Volume 145, Issue 1

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December 1989

Symposium A — III-V Heterostructures for Electronic/Photonic Devices

Issue Editors:

A.C. Gossard,
V.D. Mattera,
C.W. Tu

70 articles in this issue

Modulation Doped GaAs with Electron Mobilities Exceeding 10⁷cm²/V sec
Loren Pfeiffer
K. W. West
K. W. Baldwin
Article 01 December 1989 Pages: 3 - 12
Determination of as Sticking Coefficients Using Reflection high Energy Electron Diffraction Intensity Oscillations on GaAs
Robert Chow
Rouel Fernandez
Article 01 December 1989 Pages: 13 - 19
Quantum-Confined Optical Interband Transitions in 5-Doped Doping Superlattices
E. F. Schubert
T. D. Harris
J. E. Cunningham
Article 01 December 1989 Pages: 21 - 25
Erratum to: Molecular Beam Epitaxical Growth of Al_xGa_1-xAs on Non - Planar Patterned GaAs (100)
S. Guha
A. Madhukar
Z. Xie
Erratum 28 February 2011 Pages: 26 - 26
Molecular Beam Epitaxical Growth of Al_xGa_1-xAs on Non - Planar Patterned GaAs (100)
S. Guha
A. Madhukar
Z. Xie
OriginalPaper 28 February 2011 Pages: 27 - 32
Narrow Si doping distributions in 6-doped GaAs, Al_0.3Ga_0.7As and Quantum Wells grown by Gas Source Molecular Beam Epitaxy
J. E. Cunningham
T. H. Chin
C. Fonstad
Article 01 December 1989 Pages: 33 - 38
High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates
H. Temkin
L. R. Harriott
M. B. Panish
Article 01 December 1989 Pages: 39 - 46
Rheed Measurement and Chemical Kinetics of Chemical Beam Epitaxial growth of GaAs
T. H. Chiu
Article 01 December 1989 Pages: 47 - 56
Effect of Atomic Hydrogen on Impurity Reduction in Mombe-Grown GaAs
Y. C. Kao
T. S. Kim
D. L. Farrington
Article 01 December 1989 Pages: 57 - 61
Growth of AlGaAs/GaAs Modfet Structures by Gsmbe Using Triethylalkyls and Arsine
Yu-Min Houng
Yi-Ching Pao
Paul Mcleodl
Article 01 December 1989 Pages: 63 - 71
Trichloride-Hydride Vpe: A Hybrid Regrowth Process for III–V Epitaxial Heterostructures
M. A. Digiuseppe
V. D. Mattera Jr.
L. J. Peticolas
Article 01 December 1989 Pages: 75 - 83
InGaAs/InP Multiquantum well Structures Grown by Trichloride Vapor Phase Epitaxy
K. W. Wang
V. D. Mattera
G. Livescusecca
Article 01 December 1989 Pages: 85 - 90
InGaAs Compositional Control in a Halide-Based Vapor Levitation Epitaxy System
Camellia M. L. Yee
Pamela S. Davisson
Article 01 December 1989 Pages: 91 - 96
Kinetic Limits to Growth on GaAs by OMCVD
D. E. Aspnes
R. Bhat
A. A. Studna
Article 01 December 1989 Pages: 99 - 106
Models and Mechanisms of III-V Compound Semiconductor Growth by Movpe
Klavs F. Jensen
Triantafillos J. Mountziaris
Dimitrios I. Fotiadis
Article 01 December 1989 Pages: 107 - 118
A Mathematical Model of the Gas-Phase and Surface Chemistry in GaAs Mocvd
Michael E. Coltrin
Robert J. Kee
Article 01 December 1989 Pages: 119 - 124
Electrical and Optical Properties of Vanadium in OMVPE-Grown GaAs
W. S. Hobson
S. J. Pearton
H. Kanber
Article 01 December 1989 Pages: 125 - 130
Element III Segregation During Mocvd Growth on Structured Substrates
Eric P. Menu
Kenneth M. Dzurko
P. Daniel Dapkus
Article 01 December 1989 Pages: 131 - 136
Production of GaAs and InP Based Heterostructures
H. Jorgensen
R. K. Schreiner
M. Deschler
Article 01 December 1989 Pages: 137 - 144
Highly Strained InAs_xP_1-x/InP Quantum wells Prepared by Flow Modulation Epitaxy
R. P. Schneider Jr.
B. W. Wessels
Article 01 December 1989 Pages: 145 - 150
Growth of InGaAsP films in a Multi-Wafer high Speed Rotating Disk Reactor by Mocvd
Paul Reinert
Mark Mckee
Richard A. Stall
Article 01 December 1989 Pages: 151 - 156
Atomic Layer Epitaxy: modeling Of Growth Parameters for Device Quality GaAs
E. Colas
R. Bhat
G. C. Nihous
Article 01 December 1989 Pages: 157 - 162
Atomic Layer Epitaxy of GaAs and InAs
Weon G. Jeong
E. P. Menu
P. D. Dapkus
Article 01 December 1989 Pages: 163 - 168
Non-Hydride Group V Sources for Omvpe
G. B. Stringfellow
Article 01 December 1989 Pages: 171 - 179
Gas Phase and Surface Reactions of Organometallic Arsenic Sources
T. R. Omstead
S. Brandon
G. T. Muhr
Article 01 December 1989 Pages: 181 - 186
