Volume 1431, Issue 1

December 2012

Symposium F — Phase-Change Materials for Memory and Reconfigurable Electronics Applications

Issue Editors:

8 articles in this issue

Ab initio determination of the elastic properties of cubic Ge₁b₂Te₄
K. Kohary
A.S.H. Marmier
C.D. Wright
OriginalPaper 01 February 2012 Pages: 1 - 6
Sb-Te Phase-change Nanowires by Templated Electrodeposition
C.A. Ihalawela
R.E. Cook
G. Chen
OriginalPaper 01 February 2012 Pages: 7 - 13
The amorphization and crystallization of Ge₂Sb₂Te₅: an ab initio molecular dynamics study
Paulo S. Branicio
Kewu Bai
David J. Srolovitz
OriginalPaper 01 February 2012 Pages: 14 - 19
Simulation and Design of a Silicon Nanowire based Phase Change Memory Cell
Ramin Banan Sadeghian
Yusuf Leblebici
Ali Shakouri
OriginalPaper 01 February 2012 Pages: 20 - 25
Nanometer Resolution XANES Imaging of Individual PC-RAM Devices
Jan H. Richter
Milos Krbal
Motohiro Suzuki
OriginalPaper 01 February 2012 Pages: 26 - 30
Threshold voltage drift in phase change memories: scaling and modeling
N. Ciocchini
M. Cassinerio
D. Ielmini
OriginalPaper 01 February 2012 Pages: 31 - 36
Role of Enthalpy and Relative Electric Permittivity in Electric Field Induced Nucleation
K. Kohary
J. Vazquez-Diosdado
C.D. Wright
OriginalPaper 01 February 2012 Pages: 37 - 42
Electron Self-trapping in Ge₂ Se₃ and its Role in Ag and Sn Incorporation
Arthur H. Edwards
Kristy A. Campell
Andrew C. Pineda
OriginalPaper 01 February 2012 Pages: 43 - 48

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