Volume 1693, Issue 1

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December 2014

Symposium DD — Silicon Carbide?Materials, Processing and Devices

Issue Editors:

F. Zhao,
F. Iacopi,
E. Sanchez,
C.-M. Zetterling

28 articles in this issue

4H-SiC P⁺N UV Photodiodes: Influence of Temperature and Irradiation
B. Bérenguier
L. Ottaviani
A. Lyoussi
OriginalPaper 01 December 2014 Pages: 1 - 6
Defect Reduction Paths in SiC Epitaxy
J. Zhang
D.M. Hansen
M. Dudley
OriginalPaper 01 December 2014 Pages: 7 - 18
Developments of SiC DioMOS (Diode Integrated SiC MOSFET)
Makoto Kitabatake
OriginalPaper 01 December 2014 Pages: 19 - 24
Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC
Daniel J. Lichtenwalner
Lin Cheng
Charles Scozzie
OriginalPaper 01 December 2014 Pages: 25 - 30
Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation
Siddarth Sundaresan
Brian Grummel
Ranbir Singh
OriginalPaper 01 December 2014 Pages: 31 - 36
Nano Carbon 1D and 2D Nanomechanical Resonators
Jaesung Lee
Philip X.-L. Feng
Anupama B. Kaul
OriginalPaper 01 December 2014 Pages: 37 - 42
Structural Characterization of Lateral-grown 6H-SiC a/m-plane Seed Crystals by Hot Wall CVD Epitaxy
Ouloide Yannick
Balaji Raghothamachar
David J. Spry
OriginalPaper 01 December 2014 Pages: 43 - 48
Direct Observation of Stacking Fault Nucleation from Deflected Threading Dislocations with Burgers Vector c+a in PVT Grown 4H-SiC
Fangzhen Wu
Huanhuan Wang
Mark J. Loboda
OriginalPaper 01 December 2014 Pages: 49 - 54
High quality and high speed cutting of 4H-SiC JFET wafers including PCM structures by using Thermal Laser Separation
Dirk Lewke
Matthias Koitzsch
Heiner Ryssel
OriginalPaper 01 December 2014 Pages: 55 - 60
3C-SiC on Si: A Versatile Material for Electronic, Biomedical and Clean Energy Applications
C.L Frewin
M. Reyes
S. E. Saddow
OriginalPaper 01 December 2014 Pages: 61 - 74
Impact of growth parameters on the formation of carbon nanostructures through thermal deposition of silicon carbide
Munson Anderson
Michael Pochet
John Boeckl
OriginalPaper 01 December 2014 Pages: 75 - 80
Home VLC using pinpin a-SiC:H multilayer devices
P. Louro
V. Silva
M. Vieira
OriginalPaper 01 December 2014 Pages: 81 - 86
Ohmic and rectifying contacts to n-SiC formed by energetic deposition of carbon
Masturina Kracica
Jim G. Partridge
Geoff K. Reeves
OriginalPaper 01 December 2014 Pages: 87 - 92
A novel 3C-SiC on Si power Schottky diode design and modelling
Fan Li
Yogesh K. Sharma
Philip A. Mawby
OriginalPaper 01 December 2014 Pages: 93 - 98
Novel SiC detector based on optical signal instead of electrical signal
Geunsik Lim
Tariq Manzur
Aravinda Kar
OriginalPaper 01 December 2014 Pages: 99 - 106
Correlation of Stress in Silicon Carbide Crystal and Frequency Shift in Micro-Raman Spectroscopy
N. Sugiyama
M. Yamada
S. Onda
OriginalPaper 01 December 2014 Pages: 107 - 112
Characteristics and aging of SiC MOSFETs operated at very high temperatures
Dean P. Hamilton
Michael R. Jennings
Philip A. Mawby
OriginalPaper 01 December 2014 Pages: 113 - 118
CMOS Circuits on Silicon Carbide for High Temperature Operation
David T. Clark
Robin F. Thompson
Alton B. Horsfall
OriginalPaper 01 December 2014 Pages: 119 - 130
P⁺ implanted 6H-SiC n⁺-i-p diodes: evidence for a post-implantation-annealing dependent defect activation
R. Nipoti
M. Puzzanghera
F. Moscatelli
OriginalPaper 01 December 2014 Pages: 131 - 136
Single Crystalline 4H-SiC MEMS Devices with N-P-N Epitaxial Structure
Feng Zhao
Allen Lim
Chih-Fang Huang
OriginalPaper 01 December 2014 Pages: 137 - 142
Patch antennas utilizing semi-insulating SiC for monolithic integration of the antenna subsystem on a SiC chip
Tutku Karacolak
Rooban V. K. G. Thirumalai
Yaroslav Koshka
OriginalPaper 01 December 2014 Pages: 143 - 147
Photosensitive Capacitance Effect In High-purity Semi-insulating 4H-SiC
Joseph Register
Stephen E. Saddow
Kevin Boulais
OriginalPaper 01 December 2014 Pages: 148 - 158
Revealing the electronic band structure of quasi-free trilayer graphene on SiC(0001)
C. Coletti
S. Forti
U. Starke
OriginalPaper 01 December 2014 Pages: 159 - 167
New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection enhancement
M. Toure
B. Berenguier
D. Kobor
OriginalPaper 01 December 2014 Pages: 168 - 173
Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO₂ interface
Aleksey I. Mikhaylov
Alexey V. Afanasyev
Adolf Schöner
OriginalPaper 01 December 2014 Pages: 174 - 179
Graphene Grown on Ion-Implanted 4H-SiC and an Effect of Pre-Plasma Treatment
Toru Sugimachi
Yusuke Shiina
Tohru Nakamura
OriginalPaper 01 December 2014 Pages: 180 - 184
Thermal neutron detection enhancement by ¹⁰B implantation in silicon carbide sensor
Vanessa Vervisch
Fatima Issa
Abdallah Lyoussi
OriginalPaper 01 December 2014 Pages: 185 - 192
Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation
Craig A. Fisher
Michael R. Jennings
Philip A. Mawby
OriginalPaper 01 December 2014 Pages: 193 - 198

Volume 1693, Issue 1

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