Volume 163, Issue 1

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December 1989

Symposium G — Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures

169 articles in this issue

High-Resolution Spectroscopy of Point Defects in Silicon
H. G. Grimmeiss
M. Kleverman
J. Olajos
OriginalPaper 25 February 2011 Pages: 3 - 14
Infrared Absorption Study of Zinc-Doped Silicon.
E. Merk
J. Heyman
E. E. Haller
OriginalPaper 25 February 2011 Pages: 15 - 20
Infrared Studies of the Double Acceptor Zinc in Silicon
A. Dörnen
R. Kienle
N. A. Stolwijk
OriginalPaper 25 February 2011 Pages: 21 - 26
Pressure Dependence of a Deep Excitonic Level in Silicon
G. A. Northrop
D. J. Wolford
OriginalPaper 25 February 2011 Pages: 27 - 32
ODMR of Shallow Donors in Zn-Doped Lec-Grown InP
J. M. Trombetta
T. A. Kennedy
OriginalPaper 25 February 2011 Pages: 33 - 38
Complex Defects in Semiconductors
B. Monemar
OriginalPaper 25 February 2011 Pages: 39 - 50
The Electronic Structure of Interstitial Iron in Silicon
A Thilderkvist
G Grossmann
H G Grimmeiss
OriginalPaper 25 February 2011 Pages: 51 - 56
Dislocation Related D-Band Luminescence; the Effects of Transition Metal Contamination
Victor Higgs
E. C. Lightowlers
P. Kightley
OriginalPaper 25 February 2011 Pages: 57 - 62
Photoluminescence Excitation Spectroscopy of MOCVD-Grown: GaAs:V
Y. J. Kao
N. M. Haegel
W. S. Hobson
OriginalPaper 25 February 2011 Pages: 63 - 67
Radiative and Non-Radiative Recombinations at Er Centers in GaAlAs
Taha Benyattou
Djelloul Seghier
Marie-Noelle Charasse
OriginalPaper 25 February 2011 Pages: 69 - 74
Characterization of Deep-Level Defects in Semi-Insulating GaAs and InP by Photoinduced Transient Spectroscopy (PITS)
Pawel Kaminski
OriginalPaper 25 February 2011 Pages: 75 - 80
Electronic Structure of Li-Impurities in ZnSe.
T. Oguchi
T. Sasaki
H. Katayama-Yoshida
OriginalPaper 25 February 2011 Pages: 81 - 84
Modified Optically Detected Magnetic Resonance Technique for Studies of Defects in Si and GaAs
W. M. Chen
B. Monemar
OriginalPaper 25 February 2011 Pages: 85 - 88
Nitrogen and Phosphorous Impurities in Diamond
Koblar Jackson
Mark R. Pederson
Joseph G. Harrison
OriginalPaper 25 February 2011 Pages: 89 - 92
Radiative Recombination and Carrier Lifetimes in Surface-Free GaAs Homostructures
L. M. Smith
D. J. Wolford
S. K. Ghandhi
OriginalPaper 25 February 2011 Pages: 95 - 107
Evidence for Strong Trapping by Ionized Donors of Free Excitions in Excited States for High Purity GaAs and AlGaAs
S. Zemon
G. Lambert
OriginalPaper 25 February 2011 Pages: 109 - 114
Formation of Three Red-Shift Emissions in Heavily Germanium-Doped P-Type GaAs Grown By MBE
Y. Makita
A. Yamada
N. Kutsuwada
OriginalPaper 25 February 2011 Pages: 115 - 120
Electrical Properties of Heavily Be-doped GaAs grown by Molecular Beam Epitaxy
H. Shibata
Y. Makita
T. Matsumori
OriginalPaper 25 February 2011 Pages: 121 - 126
Photoluminescence Study of GaAs Diffused with Li
H. P. Gislason
E. Ö. Sveinbjörnsson
M. Linnarsson
OriginalPaper 25 February 2011 Pages: 127 - 132
Laser-Thermal Impurity Pumping of Shallow Donors in Ultrapure Germanium
T. Theiler
F. Keilmann
E. E. Haller
OriginalPaper 25 February 2011 Pages: 133 - 138
Electrical and Photoluminescence Properties of Mg⁺ and C⁺ Implanted Acceptors in InP.
A. C. Beye
A. Yamada
Y. Makita
OriginalPaper 25 February 2011 Pages: 139 - 142
Optically Detected Magnetic Resonance of Sulfur Doped Gallium Phosphide
K. L. Brower
OriginalPaper 25 February 2011 Pages: 145 - 149
The Role of Oxygen in p-Type InP
J. Michel
J. Jeong
L. C. Kimerling
OriginalPaper 25 February 2011 Pages: 151 - 156
Mid-Infrared Spectral Photoresponse of Semi-Insulating GaAs
G. J. Brown
W. C. Mitchel
OriginalPaper 25 February 2011 Pages: 157 - 162
Correlation of the 0.8 eV Emission Band with the EL6 Center in GaAs
S. Alaya
M. A. Zaidi
J. C. Bourgoin
OriginalPaper 25 February 2011 Pages: 163 - 167
The Electronic Structure of the “0.15 eV” Cu Acceptor Level in GaAs
E. Janzén
M. Linnarsson
M. Kleverman
