Volume 13, Issue 1

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December 1982

Symposium A — Laser-Solid Interactions and Transient Thermal Processing of Materials

Issue Editors:

J. Narayan,
W.L. Brown,
R.A. Lemons

98 articles in this issue

Picosecond Time-Resolved Detection of Plasma Formation and Phase Transitions in Silicon
J. M. Liu
H. Kurz
N. Bloembergen
OriginalPaper 01 January 1982 Pages: 3 - 12
Femtosecond Time Resolved Reflectivity of Optically Excited Silicon
R. Yen
C. V. Shank
C. Hirlimann
OriginalPaper 01 January 1982 Pages: 13 - 16
Raman Scattering with Nanosecond Resolution during Pulsed Laser Heating of Silicon
D. Von Der Linde
G. Wartmann
A. Ozols
OriginalPaper 01 January 1982 Pages: 17 - 22
Pulsed Raman Measurements of Phonon Populations: Time Reversal, Correction Factors, and All That
A. Compaan
H. W. Lo
M. C. Lee
OriginalPaper 01 January 1982 Pages: 23 - 33
A Detailed Examination of Time-Resolved Pulsed Raman Temeperature Measurements of Laser Annealed Silicon
G. E. Jellison, Jr
D. H. Lowndes
R. F. Wood
OriginalPaper 01 January 1982 Pages: 35 - 40
Instability of the Electron-Hole Plasma and its Possible Relation with Melting
Monique Combescot
Julien Bok
OriginalPaper 01 January 1982 Pages: 41 - 42
Time-Resolved Study of Silicon during Pulsed-Laser Annealing
B. C. Larson
C. W. White
D. M. Mills
OriginalPaper 01 January 1982 Pages: 43 - 50
Measurement of Fast Melting and Regrowth Velocities in Picosecond Laser Heated Silicon
P. H. Bucksbaum
J. Bokor
OriginalPaper 01 January 1982 Pages: 51 - 56
Time Resolved Measurements of Interface Dynamics during Pulsed Laser Melting Observed by Transient Conductance
Michael O. Thompson
G. J. Galvin
OriginalPaper 01 January 1982 Pages: 57 - 67
Transient Conductivity Measurements in Pulsed Ion Beam Melted Silicon
R. M. Fastow
J. Gyulai
J. W. Mayer
OriginalPaper 01 January 1982 Pages: 69 - 74
Ultra-High Speed Solidification and Crystal Growth in Transiently Molten Semiconductor Layers
A. G. Cullis
OriginalPaper 01 January 1982 Pages: 75 - 82
Amorphous Phase Trapping as a Result of Pulsed Laser Irradiation of Silicon
R. F. Wood
OriginalPaper 01 January 1982 Pages: 83 - 88
Ion and Electron Spectroscopy during Pulsed Laser Irradiation of Silicon
J. P. Long
R. T. Williams
M. N. Kabler
OriginalPaper 01 January 1982 Pages: 89 - 95
Nonlinear Laser Melting of Indium Antimonide and Silicon
Michael P. Hasselbeck
H. S. Kwok
OriginalPaper 01 January 1982 Pages: 97 - 104
Thermodiffusion — A New Approach to Plasma Self-Confinement
A. Forchel
B. Laurich
G. Mahler
OriginalPaper 01 January 1982 Pages: 105 - 110
Temperature Characterization of Pulsed Laser Annealing of Semiconductors
D. L. Kwong
D. M. Kim
OriginalPaper 01 January 1982 Pages: 111 - 116
Substrate Latent Heat Effects in the Calculations for Pulsed Laser Irradiated Thin Films
J. J. Cao
K. Rose
J. Norton
OriginalPaper 01 January 1982 Pages: 117 - 122
Laser Induced Temperature Rise in Semiconductors: Analytical Solutions, Application to the Transient
Alain Maruani
Y. I. Nissim
D. Paquet
OriginalPaper 01 January 1982 Pages: 123 - 128
Survey of the Thermodynamics and Kinetics of Crystallization of Si and Ge
D. Turnbull
OriginalPaper 01 January 1982 Pages: 131 - 134
Charged Dangling Bonds and Crystallization in Group IV Semiconductors
P. J. Germain
M. A. Paesler
K. Zellama
OriginalPaper 01 January 1982 Pages: 135 - 140
Laser-Induced Solid Phase Crystallization in Amorphous Silicon Films
G. L. Olson
S. A. Kokorowski
L. D. Hess
OriginalPaper 01 January 1982 Pages: 141 - 154
Solid-Phase-Epitaxial Growth of Ion Implanted Silicon Using CW Laser and Electron Beam Annealing
J. Narayan
O. W. Holland
G. L. Olson
OriginalPaper 01 January 1982 Pages: 155 - 163
Explosive Crystallization in a-Ge and a-Si: A Review
D. Bensahel
G. Auvert
OriginalPaper 01 January 1982 Pages: 165 - 176
Explosive Recrystallization of Ion Implantation Amorphous Silicon Layers
J. Narayan
G. R. Rozgonyi
