Volume 1736, Issue 1

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December 2014

Wide-Bandgap Materials for Solid-State Lighting and Power Electronics

Issue Editors:

R. Kaplar,
G. Meneghesso,
B. Ozpineci,
T. Takeuchi

17 articles in this issue

Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment
W. Pletschen
St. Linkohr
O. Ambacher
OriginalPaper 01 April 2015 Pages: 1 - 6
Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes
Arjun Shetty
Basanta Roul
S B Krupanidhi
OriginalPaper 01 April 2015 Pages: 7 - 13
Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers
Jie Su
Eric A. Armour
George D. Papasouliotis
OriginalPaper 01 April 2015 Pages: 14 - 19
Wrap around field plate technique for GaN Schottky barrier diodes
Sowmya Kolli
Robert Hickman
Bruce W Alphenaar
OriginalPaper 01 April 2015 Pages: 20 - 24
Spatially resolved optical emission of cubic GaN/AlN multi-quantum well structures
D.J. As
R. Kemper
J. Christen
OriginalPaper 01 April 2015 Pages: 25 - 30
Growth and Characterization of a-plane In_0.2Ga_0.8N/ GaN hetrostructures on r-Sapphire
Shruti Mukundan
Lokesh Mohan
S.B. Krupanidhi
OriginalPaper 01 April 2015 Pages: 31 - 37
Optimization of Carrier Distributions in Periodic Gain Structures toward Blue VCSELs
Kenjo Matsui
Kosuke Horikawa
Isamu Akasaki
OriginalPaper 01 April 2015 Pages: 38 - 43
GaN HEMT Drain-Lag Performance Dependence on GaN Channel Quality
Yoichi Kamada
Naoya Okamoto
Kazukiyo Joshin
OriginalPaper 01 April 2015 Pages: 44 - 48
MOCVD of GaN-based HEMT structures on 8 inch silicon substrates
Oleg Laboutin
Chien-Fong Lo
Daily Hill
OriginalPaper 01 April 2015 Pages: 49 - 58
Evaluation of electron overflow in nitride-based LEDs influenced by polarization charges at electron blocking layers
K. Hayashi
T. Yasuda
I. Akasaki
OriginalPaper 01 April 2015 Pages: 59 - 64
GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications
Zheng Sun
Shigeyoshi Usami
Hiroshi Amano
OriginalPaper 01 April 2015 Pages: 65 - 69
Fabrication and Lasing Properties of Single-Crystalline Semiconductor Microspheres with Anisotropic Crystal Structures
Shinya Okamoto
Satoshi Ichikawa
Masaaki Ashida
OriginalPaper 01 April 2015 Pages: 70 - 75
Impact of Nitridation on Structural and Optical Properties of Epitaxial GaN Films Grown on M-Plane Sapphire by PAMBE
Shruti Mukundan
Lokesh Mohan
S.B. Krupanidhi
OriginalPaper 01 April 2015 Pages: 76 - 82
Low Resistive and Low Absorptive Nitride-Based Tunnel junctions
Daichi Minamikawa
Daiki Takasuka
Isamu Akasaki
OriginalPaper 01 April 2015 Pages: 83 - 88
HVPE GaN with Low Concentration of Point Defects for Power Electronics
M. A. Reshchikov
J.D. McNamara
Yu. Makarov
OriginalPaper 01 April 2015 Pages: 89 - 94
GaN growth on silicon based substrates using pulsed electron beam deposition (PED) process
Nazmul Arefin
Matthew H. Kane
Patrick J. McCann
OriginalPaper 01 April 2015 Pages: 95 - 100
Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs
Y. Kozuka
K. Ikeyama
I. Akasaki
OriginalPaper 01 April 2015 Pages: 101 - 106

Volume 1736, Issue 1

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