1982 Pages: 327 - 335
Soft X-Ray Photoemission Measurement of Schottky Barrier Formation at the Pd-Si Interface
R. Purtell
P. S. Ho
G. Holinger
OriginalPaper 15 August 1982 Pages: 337 - 337
Characterization of Ion-Beam-Sputtered Molybdenum Films on N-Type Silicon
F. D. Auret
O. Paz
N. A. Bojarczuk
OriginalPaper 15 August 1982 Pages: 339 - 349
Dynamics of Metal-SiO_x and SiO_x–Si Interfaces and the Associated Instabilities in Practical Metal/Insulator/Semiconductor Structures
G. Rajeswaran
W. A. Anderson
M. Thayer
OriginalPaper 15 August 1982 Pages: 351 - 359
Contact Resistance and Methods for Its Determination
Simon S. Cohen
OriginalPaper 15 August 1982 Pages: 361 - 379
Material Compatibility and Degradation Problems in Microelectronics
K. N. Tu
OriginalPaper 15 August 1982 Pages: 381 - 381
Low Ohmicity Contacts to Mono- and Polycrystalline Silicon
H. B. Harrison
J. S. Williams
G. K. Reeves
OriginalPaper 15 August 1982 Pages: 383 - 383
Ion Implantation Technique for Simultaneous Formation of a Shallow Silicon p-n Junction and a Shallow Silicide-Silicon Ohmic Contact
B.-Y. Tsaur
C. H. Anderson Jr.
OriginalPaper 15 August 1982 Pages: 385 - 391
Ohmic Contacts to GaAs
Norman Braslau
OriginalPaper 15 August 1982 Pages: 393 - 399
GaAs Microcircuit Contact and Interconnect Technology
Bryant M. Welch
OriginalPaper 15 August 1982 Pages: 401 - 401
Contact Resistivity and Dopant Activation in Pulsed-laser-Annealed Au-Ge/GaAs Contacts
O. Aina
W. Katz
K. Rose
OriginalPaper 15 August 1982 Pages: 403 - 409
Metallurgical Reactions in Au/(In–Ge) Ohmic Contacts to GaAs
C. R. M. Grovenor
OriginalPaper 15 August 1982 Pages: 411 - 420
Temperature-Dependent X-Ray Study of Alloyed Gold Metallization Contacts on In_1−xGa_xAs_yP_1–y/Inp Layers
J. Vandenberg
H. Temkin
M. A. DiGuiseppe
OriginalPaper 15 August 1982 Pages: 421 - 424

Volume 18, Issue 1

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