Volume 1691, Issue 1 | MRS Online Proceedings Library

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Volume 1691, Issue 1

December 2014

Symposium BB — Materials for End-of-Roadmap Devices in Logic, Power and Memory

Issue Editor:

E.M. Vogel

11 articles in this issue

Dielectric Morphology and RRAM Resistive Switching Characteristics
G. Bersuker
B. Butcher
P.D. Kirsch
OriginalPaper 01 December 2014 Pages: 1 - 12
The Effect of Multiple Interfaces on the Electrical Properties of MgO/Al₂O₃ Multilayer Gate Stacks on Si Grown by MBE
Chen-Yi Su
Mariela Menghini
Jean-Pierre Locquet
OriginalPaper 01 December 2014 Pages: 13 - 17
A Frequency Agile Miniaturized Antenna Utilizing Ferroelectric Barium-Strontium-Titanate Capacitors
S. Alzahrani
T.S Kalkur
H. Song
OriginalPaper 01 December 2014 Pages: 18 - 24
Nuclear Magnetic Resonance as a Probe of the Topological Insulator Bi₂Se₃
David M. Nisson
Adam P. Dioguardi
Nicholas J. Curro
OriginalPaper 01 December 2014 Pages: 25 - 30
Electroforming of Fe:STO samples for resistive switching made visible by electrocoloration observed by high resolution optical microscopy
Viktor Havel
Astrid Marchewka
Rainer Waser
OriginalPaper 01 December 2014 Pages: 31 - 36
Nonvolatile memories based on AlO_x embedded ZrHfO high-k gate dielectric
Shumao Zhang
Yue Kuo
Chi-Chou Lin
OriginalPaper 01 December 2014 Pages: 37 - 42
Resistive Switching Behavior and Electrical Properties of TiO₂:Ho₂O₃ and HoTiO_x Based MIM Capacitors
H. García
H. Castán
M. Leskelä
OriginalPaper 01 December 2014 Pages: 43 - 48
Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In_0.53 Ga_0.47 As/Al₂O₃/HfO₂ Stack
Alexandre Savtchouk
John D’Amico
Donghyi Koh
OriginalPaper 01 December 2014 Pages: 49 - 56
Ultra-Low-Energy Straintronics Using Multiferroic Composites
Kuntal Roy
OriginalPaper 01 December 2014 Pages: 57 - 62
A Tunable Bandstop Filter Using Thin Film Barium-Strontium-Titanate Varactors
S. Alzahrani
T.S Kalkur
OriginalPaper 01 December 2014 Pages: 63 - 68
The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)
Ryosuke Ogata
Masataka Yoshihara
Kentaro Kinoshita
OriginalPaper 01 December 2014 Pages: 69 - 74