Volume 1396, Issue 1

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December 2012

Symposium O — Compound Semiconductors for Generating, Emitting and Manipulating Energy

Issue Editors:

T. Li,
M. Mastro,
A. Dadgar,
H. Jiang,
J. Kim

37 articles in this issue

Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates
Suzuka Nishimura
Muneyuki Hirai
Kazutaka Terashima
OriginalPaper 01 October 2011 Pages: 1 - 5
Influences of hydrogen passivation on NIR photodetection of n-type β-FeSi₂/p-type Si heterojunction photodiodes fabricated by facing-targets direct-current sputtering
Kyohei Yamashita
Nathaporn Promros
Tsuyoshi Yoshitake
OriginalPaper 01 October 2011 Pages: 6 - 11
Photoluminescence Study of Damage Introduced in GaN by Ar- and Kr-Plasmas Etching
Yoshitaka Nakano
Retsuo Kawakami
Kikuo Tominaga
OriginalPaper 01 October 2011 Pages: 12 - 17
Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions of GaN Buffer Layers
Yoshitaka Nakano
Yoshihiro Irokawa
Hiroji Kawai
OriginalPaper 01 October 2011 Pages: 18 - 23
InN on GaN Heterostructure Growth by Migration Enhanced Epitaxial Afterglow (MEAglow)
Peter W. Binsted
Kenneth Scott A. Butcher
Vasil Georgiev
OriginalPaper 01 October 2011 Pages: 24 - 29
The Research and Development for Collecting, Emitting, and Manipulating Energy
Tingkai Li
OriginalPaper 01 October 2011 Pages: 30 - 37
Copper Oxide Edge-Termination for GaN Schottky Barrier Diodes with Low Turn-on Voltage
Yuichi Minoura
Naoya Okamoto
Toshihide Kikkawa
OriginalPaper 01 October 2011 Pages: 38 - 42
Couplings in GaAs/AlGaAs/Metal Photonic Waveguides with Metallic Variations
Meng-Mu Shih
OriginalPaper 01 October 2011 Pages: 43 - 48
Optical characterization of a InGaN/GaN microcavity with epitaxial AlInN/GaN bottom DBR
A. Franke
B. Bastek
A. Krost
OriginalPaper 01 October 2011 Pages: 49 - 54
1.54μm luminescence of β-FeSi₂ grown on Au-coated Si substrates
Kensuke Akiyama
Hiroshi Funakubo
Masaru Itakura
OriginalPaper 01 October 2011 Pages: 55 - 60
Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN
Stefan Schöche
Tino Hofmann
Mathias Schubert
OriginalPaper 01 October 2011 Pages: 61 - 66
Manipulating 3C-SiC Nanowire Morphology through Gas Flow Dynamics
Kasif Teker
Jesse M. Otto
OriginalPaper 01 October 2011 Pages: 67 - 72
The influence of Si doping to BP(100) layer on Si(100) by TEM
Muneyuki Hirai
Suzuka Nishimura
Kazutaka Terashima
OriginalPaper 01 October 2011 Pages: 73 - 78
A Systematic Study of the Thermoelectric Properties of GaN-based Wide Band Gap Semiconductors
Elisa N. Hurwitz
Bahadir Kucukgok
Ian T. Ferguson
OriginalPaper 01 October 2011 Pages: 79 - 84
Integrated Optoelectronic Devices on Silicon
Di Liang
John E. Bowers
OriginalPaper 01 October 2011 Pages: 85 - 96
Mid-Infrared Lead-Salt Surface Emitting Photonic Crystal Laser on Silicon
Binbin Weng
Lin Li
Zhisheng Shi
OriginalPaper 01 October 2011 Pages: 97 - 102
Effects of Silicon Doping and Threading Dislocation Density on Stress Evolution in AlGaN Films
Joan M. Redwing
Ian C. Manning
David W. Snyder
OriginalPaper 01 October 2011 Pages: 103 - 111
Characterization of InGaN and InAlN Epilayers by Microdiffraction X-Ray Reciprocal Space Mapping
V. Kachkanov
I.P. Dolbnya
I.M. Watson
OriginalPaper 01 October 2011 Pages: 112 - 117
Assessment of Transparent Conducting Zinc Oxide as a Tunneling Contact to p-GaN
S. Musunuru
