Volume 1561, Issue 1

December 2013

Symposium CC — Gate Stack Technology for End-of-Roadmap Devices in Logic, Power and Memory

Issue Editor:

7 articles in this issue

Kinetics of Frenkel Defect Formation in TiO₂ from First Principles
Sergey V. Barabash
Charlene Chen
Yoshio Nishi
OriginalPaper 21 August 2013 Article: 7
Improved Nitridation of GeO₂ Interfacial layer for Ge Gate Stack Technology
P. Bhatt
K. Chaudhuri
S. Lodha
OriginalPaper 17 July 2013 Article: 6
Analysis of Leakage Currents through PLD Grown Ultrathin a-LaGdO₃ Based High-k Metal Gate Devices
Shojan P. Pavunny
Pankaj Misra
Ram S. Katiyar
OriginalPaper 28 June 2013 Article: 5
High-Performance MIM Capacitors based on TiO₂/ZrO₂/TiO₂ and AlO-doped TiO₂/ZrO₂/TiO₂ Dielectric Stacks for DRAM Applications
Revathy Padmanabhan
Navakanta Bhat
Sanjeev Kaushal
OriginalPaper 27 June 2013 Article: 4
Pulsed DC Magnetron Sputtered Rutile TiO₂ films for next generation DRAM capacitors
M. A. Jithin
Lakshmi Ganapathi Kolla
Sanjeev Kaushal
OriginalPaper 26 June 2013 Article: 3
High Integrity SiO₂/Al₂O₃ Gate Stack for Normally-off GaN MOSFET
Hiroshi Kambayashi
Takehiko Nomura
Tadahiro Ohmi
OriginalPaper 27 June 2013 Article: 2
Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs
Cheng-Ying Huang
Jeremy J. M. Law
Arthur C. Gossard
OriginalPaper 28 June 2013 Article: 1

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