Purity and Uv Absorption Cross Sections of TMA, TMG, and TMAs
Hideo Okabe
M. K. Emadi-Babaki
Article 01 December 1989 Pages: 187 - 192
The Role of Arsine in Reducing Carbon in Triethylarsenic Grown GaAs Films
D. M. Speckman
J. P. Wendt
Article 01 December 1989 Pages: 193 - 198
Reduction of Toxic Gas Emissions During Gas Cabinet Manifold Vent Purge Cycles Using a Novel Scrubbing Material
Bruce A. Luxon
V. R Vaughan
G. M. Tom
Article 01 December 1989 Pages: 199 - 204
New Group III Precursors for the Movpe of GaAs and InP Based Material
M. Hostalhe
L. Pohl
W. Wassermann
Article 01 December 1989 Pages: 205 - 210
GaAs Solar Cell Using an Alternate Arsenic Source
V. S. Sundaram
J. E. Avery
L. M. Fraas
Article 01 December 1989 Pages: 211 - 215
Metalorganic Chemical Vapor Deposition of High Quality GaAs and AlGaAs Using Tertiarybutylarsine
G. Haacke
S. P. Watkins
J. Quick
Article 01 December 1989 Pages: 217 - 222
The Use of Group V Alkyls as Replacements for Arsine and Phosphine in Hot-Walled VPe Reactors
D. Noel Buckley
Article 01 December 1989 Pages: 223 - 228
Automation Features Used with the Halide-Cvd Technique at the AT&T-Microelectronics Production Plant in Reading, Pennsylvania
Bruce J. Rhoades
Steven J. Travis
David G. Sands
Article 01 December 1989 Pages: 231 - 237
Large-Area Deposition of GaAs by MOCVD
James T. Daly
Carson B. Roberts
Article 01 December 1989 Pages: 239 - 244
Low Pressure Growth of GaAs/AlGaAs Layers on 2N and 3N Substrates in a Multiwafer Reactor
M. Heyen
M. Heuken
K. Heime
Article 01 December 1989 Pages: 245 - 251
Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine
L. M. Fraas
G. R. Girard
Rick Stall
Article 01 December 1989 Pages: 253 - 258
The Growth, Characterization and Electronic Device Applications of GaAs/Si
A. S. Jordan
S. J. Pearton
W. S. Hobson
Article 01 December 1989 Pages: 261 - 278
Heteroepitaxy of III-V Compounds on Si Substrates for Solar Cells and Led
Masafumi Yamaguchi
Susumu Kondo
Article 01 December 1989 Pages: 279 - 286
High 2Deg Mobility and Fabrication of High Performance AiGaAs/GaAs Selectively Doped Heterostructure Transistors and Ring Oscillators on Si Substrates
Naresh Chand
F. Ren
Y. K. Chen
Article 01 December 1989 Pages: 287 - 296
Growth and Characterization of Heteroepitaxial GaAs on Semiconductor-on-Insulator and Insulating Substrates
T. P. Humphreys
K. Das
R. J. Markunas
Article 01 December 1989 Pages: 297 - 303
Growth and Characterization of GaAs on Si by Mbe
A. Z. Li
J. X. Wang
S. B. Wang
Article 01 December 1989 Pages: 305 - 309
Heteroep1Taxial Nucleation and Structural Properties of MBE GaAs on Recessed Si: Etching Implications
Jo De Boeck
Jiben Liang
Jürgen Christen
Article 01 December 1989 Pages: 311 - 316
Reduction of Thermal Stress in Mbe Grown GaAs/Si by Patterning
J. P. Van Der Ziel
Naresh Chand
J. S. Weiner
Article 01 December 1989 Pages: 317 - 324
Photoelectronic Properties of Low Temperature GaAs Grown on Silicon and GaAs Substrates by Mbe
Raymond P. Mariella
Jeffrey D. Morse
Charles E. Hunt
Article 01 December 1989 Pages: 325 - 329
Atomic Layer Epitaxy of GaAs on Si by Mocvd
N. H. Karam
V. E. Haven
N. A. El-Masry
Article 01 December 1989 Pages: 331 - 336
Comparison of Interface Formation for GaAs-on-Si and ZnSe-on-Si
R. D. Bringans
Marjorie A. Olmsteadt
Article 01 December 1989 Pages: 337 - 342
Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy
B. J. Wu
K. L. Wang
E. Weber
Article 01 December 1989 Pages: 343 - 348
Improvement of Minority-Carrier Properties of GaAs on Si
S. M. Vernon
R. K. Ahrenkiel
N. H. Karam
Article 01 December 1989 Pages: 349 - 355
Initial Nucleation Studies of Heteroepitaxial GaAs films on Si Substrates by Modulated Molecular Beam Epitaxy
Henry P. Lee
Xiaoming Lius
Zuzanna Liliental-Weber
Article 01 December 1989 Pages: 357 - 364
Low Pressure Omcvd Growth of GaAs on InP for Fet and Quantum Well Laser Fabrication
R. Bhat
Y-H. Lo
M. A. Koza
Article 01 December 1989 Pages: 367 - 375

Volume 145, Issue 1

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