V. Kumbham
L. A. Hornak
OriginalPaper 01 October 2011 Pages: 118 - 123
Enhanced Emission from In_xGa_1-xN-based LED Structures Using III-Nitride based Distributed Bragg Reflector
K. Lee
A. Kadiyala
D. Korakakis
OriginalPaper 01 October 2011 Pages: 124 - 129
GaN-Based Neutron Scintillators with a ⁶LiF Conversion Layer
Andrew G. Melton
Eric Burgett
Ian T. Ferguson
OriginalPaper 01 October 2011 Pages: 130 - 133
The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility Transistors
F. Ren
S. J. Pearton
D. J. Smith
OriginalPaper 01 October 2011 Pages: 134 - 145
AlN/GaN Distributed Bragg Reflectors Grown via Metal Organic Vapor Phase Epitaxy using GaN Insertion Layers
L. E. Rodak
J. Peacock
D. Korakakis
OriginalPaper 01 October 2011 Pages: 146 - 151
Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/GaN Heterostructures
Mohana K. Rajpalke
Thirumaleshwara N. Bhat
S. B. Krupanidhi
OriginalPaper 01 October 2011 Pages: 152 - 157
ZnO/ZnSe Type II Core-Shell Nanowire Array Solar Cell
Y. Zhang
D. Li
H. Mariette
OriginalPaper 01 October 2011 Pages: 158 - 163
Properties of MOCVD-Grown GaN:Gd Films for Spintronic Devices
Andrew G. Melton
ZhiQiang Liu
Ian Ferguson
OriginalPaper 01 October 2011 Pages: 164 - 168
Optimization of the Optical and Electrical Properties of GaN Vertical Light Emitting Diode with Current Block Layer
Na Lu
Zhiqiang Liu
Ian Ferguson
OriginalPaper 01 October 2011 Pages: 169 - 173
Nonlinear Optical Techniques for Characterization of Wide Bandgap Semiconductor Electronic Properties: III-nitrides, SiC, and Diamonds
Kęstutis Jarašiūnas
Ramūnas Aleksiejūnas
Patrik Ščajev
OriginalPaper 01 October 2011 Pages: 174 - 185
Cost performance trade-off in thermoelectric modules with low fractional area coverage
Kazuaki Yazawa
Ali Shakouri
OriginalPaper 01 October 2011 Pages: 186 - 191
Understanding MOCVD Gas Chemistry to Reduce the Cost of Ownership for GaN LED and AsP CPV Technologies
E.A. Armour
B. Mitrovic
A. Paranjpe
OriginalPaper 01 October 2011 Pages: 192 - 203
Cathodoluminescence characterization of Si-doped orientation patterned GaAs crystals
V. Hortelano
O. Martínez
D. Bliss
OriginalPaper 01 October 2011 Pages: 204 - 209
Synthesis and Characterization of Multi-Walled Carbon Nanotubes with Semiconductor Nanoparticles for Optoelectronics
Marcos F. O. Silva
Wagner N. Rodrigues
Douglas R. Miquita
OriginalPaper 01 October 2011 Pages: 210 - 215
Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases
Hamad A. Albrithen
Gale S. Petrich
Abdulrahman A. Almuhanna
OriginalPaper 01 October 2011 Pages: 216 - 221
Amorphous silicon Bragg reflectors fabricated by oblique angle deposition
S. J. Jang
C. I. Yeo
Y. T. Lee
OriginalPaper 01 October 2011 Pages: 222 - 227
Tailoring of CdS Nano Films Through CBD-Isochronal Synthesis For PV Applications
Amanullah Fatehmulla
Abdullah M. Aldhafiri
Mohammed Aslam
OriginalPaper 01 October 2011 Pages: 228 - 233
Nuclear spin polarization by out-of-plane spin injection from ferromagnet into an InAs heterostructure
Tomotsugu Ishikura
Takahiro Hiraki
Kanji Yoh
OriginalPaper 01 October 2011 Pages: 234 - 238
Performance Comparison and Design Issue on Different GaN Power Transistor Structures
Chwan-Ying Lee
Chien-Chung Hung
Ming-Jinn Tsai
OriginalPaper 01 October 2011 Pages: 239 - 244

Volume 1396, Issue 1

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