Volume 1337, Issue 1

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December 2011

Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories

Issue Editors:

D. Wouters,
O. Auciello,
P. Dimitrakis,
Y. Fujisaki,
E. Tokumitsu

23 articles in this issue

Retentivity of RRAM Devices Based on Metal / YBCO Interfaces
A. Schulman
C. Acha
Articles 01 June 2011 Article: 1007
Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor
Paulo F. Rocha
Henrique L. Gomes
Stefan C. J. Meskers
Articles 01 June 2011 Article: 1006
Planar Non-Volatile Memory based on Metal Nanoparticles
A. Kiazadeh
H. L. Gomes
S. C. J. Meskers
Articles 01 June 2011 Article: 1005
A Survey of Metal Oxides and Top Electrodes for Resistive Memory Devices
S. M. Bishop
B. D. Briggs
N. C. Cady
Articles 01 June 2011 Article: 911
Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope.
K. Kinoshita
T. Yoda
S. Kishida
Articles 01 June 2011 Article: 811
WO_x resistive memory elements for scaled Flash memories
S. Gorji Ghalamestani
L. Goux
J. G. Lisoni
Articles 01 June 2011 Article: 810
Memristive Switches with Two Switching Polarities in a Forming Free Device Structure
Rainer Bruchhaus
Christoph R. Hermes
Rainer Waser
Articles 01 June 2011 Article: 803
Understanding the Role of Process Parameters on the Characteristics of Transition Metal Oxide RRAM/Memristor Devices
Branden Long
Yibo Li
Rashmi Jha
Articles 01 June 2011 Article: 802
Influence of Process Parameters on Resistive Switching in MOCVD NiO Films
X. P. Wang
D. J. Wouters
J. Kittl
Articles 01 June 2011 Article: 709
Fabrication and Characterization of Copper Oxide Resistive Memory Devices
S. M. Bishop
B. D. Briggs
N. C. Cady
Articles 01 June 2011 Article: 704
Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory
B. D. Briggs
S. M. Bishop
N. C. Cady
Articles 01 June 2011 Article: 703
Complementary Resistive Switches (CRS): High speed performance for the application in passive nanocrossbar arrays
Roland Rosezin
Eike Linn
Rainer Waser
Articles 01 June 2011 Article: 702
Electro-forming of vacancy-doped metal-SrTiO₃-metal structures
Florian Hanzig
Juliane Seibt
Dirk C. Meyer
Articles 01 June 2011 Article: 612
Enhancement of Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO₂ Nanocomposite by Inserting HfO₂/SiO₂ Blocking Oxide Layer
Kuo-Chang Chiang
Tsung-Eong Hsieh
Articles 01 June 2011 Article: 603
New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices
Mikhail Dronov
Ivan Belogorohov
Dmitry Khokhlov
Articles 01 June 2011 Article: 507
Investigation on Phase Change Behaviors of Si-Sb-Te Alloy: The Effect of Tellurium Segregation
Xilin Zhou
Liangcai Wu
Bomy Chen
Articles 01 June 2011 Article: 407
Interface Characterization of Metals and Metal-nitrides to Phase Change Materials
Deepu Roy
Dirk J. Gravesteijn
Rob A. M. Wolters
Articles 01 June 2011 Article: 402
Lanthanum Oxide Capping Layer for Solution-Processed Ferroelectric-Gate Thin-Film Transistors
Tue T. Phan
Trinh N. Q. Bui
Tatsuya Shimoda
Articles 01 June 2011 Article: 205
Recent Progress in Downsizing FeFETs for Fe-NAND Application
Le Van Hai
Mitsue Takahashi
Shigeki Sakai
Articles 01 June 2011 Article: 202
Temperature Effects on Charge Transfer Mechanisms of nc-ITO Embedded ZrHfO High-k Nonvolatile Memory Devices
Chia-Han Yang
Yue Kuo
Way Kuo
Articles 01 June 2011 Article: 108
Matrix Density Effect on Morphology of Germanium Nanocrystals Embedded in Silicon Dioxide Thin Films
Arif S. Alagoz
Mustafa F. Genisel
Rasit Turan
Articles 01 June 2011 Article: 107
Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatile Memories
J. Amouroux
V. Della Marca
L. Fares
Articles 01 June 2011 Article: 104
Scaling Challenges for NAND and Replacement Memory Technology
Kirk Prall
Articles 01 June 2011 Article: 101

Volume 1337, Issue 1

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