A. K. Rai
OriginalPaper 01 January 1982 Pages: 177 - 184
Visualization of Temperature Profiles in a-Si Crystallized in the Explosive Mode by CW Laser
Michel Rivier
Andras Cserhati
George Goetz
OriginalPaper 01 January 1982 Pages: 185 - 189
Surface Electromagnetic Waves in Laser Material Interactions
D. J. Ehrlich
S. R. J. Brueck
J. Y. Tsao
OriginalPaper 01 January 1982 Pages: 191 - 196
Laser Induced Periodic Surface Structure
H. M. Van Driel
Jeff F. Young
J. E. Sipe
OriginalPaper 01 January 1982 Pages: 197 - 204
Picosecond Laser-Induced Surface Transformations in Solids
P. M. Fauchet
Zhou Guosheng
A. E. Siegman
OriginalPaper 01 January 1982 Pages: 205 - 210
Aligned, Coexisting Liquid and Solid Regions in Pulsed and CW Laser Annealing of Si
R. J. Nemanich
D. K. Biegelsen
W. G. Hawkins
OriginalPaper 01 January 1982 Pages: 211 - 216
Interferometric Measurements of Surface Properties during Laser Annealing
Mario Bertolotti
Aldo Ferrari
Peter Jani
OriginalPaper 01 January 1982 Pages: 217 - 220
Impurity Diffusion in Silicon Annealed by Semi-Continuous Laser
Jean-Eric Bouree
Claude Leray
Michel Rodot
OriginalPaper 01 January 1982 Pages: 221 - 227
Search for Vacancies in Laser Annealed Silicon
H. J. Stein
P. S. Peercy
OriginalPaper 01 January 1982 Pages: 229 - 234
Microprobe Raman Analysis of Picosecond Laser Annealing of Implanted Silicon
J. Sapriel
Y. I. Nissim
J. L. Oudar
OriginalPaper 01 January 1982 Pages: 235 - 240
Analysis of Temperature and Stress Profiles Induced by a CW Line Scanned Electron Beam in <100> Oriented Silicon
G. G. Bentini
L. Correra
OriginalPaper 01 January 1982 Pages: 241 - 246
Ising Model Simulations of Impurity Trapping in Silicon
George H. Gilmer
OriginalPaper 01 January 1982 Pages: 249 - 261
Amorphous Si, Crystallization and Melting
J. M. Poate
OriginalPaper 01 January 1982 Pages: 263 - 271
Impurity Redistribution in Ion Implanted Si After Picosecond Nd Laser Pulse Irradiation
S. U. Campisano
P. Baeri
A. M. Malvezzi
OriginalPaper 01 January 1982 Pages: 273 - 279
Coherent Precipitate Formation in Pulsed-Laser and Thermally-Annealed, Ion-Implanted Si
B. R. Appleton
J. Narayan
S. J. Pennycook
OriginalPaper 01 January 1982 Pages: 281 - 286
Dopant Incorporation during Rapid Solidification
C. W. White
D. M. Zehner
S. R. Wilson
OriginalPaper 01 January 1982 Pages: 287 - 296
Pulsed Laser Annealing of Ion Implanted Ge
O. W. Holland
J. Narayan
B. R. Appleton
OriginalPaper 01 January 1982 Pages: 297 - 302
Segregation and Crystallization Phenomena in Germanium
G. J. Clark
A. G. Cullis
Michael O. Thompson
OriginalPaper 01 January 1982 Pages: 303 - 310
Impurity Distribution Profiles and Surface Disorder after Laser Induced Diffusion
E. Fogarassy
R. Stuck
J. C. Desoyer
OriginalPaper 01 January 1982 Pages: 311 - 316
Surface Studies of Laser Annealed Semiconductors
D. M. Zehner
C. W. White
OriginalPaper 01 January 1982 Pages: 317 - 328
Laser-Induced Surface Defects
Jean-Marie Moison
Marcel Bensoussan
OriginalPaper 01 January 1982 Pages: 329 - 334
Applications of Laser Annealing in IC Fabrication
L. D. Hess
G. Eckhardt
L. F. Lou
OriginalPaper 01 January 1982 Pages: 337 - 348
Defect Control during Epitaxial Regrowth by Rapid Thermal Annealing
H. Baumgart
G. K. Celler
T. T. Sheng
OriginalPaper 01 January 1982 Pages: 349 - 354
Rapid Thermal Annealing of Silicon using an Ultrahigh Power ARC LAMP
R. T. Hodgson
J. E. E. Baglin
J. C. Gelpey
OriginalPaper 01 January 1982 Pages: 355 - 360
Flame Annealing of Ion Implanted Silicon
J. Narayan
R. T. Young
OriginalPaper 01 January 1982 Pages: 361 - 367
Isothermal Annealing of Ion Implanted Silicon with a Graphite Radiation Source
S. R. Wilson
R. B. Gregory
F. D. McDaniel
OriginalPaper 01 January 1982 Pages: 369 - 374
Gettering of Impurities by Incoherent Light Annealed Porous Silicon
V. E. Borisenko
A. M. Doropeev
OriginalPaper 01 January 1982 Pages: 375 - 379

Volume 13, Issue 1

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