OriginalPaper 25 February 2011 Pages: 169 - 174
Optical Absorption of Deep Defects in Neutron Irradiated Semi-InsulatingGaAs.
M. O. Manasreh
P. J. Pearah
OriginalPaper 25 February 2011 Pages: 175 - 178
New, Germanium - Related Defect in Neutron - Irradiated Gallium Phosphide
J. Barczynska
E. Goldys
OriginalPaper 25 February 2011 Pages: 179 - 184
Deep Level Luminescence in InP: Phonon Feature Analysis
S. Banerjee
A. K. Srivastava
B. M. Arora
OriginalPaper 25 February 2011 Pages: 185 - 188
The Nature of Native Defects in LEC grown Semi-Insulating GaAs by Thermally Stimulated Current Spectroscopy
Zhaoqiang Fang
Lei Shan
A. G. Milnes
OriginalPaper 25 February 2011 Pages: 189 - 192
Anomalous Luminescence Properties of GaAs grown by Molecular Beam Epitaxy
I. Szafranek
M. A. Plano
G. E. Stillman
OriginalPaper 25 February 2011 Pages: 193 - 196
Comparative Optical Studies of Cu, Mn, and C Impurities in Bulk Lec grown GaAs by Electron Beam Electroreflectance (EBER) and Photoluminescence (PL).
M. H. Herman
P. J. Pearah
I. D. Ward
OriginalPaper 25 February 2011 Pages: 197 - 202
Ge Related Deep Level Luminescence in InGaAs Lattice Matched to InP
S. S. Chandvankar
A. K. Srivastava
D. K. Sharma
OriginalPaper 25 February 2011 Pages: 203 - 206
The Deep 0.11eV Manganese Acceptor Level in GaAs
M. Kleverman
E. Janzén
B. Monemar
OriginalPaper 25 February 2011 Pages: 207 - 210
Identification of Surface-Related Electron Traps in Undoped GaAs by Deep Level Transient Spectroscopy
Ki-Chul Shin
In-Shik Park
OriginalPaper 25 February 2011 Pages: 211 - 214
Luminescence Due to Mn Doped GaP
Teresa Monteiro
Estela Pereira
OriginalPaper 25 February 2011 Pages: 215 - 218
High Performance Photoluminescence Spectroscopy using Fourier Transform Interferometry
M. L. W. Thewalt
M. K. Nissen
K. R. Lundgren
OriginalPaper 25 February 2011 Pages: 221 - 231
Generation and Dissociation of Iron-Boron Pairs in Silicon
Masashi Suezawa
Koji Sumino
OriginalPaper 25 February 2011 Pages: 233 - 238
Photoconductivity Study of CrB and Cr_I in Silicon
A. Schlette
R. Klenle
K. Thonke
OriginalPaper 25 February 2011 Pages: 239 - 244
Formation of In-Cu Pairs in Silicon During Chemomechanical Polishing
Th. Wichert
R. Keller
D. Steiner
OriginalPaper 25 February 2011 Pages: 245 - 256
Strain Induced Intrinsic Quantum wells as the Origin of Broad Band Photoluminescence in Silicon Containing Extended Defects
H. Weman
B. Monemar
OriginalPaper 25 February 2011 Pages: 257 - 260
Optical Properties of Novel Vibronic Bands in Electron-Irradiated Tin Doped Silicon
J. H. Svensson
B. Monemar
B. G. Svensson
OriginalPaper 25 February 2011 Pages: 261 - 264
A New Metastable Defect in Silicon, Optical Properties and an Investigation of the Mechanism Causing the Configurational Change
J. H. Svensson
B. Monemar
OriginalPaper 25 February 2011 Pages: 265 - 268
Novel Luminescence Band in Silicon Implanted with Phosphorus and Boron
A. K. Srivastava
D. K. Sharma
V. Premchandran
OriginalPaper 25 February 2011 Pages: 269 - 272
Uniaxial Stress and Zeeman Measurements on the 943 meV Luminescence Band in Silicon
M. C. Carmo
K. G. Mcguigan
E. C. Lightowlers
OriginalPaper 25 February 2011 Pages: 273 - 276
Identification of Radiation-Induced Defects in Si:Al
Ya. I. Latushko
V. V. Petrov
OriginalPaper 25 February 2011 Pages: 277 - 282
Defect-Formation Dependence on Group V-Dopant Atoms in Electron-Irradiated Silicon
O. O. Awadelkarim
A. Henry
J. L. Lindström
OriginalPaper 25 February 2011 Pages: 283 - 286
Electronic Structure of Vacancy-Phosphorus Impurity Complexes in Silicon
Hongqi Xu
U. Lindefelt
OriginalPaper 25 February 2011 Pages: 287 - 290
New DLTS Peaks Associated with New Donors and Rodlike Defects in Czochralski Silicon
Yoichi Kamiura
Fumio Hashimoto
Minoru Yoneta
OriginalPaper 25 February 2011 Pages: 291 - 294
Multiconfigurational Carbon-Group V Pair Defects in Silicon
E. Gürer
B. W. Benson
OriginalPaper 25 February 2011 Pages: 295 - 298

Volume 163, Issue 1

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